放电等离子超快速烧结 SiC-Al2O3纳米复相陶瓷

本文介绍用非均相沉淀法制备的纳米SiC-Al2O3复合粉体经放电等离子超快速烧结得到晶内型的纳米复相陶瓷,超快速烧结的升温速率为600℃/min,在烧结温度不保温,迅即在3min内冷却至600℃以下.与热压烧结相比,可降低烧结温度200℃以上.力学性能研究结果表明,在1450℃超快速烧结得到的纳米复相陶瓷的抗弯强度高达1000MPa,维氏硬度为 19GPa,断裂韧性也比Al2O3有所提高.TEM像显示纳米SiC颗粒大多分布在Al2O3母体晶粒内,而断裂表面的SEM像表明,穿晶断裂是其主要的断裂模式,这是所制备的纳米复相陶瓷力学性能大幅提高的主要原因.     

SiC-ZrO2(3Y)-Al2O3纳米复相陶瓷的力学性能和显微结构

本文介绍用非均相沉淀方法制备的纳米SiC-ZrO2(3Y)-Al2O3复合粉体经放电等离子超快速烧结得到晶内型的纳米复相陶瓷,超快速烧结的升温速率为600℃/min,在烧结温度不保温,迅即在3 min内冷却至600°C以下. 力学性能研究结果表明,在1450℃超快速烧结得到的纳米复相陶瓷的抗弯强度高达1200MPa,断裂韧性K1c为5 MPa1/2. TEM像显示纳米SiC颗粒大多分布在Al2O3母体晶粒内,也有一些纳米SiC颗粒分布在ZrO2晶粒内. 断裂表面的SEM像表明,穿晶断裂是其主要的断裂模式,这是所制备的纳米复相陶瓷力学性能大幅提高的主要原因.     

烧结温度对20%ZrO_2(3Y)/Al_2O_3复相陶瓷力学性能和微观结构的影响

20%纳米ZrO2(3Y)粉末加入到高纯亚微米Al2O3粉中,采用高压干压成型方法和恒速升温多阶段短保温烧结方法制备出不同烧结温度下的复相陶瓷。研究烧结温度对复相陶瓷力学性能的影响,通过XRD,EDS和SEM对复相陶瓷进行元素组成和微观结构分析。结果表明:烧结温度在很大程度上影响着复相陶瓷的力学性能和微观结构,常压烧结1600℃保温8h时,相对密度、维氏硬度和断裂韧性达到最大,分别为98.6%,18.54GPa和9.3MPa·m1/2,而基体晶粒尺寸为1.4~8.1μm,ZrO2相变量为34.6%。1600℃下复相陶瓷具有优质的微观结构,断裂方式为沿晶-穿晶混合断裂模式。ZrO2(3Y)粉体的加入,从相变增韧、内晶型颗粒增韧和裂纹偏转等多个方面提高了复相陶瓷的断裂韧性。     

亚微米ZrO_2粉体对氧化铝陶瓷力学性能的影响

在高纯Al2O3粉体中添加质量分数为16%的亚微米ZrO2粉体,制备Al2O3-ZrO2复合粉体,通过X射线衍射仪、电子探针和扫描电子显微镜分别对样品的相组成和显微结构进行分析,研究不同烧结温度下亚微米ZrO2粉体对氧化铝陶瓷抗折强度和硬度的影响。结果表明,在1 450℃时无压烧结2 h,Al2O3-ZrO2复相陶瓷的晶粒粒径约为0.5μm,抗弯强度高达797 MPa,提高了46%,维氏硬度为17.9 GPa。     

微波烧结Al2O3/SiC纳米复合陶瓷的研究

以分析纯Al(NO3)3.9H2O·NH3.H2O和50 nm的SiC粉体为原料,采用溶胶-凝胶法制备干凝胶,经热处理合成Al2O3/SiC纳米复合粉体。利用微波烧结制备Al2O3/SiC纳米复合陶瓷,并与常规烧结比较,分析了两种烧结方法对制备试样的力学性能影响。结果表明,与常规烧结相比,微波烧结可以提高Al2O3/SiC纳米复合陶瓷的强度和韧性,改善材料的显微结构,促进致密化和晶粒生长。     

