Effect of the graphitization level of the free carbon on the temperature sensitivity of silicon carbonitride-based pressure sensors

Polymer-derived ceramics (PDCs) have recently attracted an increasing attention because of their applications for wireless passive pressure sensors in the harsh environment. However, due to the effect of temperature on the frequency of PDC-based wireless passive pressure sensors, it is not beneficial to accurate measurement of pressure. In this paper, a dense polymer-derived silicon carbonitride (SiCN) ceramic was prepared by precursor infiltration and pyrolysis (PIP) technique to reduce the temperature sensitivity of PDC–SiCN-based pressure sensor. The open porosity and density of SiCN ceramics varied from 13.34% and 1.89 g/cm³ without PIP process to 3.24% and 2.09 g/cm³ after three PIP cycles, respectively. Raman spectroscopy revealed that the level of graphitization of free carbon in dense SiCN ceramics is higher than that in porous SiCN ceramics, which would lead to an increase in the conductivity of dense SiCN ceramics. After three PIP cycles, the conductivity increased by almost two orders of magnitude from 3.01E − 10 to 1.28E − 08 S/cm. In addition, SiCN ceramic discs after PIP cycles and without PIP were applied to wireless passive pressure sensor based on resonator, which were tested at high temperature, respectively. Results confirmed that the temperature sensitivity of PDC–SiCN-based pressure sensor decreased from 220.5 to 50.8 kHz/°C by PIP process.     

Deposition and characterization of AZO thin films on flexible glass substrates using DC magnetron sputtering technique

Al-doped zinc oxide (AZO) thin films were deposited onto flexible ultra-thin glass substrates by using a direct current (DC) magnetron sputtering process. The effects of sputtering power, working pressure and substrate temperature on the morphology and optoelectronic performances of AZO films were investigated. The optimal sputtering power, working pressure and substrate temperature for AZO film were determined to be 100 W, 0.9 Pa and 150 ℃, respectively. Further increasing or decreasing the sputtering power, working pressure and substrate temperature degrades the quality of AZO films. XRD patterns show all as-sputtered AZO thin films are preferred to grow along <0002> direction. Moreover, the largest grain size, which depicts the best microstructure of AZO films, matches with the smallest stress value. It can be seen from SEM images that the surface is smooth and dense. The smallest value of the resistivity is 1.784×10⁻³ Ω cm and the average transmittance of all AZO films in the visible range is about 80%. The X-ray photoelectron spectroscopy spectra show that the amount of Al element in the AZO film is very small.     

Influence of argon gas pressure and target power on magnetron plasma parameters

The use of thin film sensors for measuring pressure and temperature distribution in tribological contacts was limited to hydrodynamic and elasto-hydrodynic contacts. Under mixed lubrication conditions the sensors regularly failed in the past. Therefore a new sensor generation is to be developed, which withstands the conditions of boundary friction within certain limits. These are based on electrically isolating DLC thin films (diamond-like carbon) as protecting and insulating coatings, between which the sensors are embedded. DLC thin films were deposited by r.f. magnetron sputtering of a graphite target (75 mm in diameter) in a pure argon discharge at low substrate temperatures (60–150 °C). For optimization of film constitution and properties, the target power was changed in the range of 50 W and 500 W and the argon gas pressure between 0.4 Pa and 0.7 Pa. The film characteristics were studied and related to plasma parameters and particle fluxes onto substrate and target during deposition, including ion saturation current density, electron saturation current density, plasma density, electron temperature und plasma potential. These plasma parameters were systematically analyzed in dependence of target power and gas pressure by using electrical double probes.     

