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1.
The realisation of 0.1 mum gate AlGaN/GaN high electron mobility transistors grown on high-resistivity silicon substrates is reported. A maximum current density of 750 mA/mm and an extrinsic transconductance of 225 mS/mm are achieved. The devices feature a record current gain cutoff frequency as high as f T=90 GHz, the highest value ever reported from a GaN-based device grown on a silicon substrate. The results demonstrate the great potential of GaN-on-silicon technology for low-cost millimetre-wave applications. 相似文献
2.
Javorka P. Alam A. Wolter M. Fox A. Marso M. Heuken M. Luth H. Kordos P. 《Electron Device Letters, IEEE》2002,23(1):4-6
AlGaN/GaN HEMTs on silicon substrates have been fabricated and their static and small-signal RF characteristics investigated. The AlGaN/GaN material structures were grown on (111) p-Si by LP-MOVPE. Devices exhibit a saturation current of 0.91 A/mm, a good pinchoff and a peak extrinsic transconductance of 122 mS/mm. A unity current gain frequency of 12.5 GHz and fmax/fT=0.83 were obtained. The highest saturation current reported so far, static output characteristics of up to 20 V and breakdown voltage at pinchoff higher than 40 V demonstrate that the devices are capable of handling ~16 W/mm static heat dissipation 相似文献
3.
Lattice-matched InP-based InAlAs/InGaAs HEMTs with 120GHz cutoff frequency are reported.These devices demonstrate excellent DC characteristics:the extrinsic transconductance of 600mS/mm,the threshold voltage of -1.2V,and the maximum current density of 500mA/mm. 相似文献
4.
An 0.12 μm gate length direct ion-implanted GaAs MESFET exhibiting excellent DC and microwave characteristics has been developed. By using a shallow implant schedule to form a highly-doped channel and an AsH3 overpressure annealing system to optimize the shallow dopant profile, the GaAs MESFET performance was further improved. Peak transconductance of 500 mS/mm was obtained at Ids =380 mA/mm. A noise figure of 0.9 dB with associated gain of 8.9 dB were achieved at 18 GHz. The current gain cutoff frequency fmax of 160 GHz indicates the suitability of this 0.12 μm T-gate device for millimeter-wave IC applications 相似文献
5.
Wojtowicz M. Lai R. Streit D.C. Ng G.I. Block T.R. Tan K.L. Liu P.H. Freudenthal A.K. Dia R.M. 《Electron Device Letters, IEEE》1994,15(11):477-479
We report here 305 GHz fT, 340 GHz fmax, and 1550 mS/mm extrinsic gm from a 0.10 μm InxGa 1-xAs/In0.62Al0.48As/InP HEMT with x graded from 0.60 to 0.80. This device has the highest fT yet reported for a 0.10 μm gate length and the highest combination of f T and fmax reported for any three-terminal device. This performance is achieved by using a graded-channel design which simultaneously increases the effective indium composition of the channel while optimizing channel thickness 相似文献
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J. W. Johnson A. G. Baca R. D. Briggs R. J. Shul J. R. Wendt C. Monier F. Ren S. J. Pearton A. M. Dabiran A. M. Wowchack C. J. Polley P. P. Chow 《Solid-state electronics》2001,45(12):1979-1985
The DC performance of AlGaN/GaN high electron mobility transistors grown by plasma-assisted molecular beam epitaxy was investigated for gate lengths in the range 0.1–1.2 μm. On 0.25 μm gate length devices we obtained 40 VDS operation with >50 mA peak ID. The peak drain current density was 0.44 A/mm for 100 μm gate width devices with 1.2 μm gate lengths. The extrinsic transconductance (gm) decreased with both gate length and gate width and was 75 mS/mm for all gate widths for 0.25 μm devices. E-beam written gates typically produced a slightly lower Schottky barrier height than optically patterned gates. 相似文献
9.
Seshita T. Ikeda Y. Wakimoto H. Ishida K. Terada T. Matsunaga T. Suzuki T. Kitaura Y. Uchitomi N. 《Solid-State Circuits, IEEE Journal of》1994,29(12):1583-1588
An ultrahigh-speed 8 bit multiplexer (MUX) has been developed for future-generation optical-fiber communication systems having a data rate of 20 Gb/s. This IC was fabricated using a 0.5 μm WNx/W-gate GaAs MESFET process based on optical lithography, ion implantation, and furnace annealing for good reproducibility and high throughput. The WNx/W bilayer gate has a low sheet resistance, improving the circuit high frequency performance. To attain 20 GHz operation, advanced circuit techniques for the source-coupled FET logic (SCFL) were introduced. A cross coupled source-follower (CCSF) was developed mainly for the highest speed buffers to enhance the bandwidth. The first-stage T-type flip-flop was designed with optimization techniques and operated up to 21.1 GHz 相似文献
10.