Y2O3和纳米AlN协同作用对氮化铝陶瓷烧结性能及热传导的影响

在微米氮化铝粉体中添加含量为4%的Y2O3和不同含量的纳米AlN粉体制备氮化铝陶瓷,研究了Y2O3和纳米AlN协同作用对微米氮化铝陶瓷烧结性能和热传导性能的影响。结果表明,Y2O3优先与纳米AlN粉体表面的Al2O3反应生成活性较高的第二相Al5Y3O12,相比于Y2O3与微米AlN粉体表面Al2O3反应生成的Al5Y3O12,具有更低的熔化温度及更好的流动性;同时,纳米AlN粉体的高比表面能也促进氮化铝陶瓷的致密化进程。二者的协同作用有效地促进氮化铝陶瓷的致密烧结,改善第二相的微观分布,从而能在较低的烧结温度下获得具有较高热导率的氮化铝陶瓷。当Y2O3和纳米AlN粉体的添加量(质量分数)分别为4%和1.5%时,在1800℃烧结得到的氮化铝陶瓷密度为3.26 g·cm-3,第二相以连续相的形式分布于氮化铝晶界处,热导率为151.75 W/(m.K)。     

纳米ZrO2与微米Al2O3复合陶瓷的断裂模式

研究了两种微米Al2O3与纳米ZrO2复合陶瓷的裂纹扩展过程与显微结构的关系.结果表明,Al2O3晶粒内部形成纳米级或亚微米级ZrO2颗粒,是复合陶瓷的断裂模式从沿晶断裂向穿晶断裂转化的主因.ZrO2含量较低有利于Al2O3晶界迁移包裹纳米ZrO2形成内晶结构;而ZrO2含量较高使主晶相长大受到抑止,不利于形成内晶结构,趋向于沿晶断裂.裂纹穿晶扩展需要的驱动力比沿晶断裂大,故裂纹扩展阻力曲线的上升趋势更加显著.裂纹穿晶扩展路径主要取决于内晶颗粒产生的弹性应力场的性质.     

常压烧结制备亚微米晶Al2O3陶瓷及其力学性能研究

以高纯α-Al2O3粉体为原料,MgO-Y2O3为烧结助剂,采用常压烧结法制备亚微米晶Al2O3陶瓷。研究了烧结温度、烧结助剂对Al2O3陶瓷的致密化过程、显微结构及力学性能的影响。结果表明:添加一定量的复合助剂MgO-Y2O3可起到促进Al2O3陶瓷致密化,细化显微结构,并改善其力学性能的作用。经1450℃常压烧结1h可获得相对密度达99.6%、平均晶粒尺寸约0.71μm的亚微米晶Al2O3陶瓷,其维氏硬度和断裂韧性分别为18.5GPa和4.6 MPa·m1/2。     

常压烧结制备亚微米晶Al2O3陶瓷及其力学性能研究

以高纯α-Al2O3粉体为原料,MgO-Y2O3为烧结助剂,采用常压烧结法制备亚微米晶Al2O3陶瓷。研究了烧结温度、烧结助剂对Al2O3陶瓷的致密化过程、显微结构及力学性能的影响。结果表明:添加一定量的复合助剂MgO-Y2O3可起到促进Al2O3陶瓷致密化,细化显微结构,并改善其力学性能的作用。经1450℃常压烧结1h可获得相对密度达99.6%、平均晶粒尺寸约0.71μm的亚微米晶Al2O3陶瓷,其维氏硬度和断裂韧性分别为18.5GPa和4.6 MPa·m1/2。     

纳米Al2O3p/Cu复合材料的制备及其性能研究

采用高能球磨法制备了纳米Al2O3p/Cu复合材料粉体,复合粉体经过压制、烧结和挤压后成为铜复合材料,采用X射线衍射(XRD)、扫描电镜(SEM)、能谱仪(EDS)、电导仪等测试方法,研究了球磨后的复合粉体和复合材料显微结构、电导率和硬度.实验证明,粉体经过2h以上球磨后,Al2O3相逐渐消失,复合粉体为纳米晶结构,晶粒直径66～87nm.随着Al2O3粉体含量增加,铜复合材料的电导率显著下降.烧结后挤压有利于复合材料导电性能的提高.当Al2O3粉体含量1wt%、球磨6h时,烧结后重新挤压的复合材料试样电导率IACS 76%、硬度HB 83.8.     

VLE data for CO2-CF2Cl2, N2-CO2, N2-CF2Cl2 and N2-CO2-CF2Cl

Knowledge about vapour-liquid (VLE) is required as a basis of reliable calculations for separation processes. Correlations available for the prediction of T, p, x, y data are less accurate for mixtures at high pressures and mixtures containing supercritical components. The results of VLE experiments are reported and compared with data calculated with equations of state.     

Thermal diffusion in binary mixtures H2-CCl2F2 and H2-CHClF2

Thermal diffusion coefficients were measured in two gaseous mixtures, in which one component was close to the critical temperature, in the pressure range (19.6–127.4)·10⁴ N/m² and at a freon concentration of 0.25–0.8.     

