Structural study by X-ray diffraction and transmission electron microscopy of the misfit compound (SbS1−xSex)1.16(Nb1.036S2)2

In the Sb-Nb-S-Se system, a new misfit layer compound (MSL) has been synthesized and its structure was determined by combining single crystal X-ray diffraction (XRD) and transmission electron microscopy (TEM) techniques. It presents a composite crystal structure formed by (SbS_1−xSe_x) slabs stacking alternately with double NbS₂ layers and both can be treated as separate monoclinic subsystems. The (SbS_1−xSe_x) slabs comprise a distorted, two-atom-thick layer with NaCl-type structure formed by an array of {SbX₅} square pyramids joined by edges (X: S, Se); the NbS₂ layers consist of {NbS₆} trigonal prisms linked through edge-sharing to form sheets, just as in the 2H-NbS₂ structure type. Both sublattices have the same lattice parameters a = 5.7672(19) Å, c = 17.618(6) Å and β = 96.18(3)°, with incommensurability occurring along the b direction: b₁ = 3.3442(13) Å for the NbS₂ subsystem and b₂ = 2.8755(13) Å for the (SbS_1−xSe_x) subsystem. The occurrence of diffuse scattering intensity streaked along c^* indicates that the (SbS_1−xSe_x) subsystem is subjected to extended defects along the stacking direction.     

Influences of poling condition and sintering temperature on piezoelectric properties of (Na0.5Bi0.5)1 − xBaxTiO3 ceramics

The structure, ferroelectric characteristics and piezoelectric properties of (Na_0.5Bi_0.5)_1 − xBa_xTiO₃ (x = 0.04, 0.06, 0.10) ceramics prepared by conventional solid state method were investigated. The influences of poling condition and sintering temperature on the piezoelectric properties of the ceramics were examined. The piezoelectric properties of the ceramics highly depend on poling field and temperature, while no remarkable effect of poling time on the piezoelectric properties was found in the range of 5-25 min. Compared with (Na_0.5Bi_0.5)_0.96Ba_0.04TiO₃ and (Na_0.5Bi_0.5)_0.90Ba_0.10TiO₃, the piezoelectric properties of (Na_0.5Bi_0.5)_0.94Ba_0.06TiO₃ are more sensitive to poling temperature due to the relatively low depolarization temperature. Moderate increase of sintering temperature improved the poling process and piezoelectric properties due to the development of microstructural densification and crystal structure. With respect to sintering behavior and piezoelectric properties, a sintering temperature range of 1130-1160 °C was ascertained for (Na_0.5Bi_0.5)_0.90Ba_0.10TiO₃.     

Polymorphism of Bi1−xLnxO1.5 phases (0<x<0.40): Characterization of a new compound Bi4Ln2O9 (x=0.33; Ln=La, Pr, Nd)

The Bi_1−xLn_xO_1.5 solid solutions (Ln=La, Pr, Nd), of the β₂/β₁/ε (Bi-Sr-O) structural type, have been investigated in their Ln-rich domains. For Ln=La, Pr, and Nd, the upper limits are 0.35, 0.35 and 0.33, respectively. The Bi₄Ln₂O₉ ε phase (x=0.33) appears to be the single definite compound. For Bi₄La₂O₉, Bi₄Pr₂O₉ and Bi₄Nd₂O₉, the ε-type cells are respectively: a=9.484(4) Å, b=3.982(2) Å, c=7.030(3) Å, β=104.75(3)°; a=9.470(5) Å, b=3.945(2) Å, c=6.968(4) Å, β=104.73(3)° and a=9.439(3) Å, b=3.944(2) Å, c=6.923(2) Å, β=105.03(3)°. Upon heating, each monoclinic (ε) compound transforms successively into rhombohedral phases (β₂/β₁) and finally into a cubic fluorite-type phase. For La- and Pr-based compounds, all transitions are reversible; for Nd, depending on the thermal treatment, the reversibility of ε→β₂ can be incomplete. These transformations are characterized using X-ray thermodiffractometry, differential thermal analysis, dilatometry and impedance spectroscopy versus temperature. Examination of Bi₄(Ln, Ln′)₂O₉ samples allows to correlate the evolution of the thermal behavior and of the unit cell parameters, to the lanthanide size. A partial plot of the (Bi₂O₃)_1−x-(La₂O₃)_x phase diagram (0≤x≤0.40) is proposed.     

