Mechanical and dielectric properties of functionalized boron nitride nanosheets/silicon nitride composites

Uniformly dispersed boron nitride nanosheets (BNNSs) reinforced silicon nitride (Si₃N₄) composites were prepared by surface modification assisted flocculation combined with SPS sintering. In order to improve the dispersibility of the BNNSs in the composites, the liquid phase stripped BNNSs are surface functionalized by a two-step covalently modification. The amino-modified BNNSs (NH₂-BNNSs) and Si₃N₄ powders have opposite surface potential, mixed evenly by electrostatic interaction during flocculation. The results showed that mechanical properties of Si₃N₄ composites were obviously enhanced by adding NH₂-BNNSs. The fracture toughness and bending strength of Si₃N₄ composites added 0.75 wt% NH₂-BNNSs were increased by 34% and 28%, respectively, compared with monolithic Si₃N₄. Toughening mechanisms are synergistic action of the torn, pull-out or bridging of BNNSs and crack deflection mechanisms with microstructural analyzes. The dielectric properties of the Si₃N₄ ceramics are also improved after the addition of NH₂-BNNSs.     

Dielectric properties of silicon nitride ceramics produced by free sintering

The silicon nitride ceramics with a beneficial combination of low dielectric losses and improved physical properties was fabricated by cold isostatic pressing and pressureless sintering. The fine grain microstructure, three-phase composition based on the β-SiAlON, the small amount of the glass phase and relatively small porosity promote a unique combination of a low thermal conductivity 14.51 W m⁻¹ K⁻¹ and low dielectric loss 1.4·10⁻³. A novel method is proposed to overcome the main drawbacks of the commercial and high-cost technologies.     

Tunable microwave absorption performance of carbon fiber-reinforced reaction bonded silicon nitride composites

The hybrid network of Si₃N₄ whiskers and conducting carbon fiber has great potential for microwave absoprtion applications. The high electrical conductivity of the carbon fiber helps to transform the microwave transparent Si₃N₄ into microwave absorbing materials. Herein, the microwave absorption performance of 5–20 vol % of carbon fiber reinforced reaction bonded Si₃N₄ (C_f-RBSN) composites have been discussed in detail. The C_f reinforcement tuned the X-band dielectric properties of the RBSN composites. The 5 vol % C_f-RBSN composite exhibit a minimum reflection loss (RL_min) of ?36.16 dB (99.998% microwave absorption) at 11.89 GHz and a high specific reflection loss of 920 dB. g^?1 for 5.9 mm thickness, while 20 vol % C_f-RBSN composites resulted in RL_min of ?22.86 dB at 11.56 GHz with a low thickness of 1.5 mm. Thus, the superior microwave absorption performance of the prepared lightweight composites results from the multiple interfacial polarization, dipole polarization, and conduction loss due to the 3D network of interconnected Si₃N₄ whiskers and C_f.     

Fabrication and mechanical properties of boron nitride nanotube reinforced silicon nitride ceramics

In this study, silicon nitride (Si₃N₄) ceramics added with and without boron nitride nanotubes (BNNTs) were fabricated by hot-pressing method. The influence of sintering temperature and BNNTs content on the microstructures and mechanical properties of Si₃N₄ ceramics were investigated. It was found that both flexural strength and fracture toughness of Si₃N₄ were improved when sintering temperature increases. Moreover, α-Si₃N₄ phase could transform into β-Si₃N₄ phase completely when sintering temperature rises to 1800 °C and above. BNNTs can enhance the fracture toughness of Si₃N₄ dramatically, which increases from 7.2 MPa m^1/2 (no BNNTs) to 10.4 MPa m^1/2 (0.8 wt% BNNTs). However, excessive addition of BNNTs would reduce the fracture toughness of Si₃N₄. Meanwhile, the flexural strength and relative density of Si₃N₄ decreased slightly when BNNTs were added. The related toughening mechanism was also discussed.     

改性氮化铝/环氧树脂复合材料的制备研究

采用共混-浇注成型法制备氮化铝/环氧树脂AlN/E-51复合材料。借助静止沉淀法、接触角、傅立叶红外光谱FT-IR和热失重TGA等进行分析表征。探讨了AlN用量和表面改性对复合材料力学性能的影响。结果表明,KH-560以化学键结合在AlN表面。复合材料的弯曲和冲击强度均随AlN用量的增加而提高,当AlN用量为10%时,复合材料的力学性能最佳。()()()     

