十六氯酞菁锌有机半导体材料的合成及其气敏性研究

Due to the difficulty in synthesizing perhalogenated metallophthalocyanine, the method of ammonium molybdate solid phase catalysis was introduced, and by using tetrachlorophthalic anhydride and urea as the raw materials, hexadecachloro zinc phthalocyanine （ZnPcCl16） was synthesized. Components of the composite were analyzed by energy spectrum, and its functional group structures and absorption peaks were characterized by IR and UV-vis spectroscopy. The thin films of gas sensors were prepared in a vacuum evaporation system and evaporated onto SiO2 substrates, where sensing electrodes were made by MEMS micromachining. The optimal conditions for the films are： substrate temperature of 150 ℃ evaporation current of 95 A and film thickness of 50 nm. The result showed that the sensors were ideally sensitive to Cl2 gas and could detect the minimum concentration of 0.3 ppm.     

碳纳米管聚苯胺薄膜SAWSO2传感器的实验研究

以128°Y-LiNbO3晶体上实现的双声路声表面波(SAW)器件为载体,在器件的测量声路上制作了对SO2气体具有敏感作用的碳纳米管聚苯胺薄膜,提出了一种基于碳纳米管聚苯胺薄膜的SAW SO2气体传感器.该传感器中的双声路结构消除了因外界测量条件改变引起的测量误差,提高了传感器的可靠性和准确性.利用原位法制备的碳纳米管聚苯胺增加了SO2气体的吸附面积,提高了传感器的灵敏度.实验结果表明,基于碳纳米管聚苯胺薄膜的SAW SO2气体传感器在测量范围内对各种浓度的SO2气体具有好的响应特性;当输入体积分数为1×10-6时,传感器的响应灵敏度约为8.3 kHz,比单一聚苯胺薄膜高1.8 kHz.此外,该传感器也具有更好的线性特性.     

酞菁钯-聚苯胺修饰声表面波传感器及含磷毒气的检测

针对含磷毒气快速检测问题,以自制的杂化酞菁钯.聚苯胺为敏感膜材料,设计了一种双信道声表面波(SAW)传感器.阐述了传感器的基本原理,推导出以有机膜作为信道中间介质时,差频输出△f由物理化学吸附两种机制叠加的数学模型.依据声波振荡条件,设计了146±5MHz振荡频率的信号采集电路;以钽酸锂晶体为压电基片,通过MEMS微加工技术形成叉指电极对和加热膜;以真空镀膜工艺将敏感膜材料成膜,修饰在SAW信道中间区域构成SAW传感器.测试结果表明:最优气敏性时的材料配比为PdPc0.35PANI0.65;芯片加热60～80℃可提高性能,响应时间≤30s;输出与测试气体浓度与数学模型一致,为线性变化率-110kHz(mg/m3)的N型线性关系;抗汽油、CO2等气体干扰;80天稳定性考核,△f≤±0.1kHz,满足实际使用要求.     

酞菁钯-聚苯胺修饰声表面波传感器及含磷毒气的检测

针对含磷毒气快速检测问题,以自制的杂化酞菁钯.聚苯胺为敏感膜材料,设计了一种双信道声表面波(SAW)传感器.阐述了传感器的基本原理,推导出以有机膜作为信道中间介质时,差频输出△f由物理化学吸附两种机制叠加的数学模型.依据声波振荡条件,设计了146±5MHz振荡频率的信号采集电路;以钽酸锂晶体为压电基片,通过MEMS微加工技术形成叉指电极对和加热膜;以真空镀膜工艺将敏感膜材料成膜,修饰在SAW信道中间区域构成SAW传感器.测试结果表明:最优气敏性时的材料配比为PdPc0.35PANI0.65;芯片加热60～80℃可提高性能,响应时间≤30s;输出与测试气体浓度与数学模型一致,为线性变化率-110kHz(mg/m3)的N型线性关系;抗汽油、CO2等气体干扰;80天稳定性考核,△f≤±0.1kHz,满足实际使用要求.     

