共查询到19条相似文献,搜索用时 125 毫秒
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在制备多孔硅材料时,多孔硅的多孔度和厚度与电解电流强度、电解时间以及氢氟酸的浓度有关.如果氢氟酸的浓度保持不变,通过改变电解时间和电解电流强度就可以得到所需多孔硅的多孔度及厚度.但现在一般都通过测量设备来重复测量多孔硅的多孔度及厚度,特别是多层多孔硅,很难严格控制其厚度.为此,通过对多孔硅中载流子运动的研究,结合BET方程中的SBET定义,推导出多孔硅的多孔度、电解速度和电解电流强度之间的关系表达式.通过该理论公式,就可以保证精确得到多孔硅的多孔度及厚度.该理论公式得到了实验的验证. 相似文献
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光电材料多孔硅的多孔度理论计算方程 总被引:1,自引:0,他引:1
在制备多孔硅材料时 ,多孔硅的多孔度和厚度与电解电流强度、电解时间以及氢氟酸的浓度有关 .如果氢氟酸的浓度保持不变 ,通过改变电解时间和电解电流强度就可以得到所需多孔硅的多孔度及厚度 .但现在一般都通过测量设备来重复测量多孔硅的多孔度及厚度 ,特别是多层多孔硅 ,很难严格控制其厚度 .为此 ,通过对多孔硅中载流子运动的研究 ,结合 BET方程中的 SBET定义 ,推导出多孔硅的多孔度、电解速度和电解电流强度之间的关系表达式 .通过该理论公式 ,就可以保证精确得到多孔硅的多孔度及厚度 .该理论公式得到了实验的验证 相似文献
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《Electron Devices, IEEE Transactions on》1984,31(3):297-302
Processing steps of FIPOS (Full Isolation by Porous Oxidized Silicon) technology and its application to LSI's are presented, FIPOS technology realizes a silicon-on-insulator structure, utilizing thick porous oxidized silicon and donors produced by proton implantation. New processing steps are proposed which provides small surface step and are suitable for LSI fabrication. Formation conditions of thick porous oxidized silicon are established by density control technique for porous silicon using a newly developed anodization system. CMOS devices are fabricated in isolated silicon layers and it is shown that the characteristics of n-channel and p-channel MOSFETS's are sufficient for application to CMOS LSI's. A FIPOS/CMOS logic array with 1.3K gate is successfully fabricated, which shows a higher speed and lower power dissipation than the gates fabricated by bulk CMOS technology. These results indicate that FIPOS technology is very useful for realizing high-performance CMOS LSI's. 相似文献
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多孔硅(Porous Silicon,PS)平面阴极的场发射电子能量高、发散角小、对真空度不敏感、响应快,尤其适合用作场发射显示的电子源,基于PS阴极的无放电气体激发发光也为新型环保的高效平面光源技术带来了希望。本文介绍了PS阴极的电子发射原理及其研究进展,展望了其在显示技术、无放电气体激发发光技术、金属线沉积、电子束刻蚀以及其他领域的应用前景。 相似文献
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G. García Salgado R. Hernández J. Martínez T. Díaz H. Juárez E. Rosendo R. Galeazzi A. García G. Juárez 《Microelectronics Journal》2008,39(3-4):489-493
Porous silicon photodetectors obtained by electrochemical etching of p-type non-polished crystalline silicon were studied. A metal-porous silicon structure was used to obtain the rectifying behavior. The geometry of the metal layer deposited by thermal evaporation on the porous zone was modified with different masks fabricated using a photolithographic method. The samples obtained under different anodization conditions were characterized by PL. The sample that showed the best intensity in photoluminescence, centered on 675 nm, was selected and five samples obtained under these conditions were prepared to compare the difference in the photoresponse because of the geometry of the evaporated metal layer. The responsivities obtained show us an important difference between the devices and allow us to propose a specific geometrical pattern to obtain a better response in this kind of devices. 相似文献
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对采用阳极氧化法及阴极还原表面处理技术制备的性能稳定的纳米多孔硅,用原子力显微镜(AFM)表征了其微观结构,多孔硅颗粒粒径在30 nm左右.室温条件下测试了多孔硅场电子发射的特性,结果表明,多孔硅具有很好的场致发光性能,在5 V/μm的电场下就可以产生场发射电流.多孔硅的开启电压在1 000 V左右,发射电流随着电压的增大而不断增大,发射电压在2 000 V以上.Abstract: Nanoscale porous silicon (PS) was prepared by anodic oxidation, cathode reduction and surface treatment technique. The porous silicon particles with the average diameter of about 30 nm were obtained by characterizing their microstructure with atomic force microscope (AFM). Electron field emission characteristics of porous silicon were investigated at room temperature. The resuhs demonstrate that porous silicon has favorable electroluminescence properties, and the field emission current can be generated only under the electric field of 5 V/ μm. And the turn - on voltage is about 1 000 V. With the increase of the offered voltage, the emission current is enhanced and the emission voltage is over 2 000 V. 相似文献
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Experiments with light-emitting porous silicon (LEPOS) are described. The porous silicon was made from n-type silicon by anodization in an electrolytic cell by HF with an applied electrical current. Visible light emission was achieved by irradiation with ultraviolet light. Visible electroluminescence (EL) was achieved by applying a DC or AC voltage to a solid-state contact on top of the porous layer. Optical spectra from both experiments are shown 相似文献
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The origin of photoconductivity in porous structures formed by anodization of GaN/SiC heterostructures has been studied. It
is shown by comparing the photoelectric, optical, electrical, and structural properties of untreated and anodized heterostructures
that this effect is due to the presence of charged states at the interface between GaN and SiC that are specific to the anodization
conditions. 相似文献
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Combustion and explosion in layers of nanostructured porous silicon has been studied in relation to the layer thickness and duration of sample storage after electrochemical anodization. The amount of hydrogen adsorbed on the surface of porous silicon after anodic treatment is evaluated. The amount of hydrogen accu-mulated in porous silicon is 4 wt %. Prototype microsystem devices employing the energy of the processes studied have been developed and fabricated. The combustion of porous silicon can be used as an energy source for silicon microactuators and the microexplosion can be employed both in self-destructing silicon chips and for dividing silicon wafers into separate crystals. 相似文献