Real-time 850 nm multimode VCSEL to 1 550 nm single mode VCSEL data routing for optical interconnects

Short-reach optical interconnects among massive serves in data centers have attracted extensive research recently. Increasing capacity, cost and power efficiency as well as wavelength switching between data center network nodes are still key challenges for current optical interconnects. In this work, we experimentally demonstrate the real-time inter-mode optical wavelength switching technique, for high-speed wavelength flexible data center interconnects. A 10 Gbit/s 1 550 nm single mode vertical cavity surface emitting laser (VCSEL) is optically injected and used to control a 10 Gbit/s multimode VCSEL carrier at 850 nm. Results show that a clearly open eye diagram is achieved at back-to-back analysis, implying a successful wavelength switch and error-free operation at 10 Gbit/s. A fully optical wavelength conversion of a multimode VCSEL operation at 850 nm using a single mode VCSEL subject to external optical injection at 1 550 nm is reported. This work opens new perspectives towards the development of a cost effective high-speed real-time inter-band wavelength switching technique between servers and network devices operating at different transmission windows at network nodes, for current and future optical interconnects.     

高功率窄谱宽1 915 nm掺铥光纤激光器研究

开展了1 915 nm高功率、高效率、窄谱宽输出的掺铥光纤激光器（TDFL）研究。基于全光纤主振荡功率放大（MOPA）结构,采用40 W的793 nm半导体激光器泵浦纤芯直径25 m的双包层大模场面积（LMA）掺铥光纤,获得了最高功率12.1 W的1 915 nm窄谱宽连续种子激光输出。将8 W种子光注入掺铥光纤放大器,在793 nm激光泵浦功率为142.9 W时,获得了平均功率90 W的激光输出,其中心波长为1 915.051 nm,3 dB谱宽仅为94 pm,斜率效率为60.2%,光-光转换效率达63.0%。该系统在40 min运行考核时间内输出激光稳定性良好。     

Transparent wavelength conversion in fibre with 24 nm pump tuningrange

A transparent continuous wave-pumped highly nonlinear fibre wavelength converter (WC) with a conversion bandwidth of 61 nm and a pump wavelength tuning range of 24 nm, the largest ever reported for fibre-based WCs, is demonstrated. The conversion quality is confirmed by bit error rate measurements showing < 1.4 dB power penalty at 10 Gbit/s data transmission     

160-Gb/s optical sampling by gain-transparent four-wave mixing in asemiconductor optical amplifier

We report on a broad-band all-optical switch that exhibits high linearity (>30 dB), high switching contrast (>25 dB), and large data wavelength tunability (100 nm). The switching principle is based on four-wave mixing. Two control pulse trains are placed in the gain wavelength region of a 1300-nm semiconductor-optical amplifier. The data signal, however, is at 1550 nm in the transparent wavelength region where four-wave mixing sidebands are generated due to index modulations. The switch is used to sample a 160-Gb/s data signal with a temporal resolution of approximately 1.7 ps     

Fast Wavelength Switching Lasers Using Two-Section Slotted Fabry&#8211;P&#201;rot Structures

Fast wavelength switching of a two-section slotted Fabry–PÉrot laser structure is presented. The slot design enables operation at five discrete wavelength channels spaced by 10 nm by tuning one section of the device. These wavelengths operate with sidemode suppression ratio in excess of 35 dB, and switching times between these channels of approximately 1 ns are demonstrated.     

Multichannel operation of an integrated acoustooptic wavelengthrouting switch for WDM systems

Polarization independent acousto-optic tunable filters (PIAOTF's) can operate as transparent wavelength-selective crossconnects to route signals in wavelength division multiplexed optical networks. In this paper, a new low power PIAOTF is characterized as a switch in multiwavelength operation, using four equally spaced lightwave signals with wavelengths between 1546 nm and 1558 nm. Interchannel interference due to sidelobe excitation is lower than -11 dB for single wavelength switching and is equal to -6 dB in the extreme case of simultaneous switching of all wavelength channels. Sources of interport and interchannel crosstalk for single and multiple wavelength switching are identified     

32 channel WDM multiplexer with 1 nm channel spacing and 0.7 nm bandwidth

A high density WDM multiplexer capable of combining 32 channels spaced 1 nm apart onto a monomode fibre is reported. The multiplexer incorporates a microlens array to give a channel bandwidth of 0.7 nm. The wavelength range of operation is 1.5285 mu m to 1.5595 mu m, within the erbium fibre amplification range. The mean insertion loss over the 32 channels is 6.7 dB and the polarisation sensitivity is less than 0.7 dB.<>     

Complementary optical bistable switching and triode operation using LiNbO3directional coupler

Optical bistable switching and optical triode operation have been carried out using an optical directional coupler switch fabricated by Ti diffusion into LiNbO3at the 1.15 μm wavelength. The on/off ratio in conventional bistable switching was 10 dB and that in complementary bistable switching was 13 dB. Amplification gain in triode operation controlled by laser diode was 4.8 dB. Complementary operation was found to reduce feedback gain and to improve the on/off ratio in optical bistable switching.     