声表面波气敏传感器敏感薄膜厚度的研究

理论上研究了声表面波气敏传感器敏感薄膜厚度对系统灵敏度的影响.分析了气体浓度、敏感薄膜厚度、敏感薄膜密度对系统灵敏度的共同影响.提出了最佳薄膜厚度的概念,并给出了相应的关系式.     

基于聚苯胺／In2O3的声表面波CO气体传感器研究

为克服现有CO气体传感器精度低,工作温度高,成本高的缺点,在ST切型石英晶片上成功实现了一种新型的室温下延迟线型声表面波CO气体传感器.传感器采用双通道延迟线结构,在一条延迟线路上采用光刻技术构造出一个方形敏感区,将掺杂有In2O3的聚苯胺CO气体敏感材料覆盖在方形敏感区形成敏感膜(0.5～1.2μm).在-40～+85℃间的CO气体中,对此气体传感器进行测试实验,实验结果显示该声表面波CO传感器具有好的敏感性、快的敏感速度和恢复速度、高的精度.     

聚苯胺/BaCe_(0.9)Gd_(0.1)O_(3-δ)材料的制备、表征与氨敏性能研究

利用化学氧化法制备的聚苯胺(PANI)和溶胶-凝胶法制备的BaCe0.9Gd0.1O3-δ(BCG)粉体,采用直接分散法制备了PANI/BCG复合材料。通过XRD、FTIR和TEM对所制产物进行了表征,并且利用气敏元件测试系统研究了PANI/BCG复合材料的氨敏性能。结果发现,BCG粒子在PANI中分散性良好,PANI/BCG复合材料在室温下对氨气表现出良好的气敏性,对体积分数100×10–6的氨气的灵敏度达到20,并且选择性好,性能稳定,适于在较宽的浓度范围内对氨气进行检测。     

水溶性聚苯胺/SmBaCuMO_(5+δ)(M=Cu,Zn)材料的制备与氨敏性能研究

采用化学氧化法制备了水溶性聚苯胺(PANI),溶胶–凝胶法制备了SmBaCuMO5+δ(M=Cu,Zn;SBCM)粉体,用微粒填充法制备了PANI/SBCM复合材料。利用傅里叶变换红外光谱法(FT-IR)、XRD、TEM对产物进行了分析表征,研究了PANI/SBCM元件的氨敏性能。结果表明,PANI/SBCM元件在室温下对NH3具有良好的灵敏性,同条件下PANI/SmBaCuCuO5+δ(SBCC)元件的氨敏性能优于PANI/SmBaCuZnO5+δ(SBCZ)元件。室温条件下,PANI/SBCC元件对体积分数为100×10–6的NH3的最大灵敏度为7.29,具有高的灵敏度和选择性,且性能稳定。     

新型多功能矿用危险气体传感器的研究

基于CH4气体的吸收光谱特性,采用开腔气室结构及单光束多波长探测技术,研制出一种多种功能矿用危险气体传感器.与商用的各种CH4传感器相比,它除了具有测量范围宽、精度高及响应快等常规特点外,还能进行多组气体组分含量的测量,且能对所测气体的爆炸性和危险度进行分析.     

基于PANI/Au/Al2O3的丙酮气体传感器选择性及感测机理研究

以PANI为敏感材料,采用电聚合法制备PANI/Au/Al_2O_3电极,组装成感测系统,并以干燥的N_2为背景气体,对23～1189 ppm浓度范围的丙酮气体进行感测。分别添加O_2、CO_2、NH_3、水蒸气作为干扰气体进行选择性实验。结果表明,当以O_2或CO_2作为干扰气体时,该气体传感器的灵敏度均有所降低,但混合气体中丙酮的浓度与感测电极的电阻变化率仍具有良好的线性关系;当加入水蒸气(30%RH)或4 ppm氨气时,该丙酮气体传感器的电阻变化率分别稳定在5%和4%左右基本不变,不随丙酮气体浓度的改变而改变,说明该传感器受水分和氨气的干扰非常大。最后分别对PANI与丙酮、CO_2、NH_3、水蒸气进行反应的机理进行了分析。     

