基于FPGA和TS201链路口的多通道数据采集系统设计

设计了一个基于TS201高速链路口的多通道数据采集系统。其中FPGA作为主控器件控制AD的数据采集,并把多通道数据整序通过链路口实时地送到TS201中。有效缓解了在多DSP共享总线平台上多通道数据采集系统引起的总线冲突,提高了信号处理平台的整体性能。     

基于FPGA的DSP链路口通信及数据转换的设计与实现

用FPGA设计并实现了与DSP链路口的通信,同时进行了数据格式的转换。该设计是基于Altera公司的cy-clone芯片,能很好地与AD公司TS101型DSP芯片的链路口进行数据传输。该设计已成功应用于信号处理机中。     

一种二维有源相控阵雷达信号处理机的设计

为了满足二维有源相控阵雷达信号处理机快速和实时性的需求,本文设计和实现了一种基于DSP和FPGA的二维有源相扫雷达信号处理机.本信号处理机采用多核DSP搭配FPGA的设计架构,实现了高性能实时信号处理平台,可满足雷达系统算法需求,具有较高的实用性.     

一种雷达通用信号处理系统的实现与应用

鉴于FPGA和DSP各自的优势,FPGA+DSP信号处理架构,已成为信号处理系统的常用结构.但目前此结构处理平台功能固定、通用性差,或对平台的介绍缺乏具体实现.文中针对以上两点提出一种通用信号处理系统,该系统不仅将两种处理器的优点集于一身,并且具有很强的通用性,可以应用于不同的雷达系统.最后分别列举了该系统在连续波雷达...     

基于OMAP5912的语音采集系统的设计与实现

随着DSP及语音信号处理技术的发展,DSP已经成为语音信号处理的基本工具.基于不同型号的DSP,可以设计出多种语音采集系统.首先介绍OMAP5912和CODEC芯片TLV320AIC23的特性,然后设计了一种基于这两种芯片的语音采集系统.该系统已经在硬件平台上得以实现,实践证明,该系统具有很高的效率,能够满足实时信号处理的要求,可以作为一种语音信号处理进行算法研究和实时实现的通用平台.     

一种基于StarFabric总线的通用信号处理平台设计

基于共享总线(CPCI或VME)的信号处理模块由于共享总线带宽逐渐成为提升信号处理系统性能的瓶颈,开关互连技术是新一代信号处理系统互连的趋势。给出了一种基于StarFabric总线的多DSP构成的通用信号处理平台设计,突破了这种设计瓶颈,能满足多种信号处理功能的需要。     

基于CPCI的动态可重构系统设计与实现

近年来航天测控任务出现了测控目标多,信息传输量大,工作模式多样化等特点,为了满足实际测控任务中对设备的处理能力和灵活性的更高要求,该文实现了一种基于CPCI的动态可重构系统设计。在基带设备中通过应用程序将配置文件由CPCI总线根据需要实时写入到信号处理板上,并由主控FPGA将配置数据加载到核心处理器件FPGA和DSP中。与传统的FPGA和DSP加载方式相比,这种方法可以在极短的时间实现基带设备不同功能和模式的快速切换,不仅节约了硬件资源同时也使系统具有较大扩展性和灵活性,能够满足不同应用需求。该文给出这种可重构系统的详细设计和工程中的典型应用,该设计已经在实际中应用并取得理想的效果。     

分布式多DSP系统的CPCI总线接口设计和驱动开发

针对多DSP分布式互连的信号处理板卡,介绍基于PCI9054和FPGA的CPCI总线接口设计,分析通用WDM总线驱动程序的开发。接口设计引入数据包存储转发的方法,这种方法在分布式系统中可扩展性好、效率高。另外驱动程序采用DriverWorks进行开发,具有很好的通用性和可移植性。     

基于“魂芯一号”的雷达信号处理机设计

以4片"魂芯一号"国产高性能DSP处理器和FPGA为核心,设计了一种新型通用雷达信号处理机。处理机采用高速链路口实现4片DSP处理器之间的点对点通信,采用Altera公司的高端FPGA芯片作数据预处理和接口协议转换。该处理机具有很高的运算性能和数据交换能力,并具有较好的通用性、可重构性和扩展性。通过运算性能测试,并在信号处理机上实现某数字阵列雷达信号处理,验证了"魂芯一号"的性能和应用价值。     

基于CPCI总线的通用FPGA信号处理板的设计

雷达信号处理的庞大数据量和高实时性要求,决定了雷达信号处理系统的复杂性及设计难度.由于通用信号处理板只需对软件进行升级,从而大大降低了系统设计的时间和成本,因此成为雷达信号处理系统设计的发展趋势.FPGA在实时处理上相对DSP更具优势,更适用于雷达信号处理中.文中采用Altera高端FGPA产品Stratix Ⅲ设计了基于CPCI总线的通用FPGA信号处理板,并实际应用于某雷达系统中.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.