The effect of annealing on structural, electrical and optical properties of nanostructured ITO films prepared by e-beam evaporation

Tin doped indium oxide (ITO) thin films with composition of 9.42 wt% SnO₂ and 89.75 wt% In₂O_3, and impurities balanced on glass substrates at room temperature have been prepared by electron beam evaporation technique and then were annealed in air at different temperatures from 350 to 550 °C for 1 h. XRD pattern showed that increasing annealing temperature increased the crystallinity of thin films and at 550 °C high quality crystalline thin films with grain size of about 37 nm were obtained. Conductivity of ITO thin films was increased by increasing annealing temperature and conductivity obtained results in 350-550 °C temperature range were also excellently fitted in both Arrhenius-type and Davis-Mott variable-range hopping conductivity models. The UV-vis transmittance spectra were also confirmed that the annealing temperature has significant effect on the transparency of thin films. The highest transparency over the visible wavelength region of spectrum (93%) obtained at 550 °C on annealing temperature. It should be noted that this thin film was deposited on substrate at room temperature. This result obtained is equivalent with those values that have already been reported but with high-level (20 wt%) tin doped indium oxide thin films and also at 350 °C substrate temperature. The allowed direct band gap at the temperature range 350-550 °C was estimated to be in the range 3.85-3.97 eV. Band gap widening with an increase in annealing temperature was observed and is explained on the basis of Burstein-Moss shift. A comparison between the electron beam evaporation and other deposition techniques showed that the better figure of merit value can be obtained by the former technique. At the end we have compared our results with other techniques.     

Effects of substrate temperature and post-deposition anneal on properties of evaporated cadmium telluride films

The effects of substrate temperature and post-deposition heat treatment steps on the morphology, structural, optical and electrical properties of thin film CdTe layers grown by vacuum evaporation were investigated. Scanning electron microscopy and X-ray diffraction (XRD) techniques were employed to study the structural changes. It was observed that the grain sizes and morphologies of as-deposited layers were similar for substrate temperatures of − 173 °C and − 73 °C. However, CdTe films produced at a substrate temperature of 27 °C had substantially larger grain size and clearly facetted morphology. Annealing at 200-400 °C in air did not cause any appreciable grain growth in any of the films irrespective of their growth temperature. However, annealing at 400 °C reduced faceting in all cases and initiated fusing between grains. XRD studies showed that this behavior after annealing at 400 °C coincided with an onset of a degree of randomization in the originally strong (111) texture of the as-grown layers. Optical band gap measurements showed sharpening of the band-edge upon annealing at 400 °C and a band gap value in the range of 1.46-1.49 eV. Resistivity measurements indicated that annealing at 400 °C in air forms a highly resistive compensated CdTe film. All results point to 400 °C to be a critical annealing temperature at which optical, structural and electrical properties of CdTe layers start to change.     

The influence of annealing temperature on the structural, electrical and optical properties of ion beam sputtered CuInSe2 thin films

CuInSe₂ (CIS) thin films were prepared by ion beam sputtering deposition of copper layer, indium layer and selenium layer on BK7 glass substrates followed by annealing at different temperatures for 1 h in the same vacuum chamber. The influence of annealing temperature (100-400 °C) on the structural, optical and electrical properties of CIS thin films was investigated. X-ray diffraction (XRD) analysis revealed that CIS thin films exhibit chalcopyrite phase and preferential (112) orientation when the annealing temperature is over 300 °C. Both XRD and Raman show that the crystalline quality of CIS thin film and the grain size increase with increasing annealing temperature. The reduction of the stoichiometry deviation during the deposition of CIS thin films is achieved and the elemental composition of Cu, In and Se in the sample annealed at 400 °C is very near to the stoichiometric ratio of 1:1:2. This sample also has an optical energy band gap of about 1.05 eV, a high absorption coefficient of 10⁵ cm⁻¹ and a resistivity of about 0.01 Ω cm.     

