Fabrication of highly dense Si3N4 via record low-content additive system for low-temperature pressureless sintering

Dense Si₃N₄ ceramics were fabricated by pressureless sintering at a low temperature of 1650°C with a short holding period of 1 h under a nitrogen atmosphere. The role of ternary oxide additives (Y₂O₃–MgO–Al₂O₃, Y₂O₃–MgO–SiO₂, Y₂O₃–MgO–ZrO₂) on the phase, microstructure, and mechanical properties of Si₃N₄ was examined. Only 5 wt.% of Y₂O₃–MgO–Al₂O₃ additive was sufficient to achieve >98% of theoretical density with remarkably high biaxial strength (∼1200 MPa) and prominent hardness (∼15.5 GPa). Among the three additives used, Y₂O₃–MgO–Al₂O₃ displayed the finest grain diameter (0.54 μm), whereas Y₂O₃–MgO–ZrO₂ produced the largest average grain diameter (∼0.95 μm); the influence was seen on their mechanical properties. The low additive content Si₃N₄ system is expected to have superior high-temperature properties compared to the system with high additive content. This study shows a cost-effective fabrication of highly dense Si₃N₄ with excellent mechanical properties.     

In-situ reaction synthesis of porous Si2N2O-Si3N4 multiphase ceramics with low dielectric constant via silica poly-hollow microspheres

In the present work, a novel and facile process has been proposed to fabricate porous Si₂N₂O-Si₃N₄ multiphase ceramics with low dielectric constant (ε_r＜4.0). Since silica poly-hollow microspheres could serve as the source of SiO₂ and the pore-forming agent, they have been introduced into Si₃N₄ slurry through the gelcasting technique. This process is benefited from the liquid phase sintering reaction between SiO₂ and Si₃N₄ with the aid of sintering additives, leading to in-situ synthesis of Si₂N₂O phase and porous structure. The content of silica poly-hollow microspheres has great influence on the properties of the final products. It indicates that Si₂N₂O phase would become the major phase when the content of silica poly-hollow microspheres was above 25 wt%. Furthermore, the micromorphology results reveal that the content of pores with many smaller aggregate microspheres increases as microspheres amount rises. As a result, along with the addition of silica poly-hollow microspheres, the bulk density decreases to 1.32±0.01 g/cm³, and open porosity ranges from 28.4±0.4% to 52.0±0.5%. Porous Si₂N₂O-Si₃N₄ multiphase ceramics prepared with 25 wt% silica poly-hollow microspheres addition possess flexural strength of 42.3±3.8 MPa, low dielectric constant of 3.31 and loss tangent of 1.93×10⁻³. It turns out to be an effective method to fabricate porous Si₂N₂O-Si₃N₄ composites with excellent mechanical and dielectric properties, which could be applied to radome materials.     

Ti doping and low-temperature sintering of BiFeO3 nanoparticles synthesized by the solvothermal method

In this study, nanoparticles of ferroelectric BiFeO₃ (BFO) doped with 0, 5, and 10 mol% Ti were synthesized by an ethanol-based solvothermal method, and their densification behavior was investigated. The nanoparticles were densified via a normal sintering process at a low temperature of about 600 °C, resulting in dense bulk ceramics of undoped and Ti-doped BFO with a relative density of over 90%. The weight loss due to bismuth evaporation during sintering was suppressed below 0.6% because of the low sintering temperature. The crystal structure analysis of the resulting ceramics confirmed the incorporation of Ti ions into the Fe³⁺ site of BFO. The results of dielectric and X-ray photoelectron spectroscopies showed that Ti doping effectively decreased the concentration of Fe⁴⁺ in the ceramics, leading to suppression of the extrinsic dielectric responses due to the Maxwell–Wagner effect and the hopping motion of the localized holes.     