Gallium oxide films deposition by RF magnetron sputtering; a detailed analysis on the effects of deposition pressure and sputtering power and annealing

In this study, gallium oxide (Ga₂O₃) thin films were deposited on sapphire and n-Si substrates using Ga₂O₃ target by radio frequency magnetron sputtering (RFMS) at substrate temperature of 300 °C at variable RF power and deposition pressure. The effects of deposition pressure and growth power on crystalline structure, morphology, transmittance, refractive index and band gap energy were investigated in detail. X-ray diffraction results showed that amorphous phase was observed in all the as-deposited thin films except for the thin films grown at low growth pressure. All the films showed conversion to poly-crystal β-Ga₂O₃ phase after annealing process. When the deposition pressure increased from 7.5 mTorr to 12.20 mTorr, change in the 2D growth mode to 3D columnar growth mode was observed from the SEM images. Annealing clearly showed formation of larger grains for all the thin films. Lower transmission values were observed as the growth pressure increases. Annealing caused to obtain similar transmittance values for the thin films grown at different pressures. It was found that a red shift observed in the absorption edges and the energy band gap values decrease with increasing growth pressure. For as-deposited and annealing films, increasing sputtering power resulted in the increase refractive index.     

Luminescence properties of terbium-doped SiCN thin films by rf magnetron reactive sputtering

Terbium-doped SiCN (SiCN:Tb) thin films were deposited by rf magnetron reactive sputtering at 800 °C. The as-prepared samples were characterized by XRD, FTIR, and XPS. The results showed that SiCN:Tb films mainly contained both SiC and Si₃N₄ nano-compositions with complicated chemical bond networks. Photoluminescence measurements indicated that the undoped SiCN films exhibited a blue-green light emission, while SiCN:Tb films emitted a strong green one. The SiC nanocrystallites formed in the undoped SiCN films might be responsible for the blue-green light emission, while the formed quaternary Si-C-Tb-O compositions in the doped samples could account for the strong green PL behaviors.     

Highly conducting and transparent antimony doped tin oxide thin films: the role of sputtering power density

Sb doped SnO₂ thin films were deposited on quartz substrates by magnetron sputtering at 600 °C and the effects of sputtering power density on the preferential orientation, structural, surface morphological, optical and electrical properties had been studied. The XRD analyses confirm the formation of cassiterite tetragonal structure and the presence of preferential orientation in (2 1 1) direction for tin oxygen thin films. The dislocation density analyses reveal that the generated defects can be suppressed by the appropriate sputtering power density in the SnO₂ lattice. The studies of surface morphologies show that grain sizes and surface roughness are remarkably affected by the sputtering power density. The resistivity of Sb doped SnO₂ thin films gradually decreases as increasing the sputtering power density, reaches a minimum value of 8.23×10⁻⁴ Ω cm at 7.65/cm² and starts increasing thereafter. The possible mechanisms for the change in resistivity are proposed. The average transmittances are more than 83% in the visible region (380–780 nm) for all the thin films, the optical band gaps are above 4.1 eV. And the mechanisms of the variation of optical properties at different sputtering power densities are addressed.     

Temperature dependent piezoresistive effect of multi-walled carbon nanotube films

The temperature dependence of piezoresistive effect on multi-walled carbon nanotube (MWNT) films is investigated. The gauge factor for pristine MWNT films and chemically treated MWNT films at 500 microstrain was found to be 46 and 75, respectively, at room temperature, but increased rapidly with temperature, exceeding that of polycrystalline silicon (30) at 35 °C. These findings suggest that the performance of carbon nanotube-based sensors may be significantly superior to that of polycrystalline silicon.     

Effects of power and temperature on the structural,anti-icing,wettability, and optical properties of zinc oxide thin films

Zinc oxide semiconductors have received significant research attention over the past decade owing to their diverse applications. In this paper, we report the development and characterisation of ZnO thin films prepared by radio-frequency (RF) magnetron sputtering. The optical, anti-icing, wettability, and structural properties of the films were investigated at various sputtering power levels and temperatures. With an increase in the power from 175 to 250 W, the ZnO thin films showed fine (002) structures. X-ray diffraction analysis of the coated thin films revealed a considerable increase in the (002) peak intensity along the c-axis with increasing power and temperature. Increasing the sputtering power from 175 to 250 W and the deposition temperature from 150 to 300 °C led to an increase in the average size of the grains from 10.548 to 13.151 nm and from 9.97 to 13.151 nm, respectively. The water contact angle possibly depends on the RF power and temperature employed for material deposition. Within the 350–800 nm range, the prepared films achieved optical transmissions of 92%–88%, refractive indices of 1.52–1.50, and band gaps of 3.28–3.24 eV. The anti-icing properties were also improved by adjusting the sputtering power and temperature during material deposition.     

