Electrical conductivity characteristics of Sr substituted layered perovskite cathode (SmBa0.5Sr0.5Co2O5+d) for intermediate temperature-operating solid oxide fuel cell

The high electrical conductivity of the cathode is one of the important factors for reducing the polarization resistance. For this reason, we here report the electrical conductivity characteristics of SmBa_0.5Sr_0.5Co₂O_5+δ (SBSCO) as a function of sintering temperature and current ranges. Calcined SBSCO samples were sintered at 1000, 1050, 1100, and 1150 °C. The current ranges applied in the process of measuring electrical conductivity were subdivided as 1.0A [0.05step], 0.5A [0.025step], and 0.1A [0.005step]. It was found that the sintering temperature affected the electrical conductivity in the following way: when the sintering temperature increases, an increase in the observed electrical conductivity is the result. However, as the current range decreases, it was found that the electrical conductivity would increase. The maximum and minimum conductivities of SBSCO sintered at 1150 °C were 2263S?cm^?1 at 50 °C and 382 S?cm^?1 at 900 °C with metallic behavior in air condition. When a current of 0.1A was applied to SBSCO sintered at 1150 °C, the electrical conductivity at the 800 °C was 1377.15 S/cm. It can be determined that the increase in the internal charge carrier flux of the SBSCO is associated with the decrease in the overall electrical conductivity of the Co-based metallic electrical conductivity. These results show that the high sintering temperature and low current range enable higher electrical conductivity at high operating temperature.     

Densification and electrical conductivity of Fe and Mn-doped Ce0.83Sm0.085Nd0.085O2-& by solid-liquid method

Fe and Mn-doped Ce_0.83Sm_0.085Nd_0.085O_2-& (SNDC) powders are successfully synthesized by the simple and efficient solid-liquid method. The crystallinity and morphologies of the powders were characterized by X-ray diffractometer, Raman spectrum, and scanning electron microscopy. The effect of doping on sintering behavior, grain interior, and grain boundary conductivity are studied. The doping of Fe can effectively reduce the sintering temperature from 1450^oC to 1250°C and keep the same density. Compared with SNDC, 1 mol% Fe-doped SNDC (Fe-SNDC) sintered at 1250°C shows a higher total conductivity of 2.13 × 10⁻² S·cm^-1 at 650°C. Also, it exhibits that doping of Fe can increase the conductivity of grain interior and grain boundary simultaneously. The present work shows that the Fe-SNDC synthesized by solid-liquid method can be used as a potential electrolyte for intermediate-temperature solid oxide fuel cells.     

Effect of carbon content on electrical,thermal, and mechanical properties of porous SiC ceramics with B4C and C additives

The electrical, thermal, and mechanical properties of porous SiC ceramics with B₄C-C additives were investigated as functions of C content and sintering temperature. The electrical resistivity of porous SiC ceramics decreased with increases in C content and sintering temperature. A minimal electrical resistivity of 4.6 × 10^?2 Ω·cm was obtained in porous SiC ceramics with 1 wt% B₄C and 10 wt% C. The thermal conductivity and flexural strength increased with increasing sintering temperature and showed maxima at 4 wt% C addition when sintered at 2000 °C and 2100 °C. The thermal conductivity and flexural strength of porous SiC ceramics can be tuned independently from the porosity by controlling C content and sintering temperature. Typical electrical resistivity, thermal conductivity, and flexural strength of porous SiC ceramics with 1 wt% B₄C-4 wt% C sintered at 2100 °C were 1.3 × 10^?1 Ω·cm, 76.0 W/(m·K), and 110.3 MPa, respectively.     