Thermal and mechanical properties of Si3N4 ceramics obtained via two-step sintering

Si₃N₄ ceramics were prepared using novel two-step sintering method by mixing α-Si₃N₄ as raw material with nanoscale Y₂O₃–MgO via Y(NO₃)₃ and Mg(NO₃)₂ solutions. Si₃N₄ composite powders with in situ uniformly distributed Y₂O₃–MgO were obtained through solid–liquid (SL) mixing route. Two-step sintering method consisted of pre-deoxidization at low temperature via volatilization of in situ-formed MgSiO₃ and densification at high temperature. Variations in O, Y, and Mg contents in Si₃N₄–Y₂O₃–MgO during first sintering step are discussed. O and Mg contents decreased with increasing temperature because SiO₂ on Si₃N₄ surface reacted with MgO to form low-melting-point MgSiO₃ compound, which is prone to volatilize at high temperature. By contrast, Y content hardly changed due to high-temperature stability of Y–Si–O–N quaternary compound. In the second sintering step, skeleton body was densified, and the formation of Y₂Si₃O₃N₄ secondary phase occurred simultaneously. Two-step sintered Si₃N₄ ceramics had lower total oxygen content (1.85 wt%) than one-step sintered Si₃N₄ ceramics (2.51 wt%). Therefore, flexural strength (812 MPa), thermal conductivity (92.1 W/m·K), and fracture toughness (7.6 MPa?m^1/2) of Si₃N₄ ceramics prepared via two-step sintering increased by 28.7%, 16.9%, and 31.6%, respectively, compared with those of one-step sintered Si₃N₄ ceramics.     

Fabrication of 3D structures via direct ink writing of kaolin/graphene oxide composite suspensions at ambient temperature

Kaolin/graphene oxide composite has been widely utilized in aero-space and architectural engineering applications due to its excellent mechanical property. Direct ink writing (DIW) is a freeform rapid prototyping technology that could be used to accurately fabricate the resulting size with complex shapes. In this study, we reported the DIW of kaolin/graphene oxide (GO) composite suspensions (KGCS) to assemble 3D structures at ambient temperature for the first time. The effects of GO on the chemical constitution and microstructure of kaolin suspensions were investigated. Rheology was characterized to ensure printability of KGCS. The addition of GO in kaolin suspensions quickened a flocculation structure, which dramatically changed their rheology properties. The DIW of 3D structures from the optimal KGCS sample maintained their initial shape without spreading. The flexural and compressive strengths of the dried optimal KGCS samples were obviously enhanced due to the improvement and reduction of the micro-defects compared from cured kaolin matrix.     

Effects of Li2CO3 and Sm2O3 additives on low-temperature sintering and piezoelectric properties of PZN-PZT ceramics

To assist the development of applications for multilayer piezoelectric devices, the low-temperature sintering piezoelectric ceramics of 0.3Pb(Zn_1/3Nb_2/3)O₃-0.7Pb(Zr_0.49Ti_0.51)O₃ with Li₂CO₃ and Sm₂O₃ additives were fabricated by a conventional solid-state reaction, and their structural and piezoelectric properties were studied. With the addition of Li₂CO₃, the minimum sintering temperature of 0.3Pb(Zn_1/3Nb_2/3)O₃-0.7Pb(Zr_0.49Ti_0.51)O₃ piezoelectric ceramics was reduced from 1125 °C to 950 °C through the formation of a liquid phase and its piezoelectric properties showed almost no degradation. When the sintering temperature was below 950 °C, however, the piezoelectric properties degraded obviously. The additional Sm₂O₃ resulted in a significant improvement in the piezoelectric properties of 0.3Pb(Zn_1/3Nb_2/3)O₃-0.7Pb(Zr_0.49Ti_0.51)O₃ ceramic with added Li₂CO₃. When sintered at 900 °C, the optimized properties of the 0.3Pb(Zn_1/3Nb_2/3)O₃-0.7Pb(Zr_0.49Ti_0.51)O₃ piezoelectric ceramic with 0.3 wt% Li₂CO₃ and 0.3 wt% Sm₂O₃ were obtained as d₃₃ = 483 pC/N, k₃₁ = 0.376, Q_m = 73, ɛ_r = 2524, tan δ = 0.0178.     