Kruger O. Schone G. Wernicke T. Lossy R. Liero A. Schnieder F. Wurfl J. Trankle G. 《Electron Device Letters, IEEE》2006,27(6):425-427
Vertical interconnect accesses (VIAs) were fabricated between the source electrode on the front and the ground on the backside of high-power microwave AlGaN/GaN high-electron mobility transistors (HEMTs) on /spl sim/400-/spl mu/m-thick silicon carbide substrates. Through-wafer microholes with an aspect ratio of up to /spl sim/ 8 were drilled using pulsed UV-laser machining and subsequently metallized using electroplating. The successful implementation of the laser-assisted VIA technology into device processing was proven by dc and RF characterization. When biased at 26 V, a saturated output power of 41.6 W with an associated power-added efficiency of 55% at 2 GHz was achieved for a 20-mm AlGaN/GaN HEMT with through-wafer VIAs. 相似文献
11.
Schwindt R.S. Kumar V. Kuliev A. Simin G. Yang J.W. Khan M.A. Muir M.E. Adesida I. 《Microwave and Wireless Components Letters, IEEE》2003,13(3):93-95
Reports on the CW power performance at 20 and 30 GHz of 0.25 /spl mu/m /spl times/ 100 /spl mu/m AlGaN/GaN high electron mobility transistors (HEMTs) grown by MOCVD on semi-insulating SiC substrates. The devices exhibited current density of 1300 mA/mm, peak dc extrinsic transconductance of 275 mS/mm, unity current gain cutoff (f/sub T/) of 65 GHz, and maximum frequency of oscillation (f/sub max/) of 110 GHz. Saturated output power at 20 GHz was 6.4 W/mm with 16% power added efficiency (PAE), and output power at 1-dB compression at 30 GHz was 4.0 W/mm with 20% PAE. This is the highest power reported for 0.25-/spl mu/m gate-length devices at 20 GHz, and the 30 GHz results represent the highest frequency power data published to date on GaN-based devices. 相似文献
12.
DC and microwave measurements on AlSb/InAs HEMTs with a gate length of 0.21 μm are reported. The reverse gate characteristics exhibit relatively low gate leakage current and gate-drain breakdown voltages as high as 5 V. Equivalent circuit modelling yields an fT of 110 GHz after removal of the gate bonding pad capacitance. The bias dependence of fmax is examined indicating a significant reduction in the unilateral gain due to impact ionisation 相似文献
13.
Kuzmik J. Bychikhin S. Neuburger M. Dadgar A. Krost A. Kohn E. Pogany D. 《Electron Devices, IEEE Transactions on》2005,52(8):1698-1705
We studied a temperature increase and a heat transfer into a substrate in a pulsed operation of 0.5 length and 150 /spl mu/m gate width AlGaN/GaN HEMTs grown on silicon. A new transient electrical characterization method is described. In combination with an optical transient interferometric mapping technique and two-dimensional thermal modeling, these methods determine the device thermal resistance to be /spl sim/70 K/W after 400 ns from the start of a pulse. We also localized the high-electron mobility transistor heat source experimentally and we extracted a thermal boundary resistance at the silicon-nitride interface of about /spl sim/7/spl times/10/sup -8/ m/sup 2/K/W. Thermal coupling at this interface may substantially influence the device thermal resistance. 相似文献
14.
Wu Y.-F. Keller B.P. Keller S. Nguyen N.X. Le M. Nguyen C. Jenkins T.J. Kehias L.T. Denbaars S.P. Mishra U.K. 《Electron Device Letters, IEEE》1997,18(9):438-440
A thin barrier-donor layer of 200 Å was used to increase the active input capacitance and improve the extrinsic current-gain cutoff frequency (ft) of short-gate-length AlGaN/GaN MODFETs. 0.2-μm gate-length devices fabricated on such an epi-structure with sheet carrier density of ~8×1012 cm-2 and mobility of 1200 cm2/Vs showed a record ft of 50 GHz for GaN based FETs. High channel saturation current and transconductance of 800 mA/mm and 240 mS/mm respectively were also achieved along with breakdown voltages of 80 V per μm gate-drain spacing. These excellent characteristics translated into a CW output power density of 1.7 W/mm at 10 GHz, exceeding previous record for a solid-state HEMT 相似文献
15.