Chlorine gas sensors using hybrid organic semiconductors of PANI/ZnPcCl16

PANI/ZnPcCl_(16)(polyaniline doped with sulfosalicylic acid/hexadecachloro zinc phthalocyanine) powders were vacuum co-deposited onto Si substrates,where Pt interdigitated electrodes were made by micromachining.The PANI/ZnPcCl_(16) films were characterized and analyzed by SEM,and the influencing factors on its intrinsic performance were analyzed and sensitivities of the sensors were investigated by exposure to chlorine(Cl_2) gas.The results showed that powders prepared with a stoichiometric ratio of(ZnPc...     

Excellent performance of gas sensor based on In2O3-Fe2O3 nanotubes

In₂O₃-Fe₂O₃ nanotubes are synthesized by an electrospinning method. The as-synthesized materials are characterized by scanning electron microscope and X-ray powder diffraction. The gas sensing results show that In₂O₃-Fe₂O₃ nanotubes exhibit excellent sensing properties to acetone and formaldehyde at different operating temperatures. The responses of gas sensors based on In₂O₃-Fe₂O₃ nanotubes to 100 ppm acetone and 100 ppm formaldehyde are 25 (240℃) and 15 (260℃), and the response/recovery times are 3/7 s and 4/7 s, respectively. The responses of In₂O₃-Fe₂O₃ nanotubes to 1 ppm acetone (240℃) and formaldehyde (260℃) are 3.5 and 1.8, respectively. Moreover, the gas sensor based on In₂O₃-Fe₂O₃ nanotubes also possesses an excellent selectivity to acetone and formaldehyde.     

并五苯钝化层增强C60有机场效应晶体管性能的研究

We investigated the properties of C₆₀-based organic field-enect transistors（OFETs）（?） a pentacene passivation layer inserted between the C₆₀ active layer and the gate dielectric.After modification of the pentacene passivation layer,the performance of the devices was considerably improved compared to C₆₀-based OFETs with only a PMMA dielectric.The peak field-effect mobility was up to 1.01 cm²/（V·s） and the on/off ratio shifted to 10⁴.This result indicates that using a pentacene passivation layer is an effective way to improve the performance of N-type OFETs.     

Mobility enhancement by using silk fibroin in F16CuPc organic thin film transistors

High performance n-type F₁₆CuPc organic thin-film transistors (OTFTs) were fabricated on polyethylene terephthalate (PET) using silk fibroin as the gate dielectric. The average field-effect mobility (μ_FE) value in the saturation regime is 0.39 cm² V⁻¹ s⁻¹ approximately one order of magnitude higher than the reported values in the literature. A typical F₁₆CuPc OTFT exhibits an on/off current ratio of 9.3 × 10², a low threshold voltage of 0.65 V, and a subthreshold swing value of 730 mV/decade. The enhancement of μ_FE results from very good crystal quality of F₁₆CuPc on silk fibroin, supported by grazing incidence X-ray diffraction (GIXD) data.     

The electronic structures and optical properties of BaTiO3 and SrTiO3 using first-principles calculations

The electronic-energy band structures and total density of states (TDOS) for bulk BaTiO₃ and SrTiO₃ were calculated by the first-principles calculations using density-functional theory and local-density approximation. The calculated band structure of BaTiO₃ and SrTiO₃ show the energy band gaps of 1.81 and 1.92 eV at the Γ point in the Brillouin zone, respectively. The optical properties of the both perovskites in the core-level spectra are investigated by the first principles under scissor approximation. The optical constants like refractive index and extinction coefficient of both BaTiO₃ and SrTiO₃ were derived from the calculated real and imaginary parts of the dielectric function. The calculated spectra were compared with the experimental results for BaTiO₃, SrTiO₃ in good agreement.     