Effect of thermal annealing treatment on structural, electrical and optical properties of transparent sol-gel ZnO thin films

Effect of thermal annealing in different ambients on the structural, electrical and optical properties of the sol-gel derived ZnO thin films are studied. XRD results show that the annealed ZnO films with wurtzite structure are randomly oriented. Crystallite size, carrier concentration, resistivity and mobility are found to be dependent on the annealing temperature. The change in carrier concentration is discussed with respect to the removal of adsorbed oxygen from the grain boundaries. The highest carrier concentration and lowest resistivity are 8 × 10¹⁸ cm⁻³ and 2.25 × 10⁻¹ Ω cm, respectively, for the film annealed at 500 °C in vacuum. The annealed films are highly transparent with average transmission exceeding 80% in the wavelength region of 400-800 nm. In all three ambients, the optical band gap value does not change much below 500 °C temperature while above this temperature band gap value decreases for nitrogen and air and increases for vacuum.     

Electrical, optical, and structural properties of InZnSnO electrode films grown by unbalanced radio frequency magnetron sputtering

We have investigated the electrical, optical, structural, and annealing properties of indium zinc tin oxide (IZTO) films prepared by an unbalanced radio frequency (RF) magnetron sputtering at room temperature, in a pure Ar ambient environment. It was found that the electrical and optical properties of unbalanced RF sputter grown IZTO films at room temperature were influenced by RF power and working pressure. At optimized growth condition, we could obtain the IZTO film with the low resistivity of 3.77 × 10^− 4 Ω cm, high transparency of ~ 87% and figure of merit value of 21.2 × 10^− 3Ω^− 1, without the post annealing process, even though it was completely an amorphous structure due to low substrate temperature. In addition, the field emission scanning electron microscope analysis results showed that all IZTO films are amorphous structures with very smooth surfaces regardless of the RF power and working pressure. However, the rapid thermal annealing process above the temperature of 400 °C lead to an abrupt increase in resistivity and sheet resistance due to the transition of film structure from amorphous to crystalline, which was confirmed by X-ray diffraction examination.     

Optical and electrical properties of heat-resistant Sb-doped Sn1 − xHfxO2 transparent conducting films

To examine variations in the transparent conducting properties after annealing at high temperatures, 300-nm thick Sb-doped Sn_1 − xHf_xO₂ (x = 0.00-0.10) films were deposited onto silica glass substrates by the RF sputtering method and annealed in air up to 1000 °C at 200 °C increments. After annealing, all the Sb-doped SnO₂ films were transparent and electrically conductive, but large cracks, which decreased the electrical conductivity, were generated in several films due to crystallization or the thermal expansion difference between the film and substrate. Only the film deposited at room temperature in an Ar and O₂ mixed atmosphere did not crack after annealing, and its electrical conductivity exceeded 100 S cm^− 1 even after annealing at 1000 °C in air. Hf-doping blue shifted the fundamental absorption edges in the UV region in the Sb-doped Sn_1 − xHf_xO₂ films. Additionally, the optical transmission at 310 nm, T₃₁₀, increased as the Hf concentration increased, whereas the electrical conductivity was inversely proportional to the Hf concentration. On the other hand, thinner films (150-nm thick) with x = 0.00 showed both a high electrical conductivity over 100 S cm^− 1 and a high transparency T₃₁₀ = 65% after high temperature annealing.     

The effect of annealing on Al-doped ZnO films deposited by RF magnetron sputtering method for transparent electrodes

In this study, transparent conducting Al-doped zinc oxide (AZO) films with a thickness of 150 nm were prepared on Corning glass substrates by the RF magnetron sputtering with using a ZnO:Al (Al₂O₃: 2 wt.%) target at room temperature. This study investigated the effects of the post-annealing temperature and the annealing ambient on the structural, electrical and optical properties of the AZO films. The films were annealed at temperatures ranging from 300 to 500 °C in steps of 100 °C by using rapid thermal annealing equipment in oxygen. The thicknesses of the films were observed by field emission scanning electron microscopy (FE-SEM); their grain size was calculated from the X-ray diffraction (XRD) spectra using the Scherrer equation. XRD measurements showed the AZO films to be crystallized with strong (002) orientation as substrate temperature increases over 300 °C. Their electrical properties were investigated by using the Hall measurement and their transmittance was measured by UV-vis spectrometry. The AZO film annealed at the 500 °C in oxygen showed an electrical resistivity of 2.24 × 10^− 3 Ω cm and a very high transmittance of 93.5% which were decreased about one order and increased about 9.4%, respectively, compared with as-deposited AZO film.     

