磁控溅射镀膜中工作气压对沉积速率的影响

沉积速率是磁控溅射镀膜技术中的一项重要指标,它由许多因素决定.为了定性地了解沉积速率与工作气压之间的关系,通过实验测定了不同工作气压下的沉积速率,发现存在一个最大值,并对应有一个最佳工作气压.运用气体放电理论对这一现象进行了分析.这个结论为提高薄膜制备效率指明了方向,并为进一步建立沉积速率与工作气压之间的数学模型打下了基础.     

工作参数对平面磁控溅射系统沉积速率的影响

为了分析磁场、阴极电压、气压和靶基板间距等工作参数对沉积速率的影响,本文对磁控放电过程和沉积过程进行了讨论,并着重对沉积速率计算的无碰撞模型和碰撞模型进行了研究.靶功率是影响沉积速率的关键因素,通过对磁控放电特性分析发现,随着磁场、电压的增大,等离子体阻抗降低,放电电流和靶功率增大,随着气压的增大,放电电流和靶功率先增大后减小;采用碰撞模型对沉积速率进行模拟发现,在靶功率恒定的情况下,沉积速率随着气压和靶基板间距的增大而减小.因此,在气压和靶基板间距保持恒定的情况下,沉积速率会随着磁场和电压的增大而增大;而在磁场、电压和靶基板间距保持恒定的情况下,沉积速率随着气压的增大,先增大后减小.上述结论对于薄膜制备效率和质量的提高具有一定的理论指导意义.     

SmCo薄膜磁控溅射沉积速率的影响因素

SmCo薄膜的厚度是影响其磁性能的重要因素,而沉积速率是控制薄膜厚度的关键。采用直流磁控溅射工艺制备SmCo薄膜,设计正交实验并通过数理统计方法研究了溅射工艺参数中溅射功率、靶基距及氩气压强对SmCo薄膜沉积速率的影响,并同时考察了不同厚度SmCo薄膜的磁性能变化规律。研究结果表明:溅射功率与靶基距都对薄膜的沉积速率有较大的影响,其中在溅射功率为40~120W范围内时,随着溅射功率的增大SmCo薄膜的沉积速率逐渐提高;在靶基距为50~70mm的范围内,SmCo薄膜的沉积速率随靶基距的增大而逐渐降低;而在氩气压强处于0.7~1.5Pa范围内时,SmCo薄膜的沉积速率几乎不随氩气压强的改变而变化。在溅射功率为80W、靶基距为60mm及氩气压强为1.1Pa的工艺条件下,SmCo薄膜的沉积速率具有很好的稳定性。随膜厚从0.59μm增加到0.90μm,SmCo薄膜的矫顽力由23.4kA/m降低到8.2kA/m。     

工艺参数对直流反应磁控溅射ZnO:Al薄膜沉积速率的影响

实验以合金靶材在玻璃衬底上运用直流反应磁控溅射法制备了ZAO(ZnO:Al)透明导电薄膜样品.研究了O2气流量,衬底温度,以及反应气压和溅射功率等工艺参数对ZAO薄膜沉积速率的影响规律.结果表明:沉积速率随O2气流量的增加显著降低,靶面溅射模式由金属模式转变为氧化物模式,而且这种转变趋势在改变其他参数时依然明显;沉积速率随溅射功率的增大几乎成线性增加,但随衬底温度的变化并不大;在反应气压增大的情况下,沉积速率不断上升,达到最大值后,又随气压的增大不断下降.     

TiO_2磁控溅射工艺参数对薄膜沉积速率的影响

为了经济、有效、准确地在线测量光学薄膜厚度,采用射频磁控反应溅射法在玻璃衬底上制备TiO2薄膜。用自制的简易监测系统对TiO2薄膜在生长过程中的沉积速率进行了即时测量,研究了射频功率、气体流量、工作气压等工艺参数对TiO2薄膜沉积速率的影响规律。结果表明:沉积速率监测系统对膜厚变化反应灵敏,能够实时监测薄膜生长速率;溅射过程中,射频功率、氧氩流量比和工作气压对薄膜沉积速率有较大的影响,射频功率从120 W增加到240 W,薄膜沉积速率增加;氧气流量从1 mL/min增加到5 mL/min,薄膜沉积速率先逐渐增大后减小,存在一个临界点;工作气压从0.3 Pa增加到0.8 Pa,薄膜沉积速率缓慢增加,但临界点后迅速下降。     

