共查询到20条相似文献,搜索用时 31 毫秒
1.
Zaknoune M. Ardouin M. Cordier Y. Bollaert S. Bonte B. Theron D. 《Electron Device Letters, IEEE》2003,24(12):724-726
We report on a double-pulse doped, double recess In/sub 0.35/Al/sub 0.65/As-In/sub 0.35/Ga/sub 0.65/As metamorphic high electron mobility transistor (MHEMT) on GaAs substrate. This 0.15-/spl mu/m gate MHEMT exhibits excellent de characteristics, high current density of 750 mA/mm, extrinsic transconductance of 700 mS/mm. The on and off state breakdown are respectively of 5 and 13 V and defined It gate current density of 1 mA/mm. Power measurements at 60 GHz were performed on these devices. Biased between 2 and 5 V, they demonstrated a maximum output power of 390 mW/mm at 3.1 V of drain voltage with 2.8 dB power gain and a power added efficiency (PAE) of 18%. The output power at 1 dB gain compression is still of 300 mW/mm. Moreover, the linear power gain is of 5.2 dB. This is to our knowledge the best output power density of any MHEMT reported at this frequency. 相似文献
2.
The authors investigate experimentally for the first time the improvements in the linewidth enhancement factor, alpha , resulting from simultaneous addition of strain and p-doping in high-speed GaAs-based multiquantum well lasers. The alpha factor is determined from measured changes in both gain and refractive index as a function of CW bias current, yielding alpha 3.1 and 1.4 at the threshold lasing wavelength for unstrained GaAs/Al/sub 0.25/Ga/sub 0.75/As and p-doped strained In/sub 0.35/Ga/sub 0.65/As/GaAs devices, respectively.<> 相似文献
3.
Wei-Chou Hsu Yeong-Jia Chen Ching-Sung Lee Tzong-Bin Wang Yu-Shyan Lin Chang-Luen Wu 《Electron Device Letters, IEEE》2005,26(2):59-61
We report, to our knowledge, the best high-temperature characteristics and thermal stability of a novel /spl delta/-doped In/sub 0.425/Al/sub 0.575/As--In/sub 0.65/Ga/sub 0.35/As--GaAs metamorphic high-electron mobility transistor. High-temperature device characteristics, including extrinsic transconductance (g/sub m/), drain saturation current density (I/sub DSS/), on/off-state breakdown voltages (BV/sub on//BV/sub GD/), turn-on voltage (V/sub on/), and the gate-voltage swing have been extensively investigated for the gate dimensions of 0.65/spl times/200 /spl mu/m/sup 2/. The cutoff frequency (f/sub T/) and maximum oscillation frequency (f/sub max/), at 300 K, are 55.4 and 77.5 GHz at V/sub DS/=2 V, respectively. Moreover, the distinguished positive thermal threshold coefficient (/spl part/V/sub th///spl part/T) is superiorly as low as to 0.45 mV/K. 相似文献
4.
Hsien-Chin Chiu Yi-Chyun Chiang Chan-Shin Wu 《Electron Device Letters, IEEE》2005,26(10):701-703
A high breakdown voltage and a high turn-on voltage (Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/In/sub 0.5/P/InGaAs quasi-enhancement-mode (E-mode) pseudomorphic HEMT (pHEMTs) with field-plate (FP) process is reported for the first time. Between gate and drain terminal, the transistor has a FP metal of 1 /spl mu/m, which is connected to a source terminal. The fabricated 0.5/spl times/150 /spl mu/m/sup 2/ device can be operated with gate voltage up to 1.6 V owing to its high Schottky turn-on voltage (V/sub ON/=0.85 V), which corresponds to a high drain-to-source current (I/sub ds/) of 420 mA/mm when drain-to-source voltage (V/sub ds/) is 3.5 V. By adopting the FP technology and large barrier height (Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/In/sub 0.5/P layer design, the device achieved a high breakdown voltage of -47 V. The measured maximum transconductance, current gain cutoff frequency and maximum oscillation frequency are 370 mS/mm, 22 GHz , and 85 GHz, respectively. Under 5.2-GHz operation, a 15.2 dBm (220 mW/mm) and a 17.8 dBm (405 mW/mm) saturated output power can be achieved when drain voltage are 3.5 and 20 V. These characteristics demonstrate that the field-plated (Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/In/sub 0.5/P E-mode pHEMTs have great potential for microwave power device applications. 相似文献
5.
