BiFeO_3掺杂对CaCu_3Ti_4O_(12)陶瓷结构和介电性能的影响

采用固相反应法制备了BiFeO3掺杂的CaCu3Ti4O12(CCTO)陶瓷,研究了BiFeO3掺杂量对CCTO陶瓷的烧结性能、晶体结构和介电性能的影响。结果表明,BiFeO3掺杂改善了CCTO陶瓷的烧结性能。随BiFeO3掺杂量的增加,CCTO陶瓷的晶格常数和εr均先增大而后减小;而tanδ先几乎不变而后增大。当x(BiFeO3)为0.5%,1040℃烧结的CCTO陶瓷样品在1kHz时具有巨介电常数(εr=14559)和较低的介质损耗(tanδ=0.12)。     

Ba6-3xNd8+2xTi18O54陶瓷的微波合成及低温烧结

采用微波加热法于1 100℃保温30 min(升温速率为20℃/min)合成Ba6-3xNd8+2xTi18O54(x=0.30～0.75,BNT)陶瓷粉末,再添加质量分数45％的B2O3-SiO2-CaO-MgO( BM)玻璃,在马弗炉中于900℃烧结2h制得BNT陶瓷.研究了所制陶瓷的微观结构及性能.结果表明:微波...     

低温烧结CuO改性PZT压电陶瓷性能研究

为了降低铅基压电陶瓷的烧结温度,采用传统固相法制备了CuO掺杂改性的Pb (Zr0.52Ti0.48)2O3 (PZT)二元压电陶瓷.研究了CuO掺杂对所制PZT陶瓷的结构和性能的影响.XRD显示随CuO掺杂量增加,特征峰向低角度移动,SEM显示烧结晶粒先增加后减小,CuO的加入促进了烧结.CuO和PbO生成低共熔物,...     

(Na_(1/2)Nd_(1/2))TiO_3陶瓷的晶体结构及微波介电性能

通过固相烧结法制备了具有高介电常数的(Na1/2Nd1/2)TiO3微波介质陶瓷,研究了烧结温度对该陶瓷微观结构及微波介电性能的影响。结果表明,在烧结温度低于或等于1 350℃时,所制陶瓷样品的主晶相为立方相的(Na1/2Nd1/2)TiO3;当烧结温度高于1 350℃时,所制陶瓷样品的主晶相变为四方相的Nd0.667TiO3。陶瓷样品的相对介电常数和品质因数随着烧结温度的升高均先增大后减小,在烧结温度为1 300℃时所制陶瓷样品最为致密,并具有最佳的微波介电性能,εr=110.06,Q×f=8 147 GHz,τf=244.6×10–6/℃。     

BaCu(B2O5)的添加对Li2MgTi3O8微波介质陶瓷性能的影响

采用传统固相反应法制备Li2MgTi3O8微波介质陶瓷,研究了BaCu(B2O5)(简称BCB)的添加对Li2MgTi3O8微波介质陶瓷的烧结性能及介电特性的影响.结果表明:BCB作为低熔点氧化物烧结助剂,可有效降低所制陶瓷烧结温度,而且可以调节τf近零.当添加质量分数3％的BCB,900℃烧结所制陶瓷的综合微波介电性...     

Co和Ca掺杂对(Mg0.7Zn0.3)TiO3系微波介质陶瓷性能的影响

采用固相反应法制备了(1-y)(Mgo.7Zn0.3)1-xCoxTiO3-yCaTiO3(MZCCT)(x=0～0.2,Y=0.03～0.09)微波介质陶瓷.研究了Co和Ca掺杂对所制陶瓷的相结构、烧结性能和介电性能的影响.Co掺杂后,MZCCT陶瓷的密度增大,Q·f值从90 000 GHz提高到152 000 GH...     