Tantalum influence on physical properties of (K0.5Na0.5)(Nb1−xTax)O3 ceramics

Lead-free (K_0.5Na_0.5)(Nb_1−xTa_x)O₃ ceramics with x = 0.00-0.30 were prepared by the solid-state reaction technique. The effects of Ta on microstructure, crystallographic structure, phase transition and piezoelectric properties have been investigated. It has been shown that the substitution of Ta decreases Curie temperature T_C and orthorhombic-tetragonal phase transition temperature T_O-T, while increasing the rhombohedral-orthorhombic phase transition temperature T_R-O. In addition, piezoelectric activity is enhanced with the increase of Ta content. The ceramics with x = 0.30 have the high value of piezoelectric coefficient d₃₃ = 205 pC/N. Moreover, k_p shows little temperature dependence between −75° C and 75 °C, and d₃₃ exhibits very good thermal stability over the range from −196 °C to 75 °C in the aging test.     

Oxygen vacancy ordering in strontium doped rare earth cobaltate perovskites Ln1−xSrxCoO3−δ (Ln = La, Pr and Nd; x > 0.60)

A family of Sr-doped perovskite compounds Ln_1−xSr_xCoO_3−δ (Ln = La³⁺, Pr³⁺ and Nd³⁺; x > 0.60), were prepared by sol-gel chemistry and reaction at 1100 °C under 1 atm of oxygen. This structural family has been shown to be present only for rare earth ions larger than Sm³⁺ and an upper limit of Sr²⁺ solubility in these phases was found to exist between x = 0.90 and 0.95. X-ray diffraction shows oxygen-deficient, simple cubic (Pm-3m) perovskite crystal structures. The combination of electron and powder neutron diffraction reveals that oxygen vacancy ordering occurs, leading to a tetragonal (P4/mmm) superstructure and a doubling of the basic perovskite unit along the crystallographic c-axis. No additional Ln³⁺/Sr²⁺ cation ordering was observed.     

Crystal structure and ferroelectric properties of Ca(Cu3−xMx)Ti4O12 (M = Fe and Ni) ceramics

M-substituted Ca(Cu_3−xM_x)Ti₄O₁₂ (CCMTO) ceramics, where M = Fe and Ni, were synthesized and the influence of M substitutions for Cu on the crystal structure and ferroelectric properties of CCMTO ceramics were investigated in this study. From the variations in the lattice parameters of CCMTO ceramics, the solubility limit of Ni substitution for Cu in CaCu_3−xNi_xTi₄O₁₂ (CCNTO) ceramics was x = 0.2, whereas that of CaCu_3−xFe_xTi₄O₁₂ (CCFTO) ceramics was x = 0.05. The crystal structural analysis of CCMTO ceramics revealed that the single phase of CCMTO ceramics belongs to the I23 non-centrosymmetric space group of I23; as a result, the P_r and E_c values of CCFTO ceramics at x = 0.05 were 1.8 μC/cm² and 40 kV/cm, respectively. The ferroelectric behavior of CCMTO ceramics by the M substitutions for Cu may be related to the displacement of a Ti⁴⁺ cation in the TiO₆ octahedra and tilting of the Ti–O–Ti angle because of the non-centrosymmetric space group.     

Structural, magnetic and dielectric properties of Bi1−ySryFe(1−y)(1−x)Sc(1−y)xTiyO3 (x = 0-0.2, y = 0.1-0.3) ceramics