沉积速率及相关工艺条件对直流反应磁控溅射制备TiO2薄膜性质的影响

在玻璃基板上用直流反应磁控溅射钛靶的方法制备TiO     

磁控溅射Ti—N膜沉积的空间分布研究

磁控溅射镀膜设备可以广泛用于镀膜Ｔｉ－Ｎ膜，从实用观点看，磁控溅射工艺中的溅射速率的溅射原子空间分布是广泛关心的，沉积在试样表面的溅射原子被认为除了与等离子体的参数有关，还与靶－工件的几何分布有关系。本文研究了真空室中Ｔｉ－Ｎ膜沉积的空间分。在研究中发值得注意的是溅射量与沉积量作为两个不同的概念严格区分。     

沉积速率及相关工艺条件对直流反应磁控溅射制备TiO2薄膜性质的影响

在玻璃基板上用直流反应磁控溅射钛靶的方法制备TiO2 薄膜。在溅射总气压为 0 4Pa ,氧氩比分别为 1∶9,1∶5及 1∶3 2的情况下 ,调节溅射功率使沉积速率由 0 99nm/min变化到 12 12nm/min ,而且当基板温度为 34 0℃时 ,薄膜在可见光范围内的平均折射率基本不变 ,为 2 48± 0 0 3,而薄膜的表面形貌却有明显变化。XRD表明 ,在pO2 /pAr为 1∶9的条件下 ,薄膜中出现了TiOx(x <2 )的晶粒 ,但这对薄膜的光学性质并无影响。另外对TiO2 薄膜用于多层光学薄膜也作了初步试验及讨论     

提高太阳能集热管磁控溅射镀膜沉积速率的研究

工业上用磁控溅射技术为太阳能集热管制备Al-N/Al选择性吸收涂层,这种吸收涂层最外层为AlN介质减反层.在开环N2流量控制模式下,存在溅射制备AlN介质减反层沉积速率低的缺点.本文依据气相化学反应动力学理论,薄膜的沉积率正比于反应气体的浓度,提出了一种提高制备AlN陶瓷减反层沉积速率的方法.该方法将直流溅射靶电压反馈至模糊控制器,控制N2流量大小,让磁控溅射镀膜机稳定工作在拐点电压附近,实现反应溅射恒电压控制.并且采用单片机技术制作了样机,在SCS-700A型太阳能集热管镀膜机中使用,实验结果表明,镀膜沉积速率提高了4倍以上,整个系统工作稳定.     

KZC—磁控溅射镀膜机电源的研究

本文介绍KZC—磁控溅射镀膜机电源的组成，工作原理和具有自动起动功能及抑 制系统振荡的良好动态特性。文中详述了“自适应电流调节器”、“电流截止负反馈”、 “触发电路”、“给定积分器和电压调节器”。该电源为磁控溅射镀膜设备实现自动控制 提供了方便。     

1kA高功率脉冲磁控溅射电源研制及试验研究

高功率脉冲磁控溅射(HPPMS)以其在真空镀膜上更大的优势而越来越受到重视,高压大电流电源是实现HPPMS的关键因素。本文研制了1000 A高功率脉冲磁控溅射电源,给出了电源框架图和主电路拓扑结构图。对脉冲部分采用仿真分析探索大模块IGBT的不均流因素,结果表明驱动一致性是影响均流的关键原因之一;分析了大电流时IGBT两端电压过冲问题,采用RCD吸收和续流回路能有效抑制电压过冲,使电压过冲在正常安全范围内。用所研制的电源进行等离子体负载实验,运行良好,为性能优异薄膜的制备奠定硬件基础。     

Preparation of CrN thick films by high-rate middle-frequency unbalanced magnetron sputtering

A middle-frequency (MF) unbalanced magnetron sputtering system equipped with an electron source was designed and used for deposition of CrN thick films under various MF power (1.4–14 kW) at fixed temperature, pressure, and gas flow rate. The deposition rate was increased with increasing MF power and the structure and N/Cr ratio of the deposited CrN films exhibited a complicated behavior, where the CrN films were a polycrystalline structure and the films deposited under optimized conditions exhibited a dense columnar structure and a micro-hardness of 16 GPa. The dependence of the structure and micro-hardness on MF power was interpreted by the power deposition efficiency.     

Preparation of CrN thick films by high-rate middle-frequency unbalanced magnetron sputtering

A middle-frequency (MF) unbalanced magnetron sputtering system equipped with an electron source was designed and used for deposition of CrN thick films under various MF power (1.4–14 kW) at fixed temperature, pressure, and gas flow rate. The deposition rate was increased with increasing MF power and the structure and N/Cr ratio of the deposited CrN films exhibited a complicated behavior, where the CrN films were a polycrystalline structure and the films deposited under optimized conditions exhibited a dense columnar structure and a micro-hardness of 16 GPa. The dependence of the structure and micro-hardness on MF power was interpreted by the power deposition efficiency.     