Microstructures and superconducting properties of MgB2 bulk samples processed by ultra-high pressure-assisted sintering

Nanocrystalline MgB₂ bulk superconductors have been fabricated by ultra-high pressure-assisted sintering (～ 5 GPa) over a range of temperatures (700 °C-1100 °C). Phase evolution and morphology, grain size and lattice defects were systematically investigated. The superconducting performance was measured using magnetization methods and linked to the corresponding microstructural features. A sample processed at 900 °C and 5 GPa achieved a J_c value of 4.5 × 10⁷ A/m² at 4.2 K, 6 T, 30 times and more than 100 times higher than those prepared at 800 and 1100 °C respectively, under similar pressures. Its superior superconducting properties arise from the combination of limited grain growth, retained crystal defects and complete densification achieved in a rapid process by the application of ultra-high pressure. This study reveals the importance of microstructure in controlling the superconducting behavior in sintered MgB₂, especially the sample homogeneity that can affect the length scales over which the supercurrents flow.     

Thermal stability of plasma-sprayed La2Ce2O7/YSZ composite coating

A composite coating composed of La₂Ce₂O₂ (LCO) and yttria-stabilized zirconia (YSZ) in a weight ratio of 1:1 was deposited by the plasma spraying using a blended YSZ and LCO powders, and the stability of the LCO/YSZ interface exposed to a high temperature was investigated. The LCO/YSZ deposits were exposed at 1300 °C for different durations. The microstructure evolution at the LCO/YSZ interface was investigated by quasi-in-situ scanning electron microscopy assisted by X-ray energy-dispersive spectrum analyses and X-ray diffraction measurements. At an exposure temperature of 1300 °C, the grain morphology of LCO splats in contact with YSZ splats changed from columnar grains to quasi-axial grains with interface healing, and some grains tended to disappear during the thermal exposure. The results indicate that the phases in LCO–YSZ composite coating are not stable at 1300 °C. The element La in the LCO splat diffused towards the adjacent YSZ splat during the exposure, generating the reaction product layers composed of La₂Zr₂O₇ between the LCO and YSZ splats. After exposed for 200 h, the composite coating consisted of a mixture of mainly La₂Zr₂O₇ and CeO₂ and a minor amount of YSZ, accounting for the unusual decrease in the thermal conductivity at the late stage of exposure.     

Influences of Bi0.75Y0.25O1.5 addition on the microstructure and ionic conductivity of Ce0.8Y0.2O1.9 ceramics

A second phase of Y₂O₃-stabilized Bi₂O₃ (Bi_0.75Y_0.25O_1.5,YSB) is introduced into Y₂O₃-doped CeO₂ (Ce_0.8Y_0.2O_1.9,YDC) as a sintering additive and the composite ceramics of YDC-xYSB (x = 0, 5, 10, 20, 30, 40 wt%) are prepared through sintering at 1100°C for 6 h in air atmosphere. The YDC-xYSB ceramics are composed of both YDC and YSB with cubic fluorite structure, and no other impurity phases are detected in XRD patterns. The relative density of YDC-xYSB rises firstly for x ≤5 wt%, and then it declines with YSB addition from 5 to 40 wt%. The average grain size of YDC decreases from 270 nm to 85.7 nm with YSB addition from 0 to 40 wt%. The YSB phase segregates at the grain boundaries of YDC based on the TEM analysis result. The ionic conductivity of YDC-xYSB (x ≥5 wt%) is lower than that of YDC in the test temperature of 200°C–500°C, while it gradually exceeds that of YDC in 500°C–750°C. At 750°C, the conductivity of YDC-30%YSB (6.22 × 10⁻² S/cm) is 1.35 times higher than that of YDC (4.6 × 10⁻² S/cm). The YSB addition can improve the ionic conductivity of YDC in 500°C–750°C and decrease its sintering temperature.     