聚氨酯/水滑石复合材料的制备及性能研究

以水滑石(LDH)和聚氨酯(PU)为原料,采用溶液流延法成膜,制备了一系列不同LDH含量的复合材料;借助广角X射线衍射和扫描电镜对PU/LDH复合材料的结构和形貌进行了表征,并对其热稳定性能和力学性能进行了测试。结果表明:LDH在PU基体中以插层结构为主,PU大分子链部分插入LDH层间;适量的LDH粒子能够均匀分散在PU基体中;LDH对PU材料的热分解无阻隔作用;适量的LDH粒子能有效提高PU材料的拉伸强度和断裂伸长率,当PU/LDH复合材料中LDH的质量分数为5%时,复合材料的拉伸强度和断裂伸长率达到最大,分别为15.9 MPa和443.8%。     

硅复合刚玉-氮化硅材料的性能、组成及显微结构

将由50% (质量分数,下同)氧化铝粉、37. 5%氮化硅粉和12. 5%硅粉组成的混合料和由62. 5%氧化铝粉和37. 5%氮化硅粉组成的混合料分别压制成试样,分别在空气和埋炭气氛中于1600℃保温2h烧成,然后检测试样的体积密度、显气孔率和常温耐压强度,并采用XRD、SEM、EDS等手段分析试样的物相组成和显微结构。结果表明:与未加硅粉的试样相比,加入硅粉的试样在两种气氛中烧成后,显气孔率较低,强度较大,说明硅对刚玉-氮化硅材料具有助烧结作用;在空气中烧成后,试样中残留有较多的单质硅,这些单质硅均匀分布于刚玉和氮化硅颗粒的空隙间;在埋炭气氛中烧成后,单质硅原位反应生成了O’SiAlON和SiC。     

Dielectric and microwave properties of carbon nanotubes/carbon black filled natural rubber composites

Abstract

Natural rubber (NR) based nanocomposites containing a constant amount (50 phr) of standard furnace carbon black and carbon nanotube (CNT) at a concentration from 1 to 5 phr have been prepared. Their dielectric (dielectric permittivity and dielectric loss) and microwave properties (coefficients of absorption and reflection of the electromagnetic waves and electromagnetic interference shielding effectiveness) have been investigated in the 1–12 GHz frequency range. The results achieved allow recommending CNTs as second filler for NR based composites to afford specific absorbing properties.     

Evolution of microstructure and properties of Si3N4 whisker reinforced composites during densification by polymer infiltration and pyrolysis

Si₃N₄ whisker (Si₃N_4w) reinforced composites were prepared by a near-net shaping process, i.e., gel-casting of the Si₃N_4w preform followed by polymer infiltration and pyrolysis (PIP) densification using polysilazane as precursor. The densification process by PIP was described mathematically, after which several key parameters affecting densification efficiency were discussed. The small pore size (0.04 ～ 1 μm) of Si₃N_4w preform can cause filtration effect (low permeability of precursor with a molecular size bigger than pore size), which resulted in the density gradient of the composites. Porosity (P) dependence of flexural strength and elastic modulus of Si₃N_4w/Si₃N₄ followed a power law of (1 – P). With increasing density, the response of Si₃N_4w when confronting cracks transformed from whisker debonding to whisker fracture, which was supposed to be due to the increase of whisker/matrix interface strength. The Si₃N_4w/Si₃N₄ developed by us achieved a good balance between high strength and low dielectric constant, making it promising for high-temperature wave-transparent application.     

Electrical conductivity,dielectric and microwave absorption properties of graphene nanosheets/magnesia composites

Herein, a novel microwave absorbing material with Graphene nanosheets (GNSs) as microwave absorbing filler and magnesia (MgO) as matrix were prepared by hot-pressing sintering. The composites were highly dense with a homogeneous distribution of GNSs. Electrical conductivity, dielectric and microwave absorption properties in X-band were investigated. The results revealed that the electrical conductivity of the GNSs/MgO composites showed a typical percolation-type behavior with a percolation threshold of 3.34 vol%. With GNSs content increased to 3 vol%, the real permittivity, imaginary permittivity and dielectric loss tangent of the composites increased from ～9, ～0 and ～0 to 26–43, 23–28 and 0.55–0.96, respectively. By adjusting the GNSs content, thickness and frequency, the 2.5 vol% GNSs/MgO composite shows the minimum reflection loss of ?36.5 dB at 10.7 GHz and the reflection loss below ?10 dB (90% absorption) ranges from 9.4 to 11.4 GHz with 1.5 mm thickness, exhibiting excellent microwave absorption properties.     

