High-Speed X-Cut Thin-Sheet LiNbO3 Optical Modulator With Folded Structure

We propose a small-footprint X-cut thin-sheet lithium niobate optical modulator with high-speed and low-driving-voltage characteristics. Since an optical waveguide is folded by a mirror placed at one edge of the modulation chip, the chip can be shortened by about half. In addition, a wide modulation bandwidth can be achieved, because the path-length difference between the optical waveguide and the coplanar-waveguide (CPW) electrode is decreased to as short as possible by placing the CPW electrode as far as possible along the optical waveguide in the folded portion, and the microwave effective index is set to realize effective velocity matching between the lightwave and the microwave. A small footprint of 1.78 times 29 mm, a low half-wave voltage of 2.0 V at dc, and a 3-dBe modulation bandwidth of 20 GHz were obtained.     

Ultra-high-speed multiple-quantum-well electro-absorption opticalmodulators with integrated waveguides

Integrating the input and output waveguides with a multiple-quantum-well (MQW) electro-absorption (EA) optical modulator is shown to achieve ultra-high-speed modulation while keeping the total device length long enough for easy fabrication and packaging. Testing with fabricated modulators showed that a shorter modulation region results in a larger modulation bandwidth. The additional loss due to the waveguide integration was less than 1 dB. An optimized modulator showed a large modulation bandwidth of 50 GHz, a low driving voltage of less than 3 V, and a low insertion loss of 8 dB. A prototype module of this modulator had a bandwidth of greater than 40 GHz. Optimizing the MQW structure makes the modulator insensitive to polarization. These results demonstrate that MQW-EA modulators with integrated waveguides are advantageous in terms of fabrication, packaging, and ultra-high-speed modulation     

75 GHz broadband Ti:LiNbO3 optical modulator with ridgestructure

The authors propose a Ti:LiNbO₃ optical modulator employing a ridge structure with a thick electrode. The structure offers a low microwave propagation loss and strong interaction between microwaves and optical waves under conditions of velocity matching and impedance matching, resulting in a large modulation bandwidth and low driving voltage. Using this device, the authors have developed an optical intensity modulator with a 3 dB optical bandwidth of 75 GHz and a driving voltage of 5.0 V at 1.5 μm     

A broadband Ti:LiNbO3 optical modulator with a ridgestructure

We describe the design, fabrication, and characteristics of a Ti:LiNbO₃ optical modulator with a ridge structure. The structure keeps microwave propagation loss low and enables a large interaction between microwaves and optical waves under the conditions of velocity-matching and impedance matching, resulting in a large modulation bandwidth and low driving voltage. Using this structure, we have developed an optical intensity modulator with an optical 3-dB bandwidth of 75 GHz and a driving voltage of 5.0 V at a wavelength of 1.5 μm     

Electro-optic Y-junction modulator/switch

A new type of electro-optic channel-waveguide modulator/switch for integrated optics has been proposed and demonstrated in which the transverse confinement of The guided optical wave in a channel waveguide is controlled and the optical energy is selectively fed to either Y-junction output port by control of the applied electric field. The device exhibited 75% modulation depth for an applied voltage swing of 6 V peak to peak and a potential bandwidth of 10 GHz.     

A Ti:LiNbO/sub 3/ optical intensity modulator with more than 20 GHz bandwidth and 5.2 V driving voltage

A broadband and low driving-voltage Ti:LiNbO/sub 3/ optical intensity modulator is described. A coplanar waveguide with a shielding plane is used for optical-electrical velocity matching and a confined waveguide is used for lowering the driving voltage. The relationship between the mode size of the guided wave and the driving voltage is shown. This modulator has an electrical 3-dB bandwidth of more than 20 GHz and a driving voltage of 5.2 V at a wavelength of 1.5 mu m.<>     

A wide-band Ti:LiNbO3 optical modulator with aconventional coplanar waveguide type electrode

The design and fabrication parameters needed to obtain a low-loss coplanar waveguide structure were determined. A large optical bandwidth (more than 23 GHz) and low driving voltage (5 V) Ti:LiNbO₃ Mach-Zehnder interferometer type optical modulator at a wavelength of 1.52 μm, using a conventional and thick coplanar waveguide type electrode structure     

高速硅基单端推挽驱动狭缝脊波导调制器

针对硅基单端推挽驱动调制器的脊波导pn结部分结电容较大,限制了调制器带宽进一步提高的问题,提出了一种狭缝脊波导pn结结构。通过将脊波导pn结蚀刻一定尺寸的狭缝,降低了pn结电容,实现了带宽的提升。对两种pn结进行了仿真对比,结果表明,在相同电极结构与掺杂条件下,狭缝脊波导调制器比脊波导调制器的电光带宽提升了约8.3 GHz。基于优化的单端推挽驱动狭缝脊波导调制器,仿真实现了90 Gbit/s的OOK信号调制,眼图消光比为14.69 dB。     

