High-Temperature Phase Relations in the System Y2O3-Ta2O5

The phase relations for the system y₂o₃–Ta₂o₅ in the composition range 50 to 100 mol% Y₂O₃ have been studied by solid-state reactions at 1350°, 1500°, or 17000C and by thermal analyses up to the melting temperatures. Weberite-type orthorhombic phases (W2 phase, space group C222₁), fluorite-type cubic phases (F phase, space group Fm3m )and another orthorhombic phase (O phase, space group Cmmm )are found in the system. The W2 phase forms in 75 mol% Y₂O₃ under 17000C and O phase in 70 mol% Y₂O₃ up to 1700°C These phases seem to melt incongruently. The F phase forms in about 80 mol% Y₂O₃ and melts congruently at 2454° 3°C. Two eutectic points seem to exist at about 2220°C 90 mol% Y²O₃, and at about 1990°C, 62 mol% Y₂O₃. A Phase diagram including the above three phases were not identified with each other.     

High-Temperature Phase Relations in the Sc2O3-Ta2O5 System

The phase relations for the Sc₂O₃-Ta₂O₅ system in the composition range of 50-100 mol% Sc₂O₃ have been studied by using solid-state reactions at 1350°, 1500°, or 1700°C and by using thermal analyses up to the melting temperatures. The Sc_5.5Ta_1.5O₁₂ phase, defect-fluorite-type cubic phase (F-phase, space group Fm 3 m ), ScTaO₄, and Sc₂O₃ were found in the system. The Sc_5.5Ta_1.5O₁₂ phase formed in 78 mol% Sc₂O₃ at <1700°C and seemed to melt incongruently. The F-phase formed in ∼75 mol% Sc₂O₃ and decomposed to Sc_5.5Ta_1.5O₁₂ and ScTaO₄ at <1700°C. The F-phase melted congruently at 2344°± 2°C in 80 mol% Sc₂O₃. The eutectic point seemed to exist at ∼2300°C in 90 mol% Sc₂O₃. A phase diagram that includes the four above-described phases has been proposed, instead of the previous diagram in which those phases were not identified.     

Effects of Sm2O3 and Gd2O3+ Nd2O3 on Electromechanical Properties of PbTiO3 Ceramics

The electromechanical properties of PbTiO₃ ceramics, modified by substitution of Sm or Gd + Nd (same average atomic radius as Sm) for Pb, were studied in the range of 6% to 14% substitution. The modified PbTiO₃ ceramics were stable, and the Curie temperature decreased linearly over this composition range. The 10% Sm composition had a large anisotropy in the coupling factor ratio, k _t / k _p , and a similar, but weaker, effect developed for 12% (1/2 Gd + 1/2 Nd). This indicates that other than average ion size may influence the electromechanical coupling factor ratio.     

The System Bi2O3-SiO2

The Bi₂O₃-rich side of the system Bi₂O₃-SiO₂ was studied with powder X-ray diffraction and differential thermal analysis. In the composition 6Bi₂O₃. x SiO₂, the metastable γ phase (bcc) was observed to exist over the range of 0 < x ≤ 1. In most of the compositions studied, metastable phases of water-quenched melts transformed into another metastable phase before reaching stable phases. A modification of the phase diagram is proposed.     

Phase Relations and Dielectric Properties in the Bi2O3–ZnO–Ta2O5 System

Dielectric properties and phase formation of Bi-based pyrochlore ceramics were evaluated for the Bi₂O₃–ZnO–Ta₂O₅ system. The compositional range r Bi₂(Zn_1/3Ta_2/3)₂O₇· (1− r )(Bi_3/2Zn_1/2)(Zn_1/2Ta_3/2)O₇ (0 ≤ r ≤ 1) in Bi₂O₃–ZnO–Ta₂O₅ was investigated to determine the relative solubility of BZT cubic (α-BZT, r = 0) and the pseudo-orthorhombic (β-BZT, r = 1) end members. It was found that extrinsic factors, such as kinetically limited phase formation and bismuth loss, contribute to apparent phase boundaries in addition to thermodynamic stability of each phase. Considering this, the locations of true phase boundaries were r < 0.30 and r ≥ 0.74 for α and β phases, respectively. Dielectric constants between 58 and 80 and low dielectric loss (tan δ < 0.003) were measured for the complete compositional range. The temperature coefficient of capacitance was controlled by composition, which was found to be <30 ppm/°C at the edge of β-phase solid solution. In addition to the excellent dielectric properties these materials can be sintered at low temperatures, which make Bi-based pyrochlores promising candidates for high-frequency electronic applications.     