In this study, bulk ceramics with general formula Bi_1−ySr_yFe_{(1−y)(1−x)}Sc_(1−y)xTi_yO₃ (x = 0-0.2, y = 0.1-0.3 mol%) were prepared by traditional solid-state reaction method. As a comparison, bulk BiFeO₃ (BF) was also sintered by rapid sintering method. Their structural, magnetic, dielectric properties were investigated. X-ray diffraction analysis indicated that apart from a small amount of secondary phase detected in BF, all other samples crystallized in pure perovskite structure and maintained original R3c space group. The room temperature M-H curves were obtained. While BF had a coercive magnetic field (H_c) of 150 Oe, Bi_1−ySr_yFe_1−yTi_yO₃ solid solutions had a much larger value (for y = 0.1, 0.2, 0.3, H_c were 4537, 5230 and 3578 Oe, respectively). Sc³⁺ substitution decreased the H_c values of these solid solutions remarkably, and resulted in soft magnetic properties, as well as a decrease of the dielectric loss. At 1 MHz, the tan δ of Bi_0.7Sr_0.3Fe_0.7(1−x)Sc_0.7xTi_0.3O₃ with x = 0.05, 0.1, 0.15, 0.2 were 0.1545, 0.1078, 0.1046 and 0.1701, respectively.     

Basic properties of Sr1 − xBaxSi2

Basic properties, such as the phase relationship, crystal structure, and energy gap E_g, have been investigated in Sr-rich Sr_1 − xBa_xSi₂. Sr_1 − xBa_xSi₂ (0 ≤ x ≤ 1.0) has two phases: one with the SrSi₂-type structure and another with the BaSi₂-type structure. The SrSi₂ phase exists at x ranging from 0 to 0.13, and the BaSi₂ phase exists at x ranging from 0.24 to 1.0. The volume increases with x in both the SrSi₂ and BaSi₂ phases. A volume jump of 13.7% appears at the structural phase transition from the SrSi₂ phase to the BaSi₂ phase. E_g increases with x in SrSi₂-phase Sr_1 − xBa_xSi₂ but E_g decreases with x in the BaSi₂-phase Sr_1 − xBa_xSi₂. In Sr-rich BaSi₂-phase Sr_1 − xBa_xSi₂, Ba atoms at a specific crystallographic site, the A1 site, are preferentially substituted by Sr atoms, as well as in Ba-rich BaSi₂-phase Sr_1 − xBa_xSi₂.     

Morphotropic phase boundary in high temperature ferroelectric xBi(Zn1/2Ti1/2)O3 − yPbZrO3 − zPbTiO3 perovskite ternary solid solution

A bismuth and lead oxide based perovskite ternary solid solution xBi(Zn_1/2Ti_1/2)O₃ − yPbZrO₃ − zPbTiO₃ (xBZT − yPZ − zPT) was investigated as an attempt to develop a high T_C ferroelectric material for piezoelectric sensor and actuator applications. A morphotropic phase boundary (MPB) between rhombohedral and tetragonal phases was determined through an XRD study on a pseudobinary line 0.1BZT − 0.9[xPT − (1 − x)PZ] for composition 0.1Bi(Zn_1/2Ti_1/2)O₃ − 0.5PbZrO₃ − 0.4PbTiO₃. Enhanced piezoelectric and ferroelectric activities were observed for MPB composition with dielectric constant ε_r′ ~ 23,000 at Curie temperature (T_C) ≈ 320 °C, remanent polarization (P_r) = 35 μC/cm², piezoelectric coefficient (d₃₃) = 300 pC/N, unipolar strain = 0.15%, and electromechanical coupling coefficient (k_P) = 0.45.     

Thermal, spectroscopic and magnetic properties of the CoxNi1−x(SeO3)·2H2O (x = 0, 0.4, 1) phases: Crystal structure of Co0.4Ni0.6(SeO3)·2H2O

The Co_xNi_1−x(SeO₃)·2H₂O (x = 0, 0.4, 1) family of compounds has been hydrothermally synthesized under autogeneous pressure and characterized by elemental analysis, infrared and UV-vis spectroscopies and thermogravimetric and thermodiffractometric techniques. The crystal structure of Co_0.4Ni_0.6(SeO₃)·2H₂O has been solved from single-crystal X-ray diffraction data. This phase is isostructural with the M(SeO₃)·2H₂O (M = Co and Ni) minerals and crystallizes in the P2₁/n space group, with a = 6.4681(7), b = 8.7816(7), c = 7.5668(7) Å, β = 98.927(9)° and Z = 4. The crystal structure of this series of compounds consists of a three-dimensional framework formed by (SeO₃)²⁻ selenite oxoanions and edge-sharing M₂O₁₀ dimeric octahedra in which the metallic cations are coordinated by the oxygens belonging to both the selenite groups and water molecules. The diffuse reflectance spectra show the essential characteristics of Co(II) and Ni(II) cations in slightly distorted octahedral environments. The calculated values of the Dq and Racah (B and C) parameters are those habitually found for the 3d⁷ and 3d⁸ cations in octahedral coordination. The magnetic measurements indicate the existence of antiferromagnetic interactions in all the compounds. The magnetic exchange pathways involve the metal orbitals from edge-sharing dimeric octahedra and the (SeO₃)²⁻ anions which are linked to the M₂O₁₀ polyhedra in three dimensions.     