Study on physical properties of indium-doped zinc oxide deposited by spray pyrolysis technique

Transparent conducting indium doped zinc oxide (IZO) thin films have been deposited on soda-lime glass substrates by the spray pyrolysis technique. The structural, electrical, and optical properties of these films were investigated as a function of substrate temperature. In this work the substrate temperature was varied between 350 °C and 500 °C. X-ray diffraction pattern reveals that at 350 °C dominant peak is (100) orientation. By increasing substrate temperature from 350 °C to 450 °C, sheet resistance decreases, from 302 Ω/□ to 26 Ω/□, then at 500 °C increases to 34 Ω/□. In the useful range for deposition (i.e. 450 °C to 500 °C), the orientation of the films was predominantly (002). The lowest sheet resistance (26Ω/□) is obtained at substrate temperature of about 450 °C with the transmittance of about 75%. Study of scanning electron microscopy images shows that films deposited at 400 °C, have grain size as large as 574 nm, while with increasing substrate temperature to 450 °C, grain size becomes smaller and reaches to a value of about 100 nm with spherical shape. At 500 °C grain size value would be around 70 nm with the same spherical shape.     

The effect of substrate temperature on Al-doped ZnO characteristics for organic thin film transistor applications

The influence of substrate temperature on the structural, electrical, and optical properties of aluminum-doped zinc oxide (AZO) films fabricated by radio frequency (RF) magnetron sputtering was investigated. The AZO films were deposited at various substrate temperatures, and the effect of AZO gate electrode conductivity on organic thin film transistor (OTFT) performance was examined. While an increase in the substrate temperature from 100 °C to 300 °C led to an improvement in crystallinity, substrate temperatures over 300 °C caused degradation of the electrical and surface properties. We fabricated OTFTs using AZO films prepared at various substrate temperatures and obtained good device performance. Thus, the performance of an OTFT can be determined by the conductivity of the AZO gate electrode.     

Low temperature annealing effects on the structure and optical properties of ZnO films grown by pulsed laser deposition

ZnO thin films were deposited on glass substrates at room temperature (RT) ∼500 °C by pulsed laser deposition (PLD) technique and then were annealed at 150-450 °C in air. The effects of annealing temperature on the microstructure and optical properties of the thin films deposited at each substrate temperature were investigated by XRD, SEM, transmittance spectra, and photoluminescence (PL). The results showed that the c-axis orientation of ZnO thin films was not destroyed by annealing treatments; the grain size increased and stress relaxed for the films deposited at 200-500 °C, and thin films densified for the films deposited at RT with increasing annealing temperature. The transmittance spectra indicated that E_g of thin films showed a decreased trend with annealing temperature. From the PL measurements, there was a general trend, that is UV emission enhanced with lower annealing temperature and disappeared at higher annealing temperature for the films deposited at 200-500 °C; no UV emission was observed for the films deposited at RT regardless of annealing treatment. Improvement of grain size and stoichiometric ratio with annealing temperature can be attributed to the enhancement of UV emission, but the adsorbed oxygen species on the surface and grain boundary of films are thought to contribute the annihilation of UV emission. It seems that annealing at lower temperature in air is an effective method to improve the UV emission for thin films deposited on glass substrate at substrate temperature above RT.     

Inkjet-printing of indium tin oxide (ITO) films for transparent conducting electrodes

Indium-tin-oxide (ITO) films have been prepared by inkjet-printing using ITO nanoparticle inks. The electrical and optical properties of the ITO films were investigated in order to understand the effects of annealing temperatures under microwave. The decrease in the sheet resistance and resistivity of the inkjet-printed ITO films was observed as the annealing temperature increases. The film annealed at 400 °C showed the sheet resistance of 517 Ω/sq with the film thickness of ∼580 nm. The optical transmittance of the films remained constant regardless of their annealing temperatures. In order to further reduce the sheet resistance of the films, Ag-grid was printed in between two layers of inkjet-printed ITO. With 3 mm Ag-grid line-to-line pitch, the Ag-grid inserted ITO film has the sheet resistance of 3.4 Ω/sq and the transmittance of 84% after annealing at 200 °C under microwave.     