脊波导结构LiNbO3调制器的分析与设计

本文利用保角变换法对脊波导结构调制器进行了分析,特别针对在制做脊波导时的非理想矩形的情况,对它造成的偏差进行了计算,在此基础上得出了脊型共面波导结构调制器的等效折射率,特性阻抗,调制带宽和驱动电压等特性。在速度匹配,阻抗匹配,半波电压以及制做的困难程度等折中考虑下对调制器的各项参数进行了优化。结果表明了这新型结构在保持较大特性阻抗的同时,有效的降低等效折射率,大大地提高了调制带宽,迎合了更高速光纤通信的要求。     

共面波导电极聚合物电光调制器多层结构研究

提出了两种基于共面波导(CPW)电极的多层聚合物电光调制器模型结构,分别为补偿层型结构和屏蔽层型结构。采用了保角变换的计算方法给出了基于CPW电极结构的多层电光调制器的特性参数的计算结果。与传统调制器结构性比较,补偿层型结构能够有效的减小光波与微波传输有效折射率的差,屏蔽层型结构不仅能够减小光波与微波传输有效折射率的差,而且能够通过优化结构参数,有效地消除了微波与光波之间的折射率差,可实现调制信号速率和调制电极阻抗的同时匹配。     

High-speed electroabsorption modulator with strip-loaded GaInAsP planar waveguide

We describe fabrication and characterization of an electroabsorption (EA) light modulator (LM) with a strip-loaded GaInAsP planar waveguide. The EA LM's were fabricated from hydride vapor-phase-epitaxy (VPE) grown wafers. The electroabsorption, the insertion loss, the electrical properties, and the modulation characteristics were investigated for the EA LM's. The drive voltage at a 99-percent modulation depth has been noticeably reduced to 4.5 V by optimizing the thicknesses of the epitaxial layers. The total capacitance of 1.5 pF was obtained by inserting an insulating film under the wire-bonding pad and by improving the mount design. Consequently, a 3-dB bandwidth of 3.8 GHz has been achieved and a pulse modulation operation under 2 Gbit/s nonreturn-to-zero (NRZ) pseudorandom pattern has also been confirmed. Moreover, the dynamic spectra of the EA modulators were measured for the first time. A spectral broadening factor α has been determined to be 1-4 from a relative strength of the sideband to the carrier and it has been experimentally found to decrease with increasing the electric field inside the absorptive waveguide. As the other measures of merit for the EA LM's, the extinction ratio over 23 dB and the insertion loss of 10-14 dB including a coupling loss due to an end-fire method were obtained. As a whole, these results have exhibited that the EA LM is a promising external modulator which will be monolithically integrated into a gigabit per second optical source with a dynamic single-mode laser.     

中红外波段高速硅基电光调制器设计与优化（特邀）

作为中红外波段中最接近O波段和C波段的波段,2 μm波段区域逐渐引起人们的广泛关注。主要对2 μm波段的马赫-增德尔型调制器进行优化设计和仿真,根据2 μm波长下光模场分布的特点,选用具有340 nm厚度顶层硅的SOI衬底,结合实际工艺中240 nm硅刻蚀深度,得到宽度为600 nm以及平板层厚度为100 nm的最优脊波导结构。通过优化掺杂浓度和掺杂区位置获得综合性能最优的调制器器件,在4 V反向偏压下器件光损耗为5.17 dB/cm,调制效率为2.86 V·cm,静态消光比为23.8 dB,3dB EO带宽为27.1 GHz。同时,与220 nm厚度顶层硅器件相比较,器件的综合性能更为优越。研究内容为后续器件实际制作提供了依据,也为后续2 μm波段光收发集成模块所需调制器设计提供了新的方向。     

Monolithically integrated resonator microoptic gyro on silicaplanar lightwave circuit

We report a novel configuration of resonator microoptic gyro (MOG), which is monolithically integrated on silica planar lightwave circuit (PLC) with countermeasures for noise factors. Optical ring-resonator gyros suffer mainly from polarization fluctuation induced noise and backscattering induced noise. We discuss eigenstate of polarization in the waveguide to clarify behavior of the former and propose a countermeasure with control of the waveguide birefringence. As for the latter, binary phase shift keying (B-PSK) with a special signal processing is proposed. Thermooptic (TO) phase modulation is the only one scheme to apply B-PSK in the silica waveguide, whose bandwidth is limited to ~1 KHz. To utilize the narrow bandwidth of the TO modulator effectively, we propose an electrical signal processing scheme and a modulation waveform to compensate the frequency response. By constructing an experimental setup, suppression of the backscattering induced noise is demonstrated, and the gyro output is observed with applying an equivalent rotation     

GaAs traveling-wave optical modulator using a modulated coplanar strip electrode with periodic cross-tie overlay

This paper proposes and analyzes a GaAs traveling-wave optical modulator which uses a modulated coplanar strip electrode with periodic cross-tie overlay. This slow-wave structure can be designed to satisfy phase velocity and impedance matching conditions simultaneously. The dominant conductor loss in the slow-wave structure is reduced using the modulated coplanar strip electrode. The calculated 3-dB modulation bandwidth (100 GHz) is much wider than the bandwidth limit (30 GHz) of conventional electrode structures that are limited by phase velocity mismatch.     

