Improving the quality factor of an RF spiral inductor with non-uniform metal width and non-uniform coil spacing

An improved inductor layout with non-uniform metal width and non-uniform spacing is proposed to increase the quality factor(Q factor).For this inductor layout,from outer coil to inner coil,the metal width is reduced by an arithmetic-progression step,while the metal spacing is increased by a geometric-progression step. An improved layout with variable width and changed spacing is of benefit to the Q factor of RF spiral inductor improvement(approximately 42.86%),mainly due to the suppression of eddy-current loss by weakening the current crowding effect in the center of the spiral inductor.In order to increase the Q factor further,for the novel inductor, a patterned ground shield is used with optimized layout together.The results indicate that,in the range of 0.5 to 16 GHz,the Q factor of the novel inductor is at an optimum,which improves by 67%more than conventional inductors with uniform geometry dimensions(equal width and equal spacing),is enhanced by nearly 23%more than a PGS inductor with uniform geometry dimensions,and improves by almost 20%more than an inductor with an improved layout.     

非均匀金属线宽和线间距射频螺旋电感品质因子的改善

为了提高品质因子Q,本文提出了一种非均匀金属条宽和非均匀条间距的改进电感结构。从外圈到里圈,改进的电感金属线宽按等差数列逐渐减小,金属间距按等比数列增加。因为该渐变结构有效减弱了线圈中心电流拥挤导致的涡流效应,所以改进结构电感的Q因子大幅度提高（幅值高达42.86%）。为了进一步增大Q因子,新型电感同时采用图形化接地保护结构（PGS）与渐变结构。结果显示,在0.5GHz到16GHz的射频频段内,结合两种技术的新型电感的品质因子Q最优,与固定金属线宽和间距的传统电感相比,Q提高了67%;与仅采纳PGS结构的电感相比,Q提高了23%;与仅采用渐变金属结构的电感相比,Q提高了20%。     

Wing-shaped antenna with two-port configuration for multi-band mobile communication systems

A two-port wing-shaped antenna has been designed for small mobile devices. The proposed antenna system is composed of two wing-shaped antenna elements with different wing size. The two wing-shaped elements make it possible for a mobile device to cover all current and next mobile services such as GSM 850/900, DCS, PCS, Mobile WiMax (Wibro), and 802.11a/b/n. Moreover, the excellent isolation between the two antenna elements is achieved by designing the wings with opposite current flow. The proposed antenna system has potential for achieving any frequency bands in commercial use.     

Fabrication and performance of a novel suspended RF spiral inductor

A novel suspended radio frequency (RF) spiral inductor was fabricated on glass substrate by using the microelectromechanical systems (MEMS) technology. The suspended spiral inductor is sustained with the T-shaped pillars. Great improvements in Q-factor have been achieved because of the separation between the substrate and the inductor. In the fabrication process, fine polishing of the photoresist is used to simplify the processes and ensure the seed layer and the pillars contact perfectly, and dry etching technique is used to remove the seed layer. The inductance and Q-factor are measured using the HP 8722D network analyzer in the frequency range of 0.05-10 GHz. The maximum quality factor of this inductor is 37 for the inductance of 4.2 nH with a suspended height of 60 /spl mu/m. Also, the relationship between the maximum quality factor and the suspended height were studied; the maximum quality factor grows gradually with the increase of the suspended height.     

S参数的损耗因子及数据处理

在二端口微波网络测量过程中,随机误差是引起测量误差的主要因素之一,并导致S参数不满足能量守恒定理。因此,定义S参数前向、后向损耗因子,直观反映测量系统的能量损耗分布情况。同时,通过构建频域测量系统方程,采用Kalman数据估计方法有效地降低了损耗因子,提高了数据测量精度。     

Micromachined planar spiral inductor in standard GaAs HEMT MMICtechnology

A novel free-standing planar spiral inductor with reduced parasitic capacitances is proposed by suspending individually the strips, through a maskless front-side bulk micromachining compatible with a commercial GaAs HEMT monolithic microwave integrated circuit (MMIC) technology. Suspended structures have been fabricated and characterized at frequencies up to 15 GHz, showing quality factors of up to 16 and self-resonant frequency superior to 16 GHz for a 4.8 nH inductor. Moreover, since the standard IC process as well as the unconcerned electronic circuits are not influenced by micromachining, such devices are directly useful to enhance RF circuits, like matching networks, filters, and low-noise amplifiers     

Low-loss active inductor with independently adjustable self-resonance frequency and quality factor parameters

This work presents a new low-loss active inductor whose self-resonance frequency and quality factor parameters can be adjusted independently from each other. In order to achieve this property, a new input topology has been employed which consists of cascode structure with a diode connected transistor. Furthermore, the proposed input topology makes the device robust in terms of its performance over variation in process, voltage and temperature. Additionally, RC feedback is used to cancel series-loss resistance of the active inductor, which allows self-resonant enhancement as well. Schematic and post-layout simulation results show the theoretical validity of the design. To validate the design feasibility for process, voltage and temperature changes, Monte Carlo and temperature analysis are done. Suggested structure shows inductor behavior in the frequency range of 0.3–11.3 GHz. Maximum quality factor is obtained as high as 2.1k at 5.9 GHz. Total power consumption is as low as 1 mW with 1.8 V power supply.     