硅粉对刚玉-氮化硅复合材料表面氧化膜的影响

将T-60氧化铝粉、氮化硅粉和硅粉分别按50%、37.5%和12.5%的质量分数配料混合,经压制成型后,在空气中于1600℃保温2h烧成制得刚玉-氮化硅复合材料试样,借助于XRD、SEM、EDS等研究了加入硅粉对刚玉-氮化硅复合材料表面氧化膜组成和结构的影响。结果表明:在空气中烧成的刚玉-氮化硅复合材料表面氧化膜主要由富硅玻璃相、刚玉和莫来石组成;在刚玉-氮化硅复合材料中引入硅粉能减小氧化膜厚度,并能提高氧化膜的致密程度。     

AlON-SiAlON复合材料的制备及特性

为提高AlON陶瓷材料的抗氧化性能 ,制备了AlON -SiAl7O2 N7复相材料。在 1 75 0℃、0 .5MPa的N2 气氛中 ,保温 2h烧成不同Al2 O3/AlN/Si3N4配比的原料得到不同AlON/SiAl7O2 N7比的复相材料。因为在烧结SiAl7O2 N7的过程中 ,蒸发-凝聚的同时伴随着SiO气体的挥发 ,因此很难得到致密的AlON -SiAl7O2 N7复相材料。研究了AlON -SiAl7O2 N7复相材料在 1 30 0℃、空气中的抗氧化性能 ,同时作为比较 ,研究了相同条件下单相的AlON材料的抗氧化性能。结果表明 ,AlON -SiAl7O2 N7复相材料显示了较之单相的AlON陶瓷材料更好的抗氧化性能 ,这是因为氧化过程中所形成的含玻璃相的表面氧化层抑制了氧的向内扩散所致。     

Mechanical,dielectric and thermal properties of porous boron nitride/silicon oxynitride ceramic composites prepared by pressureless sintering

Porous boron nitride/silicon oxynitride (BN/Si₂N₂O) composites were fabricated by pressureless sintering at 1650 °C with Li₂O as sintering aid. The influence of Li₂O and hexagonal boron nitride (h-BN) contents on phase, microstructure, mechanical, dielectric and thermal properties of the resulting porous BN/Si₂N₂O composites was investigated. Increasing Li₂O content facilitated densification and decomposition of Si₂N₂O into Si₃N₄. The apparent porosity of the composites increases with the h-BN content increases and Si₂N₂O grain growth was restrained by the dispersed h-BN particles. The dielectric properties and thermal conductivities (TC) were affected mainly by porosity. Porous BN/Si₂N₂O ceramic composites with 4 mol% Li₂O and 25 mol% BN exhibit both low dielectric constant (3.83) and dielectric loss tangent (0.008) with good mechanical and thermal performance, suggesting possible use as high-temperature structural/functional materials.     

Improved electrical and thermal properties of silicon oxycarbide/spodumene composites

Novel bulk SiOC/spodumene composites have been developed by spark plasma sintering (SPS) at relatively low temperature (1200–1400 °C). Spodumene is a cheap and natural available lithium aluminosilicate mineral which acts as meltable/active filler. At 1300–1400 °C, the Al migrates toward the glassy matrix producing a Si-Al-O network and the crystallization of α-cristobalite. The C_free phase also experiences a deep transformation. The epitaxial growth of few-layered graphene over SiC particles occurs at 1400 °C. An increase in the phonon transport is observed (36%, 1.28 – 2.14 Wm⁻¹K⁻¹) associated to the reduction of the interface resistance between the partially crystallized SiO₂ matrix and the SiC nano-wires/graphene-like carbon conductive phase. The electrical conductivity increases (1.14 ×10⁻² – 8.1 Sm⁻¹) due to the densification reached and an increasing ordering degree of the tortuous C_free phase with a high quality of interconnection and crystallization. Raman parameters are determinant to understand the thermal and electrical response.     

Enhanced high-temperature dielectric properties and microwave absorption of SiC nanofibers modified Si3N4 ceramics within the gigahertz range

Si₃N₄ ceramics modified with SiC nanofibers were prepared by gel casting aiming to enhance the dielectric and microwave absorption properties at temperatures ranging from 25?°C to 800?°C within X-band (8.2–12.4?GHz). The results indicate that the complex permittivity and dielectric loss are significantly increased with increased weight fraction of SiC nanofibers in the Si₃N₄ ceramics. Meanwhile, both complex permittivity and dielectric loss of SiC nanofibers modified Si₃N₄ ceramics are obviously temperature-dependent, and increase with the higher test temperatures. Increased charges mobility along conducting paths made of self-interconnected SiC nanofibers together with multi-scale net-shaped structure composed of SiC nanofibers, Si₃N₄ grains and micro-pores are the main reason for these enhancements in dielectric properties. Moreover, the calculated microwave absorption demonstrates that much enhanced microwave attenuation abilities can be achieved in the SiC nanofibers modified Si₃N₄ ceramics, and temperature has positive effects on the microwave absorption performance. The SiC nanofibers modified Si₃N₄ ceramics will be promising candidates as microwave absorbing materials for high-temperature applications.     