Preparation of anatase TiO2 thin films for dye-sensitized solar cells by DC reactive magnetron sputtering technique

Anatase titanium dioxide (TiO₂) thin films are prepared by DC reactive magnetron sputtering using Ti target as the source material. In this work argon and oxygen are used as sputtering and reactive gas respectively. DC power is used at 100 W per 1 h. The distance between the target and substrate is fixed at 4 cm. The glass substrate temperature value varies from room temperature to 400 °C. The crystalline structure of the films is determined by X-ray diffraction analysis. All the films deposited at temperatures lower than 300 °C were amorphous, whereas films obtained at higher temperature grew in crystalline anatase phase. Phase transition from amorphous to anatase is observed at 400 °C annealing temperature. Transmittances of the TiO₂ thin films were measured using UV-visible NIR spectrophotometer. The direct and indirect optical band gap for room temperature and substrate temperature at 400 °C is found to be 3.50, 3.41 eV and 3.50, 3.54 eV respectively. The transmittance of TiO₂ thin films is noted higher than 75%. A comparison among all the films obtained at room temperature showed a transmittance value higher for films obtained at substrate temperature of 400 °C. The morphology of the films and the identification of the surface chemical stoichiometry of the deposited film at 400 °C were studied respectively, scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). The surface roughness and the grain size are measured using AFM.     

Preparation and characterization of indium zinc oxide thin films by electron beam evaporation technique

In this work, the preparation of In₂O₃-ZnO thin films by electron beam evaporation technique on glass substrates is reported. Optical and electrical properties of these films were investigated. The effect of dopant amount and annealing temperature on the optical and electrical properties of In₂O₃-ZnO thin films was also studied. Different amount of ZnO was used as dopant and the films were annealed at different temperature. The results showed that the most crystalline, transparent and uniform films with lowest resistivity were obtained using 25 wt% of ZnO annealed at 500 °C.     

Nanomechanical properties of FePtPd ternary alloy thin films

Presented in this study are crystalline structure and mechanical properties of FePt_0.75Pd_0.25 ternary alloy thin films deposited under the various annealing temperatures, obtained by means of transmission electron microscopy (TEM) and nanoindentation techniques. FePtPd ternary alloy thin films are deposited on Si substrates using a multi-target DC magnetron sputtering system. Results indicate that the grain size increase from 40 to 135 nm as the annealing temperature increases from 400 to 600 °C. From nanoindentation measurements, the hardness of FePtPd ternary alloy thin films are 11.6 ± 0.4, 10.4 ± 0.1 and 8.8 ± 0.3 GPa for the annealed temperatures of 400, 500 and 600 °C, respectively. And, the corresponding Young's moduli are 175.4, 152.2 and 142.6 GPa, respectively. Hardness for FePtPd ternary alloy thin films decreased slightly in accordance with the increase of the grain size. By fitting experimental results with the Hall-Petch equation, a probable lattice friction stress of 5.15 ± 0.05 GPa and Hall-Petch constant of 44.25 ± 2.55 GPa nm^1/2 are obtained.     

Annealing effects on microstructure and mechanical properties of sputtered multilayer Cr(1 − x)AlxN films

Multilayer Cr_(1 − x)Al_xN films with a total thickness of 2 μm were deposited on high-speed steel by medium frequency magnetron sputtering from Cr and Al-Cr (70 at.% Al) targets. The samples were annealed in air at 400 °C, 600 °C, 800 °C and 1000 °C for 1 hour. Films were characterized by cross-sectional scanning electron microscopy and X-ray diffraction analysis. The grain size of the as-deposited multilayer films is about 10 nm, increasing with the annealing temperature up to 100 nm. Interfacial reactions have clearly changed at elevated annealing temperatures. As-deposited films' hardness measured by nanoindentation is 22.6 GPa, which increases to 26.7 GPa when the annealing temperature goes up to 400 and 600 °C, but hardness decreases to 21.2 GPa with further annealing temperature increase from 600 to 1000 °C. The multilayer film adhesion was measured by means of the scratch test combined with acoustic emission for detecting the fracture load. The critical normal load decreased from 49.7 N for the as-deposited films to 21.2 N for the films annealed at 1000 °C.     

