MMI阵列波导光栅复用/解复用器的研制

详细分析了基于自镜像效应的MMI DMUX器件的基本工作原理,在此基础上,在SOI材料上完成了对8信道MMI DMUX的具体设计.该器件的输入、输出单模波导采用Soref的大截面脊形光波导理论进行优化设计,最后获得了当输入、输出单模波导宽度为5μm,SIE多模波导宽度和长度分别为72μm和6313.4μm时,该器件对8信道波长的隔离度均在35dB以上,且理论传输损耗＜0.18dB.     

激光直写技术制备SiO2-TiO2条形光波导工艺研究

为了研究激光直写技术在光波导制备中的应用,采用波长为1.07μm的连续光纤激光器制备了硅基SiO2-TiO2条形光波导。探讨了激光直写技术制备条形光波导的原理,研究了激光参数对条形光波导宽度的影响,最后测试了光波导的通光模场以及光传输损耗。结果表明,条形光波导的宽度随着激光功率密度的增加而增大。当激光扫描速率在0.1mm/s~1mm/s范围内变化时,条形光波导的宽度随着激光扫描速率的增加而降低;高于1mm/s时对波导宽度无明显影响。在优化的工艺参数下,激光直写得到的条形波导的厚度约为0.4μm,宽度为120μm,整条波导非常均匀、准直性很好,对于1550nm波长的光呈多模传输,最小传输损耗为1.7dB/cm。     

有机聚合物S形脊波导的弯曲损耗研究

利用广角有限差分束传播法和有效折射率法研究了S形脊波导圆弧曲率半径与弯曲损耗的关系,得出了如下结论:当圆弧曲率半径大于5 000 μm后,即使波导曲率半径增大,波导的弯曲辐射损耗已不会再明显减小,光已可以在S形脊波导中稳定地传播了.     

MMI阵列波导光栅复用/解复用器的研制

详细分析了基于自镜像效应的 MMI DMUX器件的基本工作原理 ,在此基础上 ,在 SOI材料上完成了对 8信道 MMI DMU X的具体设计 .该器件的输入、输出单模波导采用 Soref的大截面脊形光波导理论进行优化设计 ,最后获得了当输入、输出单模波导宽度为 5 μm,SIE多模波导宽度和长度分别为 72 μm和 6 313.4μm时 ,该器件对8信道波长的隔离度均在 35 d B以上 ,且理论传输损耗 <0 .18d B.     

Ge_xSi_(1-x)/Si脊形光波导的最佳结构

根据光集成技术对脊形光波导的要求 ,通过系统的分析和优化设计得出了GexSi1 -x/Si脊形光波导的最佳结构参数。对波长为 1 .3μm的光波 ,其数值孔径在光波导的输入、输出端均和单模光纤的相匹配 ,其最佳Ge组分为 0 .0 3和 0 .0 4。符合大截面且和单模光纤芯径相当的脊高分别为 4～ 1 0 μm和 4.0～ 5 .9μm ,脊宽分别为 8.8～ 1 0 .0 μm和 5 .9～ 1 0 .0 μm。     

脊形单模硅光波导的设计

对脊形单模硅光波导的模式特性进行了理论设计。分析了λ＝１．３μｍ的脊形硅光波导的结构参数及工艺流程。这种光波导的数值孔径和单模光纤匹配，传播损耗低于平面条形硅光波导，文中并对传播损耗作了讨论。     

飞秒激光加工光波导的工艺与传输特性研究

利用飞秒激光横向直写方式加工光波导,采用散射光测量法分析了光波导的传输损耗。为了提高光波导的传输性能,分析了不同数值孔径的聚焦物镜、加工速度和加工能量对光波导传输损耗的影响。实验结果表明,聚焦物镜数值孔径为0.25,激光功率为6 m W,加工速度在45~60μm/s时,飞秒激光加工的光波导具有较好的传输性能,其传输损耗低于-0.2 d B/cm。     

MDM光波导激发高阶SPP模的传输特性

研究了金属-介质-金属(MDM)型表面等离子体激元(SPP)光波导的电磁特性。理论计算结果表明,对于633nm的TM偏振入射光,当介质膜层厚度小于85nm时,波导中只能激发产生一阶SPP模(基模),其余高阶模全部截止。随着介质膜厚度增加,高阶SPP模逐渐被激发产生。当介质膜层厚度较小时,SPP模的有效折射率的实部随阶数的增加而减小,而虚部则随阶数的增加而增加,SPP基模具有最大传输距离。然而,当MDM波导中的介质层厚度超过0.555μm时,由于三阶SPP模的电磁场主要集中在离金属层相对较远的介质层中,其有效折射率的虚部具有最小值,具有最大的传输距离,而非基模。当入射光波长为633nm介质层厚度为0.9μm时,Ag/SiO2/Ag光波导中三阶SPP模的传输距离达到约150μm。     

slot波导包覆层对功率密度的影响

理论模拟研究了硅基绝缘(SOI)的slot波导中槽内限制功率与slot波导的结构参数以及包覆层折射率的关系.结果表明,如果包覆层的折射率偏离衬底SiO2的折射率,相同参数下的slot波导的传输损耗大于包覆层为SiO2的结构的传输损耗.分析表明,如果包层与衬底折射率不同,限制的光功率会从slot缝隙中渗透到折射率较高的衬底或者包层中,从而引起能量的损耗.理论模拟得到了在缝隙宽度为0.12μm的情况下,slot波导槽内最大的光功率限制为28.54%,这个值包含了纳米线波导与slot波导直接耦合产生的耦合损耗以及slot波导自身的传输损耗.     

环氧树脂多模光波导的研制

以环氧树脂为材料,用简单、低成本的非接触式光 刻法制作多模光波导。通过实验,找出一种可靠有效的有机溶剂作为 显影剂及其相应的显影时间; 并研究了温湿度和旋涂工艺对光波导厚度的影响;以及光刻掩模版透光部分宽度、光刻 掩模版与下包 层之间的间距、曝光光强和曝光时间对光波导宽度的影响。扫描电子显微镜(SEM)对 样品形貌分析表明,脊形光波导表面光滑且侧壁笔直,光波导芯横截面约为 50μm×50μm。采用cut-back法,测出环氧树脂多模光波导的传输损耗为0.1dB/cm@850nm。考虑到 光电集成过程中对光波导的高温冲击,对样品进行了热稳定性试验,获得的最高稳定温 度为210℃。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.