基于FPGA的数字化中频磁控溅射电源设计

介绍了一种全数字控制的中频磁控溅射电源设计.主电路前级采用直流斩波调压,后级采用全桥逆变的电路结构.控制电路由现场可编程门阵列(FPGA)计算产生高分辨率的数字脉宽调制信号(DPWM)实现.电源工作于恒流模式,通过PID算法调节Buck斩波电路的驱动DPWM来实现闭环控制.全桥逆变电路的驱动信号由FPGA计算产生,通过按键可设置驱动的DPWM,输出所需的固定频率和占空比的矩形波.对于靶面微打弧和强打弧,FPGA采取不同的保护措施.最后制作了5kW的样机进行验证,实验证明,方法可行,具有好的应用前景.     

旋转圆柱靶溅射沉积产额分布

采用数值计算模型,计算了旋转圆柱靶溅射产额分布。数值计算中假设从靶溅射出来的粒子服从余弦函数定律。计算得到的单靶溅射产额分布和Al靶在Ar气压0.4Pa测量得到的实验值基本相同。同时计算了孪生旋转圆柱靶的溅射产额分别与靶基距、靶间距,以及靶旋转角度的相关性。     

直流磁控溅射电源研制及输出特性研究

磁控溅射技术在薄膜制备领域广泛应用,电源是磁控溅射镀膜的关键设备之一.本文介绍了全桥逆变直流磁控溅射电源主电路和控制电路的设计,该电源输出功率2 kW,采用PI恒流控制,具有过流保护.通过阻性负载测试表明电源具有很好恒流特性,在输出功率超过400 W时电源效率比较高.利用氮气/氩气不锈钢靶直流磁控溅射实际的等离子体负载测试表明在保证真空室内压力不变的前提下,随着氮气比例的增加,电压下降,但电源恒流效果好,工作稳定.     

Effects of sputtering power on mechanical properties of Cr films deposited by magnetron sputtering

Abstract

Chromium (Cr) films were deposited on plain carbon steel sheets by dc and rf magnetron sputtering as well as by electroplating. Effects of dc or rf sputtering power on the deposition rate and properties such as, hardness, adhesion strength, surface roughness and corrosion resistance of the Cr films were investigated. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microcopy (SEM) analyses were performed to investigate the crystal structure, surface roughness, thickness of the Cr films. Salt fog tests were used to evaluate the corrosion resistance of the samples. The deposition rate, hardness and surface roughness of the Cr film deposited by either dc or rf sputtering increase with the increase in sputtering power but the adhesion strength is nearly independent of the sputtering power. The deposition rate, hardness and adhesion strength of the Cr film deposited by dc sputtering are higher than those of the Cr film deposited by rf sputtering, but rf sputtering offers smoother surface and higher corrosion resistance. The sputter deposited Cr film is harder and has a smoother surface than the electroplated one. The sputter deposited Cr film also has higher corrosion resistance than the electroplated one, which may be attributed to the smoother surface of the sputter deposited film.     

溅射功率对磁控溅射ZnO∶Al(ZAO)薄膜性能的影响

采用射频磁控溅射工艺,以高密度氧化锌铝陶瓷靶为靶材,衬底温度控制在室温,在玻璃基底上制备了透明导电Zn O∶Al(ZAO)薄膜。利用X射线衍射仪(XRD)、原子力显微镜(AFM)、紫外-可见光谱仪和范德堡法,系统研究了不同溅射功率对薄膜的结构、形貌及光电特性的影响。结果表明,不同溅射功率对薄膜的光透射率影响不大,而对薄膜结晶和电学性能影响较大。XRD表明薄膜为良好的c轴择优取向;可见光区(400~600 nm)平均透过率达到85%以上;在120W下沉积的薄膜电学性能达到了最佳。     

Effects of deposition parameters on tantalum films deposited by direct current magnetron sputtering

Effects of deposition parameters on tantalum films deposited by direct current magnetron sputtering were studied. The results indicated that the electrical properties were relative to the oxygen and other impurities rather than to growth orientation. As the sputtering power increases from 25 to 100 W, the preferred-growth orientation of Ta films changes from (200) to (202) and the oxygen and impurities content in the films decrease. The temperature coefficient of resistance also reduces from −289.79 to −116.65 ppm/°C. The O/Ta ratio decrease and grain size reduction related to a change of electrical resistivity were observed at substrate temperatures in the range 300-500 °C. At 650 °C, partial stable α-Ta associated with a sharp decrease of the electrical resistivity was also found.