钛酸锶铅铁电薄膜的制备、应用及其研究进展

综述了钛酸锶铅(PST)铁电薄膜目前最常用的4种制备工艺:溶胶-凝胶(Sol_gel)法、磁控溅射(Magnetron Sput-tering)、脉冲激光沉积(PLD)和金属有机化学气相沉积(MOCVD),并简要介绍了PST目前的研究进展以及PST薄膜在铁电移相器、动态随机存储器(DRAM)和热释电红外探测器方面的应用,提出了发展展望。     

钛酸锶钡薄膜性能优化研究

综述了钛酸锶钡[Ba1-xSrxTiO3（简称BST）]薄膜的制备方法及研究进展,介绍了衬底和电极材料对BST薄膜性能的影响,讨论了引入缓冲层、掺杂和制备组分梯度薄膜对其性能的影响,并指出了未来BST薄膜材料的研究发展方向。     

钡铁氧体薄膜的研究及应用

钡铁氧体薄膜有着良好的磁性能。介绍了钡铁氧体薄膜的基本制备方法,综述了溶胶-凝胶法、对向靶溅射法、脉冲激光沉积法和射频溅射法的最新研究状况,结合最新文献论述了钡铁氧体薄膜的几种典型的表征方法,对钡铁氧体薄膜的应用领域进行了总结,并讨论了钡铁氧体薄膜目前存在的问题及发展趋势。     

用溶胶—凝胶法制备薄膜电加热器

文章介绍了用溶胶—凝胶法制备薄膜电加热器的工艺原理和工艺过程。并介绍了各工艺参数对电热膜的性能影响。     

Bi4Ti3O12铁电薄膜的制备及研究进展

铁电薄膜具有良好的铁电、介电性能,在非挥发存储器件方面有很好的应用前景.本文介绍了钛酸铋(Bi4Ti3O12)铁电薄膜的研究现状,对目前Bi4Ti3O12铁电薄膜最常用的几种主要制备方法及其掺杂改性进行了评述,指出了Bi4Ti3O12铁电薄膜研究中亟待解决的几个问题.     

FeCoAlN软磁薄膜的制备与性能

采用磁控溅射法在Ar+N2的混合气氛中制备FeCoAlN薄膜,并对其进行磁场真空热处理,以研究薄膜的结构、磁性及热稳定性。当N2与(N2+Ar)的流量比为9%时制备的薄膜具有良好的软磁性能。随着Al含量的增加,薄膜的热稳定性明显得到改善。Al含量为13.5%的(Fe64.8Co35.2)AlN薄膜在400℃真空磁场热处理60min,仍然具有良好的软磁性能,其饱和磁化强度μ0Ms为1.2T,易轴矫顽力为0.68kA/m,各向异性场为2.8 kA/m。     

乙二胺四乙酸含量对M型钡铁氧体薄膜磁性能和微波性能的影响

采用有机金属裂解法在Pt/TiO2/SiO2/Si基板上制备M型钡铁氧体(Ba M)薄膜,并着重研究了螯合剂乙二胺四乙酸(EDTA)含量对Ba M薄膜结构、磁性和微波性能的影响。研究发现,当EDTA∶(Ba2++Fe3+)=1(摩尔比)时,Ba M薄膜形成较多的六角形状晶粒,而且磁性能和微波性能较佳,沿c轴生长的取向度高达0.91,饱和磁化强度Ms为302k A/m(μ0Ms=0.38T),在50GHz时铁磁共振线宽ΔH为22k A/m(277Oe)。这是因为适量的EDTA不仅在溶液挥发时能够阻止金属离子的分离和间歇性的沉淀,并且能够促进成形成均匀的前驱液,从而在前驱液分解时能促进形成Ba M,在经过热处理后易形成沿c轴取向、具有六角形状晶粒的Ba M薄膜。     

含羧基聚酰亚胺薄膜的制备与性能研究

以3,5-二氨基苯甲酸(35DABA)、4,4’-二氨基二苯醚(44ODA)和3,3’,4,4’-四甲酸联苯二酐(BPDA)为原料,在强极性非质子有机溶剂中进行聚合反应,制得了高粘度含羧基聚酰胺酸(CPAA)溶液,经涂膜、热亚胺化,得到了坚韧透明的含羧基聚酰亚胺(CPI)薄膜,并对其性能进行了研究.结果表明:CPI薄膜...     

