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基于表面氢化处理的金刚石材料,利用自对准栅工艺技术研制了p型金刚石肖特基栅场效应晶体管(MESFET)。利用AFM和Raman测试方法对材料的特性进行了测试及分析。同时,对研制的金刚石MESFET器件进行了TLM以及直流特性测试及性能分析。利用TLM方法测试获得的表面氢化处理金刚石材料的方阻和Au欧姆接触比接触电阻率分别为4kΩ/□和5.24×10-4Ω.cm2。研制的1μm栅长金刚石MESFET器件的最大电流在-5V偏压下达到10mA/mm以上。 相似文献
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运用双指数函数模型方法分析了影响 MESFET的 Ti Pt Au-Ga As肖特基势垒结特性的各种因素及各因素间的关系 ,编制了 MESFET肖特基势垒结结参数提取和 I-V曲线拟合软件 ,实现了通过栅源正向 I-V实验数据提取反映肖特基势垒结特性的六个结参数和得到相应结参数下的理论数据 ,与实验数据吻合良好。分析了影响肖特基势垒结 I-V曲线分布的因素 ,提出了进行器件特性、参数稳定性与可靠性研究和定量分析 MESFET肖特基势垒结质量的新方法 相似文献
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业已证明:在光照下,GaAs MESFET在18MΩ·cm的水中漂洗会导致器件直流特性的迅速退化。水在肖特基势垒栅电极的周围腐蚀出一个槽,其腐蚀速率至少为22 /min。槽的形成明显地增加了MESFET的寄生电阻。 相似文献
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本文研究了4H-SiC MESFET与Ni,Ti/4H-SiC SBD的中子辐照效应,中子归一化能量为1MeV,最高中子注量和gamma射线累积总剂量分别为1×1015n/cm2和3.3Mrad(Si)。经过1×1013n/cm2的辐照剂量后, SiC MESFET的电学特性仅有轻微的变化,Ni、Ti/4H-SiC以及SiC MESFET栅极肖特基接触的 都没有明显变化;随着辐照中子注量的进一步上升,SiC MESFET的漏极电流下降,夹断电压上升。辐照剂量达到1×1014n/cm2,夹断电压从辐照前的-12.5V上升为约-11.5V。当中子辐照注量达到2.5×1014n/cm2时,SiC MESFET栅极肖特基接触的 比辐照前有一定的下降。分析认为SiC MESFET和SBD的退化主要是由中子辐照引入的体材料损伤造成的。本文的研究表明,提高器件有源区的掺杂浓度可以提高中子辐照容限。 相似文献
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4H-SiC metal Schottky field effect transistors (MESFETs) and Schottky barrier diodes (SBDs) were irra-diated at room temperature with 1 MeV neutrons. The highest neutron flux and gamma-ray total dose were 1×1015n/cm2 and 3.3 Mrad(Si), respectively. After a neutron flux of 1×1013 n/cm2, the current characteristics of the MES-FET had only slightly changed, and the Schottky contacts of the gate contacts and the Ni, Ti/4H-SiC SBDs showed no obvious degradation. To further increase the neutron flux, the drain current of the SiC MESFET decreased and the threshold voltage increased. φB of the Schottky gate contact decreased when the neutron flux was more than or equal to 2.5×1014n/cm2. SiC Schottky interface damage and radiation defects in the bulk material are mainly mechanisms for performance degradation of the experiment devices, and a high doping concentration of the active region will improve the neutron radiation tolerance. 相似文献
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《Electron Device Letters, IEEE》1982,3(5):109-111
A new Al0.3 Ga0.7 As/GaAs modulation-doped FET fabricated like a MESFET but operating like a JFET was successfully fabricated and tested. This new device replaces the Schottky gate of the MESFET with an n+/p+ camel diode structure, thereby allowing problems associated with the former to be overcome. The devices, which were fabricated from structures grown by molecular beam epitaxy (MBE), had a 1µm gate length, a 290µm gate width, and a 4µm channel length. The room temperature transconductance normalized to the gate width was about 95 mS/mm, which is comparable to that obtained in similar modulation-doped Schottky barrier FET's. Unlike modulation-doped Schottky barrier FET's, fabrication of this new device does not require any critical etching steps or formation of a rectifying metal contact to the rapidly oxidizing Al0.3 Ga0.7 As. Relatively simple fabrication procedures combined with good device performance make this camel gate FET suitable for LSI applications. 相似文献
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Robertson J. Ytterdal T. Peatman W.C.B. Tsai R.S. Brown E.R. Shur M. 《Electron Devices, IEEE Transactions on》1997,44(7):1033-1039
We describe compact and highly functional logic elements utilizing a two-dimensional (2-D) MESFET with a resonant tunneling diode load. The 2-D MESFET uses two lateral Schottky gate contacts to modulate the width of the 2-D electron gas layer. The novel contact geometry results in reduced gate capacitance, ultra-low-power performance, and the elimination of the Narrow Channel Effect (NCE) compared to conventional HFETs or MESFETs. The advantage of using an RTD as the load device is the reduction of the static power consumption at the logical high input level. We demonstrate low-power RTD/2-D MESFET inverter operation as well as compact NAND and NOR gates using a single RTD/2-D MESFET pair. We also present optimized inverter elements and estimate from SPICE simulations the power-delay products of RTD/2-D MESFET ring oscillators. Compared to recently reported values for CMOS on SOI, the RTD/2-D MESFET technology is expected to exhibit one order of magnitude less active power dissipation and a factor of 3 lower power-delay product 相似文献
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《Electron Device Letters, IEEE》1983,4(11):409-411
An improved enhancement-mode GaAs MESFET was fabricated by a high dose Si ion implantation which was used to reduce the source and drain parasitic resistances, and by a Pt buried gate which was used to control the threshold voltage and reduce the interface states of the Schottky gate. 250 mS/mm transconductance has been obtained for 1-µm gate-length enhancement-mode GaAs MESFET. 相似文献