Increased electrical conductivity and the mechanism of samarium‐doped ceria/Al2O3 nanocomposite electrolyte

To further enhance the electrical conductivity of doped ceria, the samarium‐doped ceria (SDC)/Al₂O₃ nanocomposites were prepared through sintering the coprecipitated powders in 1100°C‐1300°C. The grain sizes of all composites are less than 100 nm and decrease with alumina addition. Besides the main phases of SDC and Al₂O₃, the SmAlO₃ can precipitate in the composites if sintered at higher temperatures or for longer dwell time. The deviations of SDC diffraction peak positions demonstrate the solid solution of alumina into SDC lattice. The total electrical conductivities of the composites increase with alumina content until 30% alumina is added. The SDC/30%Al₂O₃ presents the higher total conductivity than the pure SDC by about five times. Specifically, the grain interior conductivity generally decreases with the alumina addition while the grain‐boundary conductivity increases with that. The introduction of the conductive SDC/Al₂O₃ interface can contribute to the rise of total conductivity, yet the excessive alumina addition also blocks the oxygen ion conduction. The SmAlO₃ precipitation is detrimental to the ion conduction for it consumes part of alumina and leads to the decrement in Sm concentration of SDC grain. Appropriate alumina addition not only enhances the conductivity of SDC but also lowers the material cost.     

Microstructure and electrical properties of ZnO–Bi2O3-based varistor ceramics by different sintering processes

The effect of sintering processes, such as open sintering, sintering inside a closed crucible, and sintering within a powder bed, on the microstructure and V–I characteristics of ZnO–Bi₂O₃-based varistor ceramics was investigated at sintering temperatures in the range 1000–1200 °C. The results from the experiments showed that the microstructure and electrical properties of the samples varied according to the sintering method and temperature. Optimal values for the electrical characteristics of the varistor ceramics by different sintering processes were obtained when the sintering was conducted at 1100 °C. At the same sintering temperature, the different processes affected the properties differently. At 1000 °C, the samples sintered within a powdered bed showed better electrical properties than those subjected to the other two processes, while at 1100 or 1200 °C, the samples sintered in an open crucible exhibited the best electrical properties.     

Effect of Li2O content and sintering temperature on the grain growth and electrical properties of Gd-doped CeO2 ceramics

The sintering behavior and electrical properties of Gd-doped CeO₂ (GDC), with and without Li₂O as a sintering additive, were examined. With increasing Li₂O content, the grain growth of GDC was enhanced because of an increase in the duration for which a Li-rich liquid phase existed during sintering. The migration of Li ions led to an increase in the electrical conductivity of the Li-doped GDC. When the Li-doped GDC was sintered at a high temperature of 1400 °C, the Li evaporated, resulting in a decrease in the electrical conductivity.     

Stability and electrical properties of MoSi2‐ and WSi2‐oxide electroconductive composites

MoSi₂‐ and WSi₂‐based electroconductive ceramic composites were fabricated using 40‐80 vol% fine‐ and coarse‐Al₂O₃, and ZrO₂ particles (refractory oxides) after sintering in argon. Their chemical and thermal stability was tested between 1400°C‐1600°C for up to 48 hours. X‐ray diffraction analysis showed the formation of secondary 5‐3 metal silicide (Mo₅Si₃, W₅Si₃) and silica phases on the grain boundaries and surface. The fraction of the W₅Si₃ (11.4‐38.8 vol%) was significantly higher than that of the Mo₅Si₃ (3.3‐7.3 vol%) in the composites after annealing at 1400°C for 48 hours. The rates of grain growth in the composites (0.013‐0.023 μm/h) were highly decreased by a grain‐boundary pinning effect. This effect was relatively better with the addition of the coarse‐grained oxides due to their more homogeneous distribution throughout the microstructure. The 20–80 vol% MoSi₂‐Al₂O₃ (fine‐grained) composite exhibited an electrical conductivity of 8.8 S/cm at 900°C. At the 60 vol% silicide content, MoSi₂–Al₂O₃ (coarse‐grained) and WSi₂–Al₂O₃ (fine‐grained) showed higher electrical conductivity (126‐128 S/cm) at 900°C. The density, porosity level, particle distribution, intrinsic conductivity of silicide phase, particle size, and fraction of the secondary 5‐3 silicide phase highly influenced their electrical properties.     