Weisser S. Ralston J.D. Larkins E.C. Esquivias I. Tasker P.J. Fleissner J. Rosenzweig J. 《Electronics letters》1992,28(23):2141-2143
The authors demonstrate p-type modulation-doped strained-layer In/sub 0.35/Ga/sub 0.65/As/GaAs multiquantum well lasers which achieve a 3 dB direct modulation bandwidth of 20 GHz at a low CW drive current of 50 mA in a simple 3*200 mu m/sup 2/ mesa structure. For the same device dimensions, a modulation bandwidth of 30 GHz was measured at a CW drive current of 114 mA. This is the highest direct modulation bandwidth reported for any semiconductor laser.<> 相似文献
6.
S. Weisser E.C. Larkins K. Czotscher W. Benz J. Daleiden I. Esquivias J. Fleissner J.D. Ralston B. Romero R.E. Sah A. Schonfelder J. Rosenzweig 《Photonics Technology Letters, IEEE》1996,8(5):608-610
We demonstrate record direct modulation bandwidths from MBE-grown In/sub 0.35/Ga/sub 0.65/As-GaAs multiple-quantum-well lasers with undoped active regions and with the upper and lower cladding layers grown at different growth temperatures. Short-cavity ridge waveguide lasers achieve CW direct modulation bandwidths up to 40 GHz for 6/spl times/130 /spl mu/m/sup 2/ devices at a bias current of 155 mA, which is the damping limit for this structure. We further demonstrate large-signal digital modulation up to 20 Gb/s (limited by the measurement setup) and linewidth enhancement factors of 1.4 at the lasing wavelength at threshold of /spl sim/1.1 /spl mu/m for these devices. 相似文献
7.
Mesquida Kusters A. Funke T. Sommer V. Wuller R. Brittner S. Kohl A. Heime K. 《Electronics letters》1993,29(10):841-842
High performance InP/In/sub 0.75/Ga/sub 0.25/As/InP pseudomorphic double heterojunction (DH) HEMTs with a gate length of 0.5 mu m are reported. Both DC and RF characteristics of this new type of Al-free HEMT demonstrate its suitability for microwave applications.<> 相似文献
8.
Wei-Chou Hsu Dong-Hai Huang Yu-Shyan Lin Yeong-Jia Chen Jun-Chin Huang Chang-Luen Wu 《Electron Devices, IEEE Transactions on》2006,53(3):406-412
This paper proposes a In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As (x=0.3-0.5-0.3) metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance, current driving capability, thermal stability, unity-gain cutoff frequency, maximum oscillation frequency, output power, power gain, and power added efficiency. 相似文献
9.
The first room-temperature operation of In/sub 0.5/Ga/sub 0.5/As quantum dot lasers grown directly on Si substrates with a thin (/spl les/2 /spl mu/m) GaAs buffer layer is reported. The devices are characterised by J/sub th//spl sim/1500 A/cm/sup 2/, output power >50 mW, and large T/sub 0/ (244 K) and constant output slope efficiency (/spl ges/0.3 W/A) in the temperature range 5-95/spl deg/C. 相似文献
10.
I. Esquivias S. Weisser B. Romero D. Ralston J. Rosenzweig 《Photonics Technology Letters, IEEE》1996,8(10):1294-1296
We present experimental results on the high-frequency electrical impedance of In/sub 0.35/Ga/sub 0.65/As-GaAs multiquantum-well lasers with varied p-doping levels in the active region. The analysis of the data, using a simple three rate equation model, provides information about the dynamical time constants (the carrier lifetime, the effective carrier capture and escape times) under the laser operation conditions. The addition of p-doping increases the carrier escape time at threshold from 0.7 ns, extracted for the undoped devices, up to a value higher than 2 ns for the p-doped lasers. The effective capture time is estimated to be between 2 and 5 ps. 相似文献
11.
