Composition dependence of optical constants of Ge1 − xSe2Pbx thin films

Optical constants of vacuum-evaporated thin films in the Ge_1 − xSe₂Pb_x (x = 0, 0.2, 0.4, 0.6) system were calculated from reflectance and transmittance spectra. It is found that the films exhibit a non-direct gap, which decreases with increasing Pb content. The variation in the refractive index and the imaginary part of the dielectric constant with photon energy is reported. The relationship between the optical gap and chemical composition in chalcogenide glasses is discussed in terms of the average heat of atomization.     

Compositional dependence of the optical parameters for Bi5GexSe65−x (30 ≤ x ≤ 45) films

Different compositions of Bi₅Ge_xSe_95−x (x = 30, 35, 40 and 45 at %) thin films were deposited onto cleaned glass substrates by thermal evaporation method. The structural characterization revealed that, the as-prepared films of x = 30, 35 and 40 at. % are in amorphous state but there are few tiny crystalline peaks of relatively low intensity for the film with x = 45 at. %. The chemical composition of the as-prepared Bi₅Ge_xSe_65−x films has been checked using energy dispersive X-ray spectroscopy (EDX). The optical properties for the as-deposited Bi₅Ge_xSe_65−x thin films have been studied. The additions of Ge content were found to affect the optical constants (refractive index, n and the extinction coefficient, k). Tauc’s relation for the allowed indirect transition is successfully describing the mechanism of the optical absorption. It was found that, the optical energy gap (E_g) decreases with the increase in Ge content. These obtained results were discussed in terms of the chemical bond approach proposed by Bicermo and Ovshinsky. The composition dependence of the refractive index was discussed in terms of the single oscillator model.     

Compositional dependence of the elastic constants and the Poisson ratio of GaxIn1−xSb

The pseudopotential method within the virtual crystal approximation combined with the Harrison bond-orbital model were used to determine all three elastic constants, and hence Poisson's ratio of Ga_xIn_1−xSb semiconductor alloys. Our results for parent compounds are compared to experiment and other theoretical calculations and showed generally good agreement. The effect of compositional disorder on the studied quantities has been examined. We found an important bowing in all elastic constants and bulk modulus versus Ga content. The Poisson ratio was found to be independent of alloy composition x.     

Crystallization kinetics of SbxSe100−x thin films

The crystallization kinetics in Sb_xSe_100−x films with 39≤x≤58is studied by monitoring the optical transmission of the films during both isothermal and constant rate heatings. The structure of the films upon crystallization and at certain intermediate stages is studied by electron microscopy techniques. The results are analyzed in the frame of the Johnson-Mehl-Avrami theory in order to determine the kinetic parameters (Avrami exponent, activation energy and frequency factor) in addition to the crystallization temperature. The results show that film crystallization is always preceeded by a relaxation process which modifies substantially the optical properties of the amorphous material. Amorphous films with compositions close to the stoichiometric compound (Sb₂Se₃) are found to show the highest activation energy for crystallization.     

Structural and optical properties of sintered ZnSxSe1−x films

Sintered ZnS_xSe_1−x films have been prepared in the entire composition range from ZnSe to ZnS by using the screen printing method. To deposit good quality films, optimum conditions have been determined. Wide band gap ternary films have wide applications in solar cells. The band gap of these films are determined by reflection spectra in the wavelength range of 325–600 nm using the Tauc relation. These films have a direct band gap, which varies from 3.50 eV for ZnS to 2.66 eV for ZnSe films. The wurtzite structure of ZnSSe films was confirmed by X-ray diffraction analysis of these films.     