Equivalent circuit of microstrip spiral inductor circuit generation by computer

A method of equivalent circuit generation by computer is illustrated using a microstrip spiral inductor as an example. The computer program modifies the circuit topology, adding nodes and components as necessary. Results are compared with a model derived from physical considerations and show a great improvement in performance for a small increase in complexity.     

A generalized network formulation for aperture problems

A general formulation for aperture problems is given in terms of the method of moments. It applies to any two regions isolated except for coupling through the aperture. The aperture characteristics are expressed in terms of two aperture admittance matrices, one for each region. The admittance matrix for one region is independent of the other region, and hence can be used for any problem involving that region and aperture. The solution can be represented by two generalizedn-port networks connected in parallel with current sources. The current sources are related to the tangential magnetic field which exists over the aperture region when the aperture is closed by an electric conductor. Formulas for fields (linear functionals) and power (quadratic functionals) are given in terms of the admittance matrices.     

A closed-form integral model of spiral inductor using the Kramers-Kronig relations

In this letter, a closed-form integral model is presented for the rectangular micromachined spiral inductor. The Kramers-Kronig relations provide an elegant theory to describe the inductor behavior without having complicated geometric analysis. Simulation and measurement results validate that the model can provide satisfactory prediction to the inductance of on-chip freely-suspended spiral inductors. Meanwhile, unlike conventional Greenhouse-based formulations, the self-resonant frequency of inductor can be predicted using the integral model.     

Miniaturisation and high quality factor of spiral meander spurline resonator for microwave oscillator

The spiral meander spurline structure is an optimal solution for a reduced resonator size and a high Quality factor (Q-factor) compared to other conventional spurline structures. The spiral meander spurline resonator shows not only 38% reduced dimensional effect, but also 16% improved Q-factor compared with conventional meander spurline resonator. Moreover, in order to get more high quality factor, we analysed spurline slot width variation and designed the symmetric dual spiral meander structure, which has a 46.87% improved Q-factor compare with a single spiral meander. The symmetric dual spiral meander structure resonator performance results are shown in a return loss of ?0.76?dB, an insertion loss of ?46.32?dB, and a quality factor of 235 at 6.4?GHz C-band application. In addition, according to the design and performance of the resonator, we can derive from this performance a low phase noise oscillator. The oscillators using symmetric dual spiral meander structure resonator shows good phase noise performances of ?104.43?dBc/Hz at a 100?kHz offset from the carrier frequencies of 6.38?GHz at output powers of 12.2?dBm, respectively.     

A simple systematic spiral inductor design with perfected Q improvement for CMOS RFIC application

In this paper, a systematic design procedure based on key factor analysis of the Q curve has been proposed. In addition to inductor design, we also present a technique that combines optimized shielding poly, and proton implantation treatment is utilized to improve the inductor Q value. The shielding effect of poly-silicon and the semi-insulating characteristics of proton-bombarded substrate have added a 37% and 54% increment to the Q value of the inductors, respectively. The combination of the two means has created a multiplication of their individual contribution rather than addition. The dramatic improvement of the Q value resulted from the doping level and film thickness optimization of a poly shield layer combined with a proton implantation treatment. A phenomenal Q-value increment as high as 122% of 4-nH spiral inductors can be realized. This technique shall become a critical measure to put inductors on a silicon substrate with satisfactory performance for Si-based RF integrated-circuit applications     

Analytical optimization of high-performance and high-yield spiral inductor in integrated passive device technology

The analytical optimization of several spiral inductors with different inner diameters, line widths, coil spacing, turn numbers, ring shapes, metal thicknesses, and substrates was performed by the measurement-derived inductance and Q-factor. Through the analytical optimization, a thick electroplated Cu/Au metal process and an additional sputter-etching strategy on a 200 μm finished SI-GaAs substrate with the suitable layout parameters have been proposed in order to obtain the higher performance and yield for the spiral inductors. The proposed physical layouts and fabrication parameters are an optimal solution for manufacturing spiral inductors in the integrated passive device (IPD) process that require high performance, stringent size, and volumetric efficiency.     

