红外无偏振效应分光棱镜的理论分析与设计

当光线倾斜入射时,膜层不可避免地会产生偏振效应.在很多的实际应用中,这种偏振效应是有害的.文中回顾了消偏振设计的研究历程,讨论了各自方法的特点.表明已见报道的消除分光棱镜偏振效应的方法不多,而且大多限于可见光波段.文中提出用于红外波段的无偏振效应分光棱镜的设计方法及其理论分析,针对不同型号玻璃基底分别给出了相应的红外无偏振效应分光棱镜膜系的具体设计,计算了红外消偏振膜系的反射率与反射相移,提供了其计算机仿真结果,结果表明设计方案合理可行.     

光学相干断层扫描成像系统中消偏振分光膜的研制

消偏振分束镜能够将光学相干断层扫描干涉成像系统中的信号光进行分束,是光学相干断层扫描成像系统中重要的组成器件。为了减小45度角入射时P光和S光造成的偏振分离,针对成像系统中分光棱镜的参数要求,选择Ti3O5、Al2O3和Mg F2薄膜材料,借助Macleod膜系设计软件,结合Compact Design功能,运用Optimac和Needle Synthesis两种优化方法进行优化设计,选择电子束加热蒸发和离子源辅助沉积的方式镀制薄膜。根据实际镀膜结果,运用Independent Sensitivity功能对膜层敏感度进行分析,并采用Reverse Engineering模块进行逆向模拟分析,判断镀膜误差主要来源于不同监控波长的光控tooling值有细微的差距以及膜层的Final Swing值过大。通过改变不同监控波长的光控tooling值以及对敏感度较高的膜层进行重点监控,制备的消偏振分光膜经过测试,1310±50nm处P光平均透射比为51.47%,S光平均透射比为49.11%,偏振度为4.59%,满足成像系统的使用要求,并通过了环境测试。     

PECVD工艺参数对SiO_2薄膜光学性能的影响

为探索利用等离子体增强化学气相沉积(Plasma Enhanced Chemical Vapor Depo-sition,PECVD)技术制作光学薄膜的有效方法.以SiH4和N2O作为反应气体,通过采用M-2000UI型宽光谱变角度椭圆偏振仪对制作样片进行测试,分析了薄膜沉积过程中的不同的工艺参数对SiO2薄膜光学性能的影响.实验结果表明:在PECVD技术工作参数范围内,基底温度为350℃,射频功率为150 W,反应气压为100 Pa时,能够沉积消光系数小于10-5,沉积速率为(15±1)nm/min,折射率为(1.465±0.5)×10-4的SiO2薄膜.     

InSb薄膜的真空蒸发及磁敏霍尔元件的制作

利用单源真空蒸发方法制备InSb薄膜。研究了基片温度控制和膜层厚度对薄膜电子迁移率的影响。室温下测得InSb薄膜的电子迁移率为4×104cm2/V.s,晶粒尺寸达微米数量级。制作的磁敏霍尔元件输入与输出电阻范围为200~500Ω,乘积灵敏度达90~150V/A·T。     

Preparation and characterization of nanocrystalline SnO2 thin film by electrodeposition technique

A novel process for preparing tin oxide thin films directly on copper foil by electrodeposition was developed. An optimal preparation technology to obtain SnO2 thin films was proposed with current density of 8 mA/cm2, the time of deposition of 120 min, the concentration of tin dichloride of 0.02 mol/L and the concentration of dissociated acid of 0.03 mol/L. The phase identification, microstructure and morphology of the thin films were investigated by thermogravimetric analysis and differential thermal analysis, X-ray diffraction, Fourier transform infrared spectra,scanning electron microscopy and transmission electron microscopy. The as-deposited thin film was composed of SnO2·xH2O was obtained by drying at room temperature. Nanocrystalline SnO2 thin film having tetragonal structure with average grain size in the range of 8 to 20 nm and porous, uniform surface was obtained by heat-treating the as-deposited film at 400 ℃ for 2 h. Electrochemical characterization shows that SnO2 film can deliver a discharge capacity of 798 mAh/g and the SnO2 film with smooth surface and annealed at 400 ℃ for 2 h has better cycle performance than that with rough surface and annealed at 150 ℃ for 10 h.     

