数字集群技术发展政策研究

文章详细介绍了国内外数字集群发展及应用情况,论述了数字集群知识产权的重要性,指出中国集群通信技术GoTa、GT800的诞生为中国数字集群通信产业的发展奠定了坚实的基础.文章提出了一种中国共网数字集群通信产业发展的思路,认为应妥善处理好公网、共网、专网的关系,找准集群通信的市场定位,在此基础上积极培育集群通信市场.     

数字集群技术发展政策研究

文章详细介绍了国内外数字集群发展及应用情况，论述了数字集群知识产权的重要性，指出中国集群通信技术GoTa、GT800的诞生为中国数字集群通信产业的发展奠定了坚实的基础。文章提出了一种中国共网数字集群通信产业发展的思路，认为应妥善处理好公网、共网、专网的关系，找准集群通信的市场定位，在此基础上积极培育集群通信市场。     

数字集群通信产品的市场与应用

该文介绍了国内外数字集群通信的进展,并对国内市场作了预测和分析,指出数字集群通信的潜在市场不等于实在市场,还有一个培育市场的过程。为了促进数字集群通信的发展,文中较为详细地介绍了虚拟专用网功能、移动台直通功能以及多种类型的数据传输功能。因此,可以在许多领域开拓市场,使其获得广泛的应用。     

GOTa的技术创新对集群通信市场的影响

集群通信经历了从无线对讲系统、模拟集群专网、数字集群系统的发展历程,随着数字集群阶段各种先进成熟的技术陆续推出,集群通信市场从小规模专网向大规模专网与集群公网的方向演进。     

集群通信技术专题

在我国,随着社会经济的发展和公共安全的需求日益提高,对可用于广域调度指挥的集群通信网络的需求目益迫切,为我国发展集群通信系统提供了经济和市场基础。目前,国内的数字集群通信还属于新兴产业,尤其是缺乏民族产业化的基础。从发展现状来看,我国数字集群移动通信设备仍以引进为主,因此无论从市场发展前景的角度和市场发展机遇的角度来看,大力推进我国数字集群的民族产业化,提供更高性能价格比的数字集群系统,无论     

中国集群通信产业的发展

中兴通讯推出的基于CDMA技术的GoTa数字集群通信系统,是国际范围内首次由中国企业发布的具有自主知识产权的数字集群通信产品。与现有的集群行业标准iDEN和TETRA相比,GoTa数字集群通信系统具有系统稳定、实现方案简捷、投资少、部署方面、安全性高等优点。GoTa数字集群通信系统对于保护国家战略安全,迅速扩大国内集群通信市场规模,实现中国电信企业做大做强都有着特别重要的意义。为了让广大读者及业内人士对我国数字集群的发展现状及GoTa数字集群通信系统有一个全面深入的了解,我刊特推出“GoTa数字集群”专题,以飨读者。     

数字集群应受到更多重视中国铁通将成推广主力军——访中国铁通集团技术部副总经理蒋春生

"如果说公众移动通信是一个成品制衣厂的话,那么数字集群通信就是一个专业的裁缝铺,它能为用户提供量身定做的服务.近20年来,我国公众移动通信得到了突飞猛进的发展,相比之下,集群通信的发展比较缓慢,其原因既有技术方面的也有市场方面的.公众移动通信取代不了数字集群通信,数字集群通信应该受到社会各界更多的重视."中国铁通集团技术部副总经理蒋春生在接受记者采访时表示,"目前,我国开展集群共网业务的市场条件已经具备,国产数字集群技术和产品也基本成熟,并能够满足市场需要.中国铁通在集群共网运营的各方面已经做好了充分的准备,在未来将成为推动我国数字集群通信迅速发展的主力军."     

集群通信市场的划分及网络建设

文章简要介绍主流数字集群移动通信体制的主要特性,分析数字集群移动通信市场主要用户的构成,以及各类用户对调度指挥通信需求的特征,最后探讨运营各类数字集群通信网络应考虑的若干因素。     

定制化的专业通信将加速发展——访SELEX公司亚太区经理Attilio BASILE

集群通信数字化在中国已经推广多年,多种数字集群通信制式在中国市场均取得较大进展,其中,TETRA制式数字集群在网络、终端等相关厂商的推动     

EADS：集群通信市场迎来发展“拐点”

对于中国集群通信市场发展来说，2008年的奥运会无疑是一个分水岭，或者说是“里程碑”。自从2000年12月原信息产业部颁布了TETRA数字集群标准，到2008年整整8年的时间，是TETRA数字集群在中国发展非常重要的时段，它标志着我国的专业通信客户市场已经完全接受了TETRA数字集群技术。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.