Enhancement of thermoelectric performance of N-type Bi2Te3 based thin films via in situ annealing during magnetron sputtering

In this work, n-type Bi₂Te₃ based thin films were prepared in 300 °C via DC magnetron sputtering, and influences of sputtering power and annealing time on thermoelectric properties of films were investigated. The raise of sputtering power brings about the improvement of deposited rate and enhancement of grain size. Taking the consideration that the large-sized grains are to phonon scattering, we determine the medial power of 30 W as the basic technical parameters for the purpose of further optimizing performance through an in situ annealing process. Subsequently, thin-film treated by in situ annealing process acts out an obvious reduction in electrical conductivity attributed to the decrease in carrier concentration. Especially, the film annealed for 40 min shows an enhancement in the Seebeck coefficient and leads to a maximum power factor 0.82 m W m⁻¹ K⁻² at 543 K.     

Sandwich-structured ZnO-MnO2-ZnO thin film varistors prepared via magnetron sputtering

ZnO varistors are widely used to protect electronic circuits form transient voltages. However, it is difficult to prepare varistors with voltage less than 10 V using ZnO ceramics. Here we prepared a ZnO-MnO₂-ZnO (ZMZ) sandwich thin film via magnetron sputtering and subsequent annealing at 200-500 °C. With the increase of annealing temperature, the manganese oxide sandwich layer reacts with the upper and lower ZnO layer and becomes thinner. After annealed at 500 °C, because of ZnO grain growth, the upper and lower ZnO layers joined together. The electrical properties of ZMZ films annealed at 400 °C show strong nonlinear I-V characteristics. A ZMZ low voltage thin film varistor with planar boundary potential barrier was obtained whose nonlinear coefficient α and varistor voltage V1 mA are about 30 and 6.0 V, respectively. The stable and excellent nonlinear characteristics make it a promising candidate for overvoltage protection in low operating voltage circuits.     

Influence of radio frequency magnetron sputtering parameters on the structure and performance of SiC films

Amorphous SiC films fabricated by Radio frequency (RF) magnetron sputtering have been widely used due to their excellent properties including high strength, good hardness and outstanding abrasion resistance. However, most researches set a lower target-substrate distance, which limits its large-scale coating for practical industrial application. In this work, the distance between the target and substrate was enlarged to 120 mm, and the effective coating area was about four to ten times than other researches. Furthermore, the effects of sputtering power, deposition pressure, substrate temperature and bias voltage on the structure and performance of SiC films were also investigated. Finally, SiC films with high elasticity modulus (310.8 GPa) and hardness (35.6 GPa) are obtained by RF magnetron sputtering.     

Room temperature preparation of high performance AZO films by MF sputtering

Aluminum-doped zinc oxide (AZO) thin films have been deposited by MF magnetron sputtering from a ceramic oxide target without heating the substrates. This study has investigated effects of sputtering power on the structural, electrical and optical properties of the AZO films. The films delivered a hexagonal wurtzite structure with (002) preferential orientation and uniform surface morphology with 27–33 nm grain size. The results indicate that residual stress and grain size of the AZO films are dependent on sputtering power. The minimum resistivity of 7.56×10^?4 Ω cm combined with high transmittance of 83% were obtained at deposited power of 1600 W. The films delivered the advantages of a high deposition rate at low substrate temperature and should be suitable for the fabrication of low-cost transparent conductive oxide layer.     

