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以多壁碳纳米管为基本材料,利用电子束诱导沉积的方法进行了纳米结构加工、修饰研究.电子束诱导沉积实现了二个碳纳米管端部之间的牢固焊接,实现了纳米材料间的几乎无损伤连接.原位测量表明多壁碳纳米管间的连接为欧姆接触.进一步对碳纳米管施加外电场可以使端部碳原子间的π键打开,外部碳原子经电子束诱导沉积在碳纳米管的端部,并定向生长成非晶态碳纳米线.由于碳纳米管和纳米线结合处的.键作为绝缘界面,形成了电子输运的势垒,所得到的碳纳米管-纳米线复合结构具有整流特性.利用电子显微镜进行纳米材料的结构加工、修饰,具有选择位置精确、可实时监测、对纳米材料几乎无损伤、重复性和可靠性高,以及加工尺度可人为控制的特点. 相似文献
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本文演示了运用精确电压衬度像技术实现原位电子束纳米刻蚀技术的精确定位,并运用该技术制作成具有悬挂结构的纳米开关。通过运用精确电压衬度像定位技术,能够很好地控制偏转电极的定位,误差可减少到大约10nm。通过该技术,不用通过任何刻蚀过程只运用一次电子束纳米刻蚀,便可实现将分散的纳米线夹在两个电阻层中间形成悬挂结构。在原位电子束刻蚀的整个过程中,无需移动样品台从而消除了样品台的移动误差。因此,整个过程中不需要高精确的激光台和定位标记,从而简化了传统的电子束纳米刻蚀工艺。通过该方法制作的纳米开关随着施加电压的改变很好地实现了闭合和断开的状态。这种简化的过程提供了一种简单、低成本、快速的通过改装过的场发射扫描电子显微镜(FESEM)来制作纳米线悬挂结构的方法,并可运用该技术进一步制造多层结构和特殊的纳米器件。 相似文献
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电子束光刻在纳米加工及器件制备中的应用 总被引:2,自引:0,他引:2
电子束光刻技术是推动微米电子学和微纳米加工发展的关键技术,尤其在纳米制造领域中起着不可替代的作用。介绍了中国科学院微电子研究所拥有JEOLJBX5000LS、JBX6300FS纳米电子束光刻系统和电子显微镜系统的电子束光刻技术实验室,利用电子束直写系统所开展的纳米器件和纳米结构制造工艺技术方面的研究。重点阐述了如何利用电子束直写技术实现纳米器件和纳米结构的电子束光刻。针对电子束光刻效率低和电子束光刻邻近效应等问题所采取的措施;采用无宽度线曝光技术和高分辨率、高反差、低灵敏度电子抗蚀剂相结合实现电子束纳米尺度光刻以及采用电子束光刻与X射线曝光相结合的技术实现高高宽比的纳米尺度结构的加工等具体工艺技术问题展开讨论。 相似文献
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Hwan Chul Jeon Chul‐Joon Heo Su Yeon Lee Seung‐Man Yang 《Advanced functional materials》2012,22(20):4268-4274
A novel, highly uniform and tunable hybrid plasmonic array is created via ion‐milling, catalytic wet‐etching and electron‐beam evaporation, using a holographically featured structure as a milling mask. A simple and low‐cost prism holographic lithography (HL) technique is applied to create an unprecedentedly coordinated array of elliptic gold (Au) holes, which act as the silicon (Si) etching catalyst in the reaction solution used to fabricate an elliptic silicon nanowire (SiNW) array; here, the SiNWs are arrayed hierarchically in such a way that three SiNWs are triangularly coordinated, and the triangles are arranged hexagonally. After removing the polymeric mask and metal thin film, the highly anisotropic thick Au film is deposited on the SiNW arrays. This hybrid substrate shows tunable optical properties in the near‐infrared (NIR) region from 875 nm to 1030 nm and surface‐enhanced Raman scattering (SERS) activities; these characteristics depend on the catalytic wet etching time, which changes the size of the vertical gap between the Au thick films deposited separately on the SiNWs. In addition, lateral interparticle coupling induces highly intensified SERS signals with good homogeneity. Finally, the Au‐capped elliptical SiNW arrays can be hierarchically patterned by combining prism HL and conventional photolithography, and the highly enhanced fluorescence intensity associated with both the structural effects and the plasmon resonances is investigated. 相似文献
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Semiconductors - Effect of an isolated Ge nanowire embedded in an n-doped Si on electron beam induced current is simulated by a Monte Carlo calculation algorithm. A circular nano-contact is used to... 相似文献
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Nanofabrication is possible using focused ion beam technology, but the observation of these structures with the same ion beam is not possible because of its erosion effect. Therefore a general purpose instrument for nanotechnology based on particle optics has to combine an ion and an electron beam. The objective lens, the final lens above the specimen, has to focus both beams on the specimen. An objective lens that combines magnetic and electrostatic fields has been designed for this purpose. Its aberration coefficients allow a 1 nm ion beam and a 0.3 nm electron beam. 相似文献
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I. P. Soshnikov K. P. Kotlyar N. A. Bert D. A. Kirilenko A. D. Bouravleuv G. E. Cirlin 《Semiconductors》2018,52(5):605-608
The detailed study of GaAs nanowires synthesized by molecular beam epitaxy performed by scanning electron microscopy allowed to reveal the presence of specific contrast in the images obtained. To understand the causes of the phenomenon the transmission electron microscopy of nanowire crystal structure was carried out. The results showed that it could be caused by the segments having polytypic crystal phase. It was also confirmed by the modelling of the electron beam scattering on such nanowire arrays. 相似文献
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Sasaki H Matsuda T Kato T Muroga T Iijima Y Saitoh T Iwase F Yamada Y Izumi T Shiohara Y Hirayama T 《Journal of electron microscopy》2004,53(5):497-500
We have developed a focused ion beam (FIB)-Ar ion-milling technique for high-resolution transmission electron microscopy. A micrometresized specimen was mounted on a cross section of metal foil of a few micrometres thick, using FIB microsampling. Following this, a 2 degrees wedgeshaped part was made in the specimen using FIB. Finally, the specimen was milled using an Ar ion beam to remove the FIB-damaged layers. We applied the FIB-Ar ion milling technique to a CeO(2)/Gd(2)Zr(2)O(7) multilayer specimen, resulting in the crystal lattice fringes of both layers being clearly observable in comparison to a specimen finished using a Ga ion beam at an accelerating voltage of 10 kV. 相似文献
