适用于器件级到系统级热仿真的IGBT传热模型

提出一种基于器件到系统的等级与传热网络结构本身的多时间尺度特征建立绝缘栅双极型晶闸管(IGBT)传热模型的建模方法。基于热传导理论和经典Cauer传热RC网络结构,建立IGBT传热网络结构模型,查明单层与多层热网络结构的结温运行规律以及简化标准与方法。在此基础上,以器件到系统对IGBT传热模型的不同需求为主线,以器件封装结构各层时间常数的不同时间尺度为切入点,建立适用于器件级到系统级热仿真的IGBT传热模型。仿真与实验结果验证了模型的正确性与高效性。所建立的IGBT传热模型对于查明IGBT器件的传热网络结构特征与结温运行规律,实现电力电子器件到系统的独立与联合仿真具有一定的理论意义和应用价值。     

Characteristics and utilization of a new class of low on-resistanceMOS-gated power device

A new class of MOS-gated power semiconductor devices Cool MOS (Cool MOS is a trademark of Infineon Technologies, Germany) has been introduced with a supreme conducting characteristic that overcomes the high on-state resistance limitations of high-voltage power MOSFETs. From the application point of view, a very frequently asked question immediately arises: does this device behave like a MOSFET or an insulated gate bipolar transistor (IGBT)? The goal of this paper is to compare and contrast the major similarities and differences between this device and the traditional MOSFET and IGBT. In this paper, the new device is fully characterized for its: (1) conduction characteristics; (2) switching voltage, current, and energy characteristics; (3) gate drive resistance effects; (4) output capacitance; and (5) reverse-bias safe operating areas. Experimental results indicate that the conduction characteristics of the new device are similar to the MOSFET but with much smaller on-resistance for the same chip and package size. The switching characteristics of the Cool MOS are also similar to the MOSFET in that they have fast switching speeds and do not have a current tail at turn-off. However, the effect of the gate drive resistance on the turn-off voltage rate of rise (dv/dt) is more like an IGBT. In other words, a very large gate drive resistance is required to have a significant change on dv/dt, resulting in a large turn-off delay. Overall, the device was found to behave more like a power MOSFET than like an IGBT     

A fast power loss calculation method for long real time thermal simulation of IGBT modules for a three‐phase inverter system

A fast power losses calculation method for long real time thermal simulation of IGBT module for a three‐phase inverter system is presented in this paper. The speed‐up is obtained by simplifying the representation of the three‐phase inverter at the system modelling stage. This allows the inverter system to be simulated predicting the effective voltages and currents whilst using large time‐step. An average power losses is calculated during each clock period, using a pre‐defined look‐up table, which stores the switching and on‐state losses generated by either direct measurement or automatically based upon compact models for the semiconductor devices. This simulation methodology brings together accurate models of the electrical systems performance, state of the art‐device compact models and a realistic simulation of the thermal performance in a usable period of CPU time and is suitable for a long real time thermal simulation of inverter power devices with arbitrary load. Thermal simulation results show that with the same IGBT characteristics applied, the proposed model can give the almost same thermal performance compared to the full physically based device modelling approach. Copyright © 2006 John Wiley & Sons, Ltd.     

Using reverse-blocking IGBTs in power converters for adjustable-speed drives

A new semiconductor power device that is urgently needed particularly in power converter topologies, the reverse blocking insulated gate bipolar transistor (RB-IGBT), has been realized by adding minor changes to the structure of a standard IGBT to make it capable of withstanding reverse voltage. However, the switching behavior of the device's intrinsic diode during reverse recovery is not as good as a discrete IGBT and series diode implementation. This paper analyzes the use of this device in three power converter topologies that may benefit from it, namely: 1) the matrix converter, 2) the two-stage direct power converter (DPC), and 3) the three-level voltage source rectifier. A commutation method to override the poor reverse-recovery characteristic of the RB-IGBT intrinsic diode in a two-stage DPC is proposed. A loss analysis shows that by using RB-IGBTs the efficiency of the two-stage DPC becomes similar to a two-level voltage source converter.     

一种中电压大功率IGBT模块行为模型

目前已有场终止型绝缘栅双极性晶体管(IGBT)行为模型以及仿真软件中的IGBT模型未专门针对中电压大功率IGBT模块搭建,不能准确模拟其区别于中小功率IGBT的行为特性。在已有行为模型基础上,提出引入IGBT基区存储电荷造成的等效电容及模块封装键合丝带来的寄生电感,考虑反并联PIN二极管行为模型,从而有针对性地实现了完整中电压大功率IGBT模块行为模型。同时提出了新的米勒电容函数拟合方法,量化分析行为模型完整开关过程中典型行为与模型参数的关系,通过较简便的方法实现了模型参数的提取。最后在Pspice环境下实现了一种3.3k V/1.5k A等级IGBT行为模型,并通过在Buck电路下仿真与实验波形对比证明了该行为模型的可行性和有效性。     