Fabrication of YAG ceramic tube by UV-assisted direct ink writing

Yttrium aluminium garnet (YAG) ceramic slurries with well-posed printability for ultraviolet(UV) curing-assisted, direct ink writing (DIW) were successfully prepared in this study by optimising the types and contents of dispersants, as well as solids loading. The rheological test results showed that Disperbyk-103 had the best dispersion effect, and the ceramic slurry with the solids loading of 76 wt% was obtained by adding 3.0 wt% Disperbyk-103. In addition, the effect of the coupling relationship between the printing parameters on the shape control of the sample was studied. After debinding, the printed ceramic green body was sintered at 1750 °C for 6 h, and the in-line transmittance of the sintered ceramic was 84.0% at 1064 nm. Using the developed method, a high-aspect-ratio ceramic tube with a wall thickness of approximately 1 mm, without obvious deformation, was successfully fabricated.     

Thermal conductivity and mechanical properties of Si3N4 ceramics with binary fluoride sintering additives

Silicon nitride (Si₃N₄) ceramics were fabricated by gas pressure sintering (GPS) using four sintering additives: Y₂O₃–MgO, Y₂O₃–MgF₂, YF₃–MgO, and YF₃–MgF₂. The phase composition, grain growth kinetics, mechanical properties, and thermal conductivities of the Si₃N₄ ceramics were compared. The results indicated that the reduction of YF₃ on SiO₂, induced a high Y₂O₃/SiO₂ secondary phase ratio, which improved the thermal conductivity of the Si₃N₄ ceramics. The depolymerization of F atom reduces the diffusion energy barrier of solute atom and weakens the viscous resistance of anion group, which was beneficial to grain boundary migration. Besides exhibiting a lower grain growth exponent(n = 2.5)and growth activation energy (Q = 587.94 ± 15.35 kJ/mol), samples doped with binary fluorides showed excellent properties, including appreciable thermal conductivity (69 W m⁻¹ K⁻¹), hardness (14.63 ± 0.12 GPa), and fracture toughness (8.75 ± 0.18 MPa m^1/2), as well as desirable bending strength (751 ± 14 MPa).     

Fabrication of Si3N4 ceramics with high thermal conductivity and flexural strength via novel two-step gas-pressure sintering

Si₃N₄ ceramic substrates serving as heat dissipater and supporting component are required to have excellent thermal and mechanical properties. To prepare Si₃N₄ with desirable properties, a novel two-step gas-pressure sintering route including a pre-sintering step followed by a high-temperature sintering step was devised. The effects of pre-sintering temperature (1500 – 1600 °C) on the phase transformation, microstructure, thermal and mechanical properties of the samples were studied. The pre-sintering temperature played an important role in adjusting the Si₃N₄ particles’ rearrangement and α→β transformation rate. Furthermore, the densification process for the Si₃N₄ ceramics prepared via the two-step gas-pressure sintering was revealed. After sintered at 1525 °C for 3 h followed by a high-temperature sintering at 1850 °C for another 3 h, the prepared Si₃N₄ compact with a bimodal microstructure presented the highest thermal conductivity and flexural strength of 79.42 W·m^?1·K^?1 and 801 MPa, respectively, which holds great application prospects as ceramic substrates.     

Mechanical and dielectric properties of Si3N4-SiO2 ceramics prepared by digital light processing based 3D printing and oxidation sintering

