基于机器视觉的井下猴车钢丝绳检测系统

井下猴车广泛采用无极钢丝绳,长期运作存在钢丝绳磨损、断裂等安全隐患,针对这一问题,提出了一种基于机器视觉的检测方法,采用边缘检测算法对CCD采集的图像进行缺陷检测,并产生报警信号传送到上位机。实验结果表明该套检测系统检测精度高,极大地解决了猴车的安全运输问题。     

钢丝绳无损探伤仪研究

为了保证钢丝绳的安全运行和最大化利用,针对目前钢丝绳在线无损检测难度大、检测设备精度低、使用不方便、检测结果容易受到钢丝绳运动速度影响等缺限,本文设计了一种基于磁通和漏磁检测原理的便携式钢丝绳无损探伤仪,详细介绍了其检测原理、硬件设计以及软件设计方案。现场应用结果表明:该便携式钢丝绳无损探伤仪具有使用方便、检测精度高、对钢丝绳运动速度不敏感等优点。     

基于Mallat小波分析算法的钢丝绳断丝故障检测方法研究

针对钢丝绳断丝检测过程中,故障信号不明显而且存在干扰,本文介绍了一种基于Mallat小波分析算法的钢丝绳断丝故障检测方法,论述了其检测原理和实现方法.在分析了钢丝绳断丝信号的特征后,利用霍尔元件获取漏磁场信号,通过以DSP为核心的测试系统,在不同分辨率下,根据信号和噪声的特点,实现Mallat小波分析算法对钢丝绳断丝故...     

智能钢丝绳无损检测装置的设计

<正> 钢丝绳在使用过程中容易出现断丝、磨损、锈蚀、局部形状异常、绳径缩细等缺陷,导致钢丝绳强度下降甚至失效,易引发事故。为实现钢丝绳检测装置的小型化和智能化,针对人眼检测钢丝绳的缺陷,本文设计了以 C8051F005微控制器为核心,辅助单片机外围接口器件的便携式智能钢丝绳无损检测装置。该检测装置操作     

基于nRF24L01的钢丝绳无损检测系统

提出一种基于nRF24L01的钢丝绳无损检测系统设计方法,利用该系统对在线钢丝绳进行无损检测,检测结果采用nRF24L01进行无线传输,克服了有线传输的应用弊端,解决了钢丝绳恶劣的工作环境和其无损检测有线传输方式的矛盾,提高了检测精度。可以保证在役钢丝绳的安全可靠,避免钢丝绳更换的盲目性,做到按照钢丝绳的运行状态进行预知维修。并重点讲述了系统的硬件和软件设计,给出了详细的结论。     

基于漏磁信号的钢丝绳检测技术研究

主要讨论了钢丝绳局部缺陷(LF)和金属截面积损失(LMA)无损检测的原理,提出了一种基于漏磁信号的无损检测方法。利用永久磁铁对钢丝绳进行永久磁化,然后利用霍尔元件检测钢丝绳的磁场信号,对钢丝绳被永久磁化后的漏磁场峰-峰值与钢丝绳截面积间的关系进行了大量实验,经过数据分析和深入研究,得到了钢丝绳在截面断丝损伤类型下的峰-峰值与断丝间的关系。在此基础上研制了智能钢丝绳LF无损检测仪器,该仪器基于霍尔元件检测钢丝绳径向漏磁通的原理,用AT89C51单片机组成的检测系统,使用简单方便,具有工业实用价值和较高的性价比。     

钢丝绳LMA型损伤磁桥路检测法的研究

本文研究了基于磁桥路原理的钢丝绳LMA型损伤的无损检测方法。构建了基于单层永磁体结构的磁桥路检测模型,并通过等效磁路模型分析和钢丝填充实验等方法研究了磁桥路中磁通密度和钢丝绳横截面积之间的线性关系。     

基于单片机的钢丝绳无损检测系统设计

针对钢丝绳缺陷检测装置应用的复杂现场,从钢丝绳无损检测原理出发,采用以C8051F005型单片机为核心,扩展液晶显示和基于PC机扩展USB接口通信的设计方案,开发了一套既可以单独在线实施检测并在液晶显示器上显示检测结果、又可与上位PC联机实现智能化检测诊断的低功耗、高精度钢丝绳缺陷无损检测装置。给出了系统硬件设计的基本原理、思路和软件实现方法等。系统在实验室条件下运行良好。     

矿坝输送带实时图像探伤方法

长期工作在艰苦的环境下,钢丝绳芯输送带易发生断裂故障,对运输生产造成影响。提出一种基于模糊聚类算法的图像识别方法对输送带的损伤与接头进行检测,据背景差分法与阈值分割,分离出输送带前景、背景视频图像得到目标。利用Sobel算子检测得到损伤与接头处边缘关系,消除冗余信息,最后用模糊聚类算法对图像分类,从而对输送带是否有损伤作出判断。实验结果用以验证算法的有效性。     

三维漏磁场的钢丝绳局部损伤定量分析算法研究

本文采用均匀密布于钢丝绳圆周上的霍尔传感器阵列,捕获钢丝绳表面三维的径向漏磁信息,设计了参数自适应的空间陷波滤波器消除了股波信号,再将缺陷信号转化为灰度图,运用二维图像处理的方法进行特征提取和损伤识别. 实验结果表明,该方法可较好地区分断丝的数量及断丝断口的宽度,区分局部损伤的周向分布,如集中断丝和分散断丝.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.