Optical Properties and Microstructure of Ta2O5 Thin Films Prepared by Ion Assisted Electron Beam Evaporation

An effective method for determining the refractive index of weak absorption transparent thin films was presented, which is also applicable to other weak absorption dielectric thin films.The as-deposited Ta2O5 thin films prepared by ion assisted electron beam evaporation showed a maxima transmittance as high as 93% which was close to that of the bare substrate, and exhibited a blue shift when the substrate temperature increased from room temperature to 250 ℃. The refractive index seemed to be immune to the substrate temperature and film thickness with its value about 2.14 at incidence wavelength of 550 nm. The surface morphology measured by atomic force microscopy (AFM) revealed that the microstructures lead to the slim optical difference, which was the interplay of substrate temperature and assisted ion beam.     

溶胶-凝胶模板法制备有序多孔二氧化铈薄膜

采用乳液共聚法制备了聚苯乙烯-丙烯酸羟乙酯[P(St-HEA)]微球,通过流延成膜法制备了P(St-HEA)薄膜,再利用溶胶-凝胶模板法煅烧得到有序多孔二氧化铈(CeO2)薄膜.采用红外光谱、扫描电镜以及X射线衍射分析对P(St-HEA)微球单分散性及有序多孔CeO2薄膜表面形貌和结构进行了表征.结果表明,当丙烯酸羟乙酯(HEA)用量占总单体的用量低于10%(质量分数)时,制备的P(St-HEA)微球单分散性和表面较好.通过P(St-HEA)的胶体晶体模板制备了有序多孔CeO2薄膜,所得孔径约为190 nm,X-射线衍射分析显示有序多孔CeO2薄膜是立方萤石结构.     

氧化铝缓冲层对ZnO薄膜性质的影响

采用反应磁控溅射的方法在石英衬底上制备了一层AI2O3薄膜,并将其作为后续ZnO薄膜生长的缓冲层.然后,采用反应磁控溅射的方法在AI2O3缓冲层上制备了ZnO薄膜.对比研究了引入Al2O3缓冲层前后,ZnO薄膜的结构和光学特性.通过引入Al2O3缓冲层,发现ZnO薄膜样品的(002)方向X射线衍射峰的半峰宽(FWHM)明显减小,光致发光谱中与缺陷相关的可见发光峰强度明显减弱,吸收光谱中的吸收边变得更加陡峭.这些结果表明引入Al2Q3缓冲层后,ZnO薄膜的结构和光学特性得到了很大改善,为制备高质量ZnO薄膜提供了参考.     

Optical properties and microstructure of Ta<Subscript>2</Subscript>O<Subscript>5</Subscript> thin films prepared by ion assisted electron beam evaporation

An effective method for determining the refractive index of weak absorption transparent thin films was presented, which is also applicable to other weak absorption dielectric thin films. The as-deposited Ta2O5 thin films prepared by ion assisted electron beam evaporation showed a maxima transmittance as high as 93% which was close to that of the bare substrate, and exhibited a blue shift when the substrate temperature increased from room temperature to 250 ℃. The refractive index seemed to be immune to the substrate temperature and film thickness with its value about 2.14 at incidence wavelength of 55（1 nm. The surface morphology measured by atomic force microscopy （AFM） revealed that the microstructures lead to the slim optical difference, which was the interplay of substrate temperature and assisted ion beam.     

Infrared thermochromic properties of VO2 thin films prepared through aqueous sol-gel process

The stoichiometric vanadium(IV) oxide thin films were obtained by controlling the temperature, time and pressure of annealing. The thermochromic phase transition and the IR thermochromic property of 400 nm and 900 nm VO2 thin films in the 7.5 μm-14 μm region were discussed. The derived VO2 thin film samples were characterized by Raman, XRD, XPS, AFM, SEM, and DSC. The resistance and infrared emissivity of VO2 thin films under different temperature were measured, and the thermal images of films were obtained using infrared imager. The results show that the VO2 thin film annealed at 550 ℃ for 10 hours through aqueous sol-gel process is pure and uniform. The 900 nm VO2 thin film exhibits better IR thermochromic property than the 400 nm VO2 thin film. The resistance of 900 nm VO2 film can change by 4 orders of magnitude and the emissivity can change by 0.6 during the phase transition, suggesting the outstanding IR thermochromic property. The derived VO2 thin film can control its infrared radiation intensity and lower its apparent temperature actively when the real temperature increases, which may be applied in the field of energy saving, thermal control and camouflage.     