Si₃N₄-SiO₂ ceramics are considered as the preferred high-performance wave-transmitting material in the aerospace field. However, traditional fabrication methods for Si₃N₄-SiO₂ ceramics have the disadvantages of high cost and complicated fabrication process. In this paper, Si₃N₄-SiO₂ ceramics with excellent mechanical and dielectric properties were fabricated by digital light processing-based 3D printing combined with oxidation sintering. Firstly, the curing thickness and viscosity of slurries with different solid loadings for vat photopolymerization-based 3D printing were studied. Then, the effects of the sintering temperature on the linear shrinkage, phase composition, microstructure, flexural strength, and dielectric properties of Si₃N₄-SiO₂ ceramics, and the influences of solid loading on them were explored. The curing thickness and viscosity of the slurry with a solid loading of 55 vol% were 30 μm and ∼1.5 Pa‧s, respectively. The open porosity and the flexural strength of Si₃N₄-SiO₂ ceramic with a solid loading of 55 vol% were 4.3 ± 0.61% and 76 ± 5.6 MPa, respectively. In the electromagnetic wave band of 8–18 GHz, the dielectric constant of Si₃N₄-SiO₂ ceramics was within the range of less than 4, and the dielectric loss remained below 0.09. The method of digital light processing-based 3D printing combined with oxidation sintering can be further extended in the preparation of Si₃N₄-based structure-function integrated ceramics.     

Si3N4-BN-SiCN ceramics with unique hetero-interfaces for enhancing microwave absorption properties

SiCN-based ceramics with broadband and strong microwave absorption properties are desired for the structural and functional integration of ceramic matrix composites. The elemental composition and thermal expansion coefficients of the ceramics matrix crucially affect its microstructure and electromagnetic wave (EMW) absorption properties. BN layer with lower electrical conductivity and higher specific area, exhibits both the impedance matching characteristic and EMW attenuation in the process of multiple reflections, electrical conductivity loss, dipole polarization and interfacial polarization. Therefore, Si₃N₄-BN-SiCN ceramics, which were synthesized using chemical vapor infiltration (CVI) method, construct unique hetero-interface of Si₃N₄-BN, Si₃N₄–SiCN and BN-SiCN. Therefore, the Si₃N₄-BN-SiCN ceramics have outstanding EMW absorption performance and realize an effective absorption bandwidth (EAB) that covers the whole X band and the minimum reflection coefficient (RC) reaches -18.43 dB at a thickness of 3.37 mm.     

Rutile TiO2 microwave dielectric ceramics prepared via cold sintering assisted two step sintering

In this work, a sintering route named cold sintering assisted two step sintering process (CSP-TS) is presented to prepare rutile TiO₂ ceramics with submicron grain sizes. Cold sintering process at 300 °C with tetrabutyl titanate and water as the liquid phase yields a ‘green body’ with a relatively high density of ～80 %, and finally dense (98.5–99.8 %) rutile TiO₂ ceramics with grain sizes of ～600 nm can be obtained in the second sintering process at 950?1000 °C. The microstructural analysis with SEM and TEM indicates that the CSP-TS samples sintered at 950 °C have an obvious phenomenon of recrystallization, accompanying by a decrease of amorphous phases and a formation of clear grain boundaries. Besides, the rutile TiO₂ ceramics prepared by CSP-TS possess excellent microwave dielectric properties with relative permittivity of 92.0–98.4 and Q × f values of 27,800?31,900 GHz. Therefore, it is feasible to utilize CSP-TS to prepare ceramics with small grain sizes at low sintering temperatures.     

Effects of Gd2O3 and MgSiN2 sintering additives on the thermal conductivity and mechanical properties of Si3N4 ceramics

Si₃N₄ ceramics were prepared by gas pressure sintering at 1900°C for 12 h under a nitrogen pressure of 1 MPa using Gd₂O₃ and MgSiN₂ as sintering additives. The effects of the Gd₂O₃/MgSiN₂ ratio on the densification, microstructure, mechanical properties, and thermal conductivity of Si₃N₄ ceramics were systematically investigated. It was found that a low Gd₂O₃/MgSiN₂ ratio facilitated the thermal diffusivity of Si₃N₄ ceramics while a high Gd₂O₃/MgSiN₂ ratio benefited the densification and mechanical properties. When the Gd₂O₃/MgSiN₂ ratio was 1:1, Si₃N₄ ceramics obtained an obvious exaggerated bimodal microstructure and the optimal properties. The thermal conductivity, flexural strength, and fracture toughness were 124 W·m⁻¹·k⁻¹, 648 MPa, and 9.12 MPa·m^1/2, respectively. Comparing with the results in the literature, it was shown that Gd₂O₃-MgSiN₂ was an effective additives system for obtaining Si₃N₄ ceramics with high thermal conductivity and superior mechanical properties.     

