Electrical and Dielectric Characterizations of Cu2ZnSnSe4/n-Si Heterojunction

Silicon - Cu2ZnSnSe4 (CZTSe) thin film has been synthesized onto silicon substrates by liquid phase epitaxial growth for the first time in which Au/CZTSe/n-Si/Al heterojunction was successfully...     

Fabrication and Electrical Characteristics of Thioindigo/Silicon Heterojunction

We demonstrate the performance of heterojunction thin films of thioindigo on Silicon which fabricated by using thermal evaporation technique under high vacuum (10^??4 Pa). The dark current–voltage (I–V) characteristics measurement at different temperatures in the range 303–383 K were analyzed in order to explain the conduction mechanism and to evaluate the important device parameters The calculated ideality factor (n) and zero-bias barrier height (φ_o) showed strong bias dependence. The predominant mechanism of charge transport in thioindigo on silicon was found to be thermionic emission at low voltage and space charge limited conduction, SCLC dominated by single trap distribution at the higher voltage. At reverse applied voltage, it is found that p-Si is the main source of the reverse current due to generation-recombination. The capacitance–voltage (C–V) characteristics of in these devices were measured at high frequency (1 MHz). The dependence of C^??2 vs. V for the heterojunctions for thioindigo/Si was found to be almost linear which indicates an abrupt heterojunction and (C-V) parameters was obtained. The parameter of I–V characteristics under white illumination was calculated.     

Ag/AgCl/Bi_2MoO_6异质结的制备及其可见光光催化性能的研究

采用简易的沉积-光还原的方法将Ag/Ag Cl纳米粒子负载到Bi2Mo O6微球上,制得Ag/Ag Cl/Bi2Mo O6异质结。分别采用XRD、SEM和UV-vis DRS对样品进行了表征。以罗丹明B(Rh B)为模拟污染物,考察样品的可见光光催化活性。结果表明,相比于Ag/Ag Cl和Bi2Mo O6,Ag/Ag Cl/Bi2Mo O6异质结的可见光催化活性明显提高,且Ag/Ag Cl负载量为40 wt%时,复合物的光催化活性最高。     

Er,Yb:CaF2透明陶瓷的制备及其性能研究

首先以(Ca(NO3)2·4H2O、Er(NO3)3·5H2O、Yb(NO3)3·5H2O和KF·2H2O等试剂为原料,选择化学沉淀法合成了Er,Yb:CaF2纳米粉体,采用XRD和FE-SEM技术对纳米粉体特性进行了测试与表征.以合成的纳米粉体为原料,采用真空热压烧结技术,在800℃、30 MPa条件下制备了Er,Yb:CaF2透明陶瓷,并对陶瓷样品的元素组成与分布、显微结构及热导率等特性进行了测试与表征.结果表明:合成的Er,Yb:CaF2纳米粉体为单相立方萤石结构,平均尺寸在20～40 nm,并易形成尺寸为3～5μm的团聚体;Er与Yb元素在陶瓷样品中分布均匀,陶瓷的平均晶粒尺寸为1μm左右,并由于不均匀烧结,样品中存在大尺寸的孔洞结构,随着Yb掺杂浓度的增加,陶瓷样品的热导率逐渐降低.     

双钙钛矿La2NiMnO6/Si薄膜异质结的电学特性研究

通过激光脉冲沉积法(PLD)在Si衬底上沉积了双钙钛矿结构La2 NiMnO6(LNMO)薄膜.用HP4284A LGR仪等分析测试手段研究了薄膜异质结的电流-电压特性和电容-电压特性.结果表明LaNiMnO6/Si异质结也表现出了与传统相似的P-n整流特性.     

In Situ Fabrication of 1D WO3 Nanorod/2D ZnWO4 Nanosheet Heterojunction for Enhanced Photoelectrochemical Performance

Catalysis Letters - The 1D WO3 nanorod/2D ZnWO4 nanosheet heterojunction arrays were successfully fabricated by combining a facile hydrothermal and in situ solvothermal growth reaction. The...     

Electrical and Interfacial Properties of an Antipyrine Derivative/p-Si Heterojunction

Electrical properties of a Au/N-(5-{cyano-[(1,5-dimethyl-3-oxo-2-phenyl-2,3-dihydro-1H-pyrazol-4-yl)-hydrazono]-methyl}-[1,3,4]thiadiazol-2-yl)-benzamide (ACTB)/p-Si/Al heterojunction have been investigated by using current-voltage (I-V) and capacitance-voltage (C-V) measurements. At forward voltages V≤0.36 volt, thermionic emission theory was used to determine the ideality factor and zero-bias barrier height of the device. Although, the device is found to be nonideal in showing an ideality factor of 1.84, it is found to have a modified barrier height value (0.71 eV) compared to a conventional Au/p-Si contact. Cheung functions were used to obtain the barrier height, series resistance and ideality factor of the diode. The current is found to be controlled by the space charge limited current (SCLC) dominated by exponential trap distribution in the voltage range 0.36<V≤1.56 and SCLC dominated by a single trap in the voltage range 1.56<V ≤2. The I-V characteristics in the reverse direction are analyzed in terms of Poole–Frenkel and Schottky mechanisms. C-V characteristics show that the junction is of an abrupt nature in which the built-in potential, barrier height and charge carrier concentration are estimated. Based on combined I-V and C-V characteristics, the interface state density of the heterojunction has also been calculated. The ACTB film can be used in the device modification applications of the conventional Au/p-Si diodes.     