TiO_2薄膜表面粗糙度对光学特性的影响

薄膜表面粗糙度是影响薄膜光学性能的一个重要指标,采用Taylor Hobson表面轮廓仪对离子束辅助电子束热蒸发沉积的二氧化钛(TiO2)薄膜表面粗糙度进行了研究.采用椭偏仪通过选择不同的结构模型研究了不同基底粗糙度上沉积的TiO2薄膜的折射率和消光系数.研究结果表明:0.3 nm/s的沉积速率获得的TiO2薄膜表面粗糙度较小;在基底粗糙度较小时,TiO2薄膜具有一定的平滑作用.通过减小基底的粗糙度和考虑混合模型,TiO2薄膜特性有一定的提升,随着薄膜表面粗糙度的增加其折射率趋于2.08,消光系数趋于0.04.     

Preparation and Properties of Ag-TiO_2 Thin Films on Glass Substrates

1　ＩｎｔｒｏｄｕｃｔｉｏｎＩｎ 1970ｓ ,ｔｈｅｐｈｏｔｏｃａｔａｌｙｔｉｃｐｒｏｐｅｒｔｙｏｆｔｉｔａｎｉｕｍｄｉｏｘｉｄｅ (ＴｉＯ2 )ｗａｓｆｏｕｎｄｂｙＦｕｊｉｓｈｉｍａｅｔａｌ[1] .ＴｉＯ2 ｉｓｗｈｉｔｅｉｎｃｏｌｏｒ,ｉｎｅｘｐｅｎｓｉｖｅ ,ａｎｄｎｏｎｔｏｘｉｃ .Ｂｅｃａｕｓｅｏｆｉｔｓｓｔｒｏｎｇｐｈｏｔｏｃａｔａｌｙｔｉｃｅｆｆｅｃｔ ,ＴｉＯ2 ｉｓｕｓｅｄｉｎｔｈｅｔｒｅａｔｍｅｎｔｏｆｗａｓｔｅｗａｔｅｒａｎｄｔｈｅｐｕｒｉｆｉｃａｔｉｏｎｏｆａｉｒａｓａｎａｎｔｉｂａｃｔｅｒｉａ…     

Bactericidal and Photocatalytie Activity of Fe^3＋-TiO2 Thin Films Prepared by the Sol-gel Method

Pure TiO2 thin films and iron doped TiO2 thin films on glass substrate were prepared by sol-gel method, and characterized by X-ray diffractometer （XRD）, thermo-gravimetric analysis （TG-DSC）, high resolution transmission electron microscope （HRTEM）, scanning electron microscope （SEM） and UV-Vis spectroscopy, respectively. The experimental results show that the pure TiO2 thin films and iron doped TiO2 thin films can destroy most of the escherichia coli and bacillus subtillis under the irradiation of 365 nm UV-light. However, the iron doped TiO2 thin film is a better photocatalyst than pure TiO2 thin film. The ultrastructural studies provide direct evidences for understanding the bactericidal mechanism of the TiO2 photocatalyst.     

化学沉积AgOx薄膜的透光性能

采用化学沉积法在银一三乙醇胺(TEA)溶液中制备了AgOx薄膜并研究了薄膜的紫外可见光透过性能.实验结果表明,沉积温度越低、沉积时间越短薄膜的厚度越小.AgOx薄膜成份是由Ag、Ag2O和AgO组成的混合相,且薄膜中AgO含量随着第二次TEA与第一次TEA添加量的比值变化而变化.AgO含量越高、薄膜厚度越小,薄膜在紫外、可见光波段的透过率越大.薄膜在300 nm左右出现紫外透过峰,且随着AgO含量增加,峰强度增加,峰位置发生红移;在980 nm附近出现明显的透过峰,峰强随AsO含量增加而增大,最大透过率达到70%.     

