共振隧穿二极管型光探测器和光调制器

将共振隧穿二极管(RTD)的核心结构——双势垒系统与光探测器和调制器的原理相结合可构成共振隧穿光探测器和共振隧穿光调制器。这些器件既保持了RTD高频、高速的特点,同时又具备了光探测器和光调制器原有的功能,可用于光电集成电路。介绍了这种具有代表性的RTD型光电器件的工作原理、器件结构、制造工艺、器件参数测试等,为此类器件在国内的设计和研制奠定基础。     

共振隧穿二极管中的电荷积累效应——共振隧穿器件讲座(4)

介绍了共振隧穿二极管(RTD)中电荷积累效应,利用顺序隧穿模型分析了RTD中有电荷积累时器件各部分电压的再分布;并结合电压降局限于双势垒区和遍及整个RTD的两种情况,建立了电荷和电流方程;最后利用电荷积累效应解释了负阻区本征双稳态特性。     

共振隧穿器件概述——共振隧穿器件讲座(1)

通过对共振隧穿器件的特点、分类、工作原理、电流成分、器件参数等的介绍,为初学人员或非专业爱好人员提供一个对共振隧穿器件全面的、概括性的认识。     

共振隧穿三极管(RTT)———共振隧穿器件讲座(10)

在简述共振隧穿三极管(RTT)的特点、定义、分类的基础上,全面、系统地介绍了各种结构RTT的材料结构、器件结构、工作原理、制造工艺及器件性能参数等,对某些RTT还给出了其应用前景。由于RTT的器件结构种类繁多,其工作原理也存在差异。为了便于介绍,在栅型RTT中以Schottky栅RTT为重点,在复合型RTT中以发射极中含DBS的RTBT和RTD/HEMT型RTT为重点进行了较为详细的阐述。总之,栅型RTT结构比较简单,但增益和驱动能力较小;复合型RTT结构较复杂,但增益和驱动能力较大,而且易于和HBT或HEMT电路兼容。     

GeSi/Si共振隧穿二极管

GeSi/Si共振隧穿二极管主要包括空穴型GeSi/SiRTD、应力型GeSi/SiRTD和GeSi/Si带间共振隧穿二极管三种结构。着重讨论了后两种GeSi/Si基RTD结构;指出GeSi/Si异质结的能带偏差主要发生在二者价带之间(即ΔEv>ΔEc),形成的电子势阱很浅,因此适用于空穴型RTD的研制;n型带内RTD只有通过应力Si或应力GeSi来实现,这种应力型RTD为带内RTD的主要结构;而带间GeSi/SiRITD则将成为更有应用前景的、性能较好的GeSi/SiRTD器件结构。     

基于共振隧穿二极管的蔡氏电路设计研究

首次提出一种基于共振隧穿二极管的蔡氏电路.利用共振隧穿二极管(RTD)的负微分电阻特性,采用驱动点特性合成的方法,实现了蔡氏电路中的分段线性电阻,通过一组参数的选取,进而实现了蔡氏电路,并用PSpice模拟软件进行了仿真验证.相对于用传统方法实现的蔡氏电路,基于RTD的蔡氏电路具有电路结构更加简洁、便于集成的特点.     

GaAs基共振隧穿二极管的研究

对GaAs基共振隧穿二极管(RTD)进行了研究,首先用分子束外延(MBE)方法进行AlAs/GaAs/InGaAs双势垒单势阱材料结构的生长.接着用常温光致荧光(PL)方法对结构材料进行了测试分析,其结果显示,较好的外延结构材料的PL谱线半峰宽达到62.6 nm.最后通过制成RTD器件对材料进行验证,器件测试结果表现出良好的直流特性.     

共振隧穿二极管(RTD)的物理模型——共振隧穿器件讲座(3)

介绍了共振隧穿二极管物理模型的量子力学基础,重点讲解共振隧穿两种物理模型,从不同维度隧穿的特点分析共振隧穿和非共振隧穿的区别,为以后讨论分析共振隧穿器件的特性奠定基础。     

共振隧穿器件及其集成技术发展趋势和最新进展

介绍了共振隧穿器件及其特点,论述了该类器件及其集成技术的发展趋势和最新进展,特别是SiO 2S/iS/iO 2共振隧穿二极管及其集成电路的研制成功是一个突破性的进展。     

多峰I—V特性的共振隧穿量子器件

讨论了电子对双势垒共振隧穿的现象和特性,较为详细地论述了近年来发展起来的具有多峰I—V特性的共振隧穿量子器件的原理、结构和电路应用,最后展望了这类器件的发展前景。     

Parallel Adder Design with Reduced Circuit Complexity Using Resonant Tunneling Transistors and Threshold Logic

Quantum-effect devices utilizing resonant tunneling are promising candidates for future nano-scale integration. Originating from the technological progress of semiconductor technology, circuit architectures with reduced complexity are investigated by exploiting the negative-differential resistance of resonant tunneling devices. In this paper a resonant tunneling device threshold logic family based on the Monostable-Bistable Transition Logic Element (MOBILE) is proposed and applied to different parallel adder designs, such as ripple carry and binary carry lookahead adders. The basic device is a resonant tunneling transistor (RTT) composed of a resonant tunneling diode monolithically integrated on the drain contact layer of a heterostructure field effect transistor. On the circuit level the key components are a programmable NAND/NOR logic gate, threshold logic gates, and parallel counters. The special properties of MOBILE logic gates are considered by a bit-level pipelined circuit style. Experimental results are presented for the NAND/NOR logic gate.     