Optical transitions near the band edge in bulk CuInxGa1−xSe2 from ellipsometric measurements

From the analysis of the variation of optical absorption coefficient with incident photon energy between 0.8 and 2.6 eV, obtained from ellipsometric data, the energy E_G of the fundamental absorption edge and E_G′ of the forbidden direct transition for CuIn_xGa_1−xSe₂ alloys are estimated. The change in E_G and the spin-orbit splitting Δ_SO=E_G′−E_G with the composition x can be represented by parabolic expression of the form E_G(x)=E_G(0)+ax+bx² and Δ_SO(x)=Δ_SO(0)+a′x+b′x², respectively. b and b′ are called “bowing parameters”. Theoretical fit gives a=0.875 eV, b=0.198 eV, a′=0.341 eV and b′=−0.431 eV. The positive sign of b and negative sign of b′ are in agreement with the theoretical prediction of Wei and Zunger [Phys. Rev. B 39 (1989) 6279].     

Photoelectrochemical investigations of n-CdSe1−xTex thin film electrodes

An electrode/electrolyte interface has been formed between an n-type CdSe_1−xTe_x (0≤x≤1) alloyed/mixed type semiconductor and a sulphide/polysulphide redox electrolyte. It has been investigated through the current–voltage, capacitance–voltage and spectrally selective properties. The dependence of the dark current through the junction and the junction capacitance on the voltage across the junction have been examined and analysed. It appeared that the current transport mechanism across the junction is strongly influenced by the recombination mechanism at the interface and series resistance effects. Upon illumination of the interface with a light of 20 mW cm⁻², an open circuit voltage of the order of 0.35 V and a short circuit current of 212 μA cm⁻² have been developed (for x=0.2), yielding an efficiency of energy conversion equal to 0.2% and a form factor of 45%. The action spectra in the 450–1000 nm wavelength range showed presence of the interface states at the electrode/electrolyte interface. The magnitudes of the barrier heights at the interfaces were also determined. It has been seen that a significant improvement in the electrochemical performance of a cell is noticed for the electrode composition with x=0.2.     

Strong magnetoelastic effect in Pr1−xCaxMnO3

Manganese oxides with distorted perovskite structure have attracted much attention during the last decade due to their colossal magnetoresistance (CMR), and the strong correlations among the various degrees of freedom involved. In particular, Pr_1−xCa_xMnO₃ compounds present in a wide Ca-doping range a charge ordering phenomenon, consisting of real space ordering of Mn³⁺ and Mn⁴⁺ in alternate lattice sites below a certain temperature T_CO. This ordering brings about a lattice distortion and a large hardening of the sound velocity below T_CO. Tomioka et al. have observed that an applied magnetic field can melt this charge ordered state and induce a transition from an insulating to a metallic state. In order to study the effects of this charge order melting, ultrasonic longitudinal sound velocity measurements were performed on polycrystalline Pr_1−xCa_xMnO₃ (x=0.35 and 0.5) as a function of magnetic field and temperature. Interesting anomalies were found related to the melting of the charge ordered phase into a metal-like state even at low temperatures.     

Combinatorial pulsed laser deposition and thermoelectricity of (La1−xCax)VO3 composition-spread films

La_1−xCa_xVO₃ composition-spread film library was fabricated by combinatorial pulsed laser deposition and their thermoelectric properties were evaluated paralelly by the multi-channel probes of Seebeck coefficient and electric conductivity. Concurrent X-ray analysis verified the formation of solid soluted films in the full composition range (0x1) as judged from the linear variation of the lattice constants. The Seebeck coefficients of La_1−xCa_xVO₃ changed from a large negative value to almost zero with the increase of x, due presumably to the variation of valence in vanadium ions.The power factor in this library was as high as 0.6 μW/cm K², which was obtained at x=0, i.e. pure LaVO₃ grown at 800 °C.     

The structural and electrical property of CuCr1 − xNixO2 delafossite compounds

A series of CuCr_1 − xNi_xO₂ (0 ≤ x ≤ 0.06) polycrystalline samples was prepared. The electrical conductivity was measured in the temperature range of 160–300 K. It was found that the electrical conductivity (σ) increases rapidly with the doping of Ni²⁺ ions. At room temperature, the σ is 0.047 S cm^− 1 for the sample with x = 0.06, which is two orders of magnitude larger than that of the CuCrO₂ sample (9.49E− 4 S cm^− 1). The Seebeck coefficients are positive for all samples, which indicate p-type conducting of the samples. The experimental results imply that it is possible to get higher electrical conductivity p-type transparent conducting oxides (TCO) from CuMO₂ by doping with divalent ions.     

