Seed layer-free electrodeposition of well-aligned ZnO submicron rod arrays via a simple aqueous electrolyte

A potentiostatic electrodeposition technique was used to directly fabricate large-scale, well-aligned, and single-crystalline submicron ZnO rod arrays on tin doped indium oxide glass substrate without a pre-prepared seed layer of ZnO from an aqueous solution only containing zinc nitrate. The effects of electrochemical parameters, such as electrodeposition potential, electrodeposition duration, solution temperature, and precursor concentration, on the orientation, morphology, aspect ratio, and growth rate of ZnO rod arrays were systematically investigated. Results show that submicron ZnO rod arrays with (0 0 0 2) preferred orientation and perfect crystallization were obtained when electrodeposition potential was in the range from −0.6 to −1.1 V and solution temperature was controlled above 60 °C. Both high solution temperature and low precursor concentration resulted in the decrease in rod diameters. Photoluminescence measures showed that small diameter and nanotips of ZnO rod arrays should be responsible for strong and sharp ultraviolet emission in the room temperature photoluminescence spectra.     

Synthesis, characterization and optical properties of sheet-like ZnO

Sheet-like ZnO with regular hexagon shape and uniform diameter has been successfully synthesized through a two-step method without any metal catalyst. First, the sheet-like ZnO precursor was synthesized in a weak alkaline carbamide environment with stirring in a constant temperature water-bath by the homogeneous precipitation method, then sheet-like ZnO was obtained by calcining at 600 °C for 2 h. The structures and optical properties of sheet-like ZnO have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), photoluminescence (PL) and UV-vis-NIR spectrophotometer. The results reveal that the product is highly crystalline with hexagonal wurtzite phase and has appearance of hexagon at (0 0 0 1) plane. The HRTEM images confirm that the individual sheet-like ZnO is single crystal. The PL spectrum exhibits a narrow ultraviolet emission at 397 nm and a broad visible emission centering at 502 nm. The band gap of sheet-like ZnO is about 3.15 eV.     

Fabrication of lithium-doped zinc oxide film by anodic oxidation and its ferroelectric behavior

A lithium-doped zinc oxide (ZnO) film was obtained by the anodic oxidation of a zinc sheet in a lithium hydroxide (LiOH) solution under an external DC voltage. The formation of the ZnO film on the surface of the Zn sheet is attributed to two simultaneous processes: the electrochemical oxidation of Zn to ZnO, and the chemical dissolution of ZnO. It was also confirmed that Li element was successfully introduced into the lattice of the ZnO film. The curves of the polarization versus applied field were measured to be hysteresis loops, suggesting ferroelectricity of the Li-doped ZnO film. The remanent polarization and the coercive field of the film were measured to be 4.7 × 10⁻³ C m⁻² and 1.2 × 10⁷ V m⁻¹, respectively. This ferroelectricity is believed to be the result of the occupation of off-centered positions in oxygen tetrahedra by the Li⁺ ions.     

Enhanced ferroelectric properties of Pb(Zr0.80Ti0.20)O3/PbO thin films prepared by radio frequency magnetron sputtering

The Pb(Zr_0.80Ti_0.20)O₃ (PZT) thin films with and without a PbO buffer layer were deposited on the Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrates by radio frequency (rf) magnetron sputtering method. The PbO buffer layer improves the microstructure and electrical properties of the PZT thin films. High phase purity and good microstructure of the PZT thin films with a PbO buffer layer were obtained. The effect of the PbO buffer layer on the ferroelectric properties of the PZT thin films was also investigated. The PZT thin films with a PbO buffer layer possess better ferroelectric properties with higher remnant polarization (P_r = 25.6 μC/cm²), and lower coercive field (E_c = 60.5 kV/cm) than that of the films without a PbO buffer layer (P_r = 9.4 μC/cm², E_c = 101.3 kV/cm). Enhanced ferroelectric properties of the PZT thin films with a PbO buffer layer is attributed to high phase purity and good microstructure.     

ZnO nanowire growth by electric current heating method: A study on the effect of substrate temperature

In this study, we report the growth of ZnO nanowire on quartz glass substrates with Au-catalyst assistance by electric current heating of ZnO ceramic bar. The effect of substrate temperature on the properties of ZnO nanostructures has been investigated systematically. Structural analysis indicates that the grown ZnO crystals belong to hexagonal phase with preferential growth along (0 0 2) orientation. Scanning electron microscopic studies reveal the aligned ZnO nanowires were grown at 800 °C. The typical length and diameter of nanowires are in the uniform ranges of 4–20 μm and 20–100 nm, respectively, showing their high aspect ratio of about 1000. We have made an attempt to discuss about the change in ZnO nanostructures with different substrate temperatures and the possible mechanism for the growth of nanowires. Optical reflectance studies show the infrared reflectivity was controlled through the substrate temperature.     

