一种基于LTCC 技术的脊基片集成波导（SIW）到微带的过渡结构

介绍了一种基于LTCC 技术的脊基片集成波导（SIW）到微带的过渡结构。将传统脊波导到微带过渡的设计思路,运用于基于LTCC 技术的基片集成波导（SIW）到Rogers5880 基片微带的过渡设计中,实现了LTCC SIW 到Rogers5880 基片微带的宽带过渡。从仿真结果可以看出,在25.2GHz 到40GHz 的频带内,回波损耗S11 小于-15dB, 插入损耗优于-0.2dB。     

A V-band planar narrow bandpass filter using a new type integrated waveguide transition

A surface mountable planar narrow bandpass filter is proposed and demonstrated at V-band. The filter is constructed using an integrated waveguide in an alumina substrate employing a novel microstrip line to waveguide transition. The insertion loss per one transition is less than 0.1 dB over 43 to 73 GHz. A fabricated three-pole Chebyshev filter exhibits an insertion loss of 3 dB with a 3.3% bandwidth at a center frequency of 62 GHz and the return loss is better than 15 dB in the passband.     

基于SIW技术的毫米波滤波器研究与设计

基于基片集成波导（substrate integrated waveguide,SIW）结构设计了两款四阶的耦合带通滤波器,使用三维全波电磁场仿真软件HFSS对设计的两款滤波器进行了仿真设计和优化.由仿真结果分析得出,两款滤波器的工作频率均位于毫米波频段.第一款SIW滤波器实现了切比雪夫型响应,中心频率为20 GHz,带宽为2 GHz,通带内的插入损耗低于1.5 dB,回波损耗低于-20 dB,在阻带中对信号的衰减程度可以达到50 dB.第二款SIW滤波器实现了准椭圆函数型的响应,中心频率为29.1 GHz,带宽为300 MHz,通带内的插入损耗低于1 dB,回波损耗低于-20 dB,在通带到阻带的过渡中实现了两个陷波点.仿真结果表明,在毫米波滤波器设计中引入SIW结构,有利于优化滤波器尺寸,得到较好的滤波器性能指标,是毫米波滤波器发展的一个重要方向.     

Broadband transition between air-filled waveguide and substrate integrated waveguide

A Ka-band broadband transition between an air-filled waveguide and a substrate integrated waveguide (SIW) is proposed. The transition is realised by using a radial probe inserted into the height-tapered metal waveguide. Results show that an insertion loss less than 2.5 dB and a return loss better than 14 dB in the frequency band 28.3-39.5 GHz are obtained for a back-to-back structure     

一种新型毫米波集成波导微带转换的分析与设计

提出一种新型集成于单层微带基片的毫米波集成波导微带转换 ,由一圆形微带谐振器、微带共面波导探针组成。利用全波分析软件对该转换器进行了分析计算、优化设计。测试了波导微带转换实物 ,结果表明 ,在Ka波段在 1 GHz频带内 ,该波导微带转换具有较低的插入损耗 ( <0 .4d B)和反射损耗 ( <-1 4d B)。可满足相关毫米波微带集成电路系统的应用要求。     

K-Band Integrated Double-Balanced Mixer

A novel microwave integrated circuit (MIC) double-balanced mixer with good isolation between the three ports is described. The mixer is fabricated using a combination of microstrip lines, slotlines, and coupled slotlines, together with four beam-lead Schottky-barrier diodes. The K-band magic-T has been developed for the double-balanced mixer. The minimum conversion loss measured at a signal frecuency of 19.6 GHz is 4.7 dB. Isolation between RF and LO ports is greater than 20 dB from 18 to 21 GHz. The mixer can be expected to have wide applications in MIC receivers and transmitters up to the millimeter-wave band.     

Broadband substrate integrated waveguide to rectangular waveguide transition with fin-line

A novel broadband transition from a substrate integrated waveguide to a rectangle waveguide with an antipodal fin-line in its quasi-TE mode is presented. Impedance match and field mode gradual changing of transition circuits have been carefully analysed and performed. Experimental results show about a 1.6 dB insertion loss and greater than 12 dB return loss for back-to-back transitions over 10 GHz bandwidth from 26.5 to 40 GHz, so single transition insertion loss is about 0.8 dB. The transition is proposed for low-loss front-end circuits in the millimetre-wave band.     