Bond-lengths of the atomic nearest-neighbor and next-nearest-neighbor in A1−xBxC1−yDy III–V solid solutions

On the basis of the FDUC model and the hypothesis of the constant covalent radii, the expressions of the atomic nearest-neighbor and the next-nearest-neighbor bond-lengths were derived for A_1−xB_xC_1−yD_y III–V quaternary solid solutions. This set of bond-length expressions predicts the averaged bond-lengths and bond angles at any concentration (x, y) for the III–V pseudobinary and quaternary solid solutions, which are only dependent on the lattice parameters and the concentrations of the pure end compounds. When x=0, 1 or y=0, 1, A_1−xB_xC_1−yD_y III–V quaternary solid solutions degenerate into the relative pseudobinary solid solutions, in which the nearest-neighbor and the next-nearest-neighbor bond-lengths agree well with the experimental results. Further discussion and comparison with other theoretical models are also given in this paper.     

Phase relations, lattice thermal expansion in Ce1−xEuxO2−x/2 and Ce1−xSmxO2−x/2 systems and stabilization of cubic RE2O3 (RE: Eu, Sm)

The phase relations in CeO₂–Eu₂O₃ and CeO₂–Sm₂O₃ systems have been established under slow-cooled conditions from 1400 °C. The two-phase relations differ as the CeO₂–Eu₂O₃ system showed only two monophasic phase fields, namely F-type cubic and C-type cubic, whereas CeO₂–Sm₂O₃ system showed three phase fields namely F-type cubic, C-type cubic and a biphasic field comprising of C-type cubic and monoclinic phase. An interesting observation of this investigation is the stabilization of C-type rare-earth oxide after Ce⁴⁺ substitution, which is attributed to decrease in average cationic size on Ce⁴⁺ substitution at RE³⁺ site. The lattice thermal expansion behavior of F-type solid solution and C-type solid solution in CeO₂–Eu₂O₃ system was investigated by high-temperature XRD.     

Composition and substrate temperature dependence of structural and optical studies on ZnSexCdS1−x alloy films

Thin (t−0.60 μm) films of ZnSe_xCdS_1−x were formed by vacuum evaporation on glass substrates held at 350 and 470 K. XRD studies showed that all the films were polycrystalline in nature. Films with x0.70 were hexagonal whereas films with x0.80 were cubic in structure. The structural transition was in the range 0.70<x<0.80. The lattice parameter was higher in films formed at a higher temperature. The lattice parameter followed Vegard's law. Grain size increased with substrate temperature. From the optical transmission spectra recorded in the wavelength range 300–2500 nm, the extinction coefficient, refractive index and band gaps were obtained. Band gap values showed a downward bowing with ‘x' with a bowing parameter of 0.40 eV.     

Physical and electrical properties of thin films produced by Low Energy Cluster Beam Deposition of mixed InxSb1−x clusters

We present a new gas-aggregation cluster source with two independent crucibles, one for indium and another one for antimony. This source was used to produce mixed In_xSb_1−x clusters in the nanometer range size (typically 4 nm), which were deposited at room temperature on amorphous carbon or glass substrates by low energy cluster beam deposition technique (LECBD). The film composition was analysed by energy dispersive X-ray (EDX) spectroscopy. The morphology and structure of the films were studied by transmission electron microscopy (conventional and high resolution) and selected area electron diffraction (SAED) at different compositions. Semiconducting InSb clusters could be produced by controlling the temperature of the two crucibles. The electrical properties of the films were studied at a film thickness of 20 nm. The conductivity versus temperature appeared to be thermally activated for all compositions.     