Enhanced mechanical and dielectric properties of SiCf/SiC composites with silicon oxycarbide interphase

SiC_f/SiC composites with silicon oxycarbide (SiOC) interphase were successfully prepared using silicone resin as interphase precursor for dip-coating process and polycarbosilane as matrix precursor for PIP process assisted with hot mold pressing. The effects of SiOC interphase on mechanical and dielectric properties were investigated. XRD and Raman spectrum results show that SiOC interphase is composed of silicon oxycarbide and free carbon with a relatively low crystalline degree. The surface morphology of SiC fibers with SiOC interphase is smooth and homogeneous observed by SEM. The flexural strength and failure displacement of SiC_f/SiC composites with SiOC interphase vary with the thickness of interphase and the maximum value of flexural strength is 289 MPa with a failure displacement of 0.39 mm when the thickness of SiOC interphase is 0.25 µm. The complex permittivity of the composites increases from 8.8-i5.7 to 9.8-i8.3 with the interphase thicker.     

氮化铝陶瓷材料制备工艺与应用

概述了氮化铝材料的结构性质，粉末的合成方法，A1N陶恣的帛备方法及其应用。     

Influence of different matrices on the mechanical and microwave absorption properties of SiC fiber-reinforced oxide matrix composites

Fiber-reinforced ceramic matrix composites have excellent mechanical and microwave absorption properties, but still present considerable challenges. We prepared a SiC_f/mullite-SiO₂ composite (composite A) and a SiC_f/Al₂O₃-SiO₂ composite (composite B) by a precursor infiltration and sintering (PIS) process. Compared with the composite B, the composite A was easily densified. The flexural strength of the composite A reached 216 MPa, whereas that of the composite B was 159 MPa. The imaginary part of permittivity for composites A and B, which was determined by the contents of matrix and porosity, varied in the range of 2.5–3.5 and 3.6–5, respectively. The microwave absorption properties of the composite A were significantly enhanced in the range of 8.2–12.4 GHz. The results indicate that an optimal reflection loss of ?44 dB was reached at 12 GHz with a thickness of 2.9 mm for the composite A. These SiC fiber-reinforced oxide matrix materials have promising applications in microwave absorption, especially at high temperatures.     

Preparation strategy for low-stress and uniform SiC-on-diamond wafer: A silicon nitride dielectric layer

Reducing the self-heating of SiC- and GaN/SiC-based high-powered devices by integrating diamond films offers promising performance enhancement of these devices. However, such a reduction strategy faces serious problems, such as diamond nucleation on SiC and stress accumulation greater than 10 GPa. In this work, a SiN_x dielectric layer (～50 nm) was coated onto the C polar face of a 4H–SiC wafer using microwave plasma chemical vapor deposition (MPCVD) to improve direct dense diamond nucleation and growth, significantly reduce the stress, and build Si–C(SiC)?Si?C(diamond) bond bridges. This SiN_x thin layer, prepared by activating Si ions under Ar/N plasma during magnetron sputtering, gave rise to local Si₃N₄ crystal features and a low effective work function (EWF) for promoting surface dipoles with electronegative carbon-containing groups. In the H plasma environment during diamond growth, the local Si₃N₄ crystal was amorphized, and the N atoms escaped as a result of atomic H and the high temperature. At the same time, C atoms diffused into the SiN_x and formed C–Si bonds (49.7% of the total C bonds) by replacing N–Si and Si–Si, thus increasing the direct nucleation density of the diamond grains. The diamond thin film grew rapidly and uniformly, with a grain size of approximately 2 μm in mixed orientation, and the stress of the 2-inch SiC-on-diamond wafer was extremely low (to ～0.1–0.2 GPa). In comparison, partially connected diamond grains (>10 μm) on the bare SiC in the preferential (110) orientation resulted in a film with twin-grain features and significant stress, which was associated with the hexagonal lattice interface of 4H–SiC. These results are considered the material and surface/interface bases for actively controlling wafer fabrication and enhancing the heat dissipation of SiC and GaN/SiC electronics.     

纳米氮化硅/三元乙丙橡胶复合材料的制备与性能

用甲基丙烯酸锌原位聚合改性纳米氮化硅,再将改性纳米氮化硅填充到三元乙丙橡胶中以制备纳米橡胶复合材料,研究了复合材料的基本力学性能、耐热老化性能、耐油性能和耐磨性能等。结果表明,添加改性的纳米氮化硅在一定程度上提高了三元乙丙橡胶的撕裂强度、扯断伸长率和拉伸强度,邵尔A硬度也小幅上升。当改性纳米氮化硅的添加量为1.0份(质量)时,纳米氮化硅/三元乙丙橡胶复合材料的耐热老化性能和耐油性能有一定程度的提高,其综合性能也达到最佳。用甲基丙烯酸锌原位聚合改性可以改善纳米氮化硅与三元乙丙橡胶基质间的界面作用,提高其在三元乙丙橡胶中的分散效果。