Effect of the Mn ion on electrical and magnetic properties of orthorhombic perovskite-type Ca(Mn1−xTix)O3−δ

Orthorhombic perovskite-type Ca(Mn_1−xTi_x)O_3−δ (0 ≤ x ≤ 0.7) was synthesized at 1173 K for 12 h in a flow of oxygen from a precursor gel prepared using citric acid and ethylene glycol. The Mn³⁺ ion was generated by substituting a Ti⁴⁺ ion in CaMnO₃. The average particle size was 100-300 nm and did not depend on x. The lattice constants and the (Mn, Ti)-O distance increased linearly with increasing x. The variation in global instability index (GII) indicated that the instability of the structure increases monotonically with increasing x. Ca(Mn_1−xTi_x)O_3−δ was an n-type semiconductor that had its minimum values of electrical resistivity (ρ) and activation energy (E_a) at x = 0.1. Ca(Mn_1−xTi_x)O_3−δ (x = 0 and 0.1) exhibited a weak ferromagnetic behavior. The variation in μ_eff indicated that the spin state of the Mn³⁺ ion changes from low to high at x = 0.1, then reverts to low in the range of 0.2 ≤ x ≤ 0.7. The variations in ρ and E_a are explained by the number of electrons according to the change in the spin state of the Mn³⁺ ion.     

Dielectric and pyroelectric anisotropy in melt-quenched BaBi2(Nb1 − xVx)2O9 ceramics

The (0 0 l) textured BaBi₂(Nb_1 − xV_x)₂O₉ (where x = 0, 0.03, 0.07, 0.1 and 0.13) ceramics were fabricated via the conventional melt-quenching technique followed by high temperature heat-treatment (800-1000 °C range). The influence of vanadium content and sintering temperature on the texture development and relative density were investigated. The samples corresponding to the composition x = 0.1 sintered at 1000 °C for 10 h exhibited the maximum orientation of about 67%. The Scanning electron microscopic studies revealed the presence of platy grains having the a-b planes perpendicular the pressing axis. The dielectric constant and the pyroelectric co-efficient values in the direction perpendicular to the pressing axis were higher. The anisotropy in the dielectric constant is about 100 (at 100 kHz) at the dielectric maximum temperature and anisotropy in the pyroelectric co-efficient is about 50 μC cm⁻² °C⁻¹ in the vicinity of pyroelectric anomaly for the sample corresponding to the composition x = 0.1 sintered at 1000 °C. Higher values of the dielectric loss and electrical conductivity were observed in the direction perpendicular to the pressing axis which is attributed to the high oxygen ion conduction in the a-b planes.     

Dielectric properties of Ba(Ti1 − xZrx)O3 solid solutions

This paper reports the structural and dielectric properties of Ba(Ti_1 − xZr_x)O₃ (x = 0-0.3) ceramics. Single-phase solid solutions of the samples were determined by X-ray diffraction. Microscopic observation by scanning electron microscope revealed dense, single-phase microstructure with large grains (20-60 μm). The evolution of dielectric behavior from a sharp ferroelectric peak (for x ≤ 0.08) to a round dielectric peak (for 0.15 ≤ x ≤ 0.25) with pinched phase transitions and successively to a ferroelectric relaxor (for x = 0.3) was observed with increasing Zr concentration. Compared with pure BaTiO₃, broaden dielectric peaks with high dielectric constant of 25,000-40,000 and reasonably low loss (tanδ: 0.01-0.06) in the Ba(Ti_1 − xZr_x)O₃ ceramics have been observed, indicating great application potential as a dielectric material.     