Influence of processing conditions on the ionic conductivity of holmium zirconate (Ho2Zr2O7)

Nanopowders of holmium zirconate (Ho₂Zr₂O₇) synthesised through carbon neutral sol-gel method were pressed into pellets and individually sintered for 2 h in a single step sintering (SSS) process from 1100 °C to 1500 °C at 100 °C interval and in a two step sintering (TSS) process at (I) −1500 °C for 5 min followed by (II) - 1300 °C for 96 h. Relative density of each of the sintered pellet was determined using the Archimedes’ technique and the theoretical density was calculated from crystal structure data. Grain size was obtained from SEM micrographs using ImageJ. Pellets processed by TSS have been found to be denser (98 %) with less grain growth (1.29 μm) as compared to the pellets processed using SSS process. Ionic conductivity of Ho₂Zr₂O₇ pellets sintered by two different processes was measured using ac impedance spectroscopy technique over the temperature range of 350 °C–750 °C in the frequency range of 100 mHz–100 MHz for both heating and cooling cycles. The temperature dependence of bulk (2.67⨯10⁻³ Scm⁻¹) and grain boundary (2.50⨯10⁻³ Scm⁻¹) conductivities of Ho₂Zr₂O₇ prepared by TSS process are greater than those processed by SSS process suggesting the strong influence of processing conditions and grain size. Results of this study, indicates that the TSS is the preferable route for processing the holmium zirconate as it can be sintered to exceptionally high densities at lower temperature, exhibits less grain growth and enhanced ionic conductivity compared with the samples processed by SSS process. Hence, holmium zirconate can be considered as a promising new oxide ion conducting solid electrolyte for intermediate temperature SOFC applications between 350 °C and 750 °C temperature range.     

Sintering kinetics and properties of NiFe2O4-based ceramics inert anodes doped with TiN nanoparticles

Sintering kinetics of NiFe₂O₄-based ceramics inert anodes for aluminum electrolysis doped 7 wt% TiN nanoparticles were conducted to investigate densification and grain growth behaviors. The linear shrinkage increased gradually with the increasing sintering temperature between 1000 and 1450°C, whereas the linear shrinkage rate exhibited a broad peak. The maximum linear shrinkage rate was obtained at 1189.4°C, and the highest densification rate was achieved at the relative density of 75.20%. Based on the pressureless sintering kinetics window, the sintering process was divided into the initial stage, the intermediate stage, and the final stage. The grain growth exponent reduced with increased sintering temperature, whereas the grain growth activation energy decreased by increasing sintering temperature and shortening dwelling time. The grain growth was mainly controlled by atomic diffusion. NiFe₂O₄-based ceramics possessed high-temperature semiconductor essential characteristics. The electrical conductivity of NiFe₂O₄-based ceramics first increased and then decreased with increasing sintering temperature, reached their maximum value (960°C) of 33.45 S/cm under 1300°C, mainly attributed to the relatively dense and uniform microstructure. The thermal shock resistance of NiFe₂O₄-based ceramic was improved by a stronger grain boundary bonding strength and lower coefficient of linear thermal expansion.     

Low-temperature Pr3Si2C2-assisted liquid-phase sintering of SiC with improved thermal conductivity

A novel Pr₃Si₂C₂ additive was uniformly coated on SiC particles using a molten-salt method to fabricate a high-density SiC ceramics via liquid-phase spark plasma sintering at a relatively low temperature (1400°C). According to the calculated Pr–Si–C-phase diagram, the liquid phase was formed at ∼1217°C, which effectively improved the sintering rate of SiC by the solution–reprecipitation process. When the sintering temperature increased from 1400 to 1600°C, the thermal conductivity of SiC increased from 84 to 126 W/(m K), as a consequence of the grain growth. However, an increasing amount of the sintering additive increased the interfacial thermal resistance, resulting in a decrease of thermal conductivity of the materials. The highest thermal conductivity of 141 W/(m K) was obtained for the material having the largest SiC grains and an optimized amount of the additive at the grain boundaries and triple junctions. The proposed Pr₃Si₂C₂-assisted liquid-phase sintering of SiC can be potentially used for the fabrication of SiC-based ceramic composites, where a low sintering temperature would inhibit the grain growth of SiC fibers.     