Phase Relations in the System Al2O3–B2O3–Nd2O3

The phase relations at a temperature below "subsolidus" in the system Al₂O₃–B₂O₃–Nd₂O₃ are reported. Specimens were prepared from various compositions of Al₂O₃, B₂O₃, and Nd₂O₃ of purity 99.5%, 99.99%, and 99.9%, respectively, and fired at 1100°C. There are six binary compounds and one ternary compound in this system. The ternary compound, NdAl₃(BO₃)₄ (NAB), has a phase transition at 950°C ± 15°C. The high-temperature form of NAB has a second harmonic generation (SHG) efficiency of KH₂PO₄ (KDP) of the order of magnitude of the form which has been used as a good self-activated laser material, and the low-temperature form of NAB has no SHG efficiency.     

Phase Equilibrium Studies in the System Iron Oxide-Y2O3–Gd2O3

Equilibrium data at liquidus temperatures are presented for compositions in the quaternary system Y-Gd-Fe-O in ambient atmospheres of oxygen gas (p_O2, = 760 mm Hg), air (P_O2, = 159 mm Hg), and CO₂ (p_O2 variable). Incongruent melting occurred in yttrium-iron and gadolinium-iron garnet phases and in all intermediate garnet solid solutions in the three oxygen pressure sections studied. Fractionation in the yttrium/gadolinium ratio between oxide liquid and crystalline garnet phases in the quaternary system was not observed experimentally, indicating that unzoned (Y,Gd)₃Fe₅O₁₂ crystals may be grown from a melt without special precautions to maintain a fixed Y/Gd ratio.     

High-Temperature Neutron Diffraction of the AlN–Al2O3–Y2O3 System

The importance of aluminum nitride (AlN) stems from its application in microelectronics as a substrate material due to high thermal conductivity, high electrical resistance, mechanical strength and hardness, thermal durability, and chemical stability. Yttria (Y₂O₃) is the best additive for AlN sintering. AlN densifies by a liquid-phase mechanism, where the surface oxide, Al₂O₃, reacts with Y₂O₃ to form an Y-Al-O-N liquid that promotes particle rearrangement and densification. Construction of the phase relations in this multicomponent system is essential for optimizing the properties of AlN. The ternary phase diagram of the AlN–Al₂O₃–Y₂O₃ was developed by Gibbs energy minimization using interpolation procedures based on modeling the binary subsystems. This paper aims at testing the resultant understanding experimentally at selected compositions using in situ high-temperature neutron diffractometry. These experimental results agree with the thermodynamic calculations of AlN–Al₂O₃–Y₂O₃. The ternary phase diagram has been constructed for the first time in this work. High-temperature neutron diffractometry has permitted real time measurement of the reactions involved in this ternary system, especially to determine the temperature range for each reaction, which would have been difficult to establish by other means.     

Formation of Metastable Fluorite Phase by Rapid Quenching of Melts in the Y2O3-Ta2O5 System

Melts of x mol% Ta₂O₅–Y₂O₃ (x = 0–32.5) were rapidly quenched to investigate the formation of metastable fluorite solid solutions. C-type Y₂O₃, fluorite, and fergusonite phases existed in the compositional regions of 0 x 16, 8 x 32.5, and 27.5 x 32.5, respectively. Their lattice parameters were precisely measured through either Rietveld analysis or a least-squares fit of the individual X-ray diffraction peak positions. The lattice parameter of the fluorite phase decreased linearly with increasing Ta₂O₅ content, strongly suggesting the formation of compositionally homogeneous metastable solid solutions. Ta₂O₅ was almost insoluble into Y₂O₃ at 1700°C in the equilibrium state.     

Phase Relations in the System CaO-Ta2O5-SiO2

The system CaO-Ta₂O₃-SiO₂ was studied using a combination of hot-stage microscopy and the quenching technique. Primary crystallization fields were defined for the various calcium silicates, and for the calcium tantalates: CaO·2Ta₂O₅, CaO·Ta₂O₅, 2CaO·Ta₂O₅, and 4CaO·Ta₂O₅. A congruently melting ternary compound 10CaO·Ta₂O₅·6SiO₂, isostructural with the mineral niocalite, is the only ternary phase in the system. A large twoliquid region extends across the system from the CaO-SiO₂ binary to within 1 wt% of the Ta₂O₃-SiO₂ binary but does not cut it, in marked contrast to the analogous CaO-Nb₂O₅-SiO₂ system. Other somewhat unexpected differences were noted between these systems.     