Y2O3掺杂对钛酸锶钡陶瓷材料介电-温度及电阻率-温度特性的影响

钛酸钡基电介质陶瓷因具有良好的介电和正温度系数特性已被广泛应用于科技、工业以及日常生活中,在新兴领域的需求下,开发具有低居里温度和高常温电阻率特性的电介质陶瓷材料具有重要意义。因此,采用固相法制备了不同掺杂浓度氧化钇(Y₂O₃)的钛酸锶钡(Ba_0.7Sr_0.3TiO₃,BST),正温度系数(positive temperature coefficient,PTC)陶瓷材料,通过X射线衍射和扫描电镜测试了试样的理化特性,利用宽频介电谱仪和电阻率–温度测量系统分别获得了试样的介电–温度特性和电阻率–温度特性,并构建了四象限模型分析钇(Y)对材料介电–温度特性和电阻率–温度特性的影响机理。研究表明：随Y₂O₃含量的增大,介电常数和居里温度均呈先增大后减小的趋势,而常温电阻率呈现相反的变化趋势。0.0008 mol的Y₂O₃掺杂可大幅提高BST材料相对介电常数(>10⁵)...     

锡钛酸钡薄膜材料的研究现状

铁电薄膜是一类重要的功能材料,其中锡钛酸钡（BTS）薄膜由于具有较优异的介电性能而成为研究热点。本文综述了锡钛酸钡薄膜材料的制备方法和介电性能的研究现状,提出了研究中需要解决的问题。     

Microwave Properties of Mn Doped (Ba1 - x,Srx)TiO3Thin Films for Tunable Phase Shifter

Ferroelectric Mn doped Ba_0.5Sr_0.5TiO₃ (Mn-BST) films with/without BaTiO₃ (BT) buffer layer have been grown on (001) MgO substrates by a pulsed laser deposition to investigate electrical tunability at microwave frequencies. Structural properties and surface morphologies of the films were investigated using an X-ray diffractometer and a scanning electron microscope, respectively. Microwave dielectric properties of Mn-BST thin films with BT buffer were studied for reduction of dielectric loss and improvement of electrical tunability. Distributed analog phase shifters have been designed and fabricated on Mn-BST films with/without BT buffer layer to understand microwave dielectric properties. The differential phase shift of the phase shifter fabricated on Mn-BST film was 22° at 10 GHz with 80 V of applied dc bias voltage. In comparison, phase shifter fabricated on Mn-BST/BT multilayers exhibit 41° of differential phase shift at the same condition. This suggests that a BT buffer layer is for microwave tunable device applications. The phase shifter fabricated on Mn-BST/BT multilayers exhibit a low insertion loss (S₂₁) of ?1.1 dB, and a low return loss (S₁₁) of ?14 dB with a bias voltage of 80 V.     

Synthesis, Microstructure and Electrical Properties of Hydrothermally Prepared Ferroelectric BaTiO3 Thin Films

Thin films of polycrystalline, tetragonal BaTiO₃ on oxidized Ti metal substrates were synthesized at 240°C under hydrothermal conditions. Microstructure and electrical properties of the films generated over a four week period of synthesis formed the focus of this study. The films displayed a smooth and shiny surface with a relatively dense structure and no observable cracks. Film thickness reached 0.5 m after two weeks of synthesis and thereafter remained constant. Diameters of the grains on the film surface were in the range of 12 m. It is proposed that initial formation of the BaTiO₃ film occurs by reaction of Ba²⁺ with solubilized titanium oxide on the Ti metal surface followed at later stages by an in-situ growth via reaction of TiO_x with Ba²⁺ diffusing through the BaTiO₃ film. X-ray diffraction and Raman spectroscopy indicated that the BaTiO₃ films are tetragonal, and the films exhibited typical ferroelectric hysteresis loops at room temperature. However, no evidence of the dielectric anomaly (Curie transition) between 30 and 200°C was observed. Dielectric constant of the films at 1 kHz at room temperature was between 400–500. Both dielectric constant and tan exhibited low dispersion as a function of frequency at temperatures below 150°C, and the dispersion increased with temperature.     