A New Integrated Waveguide-Microstrip Transition (Short Papers)

A new waveguide-microstrip transition is described. This design provides wide-band performance (18-26 GHz) and very good reproducibility without the need for variable elements. The circuit is fully integrated on the substrate and the characteristics are much less sensitive to small variations in the dimensions than other known transitions. A narrow-band version has been made for the telecommunication band in particular (17.7-19.7 GHz) with a VSWR less than 1.1 and an attenuation less than 0.25 dB. The design can easily be scaled to other frequencies and is especially useful at frequencies above 10 GHz.     

基片集成波导及其微带过渡的设计

设计了工作于毫米波频段的基片集成波导（SIW）,阐述了基片集成波导及其微带过渡的原理和结构,公式推导出过渡结构中各种参数的计算方法,通过HFSS软件进行仿真,制作了SIW与微带过渡的样品并测试,结果表明在35.5～37.5GHz范围内,波导插损为-1～-2dB,回波损耗小于-10dB,性能良好。     

A New MIC Magic-T Using Coupled Slot Lines

Novel microwave integrated circuit (MIC) 180/spl deg/ hybrids (magic-T's) suitable for MIC are described. They make use of the two orthogonal modes (even and odd) of the coupled slot lines, and, therefore, have special port location, which is quite different from that of the conventional 180/spl deg/ hybrids such as a rat-race. That is, the two-ports, which correspond to the E-arm and the H-arm of the well-known waveguide magic-T, can be located on the same side, opposite to the other two ports. This feature is of a great practical advantage when applied to an MIC, because the crossing of the transmission lines can be omitted when this type of magic-T is applied to balanced-type circuits such as balanced mixers. Satisfactory experimental results at a center frecuency of 6 GHz are given. The isolation between the E- and the H-ports is better than 30 dB over an octave band, and the frequency sensitivity of the coupling is almost flat in the frequency range from 2 to 10 GHz.     

40 GHz Vertical Transition with a Dual‐Mode Cavity for a Low‐Temperature Co‐fired Ceramic Transceiver Module

A new vertical transition between a substrate integrated waveguide in a low‐temperature co‐fired ceramic substrate and an air‐filled standard waveguide is proposed in this paper. A rectangular cavity resonator with closely spaced metallic vias is designed to connect the substrate integrated waveguide to the standard air‐filled waveguide. Physical characteristics of an air‐filled WR‐22 to WR‐22 transition are compared with those of the proposed transition. Simulation and experiment demonstrate that the proposed transition shows a ?1.3 dB insertion loss and 6.2 GHz bandwidth with a 10 dB return loss for the back‐to‐back module. A 40 GHz low‐temperature co‐fired ceramic module with the proposed vertical transition is also implemented. The implemented module is very compact, measuring 57 mm × 28 mm × 3.3 mm.     

Broadband transition between half mode substrate integrated waveguide and rectangular waveguide

A broadband transition between a half mode substrate integrated waveguide and a rectangular waveguide with an antipodal fin-line in its quasi-TEM mode is presented. Experimental results show about 1.3 dB insertion loss and below 215 dB return loss for a back-toback double transition over 10 GHz bandwidth from 26.5 to 40 GHz (the single transition insertion loss is about 0.65 dB). The transition may be used in low-loss and low-noise front-end circuits of the microwave and millimetre-wave bands.     

Novel transition between different configurations of planartransmission lines

New designs of coplanar waveguide (CPW)-microstrip, CPW-stripline, conductor backed CPW (CBCPW)-microstrip, and CBCPW-stripline transitions are presented. Simulation using the high frequency structures simulator (HFSS) shows that the return loss of the CPW-microstrip transition is less than -25 dB up to 11 GHz. Similarly is the CPW-stripline transition. In the case of two back to back CBCPW-stripline transitions, the return loss is less than -22 dB up to 9 GHz. Experimentally, the S ₁₁ of two back to back CBCPW-microstrip transitions on an alumina substrate is less than -15 dB up to 25 GHz     