Development of robust YSZ thin-film electrolyte by RF sputtering and anode support design for stable IT-SOFC

Thin-film solid oxide fuel cells (TF-SOFCs) have attracted attention as a strategy for lowering the operating temperature of SOFCs. However, the porous and rough surface of the SOFC support and the shadowing effect have hindered the construction of pinhole-free thin-film electrolytes during sputtering. In this study, we report the deposition of a gas-tight YSZ thin-film electrolyte (approximately 0.8 μm) by RF sputtering on a Ni-YSZ anode support. To utilize a sputtered thin film as an electrolyte, we examined the relationship between the deposition pressure and thin-film properties and determined the optimal deposition conditions. By designing the anode functional layer (AFL) and annealing, a thin-film electrolyte is successfully deposited on the porous Ni-YSZ support without cracks and pinholes. The resulting thin-film electrolyte cell achieves a high open-circuit voltage (OCV) of approximately 1.09 V and a maximum power density of 0.446 W/cm² at 600 °C, which implies high ionic conductivity and gas tightness. Moreover, the single cell exhibited exceptional long-term stability (140 h) despite the extremely thin and vacuum-deposited electrolyte components. This study provides guidelines for the practical application of thin films as electrolytes to lower the operating temperature of SOFCs.     

Characterization of Cu(In,Ga)Se2 thin films prepared by RF magnetron sputtering using a single target without selenization

Cu(In_1?xGa_x)Se₂ (CIGS) thin films were prepared using a single quaternary target by RF magnetron sputtering. The effects of deposition parameters on the structural, compositional and electrical properties of the films were examined in order to develop the deposition process without post-deposition selenization. From X-ray diffraction analysis, as the substrate temperature and Ar pressure increased and RF power decreased, the crystallinity of the films improved. The scanning electron microscopy revealed that the grains became uniform and circular shape with columnar structure with increasing the substrate temperature and Ar pressure, and decreasing the RF power. The carrier concentration of CIGS films deposited at the substrate temperature of 500 °C was 2.1 × 10¹⁷ cm^?3 and the resistivity was 27 Ω cm. At the substrate temperature above 500 °C, In and Se contents in CIGS films decreased due to the evaporation and it led to the deterioration of crystallinity. It was confirmed that CIGS thin films deposited at optimal condition had similar atomic ratio to the target value even without post-deposition selenization process.     

Thin-film temperature sensor made from particle-filled polymer-derived ceramics pyrolyzed in vacuum

Thin-film sensors have wide applications in the fields of high-temperature measurement, such as in the hot section of aero engines. Polymer-derived ceramics (PDCs) are diversified, ease to shape, and resistant to thermal shock. However, they are seldom used as sensitive parts of thin-film sensors due to the oxidation of PDC thin films. To solve this challenging problem, pyrolysis of PDC thin films in vacuum is proposed in this work, and the anti-oxidation performances are verified in a high-temperature sensor based on such a PDC thin film. The temperature measurement experiment shows that the PDC thin-film temperature sensor with thickness of about 10 µm pyrolyzed in vacuum can measure temperature from room temperature to 800 ℃, which provides a feasible way for fabrication of high-temperature PDC thin-film sensors such as heat flux sensors and strain sensors.     

Engineering of morphological,optical, structural,photocatalytic and catalytic properties of nanostructured CuO thin films fabricated by reactive DC magnetron sputtering

Nanostructured thin films of CuO were deposited on silica glass substrates using reactive DC magnetron sputtering technique. Microstructural, morphological, optical, catalytic and photocatalytic properties of the prepared CuO thin films were examined using FESEM, AFM, Rutherford backscattering spectrometry, XRD, XPS, UV–Vis absorption and PL spectroscopy. FESEM showed nanostructures in the thin films, which were confirmed to be of monoclinic CuO by XRD analysis. Substrate temperature variation (40 °C, 100 °C and 300 °C) was found to significantly alter the optical, morphological, photocatalytic and structural properties of the CuO nanostructured thin film coatings. FESEM and AFM analyses showed decrease in size of nanostructures and surface roughness increase with increase in substrate temperature. Increase in UV–Vis absorbance and PL intensity of CuO thin films with decrease in crystallite size were noticed as the substrate temperature was increased. The prepared nanostructured CuO thin films exhibited highly enhanced photocatalytic activities and degraded dyes (MB and MO) in water in just 40 min under solar exposure and catalytic transformation of 4-nitrophenol (4-NP) took place in just 15 min. The developed CuO nanostructured thin film coatings are very promising for large scale, practical and advanced catalytic reduction of toxic 4-NP and photocatalytic applications in solar driven water purification.     