Rapid preparation, characterization, and photoluminescence of ZnO films by a novel chemical method

A novel and simple chemical route was developed for the deposition of ZnO film from aqueous solution, integrating the merits of successive ionic layer adsorption and reaction and chemical bath deposition. ZnO thin films on glass and Si(1 0 0) substrates were deposited with the precursor of zinc-ammonia complex. As-deposited ZnO film exhibits good crystallinity with the hexagonal wurtzite crystalline structure and the preferential orientation along (0 0 2) plane. With a dense and continuous appearance, the film is composed of ZnO particles in even size of 200-300 nm. Under the excitation of 340 nm, strong and sharp near band gap emission (∼391 nm) dominates the photoluminescence spectra with several weak emission peaks related to the deep level (∼450-500 nm). In addition, the mechanism for the deposition process of ZnO from aqueous solution was preliminarily discussed.     

Low temperature solution synthesis and characterization of ZnO nano-flowers

Synthesis of flower-shaped ZnO nanostructures composed of hexagonal ZnO nanorods was achieved by the solution process using zinc acetate dihydrate and sodium hydroxide at very low temperature of 90 °C in 30 min. The individual nanorods are of hexagonal shape with sharp tip, and base diameter of about 300-350 nm. Detailed structural characterizations demonstrate that the synthesized products are single crystalline with the wurtzite hexagonal phase, grown along the [0 0 0 1] direction. The IR spectrum shows the standard peak of zinc oxide at 523 cm⁻¹. Raman scattering exhibits a sharp and strong E₂ mode at 437 cm⁻¹ which further confirms the good crystallinity and wurtzite hexagonal phase of the grown nanostructures. The photoelectron spectroscopic measurement shows the presence of Zn, O, C, zinc acetate and Na. The binding energy ca. 1021.2 eV (Zn 2p_3/2) and 1044.3 eV (Zn 2p_1/2), are found very close to the standard bulk ZnO binding energy values. The O 1s peak is found centered at 531.4 eV with a shoulder at 529.8 eV. Room-temperature photoluminescence (PL) demonstrate a strong and dominated peak at 381 nm with a suppressed and broad green emission at 515 nm, suggests that the flower-shaped ZnO nanostructures have good optical properties with very less structural defects.     

Microscale sphere assembly of ZnO nanotubes

In this paper, we report a facile method to perform microsphere organization of ZnO nanotubes. Study shows ZnO nanotubes with diameters of 80-150 nm and lengths of 1.2-2 μm were assembled into 3-4.5 μm microsphere superstructures, the significance of these assembled ZnO nanotubes is that one-dimensional anisotropic ZnO building blocks are selectively aligned into highly symmetrical three-dimensional isotropic conformations, which may promise us new types of ZnO applications. These microsphere assemblies of ZnO nanotubes have a wide visible yellow emission at 600 cm⁻¹. The assembly mechanism was also proposed, the addition of metallic zinc species into linear poly ethylene glycol (PEG) containing ethanol and water mixed solution led to aggregation of PEG polymer coils to Zn(II)/PEG globules with a diameter of ∼500 nm, the globule turned into tube-like-structured ZnO-PEG microsphere assemblies (∼2 μm) after ultrasonic pretreatment, ZnO nanotubes were formed by the oriented attachment and Ostwald ripening of ZnO growth units onto the tube-like structures during the following hydrothermal process.     

Effect of thickness on the structural, electrical and optical properties of ZnO films

A series of ZnO films of different thickness have been deposited on glass substrates using sol-gel technique by varying the number of spin coatings and the effect of film thickness on the structural, electrical and optical properties have been investigated. The XRD results indicate that the full width at half maximum (FWHM) of the (0 0 2) diffraction peak and the strain along c-axis are decreased as the film is grown up to a thickness of 300 nm. Above 300 nm, the strain again becomes appreciable. The surface morphology shows that the grains become more uniform and bigger in size as the film thickness increases. Electrical result shows that although ZnO film with thickness of around 260 nm has the highest resistivity but is better for current conduction. The excitonic nature in the absorption spectrum becomes prominent for a film with thickness of around 260 nm. The band gap increases and then decreases as the film grows thicker.     

Structural properties and growth mechanism of flower-like ZnO structures obtained by simple solution method

Flower-shaped zinc oxide (ZnO) structures have been synthesized in the reaction of aqueous solution of zinc nitrate and NaOH at 90 °C. To examine the morphology of ZnO nanostructures, time-dependent experiments were carried out. Detailed structural observation showed that the flower-like structures consist of triangular-shaped leaves, having sharpened tips with wider bases. Photoluminescence spectrum measured at room temperature show a sharp UV emission at 381 nm and a strong and broad green emission at 480-750 nm attributed to structural defects. A possible growth mechanism for the formation of flower-shaped ZnO structures is discussed in detail.     