Multimode interference photonic switches (MIPS)

The switching characteristics of multimode interference photonic switches (MIPS) are analyzed by wide-angle finite difference beam propagation method (FD-BPM). As a result, it is found that the MIPS with a multimode interference (MMI) length of 599 μm can switch the output light polarization insensitively with a crosstalk of less than -20 dB for a wavelength range of 70 nm. These analyses show that the MIPS can also have a 3-dB coupler function. Experimentally, an InGaAsP/InP 1×2 MIPS with a thicker InP cladding layer was fabricated and exhibited switching operation with crosstalks of -8 dB and -10 dB at 0 and 20 mA current injections, respectively. For a 2×2 MIPS with a thinner InP cladding layer, better switching characteristics with a crosstalk of -13 dB and an extinction ratio of 17 dB were realized     

一种基于130 nm CMOS工艺的K波段混频器

基于130 nm CMOS工艺,设计了工作于K波段的双平衡下变频混频器。在传统吉尔伯特单元基础上采用电流复用注入结构,减小了开关级的偏置电流,提升了开关性能。在开关级源端引入谐振电感,消除了开关共源节点处的寄生电容,抑制了射频信号的泄露,提高了增益,减小了噪声。仿真结果表明,输入射频信号为24 GHz,本振信号为24.5 GHz,本振输入功率为-3 dBm时,该混频器的转换增益为25.8 dB,单边带噪声系数为6.4 dB,输入3阶互调截点为-8.6 dBm。     

Gain flattened Er3+-doped tellurite fibre amplifier forWDM signals in the 1581-1616 nm wavelength region

A gain-flattened Er³⁺-doped tellurite fibre amplifier (EDTFA) with an expanded L-band is presented. The amplifier has an average gain of 28 dB and a noise figure of <6 dB with a slight gain excursion of 1 dB over a wide wavelength range of 1581-1616 nm. The total output power of the EDTFA module was 20.5 dBm and its power conversion efficiency reached 25%     

Silica-based 8×8 optical matrix switch integrating newswitching units with large fabrication tolerance

An 8×8 optical matrix switch consisting of asymmetric Mach-Zehnder (MZ) interferometer switching units with a waveguide intersection was fabricated using silica-based planar lightwave circuits (PLC's) on a silicon substrate. This switching unit can realize a high extinction ratio and a wide operation wavelength range even if the coupling ratios of the directional couplers (DC's) consisting the switching unit, deviate greatly from the ideal value of 50%. A matrix switch with a DC-coupling ratio of 30% was fabricated to test the validity of the proposed geometry. The average insertion loss was 7.3 dB in the transverse electric (TE) mode and 7.5 dB in the transverse magnetic (TM) mode. The average extinction ratio was 31.2 dB in the TE mode and 31.3 dB in the TM mode. The wavelength range with an extinction ratio greater than 20 dB was over 100 nm     

980nm半导体激光二极管的温度特性

测试并分析了980nm半导体激光二极管( SLD)模块的输出光功率、光谱和消光比与注入电流及温度的变化关系。结果反映:在测试范围内,温度不变时该模块的输出光功率随注入电流的增大而增加,经历了自发辐射和受激放大过程;电流不变时该输出光功率随管芯温度的变化基本保持稳定。温度不变的情况下,当注入电流小于阈值电流时,峰值波长、3dB带宽和消光比随注入电流的增大而较快增加,当注入电流大于阈值电流时,峰值波长、3dB带宽和消光比随注入电流的增大而缓慢增加;电流不变时峰值长、3dB带宽和消光比随温度升高而有所增大。     