Magnetism in Si1 − xMnx diluted magnetic semiconductor thin films

We have studied the electrical and magnetic properties of p-type semiconductor thin films of Si_1 − xMn_x/Si (x = 0.036 and 0.05) grown by molecular beam epitaxy. Experimental results reveal that the resistivity of the samples decreases gradually with increasing measurement temperature, which can be described well by Mott's variable-range-hopping model. All the samples exhibit the ferromagnetic ordering above room temperature. Among these samples, Si_0.95Mn_0.05 has a higher hole density and magnetization. This indicates an enhancement of hole-mediated ferromagnetic exchange interactions when the Mn-doping concentration is increased.     

Combinatorial synthesis and rapid characterization of Mo1−xSnx (0x1) thin films

Thin films of Mo_1−xSn_x, continuously and linearly mapped for 0<x<1, have been prepared by d.c. magnetron sputter deposition under various growth conditions. X-ray diffraction results indicate that as x in high-pressure deposited Mo_1−xSn_x increases from 0 to approximately 0.45, the bcc lattice expands and no new phases are formed. At low deposition pressures, Mo₃Sn, a β-tungsten structured phase, is formed along with the bcc Mo–Sn solid solution for 0.1<x<0.3. The variation of the lattice parameter for this intermetallic phase also indicates that solid solutions, possibly of the form Mo_3+ySn, are being formed. These materials are of special interest as anode candidates in lithium-ion batteries.     

Random stacking in MoS2−x sputtered thin films

The structure of sputter-deposited MoS_2−x films is investigated by X-ray and electron diffraction. The diffraction spectra show important differences with respect to those of known molybdenite phases. These differences are interpreted in terms of the random-layer model usually applied to turbostratic carbon. Peak profile calculations are performed following an extension of Wilson's model, taking into account the structure factor. They show that the crystal structure of these films consists in a random stacking of S---Mo---S layers, without evidence of 2H or 3R polytypism.     

Photoconductors based on ZnxCd1−xS and CdSe1−ySy thin films, fabricated with multilayer structure

Photoconductors based on evaporated Zn_xCd_1−xS and CdSe_1−yS_y thin films, with a novel multilayer structure, were fabricated and characterized through spectral response measurements. The device structure is constituted by several layers of different energy gaps, sequentially deposited side by side and interconnected in series or in parallel. The influence of the preparation conditions, number of layers and electrode configuration, on the performance of the photoconductors was determined. Photoresistors with a detection range between 400 and 750 nm were developed, using four layers with energy gaps varying between 1.8 eV and 2.8 eV and interconnected in parallel.     

Phase formation process of IrxSi1−x thin films Structure and electrical properties

Experimental data on the phase formation process of amorphous Ir_xSi_1−x thin films with 0.30 ≤ x ≤ 0.41 are presented and discussed in relation to electric transport properties. The structure formation process at temperatures from 300 K up to 1223 K was investigated by means of X-ray diffraction. Distinct phases were observed in the final stage in dependence on the initial composition: Ir₃Si₄, Ir₃Si₅, and IrSi₃. An unknown metastable phase was found in films with a silicon concentration of 61 at.% to 64 at.% after annealing above the crystallization temperature T = 970 K. The crystal structure of this phase was determined by the combined use of X-ray diffraction and electron diffraction. It was found to be monoclinic, basic-face centred with lattice constants a = 1.027 nm, b = 0.796 nm, c = 0.609 nm, and γ = 113.7°. Additionally, microstructure and morphology of the films were investigated by transmission electron microscopy (TEM). The annealing process was studied by means of mechanical stress investigations as well as by electrical resistivity and thermopower measurements. Correlations between the structure, the phase formation and the electrical transport behaviour are discussed on the basis of conduction mechanism.     

Nucleation and evolution of Si1−xGex islands on Si(001)

In this study, we report a systematic investigation of the metastable morphologies of Si_1−xGe_x layers obtained by the interplay of kinetics and thermodynamics during growth on Si(001). We show that three main growth regimes can be distinguished as a function of the misfit and of the deposited thickness. They correspond to three equilibrium steady state morphologies that consist of (105)-facetted hut islands, huts and domes in co-existence, and a bimodal size distribution of domes, respectively. The shape transitions between these states are attributed to different levels of relaxation.