Low temperature pH dependent synthesis of flower-like ZnO nanostructures with enhanced photocatalytic activity

In the present study we have synthesized flower-like ZnO nanostructures comprising of nanobelts of 20 nm width by template and surfactant free low-temperature (4 °C) aqueous solution route. The ZnO nanostructures exhibit flower-like morphology, having crystalline hexagonal wurtzite structure with (0 0 1) orientation. The flowers with size between 600 and 700 nm consist of ZnO units having crystallite size of ∼40 nm. Chemical and structural characterization reveals a significant role of precursor:ligand molar ratio, pH, and temperature in the formation of single-step flower-like ZnO at low temperature. Plausible growth mechanism for the formation of flower-like structure has been discussed in detail. Photoluminescence studies confirm formation of ZnO with the defects in crystal structure. The flower-like ZnO nanostructures exhibit enhanced photochemical degradation of methylene blue (MB) with the increased concentration of ligand, indicating attribution of structural features in the photocatalytic properties.     

Low temperature synthesis of porous copper/zinc oxide

A two-step urea aqueous solution process at a low temperature (90 °C) was employed for the preparation of a copper/zinc oxide material. Well defined porous spherical particles with average sizes of around 5 μm in diameter were prepared first and then used as a support for further copper-zinc precipitation. It was found that the particle composition and shape were changed with applied stirring speed (100 rpm or 200 rpm) and that particle size is inversely proportional to the copper content in the particles. The particles preserved their size and shape after the heat treatment. Prepared Cu/ZnO samples showed catalytic activity for the reaction of steam reforming of methane. Samples were characterized by scanning field emission electron microscopy, energy dispersive X-ray analyses, X-ray powder diffraction, surface area analyses, and atomic absorption spectroscopy.     

Effect of phosphorus incorporation on morphology and optical properties of ZnO nanorods

Phosphorus-doped ZnO nanorods have been prepared on Si substrates by thermal evaporation process without any catalyst. X-ray photoelectron spectroscopy and Raman spectra indicate that phosphorus entering into ZnO nanorods mainly occupies Zn site rather than O one. The introduction of phosphorus leads to the morphological changes of nanorods from hexagonal tip to tapered one, which should be attributed to the relaxation of the lattice strain caused by phosphorus occupying Zn site along the radial direction. Transmission electron microscopy shows that phosphorus-doped ZnO nanorods still are single crystal and grow along [0 0 0 1] direction. The effect of phosphorous dopant on optical properties of ZnO nanorods also is studied by the temperature-dependent photoluminescence spectra, which indicates that the strong ultraviolet emission is connected with the phosphorus acceptor-related emissions.     

A template-free alcoholthermal route to Ti(Sn)-doped ZnO nanorods

Ti(Sn)-doped single-crystalline ZnO nanorods with an average diameter of 20 nm and length up to nearly 1 μm were synthesized by a facile ultrasonic irradiation-assisted alcoholthermal method without involving any templates. Photoluminescence spectra of the Ti-doped ZnO nanorods were measured at room temperature and three emitting bands, being a violet emission at 400-415 nm, a blue band at 450-470 nm and a green band at around 550 nm, were detected. The emission intensities of the Ti-doped ZnO nanorods enhance gradually with increasing the doping concentrations. As to the Sn-doped ZnO nanorods, the green emission shifts to 540 nm and the emission intensities increase first but decrease later with increasing the doping concentrations.     

Effect of boron doping on optical properties of sol-gel based nanostructured zinc oxide films on glass

Boron doped zinc oxide thin films (∼80 nm) were deposited onto pure silica glass by sol-gel dip coating technique from the precursor sol/solution of 4.0 wt.% equivalent oxide content. The boron concentration was varied from 0 to 2 at.% w.r.t. Zn using crystalline boric acid. The nanostructured feature of the films was visualized by FESEM images and the largest cluster size of ZnO was found in 1 at.% boron doped film (B1ZO). The presence of mixed crystal phases with hexagonal as major phase was identified from XRD reflections of the films. Particle size, optical band gap, visible specular reflection, room temperature photoluminescence (PL) emissions (3.24-2.28 eV), infra-red (IR) and Raman active longitudinal optical (LO) phonon vibration were found to be dependent on dopant concentration. For the first time, we report the room temperature fine structured PL emissions as phonon replicas originated from the LO phonon (both IR and Raman active) in 1 at.% boron doped zinc oxide film.     