Integrated acoustooptic tunable filters using weighted coupling

A detailed theory and experimental results are presented on weighted-coupling integrated acoustooptic tunable filters (IAOTF). A low-sidelobe-level single-stage IAOTF in which the weighted coupling was facilitated by focused surface acoustic waves along an interaction length of 6.0 mm has been realized on a Y-X LiNbO₃ substrate, 8 mm in length. The measured performances of this weighted-coupling IAOTF at the optical center wavelength of 1.31 μm include a peak mode conversion at the acoustic center frequency of 214.6 MHz, a wavelength tuning range of 110 nm, a -3 dB optical bandwidth of 4.1 nm, and a switching rise time of 0.965 μs. Sidelobe levels below -21.4 dB have been accomplished at the mode-conversion efficiency of 15 percent and an RF drive power of 160 mW     

1550 nm GaInNAsSb distributed feedback laser diodes on GaAs

Single mode laser diodes on GaAs substrates were developed using GalnNAsSb double quantum well active regions grown by molecular beam epitaxy. The distributed feedback devices were fabricated using a regrowth-free process in which lateral Cr gratings were deposited adjacent to a dry-etched narrow ridge waveguide. In continuous- wave (CW) operation the devices exhibit a lasing wavelength of 1550 nm at 10degC with a very high sidemode suppression ratio of > 50 dB throughout most of the operational range, and output power up to 15 mW.     

Polarization-Insensitive GaInNAs–GaInAs MQW-SOA With Low Noise Figure and Small Gain Tilt Over 90-nm Bandwidth (1510–1600 nm)

rdquoWe developed a broadband polarization-insensitive multiquantum-well (MQW) semiconductor optical amplifier (SOA) for application as an optical switch in broadcast-and-select-type optical packet switching systems. We adopted a GalnNAs-GalnAs MQW structure active layer to decrease the noise figure (NF) around the gain peak wavelength together with a small gain tilt in the C-band. The device exhibited a smaller NF on the shorter wavelength side of the gain peak compared with a GalnNAs strained-bulk SOA. The reduced NF resulted in a large effective gain bandwidth of up to 90 nm (1510-1600 nm). The device also exhibited the small gain tilt (<1.2 dB) and small polarization-dependent gain (<0.8 dB) in the C-band.     

Wavelength add-drop switching using tilting micromirrors

This paper describes a single-mode optical fiber switch which routes individual signals into and out of a wavelength multiplexed data stream without interrupting the remaining channels. The switch uses free-space optical wavelength multiplexing and a column of micromechanical tilt-mirrors to switch 16 channels at 200 GHz spacing from 1531 to 1556 nm. The electrostatically actuated tilt mirrors use an 80 V peak-to-peak 300 KHz sinusoidal drive signal to switch between ±10° with a 20 μs response. The total fiber-to-fiber insertion loss for the packaged switch is 5 dB for the passed signals and 8 dB for added and dropped signals, with 0.2 dB polarization dependence. Switching contrast was 30 dB or more for all 16 channels and all input and output states. We demonstrate operation by switching 622 Mb/s data on eight wavelength channels between the two input and output ports with negligible eye closure     

基于单模光纤的可调谐声光滤波器

从模式转换效率、带宽和波长调谐范围等角度分析了普通单模光纤中声光模式转换的性质 ,并在实验上实现了插入损耗小于 0 1dB ,带宽小于 1nm ,调谐范围大于 30nm的光纤声光滤波器。     

10-Gb/s agile wavelength conversion with nanosecond tuning timesusing a multisection widely tunable laser

Simultaneous wavelength conversion and high-speed wavelength switching has been demonstrated using a multisection grating-assisted coupler sampled reflector laser. A high-output extinction ratio (>20 dBm) over a 30-nm wavelength range was observed. The 10-Gb/s data was switched between different output wavelengths at a 2.5-Gb/s rate and transmitted over 50 km of dispersion-shifted fiber with a small measured power penalty (<2 dB)     

An InGaAs/GaAs MQW optical switch based on field-induced waveguides

A novel optical waveguide switch containing InGaAs/GaAs multiple-quantum wells (MQW) is proposed. In this structure, a large field-induced refractive index increase (0.1%) due to the quantum-confined Stark effect (QCSE) is utilized to generate electrically controllable waveguides. Switching operation of a first fabricated device has been investigated at wavelengths of about 1 μm. A crosstalk ratio of -18.8 dB and an extinction ratio of 20.9 dB was achieved at a reverse voltage of -7 V. Within an operational wavelength region of 9 nm, crosstalk was found to be less than -13 dB for both switching conditions. Further, the proposed switch structure seems to be well suited for monolithic integration with laser diodes and exhibits the potential for high-speed operation