A vertical resonant tunneling transistor for application in digitallogic circuits

A vertical resonant tunneling transistor (VRTT) has been developed, its properties and its application in digital logic circuits based on the monostable-bistable transition logic element (MOBILE) principle are described. The device consists of a small mesa resonant tunneling diode (RTD) in the GaAs/AlAs material system surrounded by a Schottky gate. We obtain low peak voltages using InGaAs in the quantum well and the devices show an excellent peak current control by means of an applied gate voltage. A self latching inverter circuit has been fabricated using two VRTTs and the switching functionality was demonstrated at low frequencies     

InP基谐振隧穿二极管的研究

谐振隧穿二极管(RTD)具有高频、低功耗、负阻、双稳态、自锁等优点,在超高速数字电路领域具有非常好的应用前景.加之InP材料固有的优越特性,使得InP基谐振隧穿器件成为目前研究的重点.研究并试制了InP基RTD实验样品,对其直流特性进行了测试分析,器件的最大电流峰谷比(PVCR)达到了17.8.     

一种基于RTD和HEMT的单片集成逻辑电路

介绍了一种基于共振隧穿二极管(RTD)和高电子迁移率晶体管(HEMT)的单片集成电路.采用分子束外延技术在GaAs底层上重叠生长了RTD和HEMT结构.RTD室温下的峰谷电流比为5.2∶1,峰值电流密度为22.5kA/cm2.HEMT采用1μm栅长,阈值电压为-1V.设计电路称为单稳态-双稳态转换逻辑单元(MOBILE).实验结果显示了该电路逻辑运行成功,运行频率可达2GHz以上.     

基于1-of-2共振隧穿数据选择器的可置位复位D触发器设计

文章以共振隧穿RT器件为主要器件,设计了上边沿触发的共振隧穿D触发器.该触发器以1-of-2共振隧穿数据选择器为核心电路,带预先置位和复位功能.此共振隧穿数据选择器电路的设计方法还能用于实现其他触发器电路,为采用基于RT器件设计触发器电路提供了一种新的并且有效简单的方法,弥补了共振隧穿电路中只能用MOBILE单元来设计时序电路的单一性,丰富了量子电路中触发器的类型.     

共振隧穿电路中翻转-传输代数系统的建立

在传统数字电路天关一信号理论的基础上.提出了一个全新的基于共振隧穿RT(Resonant Tunneling)电路的翻转-传输理论,建立了适用于共振隧穿电路的翻转-传输代数系统,确定了两种联结运算,并用共振隧穿器件实现了该两种联结运算的基本电路结构.为设计共振隧穿电路特别是基本逻辑电路提供了一个全新的理论基础和系统的设计方法.     

Digital circuit applications of resonant tunneling devices

Many semiconductor quantum devices utilize a novel tunneling transport mechanism that allows picosecond device switching speeds. The negative differential resistance characteristic of these devices, achieved due to resonant tunneling, is also ideally suited for the design of highly compact, self-latching logic circuits. As a result, quantum device technology is a promising emerging alternative for high-performance very-large-scale-integration design. The bistable nature of the basic logic gates implemented using resonant tunneling devices has been utilized in the development of a gate-level pipelining technique, called nanopipelining, that significantly improves the throughput and speed of pipelined systems. The advent of multiple-peak resonant tunneling diodes provides a viable means for efficient design of multiple-valued circuits with decreased interconnect complexity and reduced device count as compared to multiple-valued circuits in conventional technologies. This paper details various circuit design accomplishments in the area of binary and multiple-valued logic using resonant tunneling diodes (RTD's) in conjunction with high-performance III-V devices such as heterojunction bipolar transistors (HBT's) and modulation doped field-effect transistors (MODFET's). New bistable logic families using RTD+HBT and RTD+MODFET gates are described that provide a single-gate, self-latching majority function in addition to basic NAND, NOR, and inverter gates     

Monolithic integration of resonant tunneling diodes and FET's formonostable-bistable transition logic elements (MOBILE's)

A MOBILE (monostable-bistable transition logic element), employing two n-type negative differential resistance devices connected in series, is a functional logic gate with the advantages of multiple inputs and multiple functions. In this paper, a novel approach to achieve MOBILE operation is demonstrated using monolithic integration of resonant tunneling diodes (RTD) and FETs. In our new integration structure, an RTD and FET are connected in parallel. This structure offers several advantages including separate optimization of RTD's and FET's, and flexible circuit design abilities. For a single-input MOBILE gate, inverter operation at room temperature is demonstrated as the evidence of monostable-to-bistable transition