Cheng-Kuo Lin Wen-Kai Wang Yi-Jen Chan Hwann-Kaeo Chiou 《Electron Devices, IEEE Transactions on》2005,52(1):1-5
In/sub 0.5/Al/sub 0.5/As--In/sub 0.5/Ga/sub 0.5/As metamorphic high-electron mobility transistor (mHEMT) dc-30 GHz distributed single-pole-single through (SPST) switches were designed and fabricated using the low-/spl kappa/ benzocyclobutene (BCB) bridged technology. The current gain cutoff frequency, and the electron transit time of In/sub 0.5/Al/sub 0.5/As--In/sub 0.5/Ga/sub 0.5/As mHEMTs have been investigated. By analyzing the extrinsic total delay time, the effective velocity of electrons can be estimated, and the average velocity is 2.3/spl times/10/sup 7/cm/s. The dc-30 GHz distributed wideband SPST switch exhibits an insertion loss of less than 5.5 dB, and an isolation larger than 30 dB, which is the first demonstration of the high-isolation of InAlAs-InGaAs mHEMTs monolithic switch. As to the power performance, this switch can handle the power up to 12 dBm at 2.4 GHz. After over 250 h of 85-85 (temperature =85/spl deg/C, humidity =85%) environmental evaluation, this BCB passivated and bridged microwave and monolithic integrated circuit switch demonstrates reliable RF characteristics without any significant performance change, which proves that this process using the low-/spl kappa/ BCB layer is attractive for millimeter-wave circuit applications. 相似文献
12.
Loural M.S.S. Morosini M.B.Z. Herrera-Perez J.L. Von Zuben A.A.G. da Silveira A.C.F. Patel N.B. 《Electronics letters》1993,29(14):1240-1241
Using theoretical fitting to measured transverse far field patterns in Ga/sub 0.86/In/sub 0.14/As/sub 0.13/Sb/sub 0.87//Ga/sub 0.73/Al/sub 0.27/As/sub 0.02/Sb/sub 0.98/ DH lasers emitting at 2.2 mu m the authors estimated the value of the active layer refractive index as 3.78. This value, higher than assumed earlier based on theoretical calculations, ensures good optical confinement for this kind of heterostructure and provides a good theoretical fit with the authors' experimental data of threshold current density against active layer thickness.<> 相似文献
13.
Kow-Ming Chang Jiunn-Yi Chu Chao-Chen Cheng 《Photonics Technology Letters, IEEE》2004,16(8):1807-1809
Indium-tin-oxide (ITO) is deposited as a transparent current spreading layer of GaN-based light-emitting diodes (LEDs). To reduce the interfacial Schottky barrier height, a thin p-In/sub 0.1/Ga/sub 0.9/N layer is grown as an intermediate between ITO and p-GaN. The contact resistivity around 2.6/spl times/10/sup -2/ /spl Omega//spl middot/cm/sup 2/ results in a moderately high forward voltage LED of 3.43 V operated at 20 mA. However, the external quantum efficiency and power efficiency are enhanced by 46% and 36%, respectively, in comparison with the conventional Ni-Au contact LEDs. In the life test, the power degradation of the p-In/sub 0.1/Ga/sub 0.9/N-ITO contact samples also exhibits a lower value than that of the conventional ones. 相似文献
14.
A photovoltaic detector based on an N/sup +/-InAs/sub 0.55/Sb/sub 0.15/P/sub 0.30//n/sup 0/-InAs/sub 0.89/Sb/sub 0./$ d1/sub 1//P/sup +/-InAs/sub 0.55/Sb/sub 0.15/P/sub 0.30/ double heterostructure (DH) suitable for operation in the mid-infrared (MIR) spectral region (2 to 5 /spl mu/m) at room temperature has been studied. A physics based closed form model of the device has been developed to investigate the relative importance of the different mechanisms which determine dark current and photoresponse. The results obtained on the basis of the model have been compared and contrasted with those obtained from experimental measurements on DH detectors fabricated previously in our laboratory using liquid phase epitaxy (LPE). The model helps to explain the various physical mechanisms that shape the characteristics of the device under room temperature operation. It can also be used to optimize the performance of the photodetector in respect of dark current, responsivity and detectivity. A comparison of theoretical predictions and experimental results revealed that Shockley-Read-Hall (SRH) recombination is more important than Auger recombination in determining the room temperature detector performance when the concentration of nonradiative recombination centers in our material exceeds 10/sup 17/ cm/sup -3/. Furthermore, compositional grading in the cladding regions of the double heterostructure has been found to be responsible for the reduction of the detectivity of the device in the shorter wavelength region. 相似文献
15.