Microstructure–conductivity relationship of Na3Zr2(SiO4)2(PO4) ceramics

The ionic conductivity of solid electrolytes is dependent on synthesis and processing conditions, ie, powder properties, shaping parameters, sintering time (t_s), and sintering temperature (T_s). In this study, Na₃Zr₂(SiO₄)₂(PO₄) was sintered at 1200 and 1250°C for 0-10 hours and its microstructure and electrical performance were investigated by means of scanning electron microscopy and impedance spectroscopy. After sintering under all conditions, the sodium super-ionic conductor-type structure was formed along with ZrO₂ as a secondary phase. The microstructure investigation revealed a bimodal particle size distribution and grain growth at both T_s. The density of samples increased from 60% at 1200°C for 0 hours to 93% at 1250°C for 10 hours. The ionic conductivity of the samples increased with t_s due to densification and grain growth, ranging from 0.13 to 0.71 mS/cm, respectively. The corresponding equivalent circuit fitting for the impedance spectra revealed that grain boundary resistance is the prime factor contributing to the changing conductivity after sintering. The activation energy of the bulk conductivity (E_a,bulk) remained almost constant (0.26 eV) whereas the activation energy of the total conductivity (E_a) exhibited a decreasing trend from 0.37 to 0.30 eV for the samples with t_s = 0 and 10 hours, respectively—both sintered at 1250°C. In this study, the control of the grain boundaries improved the electrical conductivity by a factor of 6.     

Sintering and conductivity of Sc-doped CaZrO3 with Fe2O3 as a sintering aid

This paper reports the effect of 0.1–0.5 wt% Fe₂O₃ addition on sintering and electrical properties of CaZr_0.95Sc_0.05O_3-δ ceramics synthesized by combustion method. Addition of the sintering aid was shown to enhance ceramic densification and grain coarsening at a reduced sintering temperature and a shorter holding time (1430 °C, 2 h). Effect of the sintering aid on electrical conductivity of the ceramics was investigated using impedance spectroscopy. The highest total conductivity was achieved for the composition with 0.5 wt% Fe₂O₃; it was about an order of magnitude higher than that of the composition without Fe₂O₃. The effect of Fe₂O₃ addition on the conductivity of the grain interior and grain boundaries has been discussed. It was concluded that ceramic densification, grain coarsening and formation of small amounts of calcium ferrite at the grain boundaries upon Fe₂O₃ addition were responsible for the conductivity enhancement.     

Sintering,mechanical, electrical and oxidation properties of ceramic intermetallic TiC–Ti3Al composites obtained from nano-TiC particles

The paper discusses the development of a new material system for interconnect application in Solid Oxide Fuel Cells (SOFC) based on TiC–Ti₃Al. Nano-sized TiC powders utilized in this research were synthesized using carbon coated TiO₂ precursors from a patented process. The pressureless sintering of TiC–Ti₃Al in a vacuum was applied at temperatures between 1100 °C and 1500 °C and content of Ti₃Al was varied in the range of 10–40 wt%. X-ray diffraction (XRD) and scanning electron microscope (SEM) were used for phase evaluation and sintering behavior. Relative density increased markedly with increasing sintering temperature because of grain growth and formation of the Ti₃AlC₂ secondary phase. Dense products (>95% TD) were prepared from nanosized TiC powders with 10 and 20 wt% Ti₃Al, but with about 8 to 10% porosity for 30 and 40 wt% Ti₃Al. The mechanical properties were determined from Vickers hardness and fracture toughness calculations. Vickers hardness decreased and fracture toughness increased with increasing Ti₃Al content. The electrical conductivity and oxidation behavior of TiC–Ti₃Al composites were investigated to evaluate the feasibility for SOFC interconnect application. The electrical conductivity measurements in the air at 800 °C for 100 h were made using the Kelvin 4-wire method.     