Rietveld refinement of the semiconducting system Bi2−xFexTe3 from X-ray powder diffraction

The semiconducting system Bi_2−xFe_xTe₃ (x = 0.0, 0.02, 0.04 and 0.08) was synthesized at 1000 °C for 30 h. The scanning electron microscope (SEM) image reveals the tendency of the Bi_2−xFe_xTe₃ system to form a sheet structure with more pronounced alignment and to enhance the formation of some microstructure tubes. The structure of the system under study was refined on the basis of X-ray powder diffraction data using the Rietveld method. The analysis revealed the complete miscibility of Fe in the Bi₂Te₃ matrix and hence the formation of single phase. The system crystallizes in the space group R-3m [1 6 6]. The lattice parameters and the unit cell size slightly change by the incorporation of Fe. The refinement of instrumental and structural parameters led to reliable values for the R_B, R_F and Chi².     

Role of structural changes in dielectric,ferroelectric properties of Sr2KxNa1−xNb5O15 lead-free ceramics

Lead-free Sr₂K_xNa_1−xNb₅O₁₅ (0.00 ≤ x ≤ 0.20) piezoelectric ceramics were prepared by two-step solid state reaction method. Pure tungsten bronze structure could be obtained in all ceramics and K substitution could accelerate the phase formation at lower temperatures. The lattice constant calculation indicated expansion of the unit cell and reduced distortion of the crystal structure with K substitution due to the bigger ionic size of K⁺ (1.64 Å) compared to that of Na⁺ (1.39 Å). Electrical properties of Sr₂K_xNa_1−xNb₅O₁₅ ceramics greatly depended on the K content. Curie temperature T_c shifted downward, whereas the maximum dielectric constant ?_m and the degree of diffusion phase transition all increased initially and then decreased as K content increased, indicating that proper amount of K substitution with x between 0.05 and 0.10 could enhance the dielectric properties. All the ceramics showed an intermediate relaxor-like behavior between normal and ideal relaxor ferroelectrics according to the modified Curie–Weiss law. With increasing K content, the remnant polarization (P_r) decreased gradually and the coercive field (E_c) decreased initially and then increased. But normal ferroelectric hysteresis loops could be observed in all compositions. Besides, the underlying mechanism for variations of the electrical properties due to K substitution was explained in this work.     

Structural and electrical properties of La2−xBaxMo2O9−x/2 (x = 0-0.18)

La_2−xBa_xMo₂O_9−x/2 (x ≤ 0.18) have been prepared by solid state reaction method. The lattice parameter of La_2−xBa_xMo₂O_9−x/2 (x ≤ 0.18) determined by XRD data refinement shows a linear dependence on the dopant Ba content x. For the specimen with a La/Ba molar ratio of 0.18-0.2, additional reflection of secondary phase exists in the XRD pattern, so the value of solubility limit for Ba in La₂Mo₂O₉ is defined in range of 0.18 < x < 0.2. As the replacement degree of La³⁺ by Ba²⁺ increases, the bulk conductivity of La_2−xBa_xMo₂O_9−x/2 (x ≤ 0.18) decreases initially and then increases, a minimum value at La_1.9Ba_0.1Mo₂O_8.95 exists. Hebb-Wagner studies in argon atmosphere, which use an oxide-ion blocking electrode, show that La_2−xBa_xMo₂O_9−x/2 (x ≤ 0.18) are predominantly oxide-ion conducting in the temperature ranging from 773 to 1173 K. The average thermal expansion coefficient of La_1.84Ba_0.16Mo₂O_8.92 determined by high-temperature XRD was deduced as great as 17.5 × 10⁻⁶ K⁻¹ between 298 and 1173 K.     