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In this paper, the achievement of nearly intrinsic InN nanowire is reported. With the use of an in situ deposited In seeding layer, nearly defect‐free, non‐tapered InN nanowires are grown directly on Si(111) substrates by molecular beam epitaxy. The photoluminescence emission of a single InN nanowire is analyzed, which exhibits, for the first time, a very narrow (~13 meV) spectral linewidth, a clear band filling effect with the increase of excitation power, and a significant red shift of the peak energy with increasing temperature. Detailed analysis confirms the InN nanowire has a very low residual doping of ~1 × 1016 cm?3, or less. It is further suggested that there is a small, or negligible level of electron accumulation at the lateral nonpolar surfaces of nearly intrinsic InN nanowires, which is in direct contrast to the commonly observed surface electron accumulation of n‐type degenerate InN. 相似文献
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Manuel Reinhard Ralph Eckstein Anatoliy Slobodskyy Uli Lemmer Alexander Colsmann 《Organic Electronics》2013,14(1):273-277
We present a transparent, fully solution-processed top anode system comprising a thin, conductive polymer interlayer below a silver nanowire mesh for efficient organic electronic devices. We fabricate inverted semi-transparent polymer solar cells exhibiting power conversion efficiencies that are comparable to devices incorporating an opaque electrode. By means of scanning electron microscopy and light beam induced photocurrent measurements we show that the thin polymer interlayer facilitates charge extraction from the active layer and efficient transport to the metallic nanowire mesh. 相似文献
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Masayuki Murata Hiroya Yamamoto Fumiaki Tsunemi Yasuhiro Hasegawa Takashi Komine 《Journal of Electronic Materials》2012,41(6):1442-1449
Four-wire resistance measurements were performed using a bismuth nanowire, 750?nm in diameter, 1.96?mm in length, and encapsulated in a quartz template. One side of the quartz template was polished to allow focused ion beam (FIB) processing, and metal film layers were deposited on the polished side to form electrodes. Nanofabrication was employed to remove a selected portion of the quartz, and FIB processing was used to expose the surface of the bismuth nanowire. A local area of the bismuth wire was successfully exposed, and a carbon electrode was deposited on the bismuth wire in?situ by a chemical reaction between the ion beam and phenanthrene gas. Additional carbon deposition on the initial carbon electrode was used to connect to a metal film on the quartz template. In total, four nanofabrications were performed on the bismuth wire to create the desired electrical contacts. The resistivity of the nanowire was measured by a four-wire method to be 1.29??????m at 300?K, corresponding to that of bulk bismuth. The temperature dependence of the resistivity was also measured, and was qualitatively and quantitatively in good agreement with previous calculated and experimental results using other bismuth nanowires. The present results demonstrate the successful development of a technique to fabricate an electrode on a local area of a nanowire using FIB processing to form suitable electrical contacts. 相似文献
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A new technique has been developed for the three-dimensional structure characterisation of a specific site at atomic resolution. In this technique, a focused ion beam (FIB) system is used to extract a specimen from a desired site as well as to fabricate the electron transparent specimen. A specimen holder with a specimen stage rotation mechanism has also been developed for use with both an FIB system and a high-resolution transmission electron microscope (TEM). The specimen holder allows both the FIB milling of a specimen and its observation in TEM without remounting the specimen from the specimen holder. A specimen for the three-dimensional TEM observation is extracted using the FIB micro-sampling technique and shaped into a pillar to mount on a tip of a needle stub enabling a multidirectional observation. The technique was applied to the multidirectional observation of the crystal structure of an Si single crystal at atomic resolution. The crystal lattice fringes of the two Si(111) planes with distances of 0.31 nm as well as the lattice fringes of the Si(200) with distances of 0.19 nm were clearly observed. 相似文献
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M. Bescond M. Lannoo F. Michelini L. Raymond M.G. Pala 《Microelectronics Journal》2009,40(4-5):756-758
We report a numerical study of both donor- and acceptor doping impurity effects in the quantum transport of silicon nanowire metal-oxide-semiconductor (MOS) transistors. The code is based on a full three-dimensional (3D) real-space non-equilibrium green function (NEGF) formalism self-consistently coupled with the 3D Poisson equation. The general results show that the influence of an impurity strongly depends on its type. Indeed, an acceptor or a donor will create a repulsive or attractive potential, giving rise to tunneling effect or resonances, respectively. Our calculations analyze the impact on electron density, transmission coefficient and drain current (ID) which undergoes variations up to 50%. This pinpoints the importance of intrinsic fluctuations due to doping in ultimate nano-transistors whose magnitude cannot be neglected in the next generations of integrated circuits. 相似文献