实际大气中水汽3.2μm带的吸收

根据实际大气中测量的３．２μｍ带水汽的吸收和实际测量的光程中的水汽含量，似合出水汽３．２μｍ带的光学厚度随着水汽含量的温度变化的关系式，并与ＬＯＷＴＲＡＮ７的水汽经验计算模式进行了比较，两者符合得较好。     

InGaAs／GaAs垂直对准量子点超晶格的正入射红外吸收

利用分子束外延技术，生长了３０周期的ＩｎＧａＡｓ／ＧａＡｓ量子点超晶格，透射电镜表明各层量子点沿生长方向呈现很好的垂直对准，红外吸收测试观察以明显的垂直入射红外吸收，吸收范围为８．５～１０．４μｍ之间，峰值波长为９．９μｍ第一次实现了响应８～１２μｍ大气窗口的量子点的垂直入射红外吸收，这一结果预示了量子点超晶格结构在红外探测领域的潜在应用。     

多元多色HgCdTe红外探测器

简要介绍利用不同波段的微型滤光片和不同响应波段的多元ＨｇＣｄＴｅ红外探测器,叙述了通过精密镶嵌技术组合而成的四波段２１５～２２５μｍ、８４～８９μｍ、１０３～１１３μｍ和１１５～１２５μｍ８８元多元多色探测器的设计原理和特性,以及多元多色探测器的组合工艺,并给出了各个通道的响应光谱特性和探测器的工作性能。研制成功的８８元多色红外探测器每个通道的平均探测率和响应率分别为：Ｄ２．１５～２．２５＝１．２×１０１２ｃｍＨｚ１／２／Ｗ和Ｒ２．１５～２．２５＝５．０×１０６Ｖ／Ｗ,Ｄ８．４～８．９＝７．０×１０１０ｃｍＨｚ１／２／Ｗ和Ｒ８．４～８．９＝１．６×１０４Ｖ／Ｗ,Ｄ１０．３～１１．３＝４．０×１０１０ｃｍＨｚ１／２／Ｗ和Ｒ１０．３～１１．３＝４．３×１０３Ｖ／Ｗ,Ｄ１１．５～１２．５＝３．０×１０１０ｃｍＨｚ１／２／Ｗ和Ｒ１１．５～１２．５＝３．３×１０３Ｖ／Ｗ,文中对这些结果进行了分析和讨论。     

非晶硅X－射线探测阵列的研究

研制出ａ－Ｓｉ：Ｈｐｉｎ型Ｘ－射线间接探测线阵，它探测的是Ｘ－射线在闪光体（Ｃｓｌ）所激发的荧光，制备出单元面积分别为２．５×２．５ｍｍ２、１．６×１．６ｍｍ２和１００×１００μｍ２的１６、２５、３２０单元的线阵．器件的暗电流达到１e－１２Ａ／ｍｍ２（－１０ｍＶ），光灵敏度～０．３５μＡ／μＷ（６００ｎｍ）．本文报道了Ｘ－射线探测阵列的制备及测试结果．     

在0.8μm带泵浦的掺铥—钬ZBLYAN光纤放大器1.4μm带增益特性

日本ＮＴＴ光电子实验工厂的Ｔ．Ｓａｋａｍｏｔｏ等人在本文中叙述了１．４μｍ带掺铥钬ＺＢＬＹＡＮ光纤放大器的增益特性，对于７３．５ｍＷ的泵浦功率级，在整个１．４μｍ带可获得信号增益，对于０．７９μｍ下１５０ｍＷ的泵浦功能，在１．４６μｍ信号波长下获得了１８ｄＢ的最大信号增益，在１．４５～１．５０μｍ信号波长区，噪声系数为５．６ｄＢ，由掺铥－钬的ＺＢＬＹＡＮ光纤和掺铥ＺＢＬＹＡＮ光纤增益性能的比较，进     

60元3～5μmHgCdTe线列光导探测器

６０元３～５μｍＨｇＣｄＴｅ线列光导探测器徐国森（上海技术物理研究所上海２０００８３）本文简单报导了研制的６０元ＨｇＣｄＴｅ（３～５μｍ）线列光导探测器的工作性能，探测器灵敏元面积为６０ｐｍ×１００μｍ，在７７Ｋ，平均峰值探测率为９．５×１０￣（１０...     

多波段红外烟幕干扰特性测量系统的设计

介绍一种可对红外烟幕干扰特性进行定量测试手智能化测试仪器的设计方法,该系统采用微弱信号的数字化处理方案,可在野外环境超过２００ｍ的距离同时测量红外烟幕对１．０６μｍ,３－５μｍ,８－１２μｍ波段的干扰效果,测量精度优于１％,响应时间〈１ｓ。系统软件建立在Ｗｉｎｄｏｗｓ‘９５平台基础上,由图形化界面实现测试结果的显示与处理。     

1.3μm和1.55μm Si_(1-x)Ge_x波长信号分离器与Si_(1-x)Ge_x/Si应变超晶格探测器的集成

对１．３μｍ和１．５５μｍ波长的Ｓｉ１－ｘＧｅｘ波长信号分离器（ＷＳＤ）和Ｓｉ１－ｘＧｅｘ／Ｓｉ应变超晶格（ＳＬＳ）红外探测器的集成结构进行了系统的分析和优化设计．优化结果为：（１）对Ｓｉ１－ｘＧｅｘＷＳＤ，Ｇｅ含量ｘ＝０．０５．波导的脊高和腐蚀深度分别为３μｍ和２．６μｍ．对应于λ１＝１．３μｍ和λ２＝１．５５μｍ波长的波导脊宽分别为１１μｍ和８．５μｍ．（２）对Ｓｉ１－ｘＧｅｘ／ＳｉＳＬＳ探测器，Ｇｅ含量ｘ＝０．５．探测器的厚度为５５０ｎｍ，由２３个周期的６ｎｍＳｉ０．５Ｇｅ０．５＋１７ｎｍＳｉ组成．     

GaAs／GaAlAs中红外量子阱探测器和双色量子阱红外探测器

本文报道我们在国内率先研制的ＧａＡｓ／ＧａＡｌＡｓ中红外（３～５μｍ）量子阱探测器和双色量子阱红外探测器的制备和性能．ＧａＡｓ／ＧａＡｌＡｓ中红外量子阱探测器是光伏型，探测峰值波长为５．３μｍ，８５Ｋ下的５００Ｋ黑体探测率为３e９ｃｍ·Ｈｚ１／２／Ｗ，峰值探测率达到５×１０１１ｃｍ·Ｈｚ１／２／Ｗ，阻抗为５０ＭΩ．ＧａＡｓ／ＧａＡｌＡｓ双色量子阱红外探测器是偏压控制型的两端器件，在零偏压下该探测器仅在３～５μｍ波段有响应，响应峰值波长为５．３μｍ，８５Ｋ温度下５００Ｋ黑体探测率为３e９ｃｍ     

面阵IRCCD摄像芯片用折射微透镜阵列的离子束刻蚀制作

采用氩离子束刻蚀制作与一种１２８×１２８元ＰｔＳｉＩＲＣＣＤ摄像芯片匹配的单片硅折射微透镜阵列．所制成的微小光学阵列元件的填充系数高于９５％,每单元硅折射微透镜为矩底拱面形,其近轴光（３～５μｍ光谱波段）的焦距约为８０μｍ,给出了硅折射微透镜阵列的表面探针和扫描电子显微镜测试结果     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.