Synthesis of Sn-doped ZnO nanorods and their photocatalytic properties

Sn-doped ZnO nanorods were fabricated by a hydrothermal route, and characterized by X-ray diffraction, field emission scanning electron microscope, UV-vis spectroscopy, Raman spectra, solid-state nuclear magnetic resonance (NMR) spectra, and room temperature photoluminescence spectroscopy. Solid-state NMR result confirms that Sn⁴⁺ was successfully incorporated into the crystal lattice of ZnO. Room temperature photoluminescence showed that all the as-synthesized products exhibited a weak UV emission (380 nm) and a strong visible emission (540 nm), but the intensities of the latter emission increased with increase in Sn concentration. The improvement of visible emission at 540 nm in the Sn-doped ZnO samples was suggested to be a result of the lattice defects increased by doping of Sn in zinc oxide. In addition, the photocatalytic studies indicated that Sn-doped ZnO nanorods are a kind of promising photocatalyst in remediation of water polluted by some chemically stable azo dyes.     

Zinc oxide micro- and nanoparticles: Synthesis, structure and optical properties

Zinc oxide (ZnO) spherical nanoparticles (SNPs) and bitter-melon-like (BML) microparticles were synthesized by a hydrothermal route using a zinc (Zn) plate as a source and substrate at various synthesis conditions. The structural analysis confirmed the formation of ZnO with hexagonal wurtzite phase on the hexagonal Zn substrate with growth of the ZnO microparticles along the [1 0 1] direction. The UV-vis absorption spectra of the ZnO microparticles indicated absorption peaks in the UV region which can be attributed to the band gap of ZnO. The room temperature photoluminescence (PL) of the ZnO microparticles exhibited a broad emission band, which is fitted with four Gaussian peaks and were assigned to transitions involving free excitons and various defect centers. The growth model for the formation of ZnO micro- and nanoparticles is presented.     

Synthesis of ZnO flowers and their photoluminescence properties

Flower-like ZnO nano/microstructures have been synthesized by thermal treatment of Zn(NH₃)₄²⁺ precursor in aqueous solvent, using ammonia as the structure directing agent. A number of techniques, including X-ray diffraction (XRD), field emission scan electron microscopy (FESEM), transmission electron microscopy (TEM), thermal analysis, and photoluminescence (PL) were used to characterize the obtained ZnO structures. The photoluminescence (PL) measurements indicated that the as-synthesized ZnO structures showed UV (∼375 nm), blue (∼465 nm), and yellow (∼585 nm) emission bands when they were excited by a He-Gd laser using 320 nm as the excitation source. Furthermore, it has been interestingly found that the intensity of light emission at ∼585 nm remarkably decreased when the obtained ZnO nanocrystals were annealed at 600 °C for 3 h in air. The reason might be the possible oxygen vacancies and interstitials in the sample decreased at high temperature.     

Photoluminescence and field-emission characteristics of ZnO nanowires synthesized by two-step method

ZnO nanowires with excellent photoluminescence (PL) and field-emission properties were synthesized by a two-step method, and the ZnO nanowires grew along (0 0 2) direction. PL measurements showed that the ZnO nanowires have stronger ultraviolet emission properties at 376 nm and there is 3 nm blue shift after the nanowires were immersed in thiourea (TU) solution compared with those of without immersion. The immersed-ZnO nanowires show a turn-on field of 2.3 V/μm at a current density of 0.1 μA/cm and emission current density up to 1 mA/cm² at an applied field of 6.8 V/μm, which demonstrate that the immersed-ZnO nanowires posses efficient field-emission properties in contrast with those not immersed. The ZnO nanowires may be ideal candidates for making luminescent devices and field-emission displays.     

Electrical and gas sensing properties of self-aligned copper-doped zinc oxide nanoparticles

Electrical and gas sensing properties of nanocrystalline ZnO:Cu, having Cu X wt% (X = 0.0, 0.5, 1.0, and 1.5) in ZnO, in the form of pellet were investigated. Copper chloride and zinc acetate were used as precursors along with oxalic acid as a precipitating reagent in methanol. Material characterization was done by X-ray diffraction (XRD), scanning electron microscopy (SEM), field emission scanning electron microscopy (FE-SEM) and inductive coupled plasma with optical emission spectrometry (ICP-OES). FE-SEM showed the self-aligned Cu-doped ZnO nano-clusters with particles in the range of 40-45 nm. The doping of 0.5% of copper changes the electrical conductivity by an order of magnitude whereas the temperature coefficient of resistance (TCR) reduces with increase in copper wt% in ZnO. The material has shown an excellent sensitivity for the H₂, LPG and CO gases with limited temperature selectivity through the optimized operating temperature of 130, 190 and 220 °C for H₂, LPG and CO gases, respectively at 625 ppm gas concentration. The %SF was observed to be 1460 for H₂ at 1% Cu doping whereas the 0.5% Cu doping offered %SF of 950 and 520 for CO and LPG, respectively. The response and recovery time was found to be 6 to 8 s and 16 s, respectively.