On the fabrication and mechanical properties of Si3N4 ceramics with low content sintering additives

Si₃N₄ ceramics were prepared by hot pressing (HP) and spark plasma sintering (SPS) methods using low content (5 mol%) Al₂O₃–RE₂O₃(RE = Y, Yb, and La)–SiO₂/TiN as sintering additives/secondary additives. The effects of sintering additives and sintering methods on the composition, microstructures, and mechanical properties (hardness and fracture toughness) were investigated. The results show that fully density Si₃N₄ ceramics could be fabricated by rational tailoring of sintering additives and sintering method, and TiN secondary additive could promote the density during HP and SPS. Besides, SN-AYS-SPS possesses the most competitive mechanical properties among all the as-prepared ceramics with the Vickers hardness as 17.31 ± .43 GPa and fracture toughness as 11.07 ± .48 MPa m^1/2.     

Microstructure and enhanced magnetic properties of low-temperature sintered LiZnTiMn ferrite ceramics with Bi2O3-Al2O3 additive

Bi₂O₃ and Al₂O₃ were proven to separately have an impact on grain growth of LiZn ferrite ceramics. In this study, we synthesized LiZnTiMn ferrite ceramics under low temperature (<920 °C) using rationally designed formula of Bi₂O₃-Al₂O₃ as sintering agents. Microstructures, densities, and ferromagnetic performances were systematically investigated. Results show that appropriate amount of Bi₂O₃-Al₂O₃ leads to successful sintering of LiZnTiMn ferrites even below 900 °C. X-Ray diffraction (XRD) and scanning electron microscopy (SEM) results show that spinel structure ferrite ceramics were obtained and that the addition of Bi₂O₃-Al₂O₃ accelerated solid-state reaction. Corresponding ferromagnetic properties, including saturation induction (B_s), remanence square ratio, coercivity (H_c), ferromagnetic resonance linewidth (ΔH), and M_s, were also investigated. At 920 °C, with addition amount of x=1 wt%, we obtain excellent performance: B_s=306 mT, B_r/B_s=0.849, H_c=2.34Oe, and ΔH=275 Oe. Results indicate that Bi₂O₃-Al₂O₃ is promising sintering agent for low-temperature sintering of LiZnTiMn ferrite ceramics.     

(Cu1/3Nb2/3)4+ ionic substituting effects,low-temperature sintering behaviors,and improved temperature stability of Ba3Nb4Ti4O21 microwave dielectric ceramics

In this study, (Cu_1/3Nb_2/3)⁴⁺ complex cation and BaO–ZnO–B₂O₃ glass frit were adopted to solve the high sintering temperature and poor temperature stability of Ba₃Nb₄Ti₄O₂₁ ceramics. It is shown that pure Ba₃Nb₄Ti₄O₂₁ phase was formed when Ti site was partially replaced by (Cu_1/3Nb_2/3)⁴⁺ cation. The increasing number of dopants decreases the dielectric polarizability, correspondingly, the dielectric constant and temperature coefficient of the resonance frequency values are reduced consistently. The variation of the Q × f value is determined by internal ionic packing fraction and external sintering densification. The (Cu_1/3Nb_2/3)⁴⁺ cation effectively decreases the suitable sintering temperature from 1200 to 1050 °C while greatly improving the temperature stability. BaO–ZnO–B₂O₃ glass was used to further improve the low-temperature sintering characteristics of Ba₃Nb₄Ti₄O₂₁ ceramics. It is proven that the addition of glass frits effectively decreases the temperature to 925 °C with combinational excellent microwave dielectric properties: ε_r ～55.6, Q × f ～5700 GHz, τ_f ～3 ppm/^°C, making the Ba₃Nb₄Ti₄O₂₁ ceramics promising in the applications of low-temperature cofired ceramic technology.     