Invariant of a noisy two-port

A recent paper (see abstr. B3611 of 1968) is extended to show the existence of a quantity associated with a noisy two-port that is invariant under lossless transformation. The transforming network may be reciprocal or nonreciprocal.     

Rigorous Q-factor formulation for one- and two-port passive linear networks from an oscillator noise spectrum viewpoint

This brief characterizes one- and two-port passive networks from the viewpoint of oscillator design. A linear circuit theory derives the spectral spread due to RF noise from active devices. The formulation finds a frequency derivative function of logarithmic immittance that plays the key role of dominating the spectrum behavior. This leads to an explicit definition of the Q factor by referring to Leeson's basic oscillator model. The derived definition can provide an effective criterion for circuit topology and parameter optimization in low-noise oscillator design.     

Efficient optimization of integrated spiral inductor with bounding of layout design parameters

In this paper we present an efficient method of determining the optimized layout of on chip spiral inductor. The method initially identifies the feasible region of optimization by developing layout design parameter bound curves for a large range of physical inductance values that satisfies the same area specification. For any desired inductance value the upper and lower bounds of the optimization variables are determined graphically. An enumeration algorithm implemented finds the global optimum layout that gives the highest quality factor in less than 1 s of CPU time with less function evaluations. The optimization method also gives the performance of all possible combinations that results the same inductance value. Subsequently important fundamental tradeoff of the design like quality factor and area, quality factor and inductance, quality factor and operating frequency, maximum quality factor and the peak frequency is explored in few seconds. The method also gives other valuable information such as sensitivity of the inductance and quality factor to the layout design parameters. The accuracy of the proposed method is verified using a 3D electromagnetic simulator.     

高Q值平面螺旋电感的多电流路径结构设计

通过将平面螺旋电感器中的单股宽导线分成并联的多条细导线而在电感中形成多电流路径结构,可以降低电感的高频损耗并提高其品质因数(Q值)。利用HFSS电磁仿真软件对具有多电流路径结构的螺旋电感进行了设计与优化。结果表明,在尺寸不变的情况下,采用了多电流路径结构的平面螺旋电感的Q值提高了80%以上,这为高Q值小型平面螺旋电感的研制提供了思路。     

Immittance transformation chart of a two-port

The immittance transformation chart of a two-port which is used together with the Smith chart to obtain graphically the immittance transformed through a two-port is presented.     

Design and modeling of a micromachined high-Q tunable capacitor with large tuning range and a vertical planar spiral inductor

In wireless communication systems, passive elements including tunable capacitors and inductors often need high quality factor (Q-factor). In this paper, we present the design and modeling of a novel high Q-factor tunable capacitor with large tuning range and a high Q-factor vertical planar spiral inductor implemented in microelectromechanical system (MEMS) technology. Different from conventional two-parallel-plate tunable capacitors, the novel tunable capacitor consists of one suspended top plate and two fixed bottom plates. One of the two fixed plates and the top plate form a variable capacitor, while the other fixed plate and the top plate are used to provide electrostatic actuation for capacitance tuning. For the fabricated prototype tunable capacitors, a maximum controllable tuning range of 69.8% has been achieved, exceeding the theoretical tuning range limit (50%) of conventional two-parallel-plate tunable capacitors. This tunable capacitor also exhibits a very low return loss of less than 0.6 dB in the frequency range from 45 MHz to 10 GHz. The high Q-factor planar coil inductor is first fabricated on a silicon substrate and then assembled to the vertical position by using a novel three-dimensional microstructure assembly technique called plastic deformation magnetic assembly (PDMA). Inductors of different dimensions are fabricated and tested. The S-parameters of the inductors before and after PDMA are measured and compared, demonstrating superior performance due to reduced substrate loss and parasitics. The new vertical planar spiral inductor also has the advantage of occupying much smaller silicon areas than the conventional planar spiral inductors.     

A simple CMOS process compatible high performance parallel-stacked spiral inductor for advanced RF analog circuit applications

A high Q on-chip inductor with some unique structures has been fabricated with 0.13 μm CMOS compatible process for the first time. The unique structures including parallel stacked, line via between inter-metal layers, and use the top signal pad as the under path of the inductor instead of conventional bottom signal pad. These structures offer advantages of reducing resistance, high Q value, simple preparing process and small chip area. Experimental results show that the measured peak Q and peak-Q frequency can attain 7.06 and 1.8 GHz, respectively for the structure with four metal layers in parallel, 15 μm in metal width, 5.5 turns in wire number,and an area of 204×240 μm². The results have a better potential for advanced mobile communication applications.