H_3BO_3掺杂Li_2ZnTi_3O_8陶瓷的微波介电性能

采用传统的固相烧结工艺制备了H3BO3掺杂的Li2ZnTi3O8陶瓷。研究了H3BO3掺杂量对所制Li2ZnTi3O8陶瓷的烧结特性、相成分、微观结构以及微波介电性能的影响。结果表明:H3BO3对于所制陶瓷相成分没有影响,仅为单一的Li2ZnTi3O8相;H3BO3能够将Li2ZnTi3O8陶瓷的烧结温度降低200℃左右,同时没有显著损害该陶瓷的微波介电性能;当H3BO3掺杂量为质量分数2.0%时,950℃烧结的Li2ZnTi3O8陶瓷微波具有良好的介电性能:εr=25.99,Q.f=54 926GHz,τf=-12.17×10–6/℃。     

球磨时间对硼硅玻璃基复相陶瓷性能的影响

采用经过不同球磨时间制备的硼硅玻璃与氧化铝复合,低温烧结制备了硼硅玻璃/氧化铝系复相陶瓷.利用XRD和SEM,研究了硼硅玻璃粉料球磨时间对流延成型及所制复相陶瓷的烧结性能、介电性能(10MHz)的影响.结果表明:随着球磨时间增加,粉料粒径减小,硼硅玻璃复相陶瓷烧结温度降低,密度增加,介电常数和介质损耗降低.球磨90 m...     

钛酸铋掺杂对BaTiO3-Nb2O5-ZnO陶瓷微结构和介电性能的影响

采用固相反应法制备了Bi4Ti3O12(BIT)掺杂的BaTiO3-Nb2O5-ZnO(BTNZ)陶瓷,研究了BIT掺杂对所制陶瓷晶体结构、烧结性能及介电性能的影响.结果表明:BIT掺杂改善了BTNZ陶瓷的烧结特性.随着BIT量的增加,四方率c/a增大,电容变化率减小.当质量分数w(BIT)为1.0%,1 230℃烧结...     

Y和Cr共掺杂BiFeO_3陶瓷的多铁性能研究

采用固相反应法制备了Y_2O_3和Cr_2O_3共掺杂BiFeO3陶瓷,研究了Bi_(0.9)Y_(0.1)Fe_(1–x)Cr_xO_3(BYFC_x,x=0,0.002,0.004,0.006,0.008)陶瓷的多铁性能。XRD分析表明,经850℃烧结的BYFC_x陶瓷形成了三方钙钛矿结构固溶体。随着Cr掺杂量增加,BYFC_x陶瓷在室温下的铁磁性能和铁电性能提高明显。当x为0.004时,所制陶瓷的铁磁性能最好,剩余磁化强度Mr为0.23A·m~2/kg,饱和磁化强度Ms为3.15A·m~2/kg,矫顽力Hc为2.3kA/m。Mr、Ms和Hc随着Cr掺杂量的增加先增大后减小。     

(1-x)BiFeO3-xCoFe2O4复合陶瓷介电性能的研究

采用传统的固相烧结工艺制备3种不同摩尔比的(1-x)BiFeO3-xCoFe2O4(简称(1-x)BFO-xCFO,x为摩尔分数,且x=0.1,0.3,0.5)复合陶瓷样品,并分析了其在室温和变温下的介电性能。研究结果表明,室温下陶瓷样品的介电常数和介电损耗均随CFO含量的增加而降低;当频率大于100kHz时,样品的介电常数随CFO含量的增加而变化不大;当x(CFO)=0.1时,样品在高频时介电损耗变小,而当x(CFO)=0.3或0.5时,陶瓷样品的介电损耗明显大于纯BFO陶瓷的介电损耗。在高温情况下,由于CFO的添加使陶瓷样品存在更多的缺陷活化及CFO所造成的漏电流,使样品在低频时的介电常数与介电损耗都变得很大。在100kHz频率下的交流导电率均随着温度的增加而减少;且相同温度下样品中包含的CFO含量越大其交流导电率也越大。当x(CFO)=0.3和0.5时,复合陶瓷样品的交流导电率随温度的变化规律几乎相同,且它们在相同温度下的交流导电率比纯BFO的大5～6个数量级。     

保温时间对钙钡硼硅复相陶瓷性能的影响

通过对钙钡硼硅玻璃与氧化铝的混合物进行烧结,制备了可用于低温共烧陶瓷基板的硼硅酸盐玻璃/α-Al2O3系复相陶瓷。研究了保温时间对所制复相陶瓷的微观结构、烧结性能和介电性能的影响。结果表明:随着保温时间的延长,所制复相陶瓷的体积密度、吸水率和介电常数先增大后减小,而介质损耗则是先减小后增大。于850℃烧结、保温20 min制得的复相陶瓷的性能最佳,其体积密度为3.12 g.cm–3,吸水率为0.11%,10 MHz下的相对介电常数和介质损耗分别为7.88和1.0×10–3。     

Preparation and characterization of BaTiO3 powders and ceramics by sol-gel process using hexanoic and hexanedioic acid as surfactant