A high-performance integrated K-band diplexer

This paper describes the design and measurement of a planar diplexer integrated on a single silicon substrate. The diplexer channels are 5% and 6.5% relative bandwidth at 28 and 31 GHz, respectively. The diplexer is based on a micropackaged membrane supported capacitively coupled microstrip structure and is 1.5 cm×1.6 cm and only 1.4 mm thick. The measured insertion loss is 1.4 dB (5%) and 0.9 dB (6.5%) for the two channels with better than 35 dB isolation in the 28 GHz band and better than 50 dB isolation in the 31 GHz band. The measured results include all transition and packaging effects. The diplexer has coplanar-waveguide ports and can easily be integrated with other elements such as planar antennas, low-noise amplifier, and power amplifiers     

基片集成波导和微带转换器的理论与实验研究

基片集成波导(SIW)技术中非常重要的问题之一是该类波导与其它形式传输线的过渡问题.最近已有文章探讨了SIW与微带线过渡的一种锥形结构,在本文中对此类结构进行了全面的拓展,分析了直接过渡、凸型过渡和凹型过渡几种情况,并实验验证了C波段的微带SIW转换器.实验结果表明,在4.1～5.5GHz的频段内,驻波比小于1.2,插损优于0.5dB.     

A Broadband Planar Magic-T Using Microstrip–Slotline Transitions

The improved version of a broadband planar magic-T using microstrip-slotline transitions is presented. The design implements a small microstrip-slotline tee junction with minimum size slotline terminations to reduce radiation loss. A multisection impedance transformation network is used to increase the operating bandwidth and minimize the parasitic coupling around the microstrip-slotline tee junction. As a result, the improved magic-T has greater bandwidth and lower phase imbalance at the sum and difference ports than the earlier magic-T design. The experimental results show that the 10-GHz magic-T provides more than 70% of 1-dB operating bandwidth with the average in-band insertion loss of less than 0.6 dB. It also has phase and amplitude imbalance of less than plusmn1deg and plusmn0.25 dB, respectively.     

Analysis and Design of Current Probe Transition From Grounded Coplanar to Substrate Integrated Rectangular Waveguides

The transition between a grounded coplanar waveguide (GCPW) and a substrate integrated rectangular waveguide (SIRW) is investigated in this paper. The proposed scheme makes use of a current probe to transfer power between the two dissimilar transmission lines. A computer-aided-design-oriented analytical model is developed in order to optimize the geometrical dimensions of the transition. By using the GCPW instead of the microstrip line to interface the SIRW, substrate thickness can be increased without incurring a penalty due to transmission loss. Therefore, it is possible to achieve higher$Q$components. Experiments at 28 GHz show that an effective bandwidth of 10% can easily be obtained. The insertion loss is less than 0.73 dB over the bandwidth of interest.     

一种新型微带/槽线混合结构的宽带魔T

提出一种新型宽带平面魔T结构,该魔T基于传统的微带混合环的原理设计而成,为扩展工作频带,采用了微带-槽线混合结构,通过将槽线T接头功分器的反相输出特性与微带T接头功分器的同相输出特性相结合,从而实现两输出端口的宽带和/差输出。测量数据表明该魔T结构可实现超过25%的相对工作带宽(输入端口回波损耗低于-10dB),在工作频带(4.3~5.6GHz)内,其传输插损小于1dB,两对隔离端口的隔离度分别为-30dB和-20dB。     

基于基片集成波导(SIW)的双模带通滤波器

首先介绍了基片集成波导(SIW)这一新技术,并用表面电流理论解释了电磁波在SIW中的传输模式。同时,通过使用凹型过渡和接地共面波导过渡两种转换方式,解决了基片集成波导与微带线的过渡问题,从而解决了滤波器和有源微波电路的集成问题。文章用这两种过渡方式,分别设计了中心频率在5.63GHz和5.45GHz的双模带通滤波器。实验表明:这两种滤波器在通带内的反射损耗S11均优于-21dB,-3dB带宽都在50MHz以上。     

V-band Low-noise Integrated Circuit Receiver

A compact low-noise V-band integrated circuit receiver has been developed for space communication systems, The receiver accepts an RF input of 60-63 GHz and generates an IF output of 3-6 GHz. A Gunn oscillator at 57 GHz is phaselocked to a low-frequency reference source to achieve high stability and low FM noise. The receiver has an overall single sideband noise figure of less than 10.5 dB and an RF to IF gain of 40 dB over a 3-GHz RF bandwidth. All RF circuits are fabricated in integrated circuits on a Duroid substrate.