Multilayer Ceramic Capacitors with Thin (Ba,Sr)TiO3 Layers by MOCVD

Barium strontium titanate ((Ba,Sr)TiO₃; BST) thin films were prepared on platinum-coated MgO substrates at 650°C by metalorganic chemical vapor deposition (MOCVD). Perovskite single phased BST thin films were obtained. Dielectric constant at 1 kHz–100 mV was 1000. Multilayer ceramic capacitor with twelve BST dielectric layers of 0.26 m thick was formed on the MgO substrate. Capacitance and dissipation factor (tan) at 1 kHz–100 mV were 32 nF and 1.5% respectively. Capacitance per unit volume of 33 F/mm³ provided 10 to 20 times larger volumetric efficiency than the conventional multilayer ceramic capacitors. Temperature coefficient of capacitance was –4000 ppm/°C. The leakage current at 1 V was 2.3×10^-9 A that yielded an acceptable CR product of 12.8 M-F. MOCVD was proposed as one of the promising manufacturing technologies for multilayer ceramic capacitors of high performance with sub-micron thick dielectric layers.     

Microwave Dielectric Properties of Ferroelectric Pb(Zr1 − x Ti x )O3 Thin Films Using Interdigital Capacitors

Ferroelectric Pb(Zr_{1 ? x} Ti _x )O₃ (PZT) films were deposited on (001) MgO single crystals using sol-gel method. Structural properties and surface morphologies of PZT films were investigated using an X-ray diffractometer and a scanning electron microscopy, respectively. The dielectric properties of PZT films were investigated with the dc bias field of 0–135 kV/cm using interdigitated capacitors (IDC) which were fabricated on PZT films using a thick metal layer by photolithography and etching process. The small signal dielectric properties of PZT films were calculated by a modified conformal mapping method with low and high frequency data, such as capacitance measured by an impedance gain/phase analyzer at 100 kHz and reflection coefficient (S-parameter) measured by a HP 8510C vector network analyzer at 1–20 GHz. The IDC on PZT films exhibited about 67% of capacitance change with an electric field of 135 kV/cm at 10 GHz. These PZT thin films can be applied to tunable microwave devices such as phase shifters, tunable resonators and tunable filters.     

Ferroelectric and Dielectric Properties of Lanthanum-Modified Bismuth Titanate Thin Films Obtained by the Polymeric Precursor Method

Lanthanum-modified bismuth titanate, Bi_{4 – x}La_xTi₃O₁₂ (BLT), thin films with a La concentration of 0.75 was grown on Pt/Ti/SiO₂/Si substrates by using the polymeric precursor solution and spin-coating method. The scanning electron microscopy (SEM) showed rounded grains, which is not typical for these system. The BLT films showed well-saturated polarization-electric field curve which 2P_r = 41.4 C/cm² and V_c = 0.99 V. The capacitance dependence on the voltage is strongly nonlinear, confirming the ferroelectric properties of the film resulting from the domains switching. These properties make BLT a promising material for FERAM applications.     

Ferroelectric Properties of Mo-Doped Bi4-XLaXTi3O12 Films

Mo-doped Bi_3.35La_0.75Ti₃O₁₂ (BLTM) films were deposited on Pt/Ti bottom electrodes by using a sol-gel method and crystallized at 700°C for 30 min in O₂ atmosphere. The ferroelectric properties were greatly improved by substituting B-site ions with Mo ions and the BLTM films showed strong preferred (117) orientation. Typical remanent polarization (2Pr) and coercive field (2Ec) values were 32.0 μC?cm^?2 and 158 kV?cm^?1, respectively. It was also found that the leakage current densities in the BLTM films were lower than those in Bi_3.35La_0.75Ti₃O₁₂ (BLT) films.