Preparation of Gadolinium Gallium Garnet [Gd3Ga5O12] by Solid-State Reaction of the Oxides

We have prepared dense polycrystalline gadolinium gallium garnet (GGG) by solid-state reaction of the oxides. The oxides were prereacted at 1350°C, ground, pressed, and sintered at 1650°C, yielding 97% dense samples. Ga₂O₃ evaporated from the sample surface leaving Gd₄Ga₂O₉ that could spall off the sample. For the short times needed to sinter samples, the bulk composition of the material remained essentially constant. The microhardness of the GGG was 11.8 ± 1.2 GN · m⁻².     

Phase Relations in the System Bi2O3-WO3

Phase relations in the system Bi₂O₃-WO₃ were studied from 500° to 1100°C. Four intermediate phases, 7Bi₂O₃· WO₃, 7Bi₂O₃· 2WO₃, Bi₂O₃· WO₃, and Bi₂O₃· 2WO₃, were found. The 7B₂O · WO₃ phase is tetragonal with a ₀= 5.52 Å and c ₀= 17.39 Å and transforms to the fcc structure at 784°C; 7Bi₂O₃· 2WO₃ has the fcc structure and forms an extensive range of solid solutions in the system. Both Bi₂O₃· WO₃ and Bi₂O₃· 2WO₃ are orthorhombic with (in Å) a ₀= 5.45, b ₀=5.46, c ₀= 16.42 and a ₀= 5.42, b ₀= 5.41, c ₀= 23.7, respectively. Two eutectic points and one peritectic exist in the system at, respectively, 905°± 3°C and 64 mol% WO₃, 907°± 3°C and 70 mol% WO₃, and 965°± 5°C and 10 mol% WO₃.     

Measurement of Oxygen Diffusion in Dy2O3 and Gd2O3 by Studying High-Temperature Oxidation of the Metals

Studies of the oxidation of Gd and Dy at P _O2's from 10^−0.3 to 10^−14.5 atm and temperatures from 727° to 1327°C indicate both semiconducting and ionic-conducting domains in the sesquioxides formed. At higher temperatures, where dense coarsegrained oxide layers developed, the rate of oxidation in the high- P ₀₂ semiconducting domain yielded oxygen diffusion coefficients in Dy₂O₃ in excellent agreement with literature values derived from oxidation of partially reduced oxide single crystals. Under the same conditions, the oxidation of Gd yielded oxygen diffusion coefficients in cubic Gd₂O₃ which are considerably below literature values for monoclinic single-crystal Gd₂O₃. At lower temperatures, porous scales were formed, and apparent diffusion coefficients derived from oxidation rates show a smaller temperature dependence than the high-temperature data. At low P _O2, the oxides behave as ionic conductors, and metal oxidation rates result in estimates of the electronic contribution to the electrical conductivity of the order of 10⁻⁶ to 10⁻⁷Ω⁻¹ cm⁻¹.     

Simultaneous Thermogravimetry and Evolved-Gas Analysis of YBa2Cu3O7 and LaBa2Cu3O7 Superconductors

Concurrent thermogravimetry (TG) and evolved-gas analysis (EGA) were done for YBa₂Cu₃O_7-z and LaBa₂Cu₃-O_7-z superconductors. The sample weights were monitored by thermobalance and the evolved O₂ and CO₂ species were monitored by quadruple mass spectrometer (QMS). No diffraction peak for the impurity phase containing a carbonate group was observed in the X-ray diffraction patterns for these samples, but the release of CO₂ was detected by EGA. CO₂ gas began to evolve from YBa₂Cu₃O_7-z at 543°C and from LaBa₂Cu₃O_7-z at 692°C. Preparation of high-quality YBa₂Cu₃O_7-z and LaBa₂Cu₃O_7-z superconductors is discussed on the basis of results of these thermal analyses.     

Subsolidus Phase Relations in the Ga2O3-In2O3-SnO2 System

Subsolidus phase relationships in the Ga₂O₃–In₂O₃–SnO₂ system were studied by X-ray diffraction over the temperature range 1250–1400°C. At 1250°C, several phases are stable in the ternary system, including Ga₂O₃( ss ), In₂O₃( ss ), SnO₂, Ga_{3− x} In_{5+ x} Sn₂O₁₆, and several intergrowth phases that can be expressed as Ga_{4−4 x} In_{4 x} Sn _{n −4}O_{2 n −2} where n is an integer. An In₂O₃–SnO₂ phase and Ga₄SnO₈ form at 1375°C but are not stable at 1250°C. GaInO₃ did not form over the temperature range 1000–1400°C.