ZnO quantum dot based thin films as promising electron transport layer: Influence of surface-to-volume ratio on the photoelectric properties

ZnO quantum dots (QDs) with average particle size of 4.4 nm were prepared using a low temperature processing solvothermal route. ZnO QD based thin films were then prepared from the ZnO QD based solution using spin coating technique and annealed at 250, 350 and 450 °C. The average grain size and energy band gap of ZnO were respectively increased and decreased from 5.5 to 22.9 nm and 3.37 to 3.27 eV upon increasing the annealing temperature up to 450 °C. The photoluminescence analysis showed that the as-coated ZnO film and ZnO film annealed at 250 °C have high density of oxygen vacancies; these defects were reduced upon increasing the temperature to 350 and 450 °C. The photoelectric properties of the films were strongly affected by the grain size and the defects present in the films. The photo-to-dark current ratio (PDCR) was decreased from 3723 to 371%, whereas the responsivity was increased from 1.25 to 218 mA/W with the increase of temperature to 450 °C. As-coated and 250 °C-annealed films exhibited better photoresponse than others in terms of PDCR, rise time and fall time due to their larger surface-to-volume ratio, making them promising candidate as electron transport layer in perovskite solar cells.     

Electrodeposited vertically aligned ZnO nanorods thin films on steel substrate for CdS quantum dots sensitized solar cell

In the present study, we report the optimization of various deposition parameters viz. bath temperature, deposition time and current density to deposit densely packed and vertically aligned ZnO nanorod thin films on cost effective substrate, i.e. steel, by electrodeposition technique. The obtained vertically aligned ZnO nanorod thin films are sensitized by CdS quantum dots (QDs) and utilized for photoelectrochemical (PEC) cell application. Effect of redox electrolyte on the PEC cell properties of CdS QDs sensitized ZnO nanorod thin films is investigated using two different electrolytes viz. polysulfide and ferro(i)cyanide.¹ CdS QDs, of around 10 nm in diameter, are synthesized by chemical bath deposition (CBD) method. The deposited ZnO nanorods having diameter in the range 100–120 nm showed hydrophobic nature, which changed to hydrophilic after CdS QDs sensitization. The maximum short circuit current density (J_sc) and open circuit voltage (V_oc) are observed for ferro(i)cyanide electrolyte and are found to be 680 μA cm⁻² and 520 mV, respectively, under 10 mW cm⁻² of illumination. However, better photoelectrode stability is observed for polysulfide electrolyte.     

Improved physical properties of Al-doped ZnO thin films deposited by unbalanced RF magnetron sputtering

Room temperature Al-doped ZnO (AZO) thin films with improved crystalline and optical properties were grown on normal glass substrates using unbalanced RF magnetron sputtering technique. To modify the plasma density towards the substrate and enhance the crystalline nature, an additional magnetic field ranging from 0 to 6.0 mT has been applied to the AZO target by proper tuning of solenoid coil current from 0 to 0.2 A respectively, which plays a significant role for controlling the physical properties of AZO films. The results from XRD studies indicate that all AZO films were composed of hexagonal wurtzite structure with better crystal quality through the applied magnetic field, ZnO (002) plane as a preferred growth. Furthermore, XPS studies suggested that symmetric chemical shifts in the binding energies for the Zn 2p and O1s levels with applied magnetic field. SEM analysis revealed the formation of a smooth, homogeneous and dense morphological surface with applied magnetic field. From AFM analysis, it was observed that the applied magnetic field strongly influenced the grain size and the films showed decreasing tendency in electrical resistivity. Films exhibited superior optical transmittance more than 94% in the visible region essentially due to the formation of better crystalline nature. The results indicate that improved band gap from 3.10 to 3.15 eV with additional magnetic field varied from 0 to 6.0 mT respectively.     

Structural,optical and electrical properties of low temperature grown undoped and (Al,Ga) co-doped ZnO thin films by spray pyrolysis

Aluminum and gallium co-doped ZnO (AGZO) thin films were grown by simple, flexible and cost-effective spray pyrolysis method on glass substrates at a temperature of 230 °C. Effects of equal co-doping with aluminum (Al) and gallium (Ga) on structural, optical and electrical properties were investigated by X-ray diffraction (XRD), UV–vis–NIR spectrophotometry and Current–Voltage (I–V) measurements, respectively. XRD patterns showed a successful growth with high quality polycrystalline films on glass substrates. The predominant orientation of the films is (002) at dopant concentrations ≤2 at% and (101) at higher dopant concentrations. Incorporation of Al and Ga to the ZnO crystal structure decreased the crystallite size and increased residual stress of the thin films. All films were highly transparent in the visible region with average transmittance of 80%. Increasing doping concentrations increased the optical band gap, from 3.12 to 3.30 eV. A blue shift of the optical band gap was observed from 400 nm to 380 nm with increase in equal co-doping. Co-doping improved the electrical conductivity of ZnO thin films. It has been found from the electrical measurements that films with dopant concentration of 2 at% have lowest resistivity of 1.621×10⁻⁴ Ω cm.     