Low-temperature synthesis of K0.5Na0.5NbO3 ceramics in a wide temperature window via cold-sintering assisted sintering method and enhanced electrical properties

High temperatures (≥ 1100 °C) and narrow temperature window (～ 20 °C) for sintering dense K_0.5Na_0.5NbO₃ ceramics always deteriorate their electrical properties. Here, via cold-sintering assisted sintering method, dense K_0.5Na_0.5NbO₃ ceramics were obtained in a wide temperature span between 800 °C and 1000 °C. An aqueous solution of NaOH and KOH mixture was used as transient liquid. Effects of liquid content (LC), molar concentration (MC) of liquid, cold-sintering temperature (T_CS), and post-annealing temperature (T_AN) on densification and electrical properties of the ceramics were investigated in detail. The ceramics prepared using LC = 10 wt%, MC = 10 mol/L, T_CS = 350 °C, and T_AN = 900 °C exhibit excellent electrical properties with d₃₃ = 123 pC/N, ε_r = 609, tanδ = 0.021, P_r = 28.0 μC/cm², P_m = 39.2 μC/cm², and E_c = 20.3 kV/cm. Compared to the ceramics with same or similar compositions via conventional solid-state sintering, the present K_0.5Na_0.5NbO₃ ceramics exhibit excellent electrical properties. The study endows the cold-sintering assisted sintering the successful method to prepare K_0.5Na_0.5NbO₃ ceramics at low temperatures and in a wide temperature window.     

Mechanical and dielectric properties of direct ink writing Si2N2O composites

Si₂N₂O composites were achieved via direct ink writing technique and pressureless sintering. The design and optimization of inks and the effect of mass ratio of Si₃N₄ and SiO₂ on the phase composition, microstructure, mechanical properties and dielectric properties of composites were systematically investigated. The inks exhibit superior stability and printability. Increasing SiO₂ content facilitated densification and enhancement of mechanical property. The generation of β-Si₃N₄ and Si₂N₂O and the nucleation of cristobalite were restrained by high content SiO₂. The ceramic composites with the flexural strengths from 74.1MPa to 104.9MPa and low dielectric constant (≤4.68) were fabricated. This strategy provides a systematic reference for synthesis of high-performance porous Si₂N₂O composites based on the DIW.     

Effects of AlN inorganic binder on the properties of porous Si3N4 ceramics prepared by selective laser sintering

Porous Si₃N₄ ceramics are widely used in the aerospace field due to its lightweight, high-strength, and high wave transmission. Traditional manufacturing methods are difficult to fabricate complex structural and functional ceramic parts. In this paper, selective laser sintering (SLS) technology was applied to prepare porous Si₃N₄ ceramics using AlN as an inorganic binder. And the effects of AlN content on the properties of the obtained ceramic samples were explored. As the AlN content increased, nano-Al₂O₃ and nano-SiO₂ formed the eutectic liquid phase, enhancing the sintering densification and phase transformation of Si₃N₄ poly-hollow microspheres (PHMs). The island-like partial densification structures in Si₃N₄ green bodies increased. During the high-temperature sintering, the eutectic liquid phase partially transformed into the mullite phase or reacted with AlN and Si₃N₄ to form the Sialon phase. With the increase of AlN content, the fracture mode of Si₃N₄ ceramics changed from fracturing along PHMs to fracturing across PHMs. The bonding depth between PHMs increased and the connection between the grains was tighter, so the Si₃N₄ ceramics became denser. With the increase of AlN addition, the total porosity of the porous Si₃N₄ ceramics tended to decrease and the flexural strength gradually increased. When AlN content was 20 wt%, the total porosity and the flexural strength were 33.6% and 23.9 MPa, respectively. The addition of AlN inorganic binder was carried out to develop a novel way to prepare high-performance porous Si₃N₄ ceramics by SLS.