Fabrication, Mechanical Properties, and Electrical Conductivity of Co3O4 Ceramics

Well-densified Co₃O₄ ceramics (98.3% of theoretical) have been fabricated by the combined use of hot pressing (800°C/I h/30 MPa) and hot isostatic pressing (880°C/2 h/196 MPa). Their Vickers hardness and fracture toughness are 10.3 GPa and 4.2 MPa·m^1/2, respectively. They exhibit a high electrical conductivity of 3.35 × 10' S·cm⁻¹ at 800°C.     

恒电流法制备Cu2O/TiO2复合纳米管阵列异质结光电极

通过在含F-离子的电解液中阳极氧化Ti薄片基底制备了TiO2纳米管阵列,随后通过恒电流沉积的方法在在TiO2纳米管阵列顶部原位电沉积了Cu2O纳米颗粒。场发射电子扫描显微镜显示TiO2纳米管这列被成功制备,通过恒电流电化学沉积后,TiO2纳米管阵列顶部出现大量纳米颗粒物质,并且随着沉积时间的延长,可以控制沉积物的量。通过X-射线衍射谱的特征衍射谱图我们可以发现TiO2锐钛矿的衍射峰以及相对较弱的Cu2O衍射峰,这说明Cu2O晶体的结晶度不高。在能谱（EDS）图中我们可以发现Ti、Cu、O三种元素,结合XRD以及FE-SEM结果我们可以指出,通过恒电流法确实可以在TiO2纳米管阵列顶部原位沉积Cu2O纳米颗粒。     

Enhanced Photoluminescence and Electrical Properties of n-Al-Doped ZnO Nanorods/p-B-Doped Diamond Heterojunction

The hydrothermal approach has been used to fabricate a heterojunction of n-aluminum-doped ZnO nanorods/p-B-doped diamond (n-Al:ZnO NRs/p-BDD). It exhibits a significant increase in photoluminescence (PL) intensity and a blue shift of the UV emission peak when compared to the n-ZnO NRs/p-BDD heterojunction. The current voltage (I-V) characteristics exhibit excellent rectifying behavior with a high rectification ratio of 838 at 5 V. The n-Al:ZnO NRs/p-BDD heterojunction shows a minimum turn-on voltage (0.27 V) and reverse leakage current (0.077 μA). The forward current of the n-Al:ZnO NRs/p-BDD heterojunction is more than 1300 times than that of the n-ZnO NRs/p-BDD heterojunction at 5 V. The ideality factor and the barrier height of the Al-doped device were found to decrease. The electrical transport behavior and carrier injection process of the n-Al:ZnO NRs/p-BDD heterojunction were analyzed through the equilibrium energy band diagrams and semiconductor theoretical models.     

ZnO/CuO/CeO2异质结的构建及其光降解性能与抗菌性能

采用溶液法将ZnO与CuO、CeO_2复合构建了一种新型Z型异质结ZnO/CuO/CeO_2,通过XRD、XPS、SEM、TEM、UV-Vis及PL等方法对其物化和光学性质进行了表征,并探讨了其降解亚甲基蓝的可能机制。结果表明,ZnO/CuO/CeO_2为分层孔状结构,具有较大的孔隙率和较多的反应位点,ZnO与CuO、CeO_2形成了Z型异质结结构,提高了ZnO/CuO/CeO_2对可见光吸收能力,并促进了光生电子-空穴的分离,从而有效增强了ZnO/CuO/CeO_2的光降解性能和抗菌性能。在可见光照射下,ZnO/CuO/CeO_2异质结对亚甲基蓝的降解行为遵循一级反应动力学,其反应速率常数分别是ZnO和ZnO/CuO的2.03倍和1.26倍,其灭菌率分别是ZnO和ZnO/CuO的1.57倍和1.10倍。     

Photoconducting and Photovoltaic Properties of ZnO:TiO<Subscript>2</Subscript> Composite/p-Silicon Heterojunction Photodiode

A photodiode based on titanium dioxide:zinc oxide (TiO₂:ZnO) was fabricated to be used in optoelectronics applications. The TiO₂:ZnO composite film was prepared by the sol-gel method. The structural properties of the composite film were analyzed by scanning electron microscopy and X-ray diffraction techniques. It is seen that the film is formed from the nanoparticles. The photoresponsivity properties of the TiO₂:ZnO composite film/p-type silicon diode were analyzed by phototransient current and photocapacitance techniques. The diode exhibited an optoelectronic device with obtained photovoltaic and photocapacitance behaviors. It is evaluated that the TiO₂:ZnO composite film/p-type silicon diode can be used as a optoelectronic device in optic communications and photoelectric applications.     