IGBT模块材料选型的仿真研究

作为电力电子变换器的核心器件,IGBT功率模块的可靠性是目前学术界和工业界关注的重点。本文借助有限元分析软件,根据IGBT模块的实际结构,构建了IGBT模块的电-热-力仿真模型。针对目前IGBT模块键合线失效的难题,研究了不同键合线材料与表面金属化层材料的选型对模块温度云图及应力云图的影响。仿真结果表明键合线材料的选型与模块内部的温度分布具有较强的相关性,金属化层材料的选型与模块内部的应力分布具有较强的相关性。因此,通过合理选择模块表面金属化层与键合线材料类型能极大程度降低模块内部的温度和应力,进而降低键合线失效的风险,提高模块的可靠性。     

IGBT模块栅氧老化机理分析与表征方法研究

绝缘栅双极型晶体管IGBT（insulated gate bipolar transistor）作为电力电子系统的核心器件,广泛应用于新能源发电、轨道机车牵引、电动汽车驱动以及航空航天等重要领域。栅氧层作为IGBT中相对薄弱的环节,如何准确地预测IGBT栅氧层老化状态成为学术界和工业界的研究热点。首先,分析IGBT栅氧层老化机理以及栅氧层老化对IGBT关断过程的影响,提出关断延迟时间td(off)作为IGBT栅氧层老化状态的状态参数。其次,建立IGBT栅氧层老化仿真模型,并对td(off)表征IGBT栅氧层老化状态进行仿真分析。最后,搭建了双脉冲实验平台,获得了栅氧层老化影响IGBT功率模块相关电气参数的实验结果,并与仿真结果进行了比较验证。实验结果证明td(off)可以有效地表征IGBT栅氧层老化状态。该研究对电力电子器件和装置的运行维护与状态预测具有重要的应用价值。     

电力电子器件绝缘栅双极晶体管的应用与保护（续一）

介绍了电力电子器件的分类和发展。将电力电子装置中的主流器件绝缘栅双极晶体管IGBT与其它电力电子器件性能进行了比较。提出了IGBT应根据实际情况,采取相应的保护措施,方可保证IGBT在应用中得到良好效果,并保证IGBT安全可靠的工作。     

基于IGBT的宽范围线性功率放大技术

模块化多电平分级逐段线性化思想可以大幅提高线性功率放大器的效率,绝缘栅双极型晶体管IGBT(insulated gate bipolar transistor)作为一种大功率器件用于其中将会大大简化大功率放大器的电路,但IGBT的类别中没有P沟道管,传统的复合P管用于线性功率放大时存在输出电压动态范围不足的问题.首先分...     

基于键合线压降的IGBT模块内部缺陷监测研究

为了准确地评估出IGBT模块的健康水平,及时发现并更换存在缺陷的IGBT模块,提高功率变流器的可靠性,提出了一种基于键合线压降的IGBT模块内部缺陷诊断方法。通过监测IGBT模块内部单个芯片等效键合线压降的变化,辨识出IGBT模块内键合线的老化状态,进而判断出IGBT模块的健康水平。实验结果表明,基于键合线压降的IGBT模块内部缺陷诊断方法能准确地辨识出模块内键合线的老化过程,与采用监测门极信号辨识模块老化状态的方法相比,所提方法不仅能辨识出单个芯片全部键合线脱落的情况,而且能辨识出部分键合线老化的情况,在辨识精度上有了很大的提高。该方法为确定合适的时机对变流器进行维护、降低系统的维护成本提供了理论依据。     

Iron Loss Characteristics of Electrical Steel Sheet under Inverter Excitation by Power Semiconductor with Extremely Low On‐Voltage Property

In this study, it is demonstrated that the iron loss from the SiC‐MOSFET, which represents a new power semiconductor with an extremely low on‐voltage for electric machine drives, is almost the same as that from an Si‐IGBT, which is a conventional power semiconductor. In order to evaluate the iron loss characteristics when an SiC device is used, two single‐phase pulse width modulation inverters were built and used for the excitation of a ring made up of electrical steel sheet. One of the inverter employed an SiC‐MOSFET, and the other inverter employed an Si‐IGBT. The iron losses for the two inverters are compared.     

Ratings of semiconductors for AC drives

This paper discusses the characteristics and limitations of various power semiconductors used in motor controls and drives. Semiconductor types discussed include the insulated gate bipolar transistor (IGBT), transistor (bipolar and MOS device), SCR, gate-turn-off transistor (thyristor) (GTO), and diode. Important limitations, including voltage rating, current ratings, safe operating area, heat transfer characteristics, and limitations due to a particular device characteristic are discussed. The focus is on the IGBT; its advantages and disadvantages are discussed, as well as how it can be rated in a drive application     