高性能硅基MOS电光相位调制器

提出了一种SOI新型MOS电容型电光调制器.与普通单一电容型MOS调制器相比,由三层栅氧化层形成的新型MOS电容型调制器提高了调制效率.模拟显示,调制电压和调制长度乘积为VπLπ=2.4V·cm,上升和下降时间分别为80和40ps,带宽达到了8GHz.通过减小器件尺寸能进一步提高调制效率和调制速度.     

Millimeter-wave Ti:LiNbO3 optical modulators

The design, fabrication, and characteristics of ridged Ti:LiNbO ₃ optical modulators that work in the millimeter-wave region are presented. A new concept of design under velocity matching is demonstrated for the proposed modulator. It has been shown by calculation that impedance matching is achieved and conductor loss is greatly reduced under velocity matching with wider gaps and a thicker coplanar waveguide electrode in conjunction with a ridge structure. Two types of Mach-Zehnder optical intensity modulators for the wavelength of 1.5 μm are developed. A fully packaged module for 40 Gb/s transmission with a half-wave voltage of 3.5 V and a broadband modulator responsible up to 100 GHz with a half-wave voltage of 5.1 V     

Technique for velocity-matched traveling-wave electroopticmodulator in AlGaAs/GaAs

A design for a velocity-matched traveling-wave directional-coupler intensity modulator in AlGaAs/GaAs is proposed. The structure utilizes a thin coating of Ta₂O₅ on the top of the modulator/electrode structure in order to achieve velocity matching between the optical wave and microwave signal. The film does not significantly affect the optical properties or voltage requirements of the modulator. The optical and RF characteristics of the modulator are analyzed using the effective-index and finite-difference methods. The optical bandwidth is calculated numerically, taking into account both the anticipated velocity mismatches due to fabrication tolerances and the calculated frequency-dependent microwave losses. The predicted small-signal bandwidth of a 3 mm long direction coupler biased at a null point is greater than 45 GHz, and exceeds 100 GHz (~50 GHz electrical bandwidth) when the coupler is biased in the linear region. This device is designed to operate at 830 nm with a maximum modulation voltage of 5 V. The figure of merit of the proposed device is therefore at least 10 GHz/V when an electrical bandwidth of 50 GHz is used     

Electroabsorption waveguide modulators at 1.3 /spl mu/m fabricated on GaAs substrates

An InGaAs-InAlAs multiple-quantum-well (MQW) electroabsorption (EA) waveguide modulator fabricated on a GaAs substrate has been designed and characterized at 1.3-/spl mu/m wavelength for microwave signal transmission on an analog fibre-optic link. The modulator structure with a lattice constant 2.5% larger than that of GaAs is grown upon a 0.7-/spl mu/m-thick three-stage compositionally step-graded In/sub z/Al/sub 1-z/As relaxed buffer. The waveguide modulator exhibits a high-electrooptic slope efficiency of 0.56 V/sup -1/, a 3-dB electrical bandwidth of 20 GHz, and a large optical saturation intensity in excess of 17 mW. These high-speed optoelectronic modulators could potentially be integrated with on-chip GaAs electronic driver circuits.     

High-Speed Low-Loss Schottky-i-n InP-Based Optical Modulator for RF Photonics

An InP-based high-speed optical modulator is presented. The Schottky-i-n waveguide structure on InP-based material was used to reduce the switching voltage V_pi and the excess loss, while maintaining high-modulation efficiencies. To minimize residual amplitude modulation and to improve power handling capability, the bulk electrooptic effect in InGaAlAs was utilized for phase shifting. As a result, a simple structure InAlAs-InGaAlAs Mach-Zehnder optical modulator with traveling-wave electrodes was fabricated and characterized. This device achieved a switching voltage V_pi of 3.6 V, extinction ratio (>23 dB) and high-speed operation at 1.55-mum wavelength     

钛扩散LiNbO_3波导干涉仪调制器

研制成Ti扩散LiNbO_3波导干涉仪调制器。在0.6328微米的光波长下加1千赫方波信号。50千赫的脉冲信号和100千赫～30兆赫的正弦波信号进行了调制实验。实验样品的最大调制深度87％,半波电压V_π=45伏,电容8微微法,3分贝带宽可达800兆赫。