ZnO/ZnS异质结构纳米棒的制备及性能研究

本文利用低温二步水热法在ITO玻璃衬底上制备了ZnO/ZnS异质结构纳米棒,研究和比较了Zn O纳米棒和ZnO/ZnS异质结构纳米棒的形貌,结构和光学等特性。结果表明:未掺杂的ZnO纳米棒具有明显的六角结构表面,良好的晶体结构和c轴生长取向;ZnO/ZnS异质结构纳米棒的形貌和光学性质都发生了变化,纳米棒直径变化范围大,六角结构表面六边形不规则,且引入了较多的深能级缺陷。     

Fabrication,Physicochemical Characterizations and Electrical Conductivity Studies of Modified Carbon Nanofiber-Reinforced Epoxy Composites: Effect of 1-Butyl-3-Methylimidazolium Tetrafluoroborate Ionic Liquid

This study presents the fabrication of carbon nanofiber-reinforced epoxy nanocomposites using 1-butyl-3-methylimidazolium tetrafluoroborate ionic liquid as filler dispersant. FTIR and XRD measurements were utilized to assess structural attributes and crystallographic change in the composites. In addition, morphological studies were performed by field emission scanning electron microscope while the extent of miscibility between epoxy and IL was computed by Accelrys Materials Studio Software. The conductivity measurement was performed by two point impedance analyzer and result demonstrated increase in the electrical conductivity from ～10^?7 to ～10^?5?S?cm^?1 compared to pristine epoxy composite.     

火焰喷涂聚酰胺12/n-SiO2复合涂层工艺及性能

采用火焰喷涂法制备了聚酰胺12(PA12)及聚酰胺12/纳米SiO2(n-SiO2)复合涂层,并利用电子拉力机、摩擦磨损试验机、红外光谱仪(FTIR)和示差扫描量热仪(DSC)等对涂层的结构与性能进行了研究.红外光谱分析表明PA12及PA12/n-SiO2粉末在火焰喷涂过程中没有发生氧化或降解反应,表明火焰喷涂法适宜制备PA12及PA12/n-SiO2复合涂层;DSC分析结果表明n-SiO2具有成核剂作用,能提高PA12大分子的结晶速度及结晶度;涂层力学性能及摩擦磨损性能分析表明n-SiO2能提高涂层的力学性能,改善涂层的耐老化性能和摩擦磨损性能.当n-SiO2添加量为1.5%(质量)时,涂层综合性能最佳.     

Detailed Consideration of Electrical and Dielectric Properties of Au/Ni/n-Si MS Structure in a Wide Frequency Range

Silicon - In the presented study, the electrical and dielectric properties of Au/Ni/n–Si MS structure are examined in detail by performing frequency–dependent admittance spectroscopy...     

Fabrication of High Responsivity for MgO NPs/PSi Heterojunction Device by Sol-Gel Technique

Silicon - In this work, porous silicon was preparation by electrochemical etching and the MgO thin film by sol-gel technique. The structural properties of MgO NPs were studied using XRD and the...     

Distribution of interface traps in Au/2% GC-doped Ca3Co4Ga0.001Ox/n-Si structures

This study presents voltage-dependent profile of interface traps in Au/n-Si structure with 2% graphene–cobalt-doped Ca₃Co₄Ga_0.001O_x interfacial layer. Admittance measurements revealed capacitance-voltage (C-V) plots with typical regions of a metal–insulator–semiconductor structure through inversion, depletion, and accumulation regions. Frequency dispersion is observed in C-V plots and such behavior was explained with excess capacitance, which is associated with the density of interface traps (D_it) in the structure because larger D_it is observed when the measurements are held at low frequencies due to the fact that traps can follow the signal depending on their lifetime. D_it was also obtained using conductance method, which also provided lifetime of the traps. The difference between the values of D_it was attributed to the difference in extraction methods. Obtained results showed that Au/2% graphene–cobalt-doped Ca₃Co₄Ga_0.001O_x/n-Si structure yields promising electrical characteristics when the structure is operated at high frequencies. © 2019 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2020 , 137, 48399.     

Electrical properties of nitric acid and DMSO treated PEDOT:PSS/n-Si hybrid heterostructures for optoelectronic applications

Organic/inorganic heterostructures are an emerging and interesting field of research for optoelectronics. In this work, an efficient organic/inorganic hybrid heterojunction between PEDOT:PSS and n-type Silicon has been fabricated for optoelectronic applications. Samples with varying thickness of PEDOT:PSS were prepared by spin coating technique and the electrical conductivity of organic layers was modified using DMSO as additive. Post fabrication, the hybrid heterostructures were treated with HNO₃ vapor so as to enhance the conductivity of the organic layer. Surface treatment with HNO₃ was found to lower the roughness of the organic layer and enhance the transparency of the layer. I–V characteristics reveal optimized behavior of HNO₃ treated PEDOT:PSS layer with a low Ideality factor (n~3.2) and a barrier height (Φ_B) of 0.8 eV. The findings of the study provide a promising efficient method to enhance the electrical and device properties of PEDOT:PSS/n-Si heterostructures for optoelectronic applications. © 2020 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2020 , 137, 48952.