Insulated gate bipolar transistor (IGBT) modeling using IG-SPICE

A physics-based model for the insulated gate bipolar transistor (IGBT) is implemented into the widely available circuit simulation package IG-SPICE. Based on analytical equations describing the semiconductor-physics, the model accurately describes the nonlinear junction capacitances, moving boundaries, recombination, and carrier scattering, and effectively predicts the device conductivity modulation. In this paper, the procedure used to incorporate the model into IG-SPICE and various methods necessary to ensure convergence are described. The effectiveness of the SPICE-based IGBT model is demonstrated by investigating the static and dynamic current sharing of paralleled IGBTs with different device model parameters. The simulation results are verified by comparison with experimental results     

IGBT栅极特性与参数提取

绝缘栅双极型晶体管(IGBT)在各种电力电子装置中已得到了广泛的应用,但是长期以来对于其内部参数的提取缺乏有效的手段,从而影响了其仿真模型的应用以及使用水平的提高。本文对IGBT栅极的传统平面结构和新型沟槽结构进行了比较,基于其工作机理与半导体物理方程进行了理论分析和公式推导,在分析现有方法不足的基础上提出了IGBT栅极各个参数提取的一些新方法,并且针对某一型号具体器件在不同工作条件下进行了提取实验,所得到的参数值都具有较好的一致性,同时也证明了该方法的准确性。     

高频条件下对IGBT逆变器缓冲电路的改进

绝缘栅双极晶体管（IGBT）逆变器多应用在变频器、开关电源和分布式发电系统等工作频率较高的场合。逆变器工作频率越高,缓冲电路吸收的过电压能量在开关器件下一次关断动作前放电完毕的时间就越短。提出了一种改进型IGBT逆变器缓冲电路,通过改变放电回路的放电电容,可以满足IGBT逆变器在高频应用下的要求。通过理论分析和电路仿真,证明了该改进型缓冲电路的有效性和适用性。     

EMTP modeling of IGBT dynamic performance for power dissipationestimation

A new approach to the modeling of insulated gate bipolar transistors (IGBTs) for electromagnetic transients program (EMTP) simulation is developed. Other commercially available simulators, such as PSPICE, model the devices on an exact semiconductor physics basis. They suffer from large amounts of CPU time for sinewave pulsewidth modulation (PWM) inverter applications which require a complete cycle simulation at fundamental frequency with a small time step to cover the details of IGBT switching transients. This approach uses a curve-fitting method, combined with the point-by-point user-defined function available in EMTP, to model the dynamic characteristics of IGBTs. Since there is no device physics modeling required, this simulation is much faster than the conventional approach. The proposed method is applicable to both static and dynamic modeling, on a cycle-by-cycle basis, which is important for dynamic power dissipation and thermal analysis. The simulation includes IGBT turn-on and turn-off transients, IGBT saturation, free-wheeling diode forward voltage and reverse recovery characteristics. The simulation results are verified by comparison with experimental measured data. Measurements show a close agreement with simulations     

适用于电路仿真的IGBT模块暂态模型研究

高压IGBT与二极管构成IGBT模块已经广泛应用于柔性直流输电技术领域。然而现有仿真研究难以模拟IGBT模块中IGBT与二极管各自详细开关暂态特性及相互影响,因此提出一种适用于电路仿真的IGBT模块暂态模型及其参数通用提取方法。模型采用机理推导、电气等效、曲线拟合等方法在PSCAD、SABER等电路仿真平台实现,无需获取器件底层参数和求解复杂物理方程,不仅可以实现电路仿真中IGBT模块的各种运行状态,而且可以在纳秒级步长下模拟其电压电流尖峰、拖尾电流、米勒平台等开关暂态特性。通过与SABER中通用模型仿真结果及实验实测波形对比分析,验证了IGBT模块暂态模型和参数提取方法的正确性和通用性,为进一步将模型应用于柔性直流输电系统仿真、电磁干扰及损耗分析、控制策略等研究打下基础。     

IGBT器件的发展现状以及在智能电网中的应用

以绝缘栅双极型晶体管(insulated-gate bipolar transistor,IGBT)为代表的可关断半导体功率器件的成熟应用,推动了电力电子技术的又一次革新。首先介绍IGBT在智能电网中应用的重要性,对20多年来IGBT器件在芯片和封装等技术在国内外的发展水平进行回顾。重点分析IGBT的选型特点和在电网中的典型应用,最后分析在这些应用中使用IGBT器件所带来的深远影响。     

Evaluation of modern power semiconductor devices and future trendsof converters

The author reviews the modern power semiconductor devices that appeared in the 1980s, i.e., the insulated gate bipolar transistor (IGBT), static induction transistor (SIT), static induction thyristor (SITH), and the recently introduced MOS-controlled thyristor (MCT). The characteristics of these devices are discussed and compared from the viewpoint of power electronics applications. Although the IBGT is well known, the power electronics community is somewhat unfamiliar with the latter three devices. For completeness, a brief review of other power devices, such as the thyristor, triac, gate turn-off thyristor (GTO), bipolar transistor (BJT), and power MOSFET is also incorporated. Future trends are outlined