Preparation of ZrO2-CeO2 and HfO2-CeO2 nanopowders

We prepared weakly agglomerated powders of ZrO₂-CeO₂ and HfO₂-CeO₂ solid solutions 5–8 nm in particle size, consisting of monoclinic and tetragonal phases. After heat treatment at 1200°C, the crystallite size was 30 and 14 nm, respectively. We also examined the effect of precipitate freeze drying on the crystallization of hafnia-based solid solutions containing up to 20 mol % CeO₂.     

Comparison of the Electronic Structures of La2CuO4, Sr2CuO2Cl2, and Sr2CuO2F2

First-principles cluster calculations are reported of the local electronic structure of the three compounds: La₂CuO₄, Sr₂CuO₂Cl₂, and Sr₂CuO₂F₂. The copper ${\text{3d}}_{x^2 - y^2 } $ and the planar oxygen 2p _σ atomic orbitals exhibit a similar degree of covalency. The out-of-plane orbitals, however, are quite different with the ${\text{3}}d_{3z^2 - r^2 } $ atomic orbital lowered significantly in energy for chlorine and fluorine apical positions.     

Radial GRIN glasses in Li2O-Na2O-Al2O3-TiO2-SiO2 systems

A series of GRIN glass rods have been developed in Li2O-Na2O-Al2O3-TiO2-SiO2 systems. Negative radial refractive index profiles were generated by exchanging Na+ for Li+ ions in these glass rods. It has been observed that TiO2 plays a vital role in increase in the profile depth and maximum change in the refractive index because of its ambivalent nature. Change in the refractive index can be further increased by increasing the concentration of exchanging cation in the base glass.     

Elastic and Electronic Properties of Superconducting CaPd 2 As 2 and SrPd 2 As 2 vs. Non-superconducting BaPd 2 As 2

The first-principles calculations were performed to predict the elastic and electronic properties of the superconducting ThCr₂Si₂-type phases CaPd₂As₂ and SrPd₂As₂ in comparison with the non-superconducting CeMg₂Si₂-type phase BaPd₂As₂. Besides, the same properties were compared for CeMg₂Si₂- and ThCr₂Si₂-type polymorphs of BaPd₂As₂. We found that all these phases are mechanically stable and belong to soft materials with low hardness. The near-Fermi region is formed by the valence states of the blocks [Pd₂As₂] with decisive contributions of Pd 4d states. The values of N(E _F) increase in the sequence: CaPd₂As₂ < SrPd₂As₂ < BaPd₂As₂, i.e. in the reverse sequence relative to the transition temperatures T _C. Thus, the change in T _C cannot be explained by the electronic factor, i.e. by the simple correlation T _C～N(E _F). Most likely the decrease in T _C in the sequence CaPd₂As₂ → SrPd₂As₂ and the absence of a superconducting transition in BaPd₂As₂ are related to the structural factors and the peculiarities of the electron–phonon coupling mechanism.     

Si_2N_2O-Al_2O_3-La_2O_3和Si_2N_2O-Al_2O_3-CaO系统的亚固相关系

本文给出了 Si_2N_2O-Al_2O_3-La_2O_3和 Si_2N_2O-Al_2O_3-CaO 系统的亚固相图。实验结果表明:在 Si_2N_2O-Al_2O_3-CaO 系统中有一个未知结构的新化合物 CaO·Si_2N_2O,在3CaO·Si_2N_2O 和3CaO·Al_2O_3两化合物之间形成连续立方固溶体。而 Si_2N_2O-Al_2O_3-La_2O_3系统中则没有发现新化合物。在两个系统的富 Si_2N_2O区,过量的 Si_2N_2O 与 La_2O_3和 CaO 分别反应形成 Si_3N_4与 La_(10)[SiO_4]_(?)N_2(H-相)(和 CaSiO_3。所研究的这两个三元系统中,分别形成了如下几个四元相容性区。在 Si_2N_2O-Al_2O_3-La_2O_3系统内有:H-Si_3N_4-La_2O_3·Si_2N_2O-La_2O_3·Al_2O_3;H-Si_3N_4-La_2O_3·Al_2O_3-La_2O_3·11 Al_2O_3;H-Si_3N_4-La_2O_3·11 Al_2O_3-Al_2O_3;H-Si_3N_4-Al_2O_3-O′s.s;H-Si_3N_4-O′s.s-Si_2N_2O在 Si_2N_2O-Al_2O_3-CaO 系统内有:Si_3N_4-CaSiO_3-CaO·Si_2N_2O-3CaO·Al_2O_3;Si_3N_3-CaSiO_3-3CaO·Al_2O_3-2CaO·Al_2O_3·SiO_(?);Si_(?)N_(?)-CaSiO_3-2CaO·Al_2O_3·SiO_2-Al_2O_3;Si_3N_4-CaSiO_3-Al_2O_(?)-O′s.s;Si_3N_4-CaSiO_3-O′s.s-Si_(?)N_(?)O