H. Shoji K. Mukai N. Ohtsuka M. Sugawara T. Uchida H. Ishikawa 《Photonics Technology Letters, IEEE》1995,7(12):1385-1387
A laser oscillation from self-organized In/sub 0.5/Ga/sub 0.5/As quantum dots is achieved at 80 K by current injection. Lasing at a three-dimensionally quantum confined sublevel of the In/sub 0.5/Ga/sub 0.5/As quantum dots is clearly demonstrated for the first time by electroluminescence and diamagnetic energy shift measurement. The results predict the possibility of ultra-low threshold current operation of quantum dot lasers. 相似文献
16.
Gong-Ru Lin Hao-Chung Kuo Chi-Kuan Lin Feng M. 《Quantum Electronics, IEEE Journal of》2005,41(6):749-752
A novel top-illuminated In/sub 0.53/Ga/sub 0.47/As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using linearly graded metamorphic In/sub x/Ga/sub 1-x/P (x graded from 0.49 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PINPD with aperture diameter of 60 /spl mu/m are 13 pA, 0.6 A/W, 3.4/spl times/10/sup -15/ W/Hz/sup 1/2/, and 7.5 GHz, respectively, at 1550 nm. The performances of the MM-PINPD on GaAs are demonstrated to be comparable to those of a similar device made on InGaAs-InP substrate. 相似文献
17.
Merkel K.G. Bright V.M. Schauer S.N. Huang C.I. Robinson G.D. 《Electronics letters》1993,29(5):480-481
GeMoW is presented as a refractory ohmic contact to n-type GaAs with an In/sub 0./5Ga/sub 0.5/As cap layer. The contact exhibits ohmic behaviour over a wide annealing temperature range from 300 to 700 degrees C. A minimum contact resistance of 0.176 Omega mm was obtained following furnace annealing at 500 degrees C.<> 相似文献
18.
Hsing-Yuan Tu Tao-Hsuan Chou Yo-Sheng Lin Hsien-Chin Chiu Ping-Yu Chen Wen-Chung Wu Shey-Shi Lu 《Electron Device Letters, IEEE》2003,24(3):132-134
The DC and RF characteristics of Ga/sub 0.49/In/sub 0.51/P-In/sub 0.15/Ga/sub 0.85/As enhancement- mode pseudomorphic HEMTs (pHEMTs) are reported for the first time. The transistor has a gate length of 0.8 /spl mu/m and a gate width of 200 /spl mu/m. It is found that the device can be operated with gate voltage up to 1.6 V, which corresponds to a high drain-source current (I/sub DS/) of 340 mA/mm when the drain-source voltage (V/sub DS/) is 4.0 V. The measured maximum transconductance, current gain cut-off frequency, and maximum oscillation frequency are 255.2 mS/mm, 20.6 GHz, and 40 GHz, respectively. When this device is operated at 1.9 GHz under class-AB bias condition, a 14.7-dBm (148.6 mW/mm) saturated power with a power-added efficiency of 50% is achieved when the drain voltage is 3.5 V. The measured F/sub min/ is 0.74 dB under I/sub DS/=15 mA and V/sub DS/=2 V. 相似文献
19.
Hsien-Chin Chiu Shih-Cheng Yang Yi-Jen Chan Shu-Han Chen Wei-Sheng Liu Jen-Inn Chyi 《Electron Devices, IEEE Transactions on》2004,51(1):156-158
The properties of doped-channel field-effect transistors (DCFET) have been thoroughly investigated on Al/sub x/Ga/sub 1-x/As/InGaAs (x= 0.3, 0.5, 0.7, 1) heterostructures with various Al mole fractions. In this study, we observed that by introducing a 200-/spl Aring/-thick Al/sub 0.5/Ga/sub 0.5/As (x=0.5) Schottky layer can enhance the device power performance, as compared with the conventional x=0.3 AlGaAs composition system. However, a degradation of the device power performance was observed for further increasing the Al mole fractions owing to their high sheet resistance and surface states. Therefore, Al/sub 0.5/Ga/sub 0.5/As Schottky layer design provides a good opportunity to develop a high power device for power amplifier applications. 相似文献
20.
We report the growth by low-pressure metal-organic chemical vapor deposition, fabrication, and characterization of ten-layer In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot infrared photodetectors. Normal incidence photoresponse of the detector was obtained at 5.9 /spl mu/m. The 77-K peak responsivity was 5.6 mA/W with the detectivity D/sup */ of 1.2/spl times/10/sup 9/ cm/spl middot/Hz/sup 1/2//W at the bias of 0.4 V. 相似文献