介稳态TiCl4醇水溶液水解制备TiO2致密层及其在无机-有机杂化异质结钙钛矿太阳电池中的应用

致密层作为钙钛矿太阳电池的重要组成部分, 对其制备方法, 工艺及微结构等性质的研究对提高钙钛矿太阳电池的光伏性能具有重要影响. 本文利用介稳态的TiCl₄醇水溶液作为前驱体溶液, 通过旋涂水解制备TiO₂致密层, 并研究了前驱体溶液不同醇水比对致密层微结构及其相应太阳电池光伏性能的影响. 结果表明, 将2 mol.L_-1的TiCl₄的水溶液按醇水体积比3:1的比例用异丙醇稀释后所制备的TiO₂致密层其厚度为126 nm, 且相应的太阳电池取得最高的光电转换效率10.6 %.     

SOI planar photonic crystal fabrication: Etching through SiO2/Si/SiO2 layer systems using fluorocarbon plasmas

Dry plasma etching of sub-micron structures in a SiO₂/Si/SiO₂ layer system using Cr as a mask was performed in a fluorocarbon plasma. It was determined that the best anisotropy could be achieved in the most electropositive plasma. A gas composition yielding the desired SOI planar photonic crystal structures was optimized from the available process gases, Ar, He, O₂, SF₆, CF₄, c-C₄F₈, CHF₃, using DC bias data sets. Application of the c-C₄F₈/(noble gas) chemistry allowed fabrication of the desired SOI planar photonic crystal. The average etching rates for the pores and ridge waveguide regions were about 71 and 97 nm/min, respectively, while the average SiO₂/Si/SiO₂ to Cr etching selectivity for the ridge waveguide region was about 33:1 in case of the c-C₄F₈/90%Ar plasma with optimized parameters.     

Enhancement of photodetection based on perovskite/MoS2 hybrid thin film transistor

Perovskite/MoS₂ hybrid thin film transistor photodetectors consist of few-layered MoS₂ and CH₃NH₃PbI₃ film with various thickness prepared by two-step vacuum deposition. By implementing perovskite CH₃NH₃PbI₃ film onto the MoS₂ flake, the perovskite/MoS₂ hybrid photodetector exhibited a photoresponsivity of 10⁴A/W and fast response time of about 40 ms. Improvement of photodetection performance is attributed to the balance between light absorption in the perovskite layer and an effective transfer of photogenerated carriers from perovskite entering the MoS₂ channel. This work may provide guidance to develop high-performance hybrid structure optoelectronic devices.     

WO3/NiWO4复合薄膜的制备及其光电化学性能

采用两步水热法在导电玻璃(FTO)上制备了WO₃/NiWO₄复合薄膜。通过XRD,SEM表征了WO₃/NiWO₄复合薄膜的组成结构及微观形貌,利用UV-Vis、光电流测试、光电催化测试和交流阻抗测试分析了WO₃/NiWO₄复合薄膜的光电性能。结果表明:WO₃/NiWO₄复合薄膜相较于WO₃薄膜具有更好的光吸收特性、光电流密度和光电催化活性,其中水热反应3h的WO₃/NiWO₄复合薄膜的光电化学性能最佳。WO₃/NiWO₄-3h在1.4V(vs.Ag/AgCl)时的光电流密度为1.94mA/cm²,光电催化210min对亚甲基蓝溶液的降解效率为57.1%。交流阻抗图谱表明WO₃/NiWO₄薄膜的电荷转移电阻小于WO₃薄膜,光电化学性能更优。     

氧化铟纳米管的制备及它的甲苯气敏特性研究

Abstract： The pristine In2O3 nanotubes were synthesized by electrospinning and subsequent calcination. Scanning electron microscope, X-ray powder diffraction and transmission electron micrograph were employed to analyze the morphology and crystal structure of the as-synthesized nanotubes. Gas-sensing properties of the as-synthesized In203 nanotubes were investigated by exposing the corresponding sensors to toluene, acetone, ethanol, formalde- hyde, ammonia and carbon monoxide at 340 ℃. The results show that the gas sensor possesses a good selectivity to toluene at 340 ℃. The response of the In2O3 nanotube gas sensor to 40 ppm is about 5.88. The response and recovery times are about 3 s and 17 s, respectively.