Optical properties of sputter deposited transparent and conducting TiO2:Nb films

Transparent and conducting thin films of TiO₂:Nb were prepared on glass by reactive dc magnetron sputtering in Ar + O₂. Post-deposition annealing in vacuum at 450 °C led to good electrical conductivity and optical transparency. The optical properties in the sub-bandgap region were in good agreement with Drude free electron theory, which accounts for intraband absorption. The band gap of the films was found to be in the range of 3.3 to 3.5 eV and signifies the onset of interband absorption. Electrical conductivities in the 10^− 3 Ω cm range were obtained both from dc electrical measurements and from analysis of the optical measurements.     

The electrical and optical properties of indium zinc tin oxide thin films with different Sn/Zn ratio

Indium zinc tin oxide (IZTO) thin films with two different chemical compositions, i.e. IZTO15 and IZTO25, where In content was fixed at 60 at.% and Sn content was 15 and 25 at.%, respectively, were deposited onto alkaline-free glass substrate at temperature from 37 °C to 600 °C. The deposition process was carried out in argon using an RF magnetron sputter. After deposition, the films were annealed in argon atmosphere at 450 °C for 30 min. The effect of substrate temperature and annealing treatment was investigated, and the minimum resistivity value of 3.44 × 10^− 4Ω.cm was obtained from the film deposited at 400 °C using IZTO25 target followed by rapid thermal annealing at 450 °C for 30 min. The average optical transmittance was kept fairly high over 80%. It was proven that both substrate temperature and thermal annealing were important parameters in lowering the electrical resistivity without deteriorating optical properties.     

Effects of the annealing treatment on electrical and optical properties of ZnO transparent conduction films by ultrasonic spraying pyrolysis

Effects of the annealing treatment on properties of ZnO thin films prepared on silica glass substrates by the ultrasonic spraying pyrolysis process were studied. Zinc acetate dihydrate and methanol were used as a starting material and a solvent, respectively. For ZnO thin films untreated with annealing, the preferred grain growth along the (0 0 2) plane was observed. The electrical resistivity and the direct band gap values of these films decreased with increasing the deposit temperature. By applying the annealing treatment in a reducing atmosphere, while the degree of the preferred (0 0 2) orientation of films decreased, the electrical conductivity of films was improved. When compared with the resistivity values of films without the annealing treatment, the values of films annealed in the reducing atmosphere were decreased by about two orders of magnitude. The lowest resistivity value was 1.62×10⁻¹ Ω cm, which was obtained in the film annealed at 500 °C in nitrogen with 5% hydrogen. The optical transmittances of the films were higher than 80% regardless of the application of the annealing treatment in a reducing atmosphere. The direct band gap values of films annealed in a reducing atmosphere were approximately 3.27 eV.     

Electrical properties of vanadium tungsten oxide thin films

The vanadium tungsten oxide thin films deposited on Pt/Ti/SiO₂/Si substrates by RF sputtering exhibited good TCR and dielectric properties. The dependence of crystallization and electrical properties are related to the grain size of V_1.85W_0.15O₅ thin films with different annealing temperatures. It was found that the dielectric properties and TCR properties of V_1.85W_0.15O₅ thin films were strongly dependent upon the annealing temperature. The dielectric constants of the V_1.85W_0.15O₅ thin films annealed at 400 °C were 44, with a dielectric loss of 0.83%. The TCR values of the V_1.85W_0.15O₅ thin films annealed at 400 °C were about −3.45%/K.     

Effect of annealing on the electrical, optical and structural properties of cadmium stannate thin films prepared by spray pyrolysis technique

Polycrystalline thin films of cadmium stannate (Cd₂SnO₄) were deposited by spray pyrolysis method on the Corning substrates at substrate temperature of 525 °C. Further, the films were annealed at 600 °C in vacuum for 30 min. These films were characterized for their structural, electrical and optical properties. The experimental results showed that the post-deposition annealing in vacuum has a significant influence on the properties of the films. The average grain size of the film was increased from 27.3 to 35.0 nm on heat treatment. The average optical transmittance in the visible region (500-850 nm) is decreased from 81.4% to 73.4% after annealing in vacuum. The minimum resistivity achieved in the present study for the vacuum annealed films is the lowest among the reported values for the Cd₂SnO₄ thin films prepared by spray pyrolysis method.