Locating the normal to relaxor phase boundary in Ba(Ti1−xHfx)O3 ceramics

In this article, we report our studies on the relaxor behavior of Ba(Ti_1−xHf_x)O₃ ceramics, made with close compositions between 0.20 ≤ x ≤ 0.30, to locate the hafnium concentration boundary for the normal to relaxor crossover. X-ray diffraction followed by Rietveld refinement shows the occurrence of single-phase cubic structure for the synthesized Ba(Ti_1−xHf_x)O₃ ceramics. Temperature and frequency dependence of the real (?′) and imaginary (?″) parts of the dielectric permittivity has been studied in the temperature range of 90-350 K at frequencies of 0.1, 1, 10, and 100 kHz. A diffuse phase transition accompanying frequency dispersion is observed in the permittivity versus temperature plots revealing the occurrence of relaxor ferroelectric behavior. The T_m verses Hf concentration plot shows a discontinuous jump and change in the slope at x = 0.23. Quantitative characterization based on phenomenological models has also been presented. The plausible mechanism of the relaxor behavior has been discussed. Substitution of Hf⁴⁺ for Ti⁴⁺ in BaTiO₃ reduces the long-range polar ordering yielding a diffuse ferroelectric phase transition.     

Novel transparent conducting oxide: Anatase Ti1−xNbxO2

Single-crystalline Ti_1−xNb_xO₂ (x = 0.2) films of 40 nm thickness were deposited on SrTiO₃ (100) substrates by the pulsed laser deposition (PLD) technique. X-ray diffraction measurement confirmed epitaxial growth of anatase (001) film. The resistivity of Ti_1−xNb_xO₂ films with x ≥ 0.03 is 2-3 × 10^− 4 Ω cm at room temperature. The carrier density of Ti_1−xNb_xO₂, which is almost proportional to the Nb concentration, can be controlled in a range of 1 × 10¹⁹ to 2 × 10²¹ cm^− 3. Optical measurements revealed that internal transmittance in the visible and near-infrared region for films with x = 0.03 was more than 97%. These results demonstrate that the presently developed anatase Ti_1−xNb_xO₂ is one of the promising candidates for the practical TCOs.     

Structure analysis on the Ba3Mg(Ta1−xNbx)2O9 ceramics: Coexistence of order and disorder

The Ba₃ZnTa₂O₉ (BZT) and Ba₃MgTa₂O₉ (BMT) ceramics, a family of A₃B²⁺B⁵⁺₂O₉ complex perovskites, are extensively utilized in mobile based technologies due to their intrinsic high unloaded quality factor, high dielectric constant and a low (near-zero) resonant frequency temperature coefficient at microwave frequencies. The preparation conditions as well as size and nature of B cations have a profound effect on the final dielectric properties. In this article, we report the effect of Nb⁵⁺ at the Ta⁵⁺ site on the BMT structure prepared at four synthesis temperatures (1300, 1400, 1500 and 1600 °C). The analysis has been carried out using the Rietveld technique on the X-ray powder diffraction data. Results suggest that both the preparation temperatures and Nb⁵⁺ content have significant effect on the ordering of B cations in the Ba₃Mg(Ta_1−xNb_x)₂O₉ solid solution. A disordered (cubic) structure is preferred by the 1300 °C compounds. The weight percentage of the ordered (trigonal) phase escalates, for a given composition, with increasing calcination temperature. A fully ordered trigonal arrangement exists only for x = 0.0 and 0.2 compounds calcined at 1600 °C, and the rest are biphasic (cubic and trigonal). The increase in the cubic fraction upon Nb⁵⁺ augmentation suggests that the solid solution leans more toward the disordered structural arrangement of B²⁺ and B⁵⁺ cations.     

Preparation, structure and luminescent properties of a new potassium yttrium borate K3Y3(BO3)4

A new yttrium borate compound K₃Y₃(BO₃)₄ has been obtained in the K₂O-Y₂O₃-B₂O₃ ternary system. Its structure, determined from single crystal X-ray diffraction data, shows that it belongs to space group P2₁/c with unit cell dimensions of a = 10.4667(16) Å, b = 17.361(3) Å, c = 13.781(2) Å and β = 110.548(8)°. The structure consists sheets of [Y₈B₈O₂₄]_∞ linked by out of sheet BO₃ groups and Y ions to form a three-dimensional framework. The luminescent properties of Eu³⁺ and Tb³⁺ doped K₃Y₃(BO₃)₄ materials have also been studied.