Xu D. Suemitsu T. Osaka J. Umeda Y. Yamane Y. Ishii Y. Ishii T. Tamamura T. 《Electron Device Letters, IEEE》1999,20(5):206-208
We have developed high-performance enhancement-mode InP-based modulation-doped field-effect transistors with 0.03 μm gate-length. A record high current gain cutoff frequency exceeding 300 GHz has been achieved, and the maximum extrinsic transconductance is as high as 2 S/mm with an associated drain current of 0.5 A/mm at a drain bias of 1 V. This high performance is a result of the reduction or gate length, the use of the high barrier metal Pt as gate electrodes, and most importantly the employment of the well-developed wet-etching technology that allows the formation of a very deep gate groove while retaining small side etching. The excellent E-MODFET performance opens up the possibility of implementing ever faster high-speed circuits based on direct-coupled FET logic 相似文献
16.
Vellas N. Gaquiere C. Minko A. Hoel V. De Jaeger J.C. Cordier Y. Semond F. 《Microwave and Wireless Components Letters, IEEE》2003,13(3):99-101
The high potential at microwave frequencies of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon [111] substrate for power applications has been demonstrated in this letter. For the first time, an output power density close to 1.8 W/mm and an associated power added efficiency of 32% have been measured on a 2 /spl times/ 50 /spl times/ 0.5 /spl mu/m/sup 2/ HEMT with a linear power gain of 16 dB. These results constitute the state of the art. 相似文献
17.
本文利用三维热仿真方法研究了不同版图设计对多指AlGaN/GaN 高电子迁移率器件工作温度的影响。我们使用拉曼微区测温技术测量了样品的沟道温度,并用于确定材料的热导率,验证器件热模型的准确性。建立模型时特别考虑了界面热阻的作用,确保器件温度分布的仿真结果与实验测量结果一致。文中采用包含界面热阻效应的三维热模型,系统的分析了栅指数目,器件栅宽和栅栅间距等因素对AlGaN/GaN 高电子迁移率晶体管热特性的影响。最后,提出了一种优化器件栅指间距的热设计方法,能够有效降低器件工作时的最高温度。 相似文献
18.
AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz 总被引:1,自引:0,他引:1
Kumar V. Lu W. Schwindt R. Kuliev A. Simin G. Yang J. Asif Khan M. Adesida I. 《Electron Device Letters, IEEE》2002,23(8):455-457
AlGaN/GaN high electron mobility transistors (HEMTs) grown on semi-insulating SiC substrates with a 0.12 /spl mu/m gate length have been fabricated. These 0.12-/spl mu/m gate-length devices exhibited maximum drain current density as high as 1.23 A/mm and peak extrinsic transconductance of 314 mS/mm. The threshold voltage was -5.2 V. A unity current gain cutoff frequency (f/sub T/) of 121 GHz and maximum frequency of oscillation (f/sub max/) of 162 GHz were measured on these devices. These f/sub T/ and f/sub max/ values are the highest ever reported values for GaN-based HEMTs. 相似文献
19.
R. Quay Dipl.-Phys. Dr. techn. G. Weimann Prof. Dr. rer. nat. 《e & i Elektrotechnik und Informationstechnik》2003,120(3):75-78
An overview of properties and recent achievements for AlGaN/GaN high electron mobility transistors (HEMT) on semi-insulating SiC substrate is given towards high power and broadband applications up to a frequency of 40 GHz. Starting from epitaxial growth and process technology we present state-of-the-art power results obtained at the Fraunhofer Institute (IAF) from AlGaN/GaN HEMTs on SiC. Further, a one-stage 16 GHz MMIC power amplifier circuit with 1.6 W output power is presented. This result represents the first AlGaN/GaN MMIC on SiC fabricated in Europe. 相似文献
20.
Sanabria C. Chakraborty A. Hongtao Xu Rodwell M.J. Mishra U.K. York R.A. 《Electron Device Letters, IEEE》2006,27(1):19-21
The effect of gate leakage on the noise figure of AlGaN/GaN high electron mobility transistor (HEMTs) is explored. It is shown that these devices have a sizable amount of gate leakage that cannot be ignored when measuring their noise performance. Measurements across a single sample have more than 1 dB of variation in minimum noise figure. We will show this variation is because of gate leakage. A modified van der Ziel model is used to predict this large variation and allows easy noise figure prediction of HEMT and MESFET devices. 相似文献