Electrically conductive SiC ceramics processed by pressureless sintering

Polycrystalline SiC ceramics with 10 vol% Y₂O₃-AlN additives were sintered without any applied pressure at temperatures of 1900-2050°C in nitrogen. The electrical resistivity of the resulting SiC ceramics decreased from 6.5 × 10¹ to 1.9 × 10⁻² Ω·cm as the sintering temperature increased from 1900 to 2050°C. The average grain size increased from 0.68 to 2.34 μm with increase in sintering temperature. A decrease in the electrical resistivity with increasing sintering temperature was attributed to the grain-growth-induced N-doping in the SiC grains, which is supported by the enhanced carrier density. The electrical conductivity of the SiC ceramic sintered at 2050°C was ~53 Ω⁻¹·cm⁻¹ at room temperature. This ceramic achieved the highest electrical conductivity among pressureless liquid-phase sintered SiC ceramics.     

Microstructure and Li‐Ion Conductivity of Hot‐Pressed Cubic Li7La3Zr2O12

The effect of hot‐pressing temperature on the microstructure and Li‐ion transport of Al‐doped, cubic Li₇La₃Zr₂O₁₂ (LLZO) was investigated. At fixed pressure (62 MPa), the relative density was 86%, 97%, and 99% when hot‐pressing at 900°C, 1000°C, and 1100°C, respectively. Electrochemical impedance spectroscopy showed that the percent grain‐boundary resistance decreased with increasing hot‐pressing temperature. Hot pressing at 1100°C resulted in a total conductivity of 0.37 mS/cm at room temperature where the grain boundaries contributed to 8% of the total resistance; one of the lowest grain‐boundary resistances reported. We believe hot pressing is an appealing technique to minimize grain‐boundary resistance and enable correlations between LLZO composition and bulk ionic conductivity.     

Reactive FAST/SPS sintering of strontium titanate as a tool for grain boundary engineering

A high-pressure FAST/Spark Plasma Sintering method was used to produce dense SrTiO₃ ceramics at temperatures of 1050 °C, more than 250 °C below typical sintering temperatures. Combining SPS with solid-state reactive sintering further improves densification. The process resulted in fine-grained microstructures with grain sizes of ∼300 nm. STEM-EDS was utilized for analyzing cationic segregation at grain boundaries, revealing no cationic segregation at the GBs after SPS. Electrochemical impedance spectroscopy indicates the presence of a space charge layer. Space charge thicknesses were calculated according to the plate capacitor equation and the Mott-Schottky model. They fit the expected size range, yet the corresponding space charge potentials are lower than typical values of conventionally processed SrTiO₃. The low space charge potential was associated to low cationic GB segregation after SPS and likely results in better grain boundary conductivity. The findings offer a path to tailor grain boundary segregation and conductivity in perovskite ceramics.     

Physical properties of the (K0·44Na0·52Li0.04)0.97La0·01Nb0·9Ta0·1O3 ceramic with coexisting tetragonal and orthorhombic monocrystalline grains at room temperature

A structural and physical properties study on ferroelectric (K_0·44Na_0·52Li_0.04)_0.97La_0·01Nb_0·9Ta_0·1O₃ ceramics with monocrystalline grains of orthorhombic (O) and tetragonal (T) perovskite phases coexisting at room temperature (RT) is presented. Different sintering temperatures were evaluated. XRD analysis demonstrates high crystalline quality of both phases with volume fractions depending of the sintering temperature. SEM shows grain facets and morphologies of both phases in all samples. Raman analysis confirms the dopant incorporation and the coexistence of both phases. The contributions of each phase in the dielectric response are deconvoluted using the frequency-temperature dielectric analysis. The orthorhombic-to-tetragonal (T_O-T) and tetragonal-to-cubic (T_T-C) phase transition temperatures shift ~100 °C below those reported for pure-KNN in all samples, as consequence of the Li, La, and Ta doping combination. Li doping promotes T-phase grain growth and decreases T_O-T below RT. La incorporation promotes the O-phase grain growth and decreases T_O-T and T_T-C. The optimal sintering temperature is 1180 °C with 50-50 volume fractions of T-O phases. Piezoresponse studies show a complex 180°-domain structure.