A study of the oxidation behavior of CrN and CrZrN ceramic thin films prepared in a magnetron sputtering system

CrN and CrZrN ceramic thin films were produced by a planar type reactive sputtering system on glass and stainless steel substrates. We investigated oxidation resistance of CrN and CrZrN ceramic thin films with different Zr contents. The structure of the films at different thermal-annealing temperatures was investigated by X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). The mechanical properties of the films at different thermal-annealing temperatures were measured by nano-indentation. The results of this study showed that the addition of few amount of Zr (0.4 at%), can improve thermal stability of CrZrN ceramic thin film and increase the oxidation temperature of the film from 600 °C to 800 °C. The relatively good oxidation resistance (800 °C) and high hardness of the film with the lowest Zr content, indicates that this film is a good candidate for high temperature applications.     

Structure–property–processing relationships of single-wall carbon nanotube thin film piezoresistive sensors

In an investigation of structure–property–processing relationships for SWCNT thin film piezoresistive sensors, the gauge factor of the sensors for a small tensile deformation (less than 2% strain) was found to be close to unity and showed negligible dependence on the film thickness and SWCNT bundle length (L) and diameter (d). However, for a large tensile deformation (20–30% strain), the film thickness and the microstructure of SWCNTs had a compounding effect on the piezoresistive behavior. A gauge factor of ∼5 was obtained for the sensors fabricated with SWCNT bundles of short length and thin diameter (L = 549 nm and d = 3.7 nm) with thicker films. Furthermore, the gauge factor of the sensors was found inversely proportional to the excluded volume V_ex of SWCNT bundles (V_ex ∝ 1/L² d).     

Piezoresistivity of n-type conductive ultrananocrystalline diamond

Recent developments of a piezoresistive sensor prototype based on n-type conductive ultrananocrystalline diamond (UNCD) are presented. Samples were deposited using hot filament chemical vapor deposition (HFCVD) technique, with a gas mixture of H₂, CH₄ and NH₃, and were structured using multiple photolithographic and etching processes. Under controlled deposition parameters, UNCD thin films with n-type electrical conductivity at room temperature (5 × 10^− 3 – 5 × 10¹ S/cm) could be grown. Respective piezoresistive response of such films was analyzed and the gauge factor was evaluated in both transverse and longitudinal arrangements, also as a function of temperature from 25 °C up to 300 °C. Moreover, the gauge factor of piezoresistors with various sheet resistance values and test structure geometries was evaluated. The highest measured gauge factor was 9.54 ± 0.32 at room temperature for a longitudinally arranged piezoresistor with a sheet resistance of about 30 kΩ/square. This gauge factor is well comparable to that of p-type boron doped diamond; however, with a much better temperature independency at elevated temperatures compared to the boron-doped diamond and silicon. To our best knowledge, this is the first report on piezoresistive characteristics of n-type UNCD films.     

CIGS absorbing layers prepared by RF magnetron sputtering from a single quaternary target

Cu(In_1−xGa_x)Se₂ (CIGS) thin films were prepared by RF magnetron sputtering from a single quaternary target at multiple processing parameters. The structural, compositional, and electrical properties of the as-deposited films were systematically investigated by XRD, Raman, SEM, and Hall effects analysis. The results demonstrate that by adjusting the processing parameters, the CIGS thin films with a preferential orientation along the (112) direction which exhibited single chalcopyrite phase were obtained. The films deposited at relatively higher substrate temperature, sputtering power, and Ar pressure exhibited favorable stoichiometric ratio (Cu/(In+Ga):0.8–0.9 and Ga/(In+Ga):0.25–0.36) with grain size of about 1–1.5 µm, and desirable electrical properties with p-type carrier concentration of 10¹⁶−10¹⁷ cm⁻³ and carrier mobility of 10–60 cm²/Vs. The CIGS layers are expected to fabricate high efficiency thin film solar cells.