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用电子束蒸发LaB_6单晶的方法,制备了LaB_6/GsAs肖特基势垒,经800℃高温退火后,势垒高度为0.70eV,理想因子为1.15~1.2。用俄歇能谱观察到LaB_6/GaAs界面有良好的热稳定性,以LaB_6为栅得到了初步的全离子注入的MESFET特性。结果表明,LaB_6有希望用于GaAs集成电路。 相似文献
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The design and fabrication of an InP MESFET with excellent I -V characteristics are reported. A record high transconductance of 110 mS/mm was measured for a 1-μm gate length direct-Schottky-contact InP MESFET, where the InP surface was not passivated or treated prior to the deposition of the gate contact. Microwave measurements show an f max of 11.6 GHz for this typical nominal 1-μm gate length device. A p-type planar doped layer was inserted between the buried n-type channel and the device surface at 18 nm from the gate metal. This planar layer enhances the Schottky barrier height and device performance 相似文献
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The fabrication of the first MESFET structures on Hg/sub 1-x/Cd/sub x/Te is reported using MOCVD grown layers on GaAs substrates. The 6 mu m gate devices exhibited a room temperature transconductance of 1.0 mS/mm and pinch off voltage of -4.0 V. The Schottky barrier characteristics of the devices were critically dependent on the stoichiometric x ratio of the Hg/sub 1-x/Cd/sub x/Te with diode formation evident only at x >0.5.<> 相似文献
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Wang G.W. Feng M. Kaliski R. Liaw Y.P. Lau C. Ito C. 《Electron Device Letters, IEEE》1989,10(10):449-451
The authors present the fabrication and characterization of ion-implanted graded InxGa1-xAs/GaAs MESFETs. The InxGa1-xAs layers are grown on GaAs substrates by MOCVD (metal-organic chemical vapor deposition) with InAs concentration graded from 15% at the substrate to 0% at the surface. 0.5-μm gate MESFETs are fabricated on these wafers using silicon ion implantation. In addition to improved Schottky contact, the graded InxGa 1-xAs MESFET achieves maximum extrinsic transconductance of 460 mS/mm and a current-gain cutoff frequency f t of 61 GHz, which is the highest ever reported for a 0.5-μm gate MESFET. In comparison, In0.1Ga0.9As MESFETs fabricated with the same processing technique show an f t of 55 GHz 相似文献
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Henry H.G. Augustine G. DeSalvo G.C. Brooks R.C. Barron R.R. Oliver J.D. Jr. Morse A.W. Veasel B.W. Esker P.M. Clarke R.C. 《Electron Devices, IEEE Transactions on》2004,51(6):839-845
Previous efforts have revealed instabilities in standard SiC MESFET device electrical characteristics, which have been attributed to charged surface states. This work describes the use of an undoped "spacer" layer on top of a SiC MESFET to form a "buried-channel" structure where the active current carrying channel is removed from the surface. By using this approach, the induced surface traps are physically removed from the channel region, such that the depletion depth caused by the unneutralized surface states cannot reach the conductive channel. This results in minimal RF dispersion ("gate lag") and, thus, improved RF performance. Furthermore, the buried-channel approach provides for a relatively broad and uniform transconductance (G/sub m/) with gate bias (V/sub gs/), resulting in higher efficiency MESFETs with improved linearity and lower signal distortion. SiC MESFETs having 4.8-mm gate periphery were fabricated using this buried-channel structure and were measured to have an output power of 21 W (P/sub out//spl sim/4.4 W/mm), 62% power added efficiency, and 10.6 dB power gain at 3 GHz under pulse operation. When operated at continuous wave, similar 4.8-mm gate periphery SiC MESFETs produced 9.2 W output power (P/sub out//spl sim/2 W/mm), 40% PAE, and /spl sim/7 dB associated gain at 3 GHz. 相似文献
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We report the fabrication and characterization of a depletion-mode n-channel ZnS0.07Se0.93 metal-semiconductor field effect transistor (MESFET). A ZnSSe FET could be a key element in opto-electronic integration consisting of light emitters, light receivers and MESFET pre-amplifiers. Mesa isolation, recess etching and self-alignment techniques were adopted to optimize the MESFET performance. Source and drain (S/D) ohmic contacts and gate Schottky contact were formed by Cr/In/Cr and Au deposition, respectively. Depletion mode FET's with varying gate width-to-length ratio of W/L=200 μm/20 μm, 200 μm/4 μm and 200 μm/2 μm were fabricated. A 2 μm FET was characterized as follows: the turn-on voltage, Von≈1.75 V, the pinch-off voltage, Vp≈-13 V, the unit transconductance, gm≈8.73 mS/mm, and the breakdown voltage with zero gate-source bias, BV≈28 V 相似文献