Influence of ZnO buffer layer thickness on the electrical and optical properties of indium zinc oxide thin films deposited on PET substrates

The influence of the ZnO buffer layer thickness on the electrical and optical properties of In₂O₃–10 wt.% ZnO and ZnO bilayers deposited on polyethylene terephthalate (PET) substrates by RF magnetron sputtering were investigated. The optimum ZnO buffer layer thickness was found to be 90 nm which gives the lowest electrical resistivity of the bilayer of IZO and ZnO deposited on the PET substrate. The surface roughness decreases and diffusion of moisture and gas is more efficiently restrained, which contributes to lower the resistivity of the bilayer as the ZnO buffer layer thickness is increased. On the other hand, the total resistivity of the bilayer increases as the ZnO buffer layer thickness is increased because the resistivity of ZnO is higher than that of IZO. Introduction of a ZnO buffer layer does not nearly affect the IZO/ZnO/PET sample.     

Tunability of optical constants of Se-Ge-Ag thin films based on change in resistivity with temperature for solar cells

Thin films of semiconductor Se₈₀Ge_20-xAg_x (x = 0, 3, 6, 9, 12 and 15 at.%) were deposited by the thermal evaporation technology. Through optical and electrical characterization, the influence of the Ag ratio on the photoelectric parameters of Se–Ge thin film was studied. The X-ray diffraction pattern showed the amorphous nature of the deposited films as well as the polycrystalline state when the films were annealed at the maximum crystallization temperature (415 K), which was determined by the first derivative of the resistivity curve with respect to temperature. The crystallization kinetics of the film was extracted from the electrical analysis by measuring the change in resistivity with temperature. The electrical results of the thin film showed three regions; namely, amorphous, extended (crystalline) and hopping. In the extended and hopping states, the activation energy and pre-exponential factors were calculated. The optical constants, extinction coefficient and refractive index were calculated using the transmittance and reflectance of the grown Se₈₀Ge_20-xAg_x films. The energy gaps of the films were estimated in the strong absorption regions. The changes in the bandgap energy of the film by thermal annealing can help to produce materials with acceptable band gaps for use as absorber layers in solar cell applications. Also, the results provide microscopic insights and studies on the structure, electr-othermal and optical properties of Ag metal-doped GeSe as a back contact of solar cells.     

Growth and properties of Cu3SbS4 thin films prepared by a two-stage process for solar cell applications

Cu₃SbS₄ is a promising material for thin film heterojunction solar cells owing to its suitable optical and electrical properties. In this paper, we report the preparation of Cu₃SbS₄ thin films by annealing the Sb₂S₃/CuS stacks, produced by chemical bath deposition, in a graphite box held at different temperatures. The influence of annealing temperature on the growth and properties of these films is investigated. These films are systematically analyzed by evaluating their structural, microstructural, optical and electrical properties using suitable characterization techniques. X-ray diffraction analysis showed that these films exhibit tetragonal crystal structure with the lattice parameters a=0.537 nm and b=1.087 nm. Their crystallite size increases with increasing annealing temperature of the stacks. Raman spectroscopy analysis of these films exhibited modes at 132, 247, 273, 317, 344, 358 and 635 cm⁻¹ due to Cu₃SbS₄ phase. X-ray photoelectron spectroscopy analysis revealed that the films prepared by annealing the stack at 350 °C exhibit a Cu-poor and Sb-rich composition with +1, +5 and −2 oxidation states of Cu, Sb and S, respectively. Morphological studies showed an improvement in the grain size of the films on increasing the annealing temperature. The direct optical band gap of these films was in the range of 0.82–0.85 eV. Hall measurements showed that the films are p-type in nature and their electrical resistivity, hole mobility and hole concentration are in the ranges of 0.14–1.20 Ω-cm, 0.05–2.11 cm² V⁻¹ s⁻¹ and 9.4×10²⁰–1.4×10¹⁹ cm⁻³, respectively. These structural, morphological, optical and electrical properties suggest that Cu₃SbS₄ could be used as an absorber layer for bottom cell in multi-junction solar cells.     

Influence of substrate temperature on the microstructure of YSZ films and their application as the insulating layer of thin film sensors for harsh temperature environments

Thin film sensors are employed to monitor the health of hot-section components of aeroengine intelligence (for instance, blades), and electrical insulating layers are needed between the metal components and thin film sensors. For this purpose, the electrical insulation characteristics of an yttria-stabilized zirconia (YSZ)/Al₂O₃ multilayer insulating structure were investigated. First, YSZ thin films were deposited by DC reactive sputtering at various substrate temperatures, and the microstructural features were investigated by scanning electron microscopy and X-ray diffraction. The results indicate that the micromorphology of the YSZ thin film gradually became denser with increasing substrate temperature, and no new phases appeared. The compact and uniform topography of the YSZ thin film improved the insulation properties of the multilayer insulating structure and enhanced the adhesion of the thin film sensors. In addition, the electrical insulation properties of the YSZ/Al₂O₃ multilayer insulating structure were evaluated via insulation resistance tests from 25 to 800 °C, in which the YSZ thin film was deposited at 550 °C. The results show that the insulation resistance of the multilayer structure increased by an order of magnitude compared with that of the conventional Al₂O₃ insulating layer, reaching 135 kΩ (5.1 × 10^?6 S/m) at 800 °C. Notably, the insulation resistance was still greater than 75 kΩ after annealing at 800 °C for 5 h. Finally, the shunt effect of the YSZ/Al₂O₃ multilayer insulating structure was estimated using a PdCr thin film strain gauge. The relative resistance error was 0.24%, which demonstrates that the YSZ/Al₂O₃ multilayer insulating structure is suitable for thin film sensors.