The BaTiO₃ xerogels, powders and ceramics were prepared through the sol-gel process using hexanedioic acid as surfactant. The xerogels, powders and ceramics were characterized by methods of thermal analysis, Fourier transform infrared spectroscopy, X-ray diffraction, scanning electron microscope, and transmission electron microscope. The dielectric properties of the ceramics were also measured. The results indicated that the powders calcined at 900 °C for 2 h were pure BaTiO₃ phase partly consisted of the tetrahedron BaTiO₃. The powders were nanometer scale particles. After sintering, the ceramics mainly consisted of the tetrahedron BaTiO₃ phase. Compared with the powders prepared using hexanoic acid as surfactant, the particle size of the powders prepared using hexanedioic acid obviously increased, and as well as the grain size, the relative density and the whole permittivity of the ceramics increased. Furthermore, the forming process of the powders with better dispersibility and the influence of the carboxyl number on the particle size of the powders can be explained using the “organic acid micro-capsules” model. Relatively, the ceramic prepared using hexanedioic acid as the surfactant had higher relative density (96.6%), room temperature permittivity (3089) and lower dielectric loss (0.015).     

溶胶–凝胶法合成Nd:YAG粉体及透明陶瓷的制备

以Y2O3和硝酸盐为原料,柠檬酸为络合剂,采用溶胶–凝胶法合成了Nd0.03Y2.97Al5O12(Nd:YAG)干凝胶,经不同温度焙烧后制得前驱粉体,然后将粉体经1700℃真空烧结制备了Nd:YAG透明陶瓷。对柠檬酸的络合作用进行了探讨,对粉体及透明陶瓷的结构、形貌和光学性能进行了研究。结果表明:柠檬酸与硝酸盐发生络合反应形成有机网络结构,有效减轻了粉体颗粒间的团聚;950℃焙烧后得到纯相Nd:YAG粉体,颗粒细小并呈片状;Nd:YAG透明陶瓷致密度高(理论密度的95%),晶粒尺寸约为10μm,在1060nm处的透射率为63%。     

Bi掺杂BaTiO_3基PTC陶瓷的制备、微结构和电性能

采用液相掺杂及低温固相反应法制备了Bi掺杂BaTiO3纳米晶体,然后经烧结制得了Bi掺杂BaTiO3基PTC陶瓷。分析了所制Bi掺杂BaTiO3晶体的物相、晶粒大小及微结构,研究了烧结条件对所制PTC陶瓷电性能的影响。结果表明:Bi掺杂BaTiO3晶体在常温下为立方晶系,颗粒基本呈球形且大小均匀,粒径约为60 nm;在烧结温度为1 330℃、保温时间为20 min条件下所制PTC陶瓷性能最佳:室温电阻为26.29,升阻比为3.585×104。     

Preparation and characterization of Si-doped barium titanate nanopowders and ceramics

Si-doped barium titanate nanopowders and ceramics were prepared through the sol-gel process. The powders and ceramics were characterized by methods of XRD, SEM and TEM. The dielectric properties of the ceramics were also determined. The results indicated that the powders were nanopowders and they were all cubic BaTiO₃ phase with the concentration of Si ?5.0 mol%. When the concentration of Si increased to 10.0 mol%, another phase of Ba₂TiSi₂O₈ appeared. After sintering, the cubic BaTiO₃ phase was transformed into tetrahedron BaTiO₃ phase. Si doping with low concentration resulted in improving grain growth and reduced dielectric loss. As the sintering temperature increased, the dielectric properties of the ceramics decreased. BaTiO₃ ceramics doped with Si all had a small peak at room temperature in ε−T cures. Specially, the ceramic doped with 0.3 mol% Si had evident double peaks, the maximum room temperature permittivity (4081) and the minimum dielectric loss (0.004).     

Li_2ZnTi_3O_8微波介质陶瓷烧结工艺的研究

采用传统固相反应法制得Li2ZnTi3O8微波介质陶瓷,研究了主要烧结工艺参数对所制陶瓷的物相组成、显微组织及微波介电性能的影响。结果表明:经900℃预烧并在1 075℃保温4 h所得陶瓷试样只含有单一的Li2ZnTi3O8相;另外,其显微组织均匀,气孔等缺陷较少,相对密度达到98.5%,且具有良好的介电性能:εr=26.6,Q·f=75 563 GHz,τf=–12.4×10–6/℃。