射频磁控溅射制备的CdSe薄膜的光电学性质

采用射频磁控溅射技术在不同溅射功率下制备了CdSe薄膜,并利用X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)、能量色散X射线光谱仪(EDAX)、紫外可见近红外(UV-VIS-NIR)分光光度计和霍尔效应测试仪研究了溅射功率对薄膜的结构和光电学性质的影响.研究表明：增加溅射功率有利于增强薄膜的结晶性能;随着溅射功率的增加,薄膜的光学带隙和电阻率逐渐减小,载流子浓度逐渐增加,即薄膜的光电性能不断增强.该研究结果可为CdSe薄膜在光电器件方面的应用提供参考.     

衬底效应对LiTaO3薄膜制备的影响

用溶胶凝胶法在N型硅、P型硅、石英、铂、镍衬底上制备了钽酸锂(LiTaO3)薄膜,用XRD和SEM对钽酸锂薄膜性能参数进行了表征;发现掺杂少量环氧树脂能提高钽酸锂薄膜的均匀性,改善薄膜与衬底的粘附性;研究了衬底效应与薄膜厚度的关系,薄膜厚度超过0.2 μm,Ni衬底的XRD峰值强度几乎不再出现,说明衬底对薄膜初始结晶取向有重要影响;利用不同衬底上生长钽酸锂薄膜,XRD研究结果表明:N型硅、P型硅、石英衬底上只能制备多晶钽酸锂薄膜,铂衬底上制备的钽酸锂薄膜在(012)晶向有强大的择优取向性,镍衬底上制备的钽酸锂薄膜有更好的C轴择优取向性,C轴择优取向系数可达0.082。     

溶胶-凝胶法制备（Nd,Bi）_4Ti_3O_（12）铁电薄膜

采用溶胶-凝胶法在Pt/Ti/SiO2/Si基片上制备了（Nd,Bi）4Ti3O12薄膜。将薄膜于空气中分别进行每1层、每2层、每3层500℃预退火10 min,最后于氮气氛中680℃退火30 min。结果表明：预退火工艺对薄膜的结构和铁电性能都有影响：每一层预退火处理的薄膜具有较大的剩余极化值和最小的矫顽场（2Pr=47.8μC/cm2,2Ec=254 kV/cm）。所有薄膜都呈现良好的抗疲劳特性。     

Preparation of TiO_2 Thin Film and Its Antibacterial Activity

1　IntroductionInrecentyears ,theuseofinorganicantimicrobialagentshasattractedinterestforthecontrolofmicrobes[1-3 ] .Thekeyadvantagesofinorganicantimicro bialagentsareimprovedsafetyandstability ,ascomparedwithorganicantimicrobialagents .Atpresent,mostanti…     

氧化钒薄膜的制备方法及结构性能

氧化钒薄膜在非制冷红外成像器件中的应用已成为国际上研究的热点,各种晶体结构的氧化钒性能差异很大,为此综述了不同氧化钒晶体的结构和性能。由于制备方法及工艺条件对薄膜材料有较大影响,在此介绍了二氧化钒和五氧化二钒薄膜的几种主要制备方法及对生成膜性能的影响。     

Fiber Optic Humidity Sensor Based on Self-Assembled Polyelectrolyte

Polyelectrolyte multilayers were self-assembled onto planar glasssubstrates and multimode optic fibers. The multilayer thin films deposited on glass substrates were characterized by using UV-vis spectroscopy and X-ray photoelectron spectroscopy. The multilayer thin films containing hydrophilic side-groups possessed are affinity for water molecules. The adsorption and desorption of free water vapor gave rise to the changes in the refractive index and in the reflectance of the thin films. A multilayer thin film based fiber optic humidity sensor with an LED light source of 0.85 μm was designed. Under certain conditions, the reflected light intensity of the thin film sensor was a function of the humidity of air. About 30 bilayers was optimal for the multilayer thin film sensor working at wavelength of 0.85 μm. This sensor can work over almost the whole relative humidity range with very good sensitivity.