共查询到19条相似文献,搜索用时 140 毫秒
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以自制的CAS(CaO-Al2O3-SiO2)系玻璃作为功能相,通过分析不同的有机组分对流延浆料流变性能及分散稳定性的影响,优选:甲基乙基酮-乙醇为二元共沸溶剂;磷酸三丁酯为分散剂。浆料的黏度随粘结剂加入量增大而增大。随着增塑剂含量的增加,浆料黏度先减小后增大,当ζ(增塑剂:粘结剂)=0.6时,浆料黏度最低。流延浆料的最佳配方为:玻璃粉100.0g,粘结剂18.0g,磷酸三丁酯3.0g,增塑剂10.8g,溶剂为150.0~170.0g。流延生带样品于950℃烧结后获得相对密度达到96%,相对介电常数为6.97,介电损耗低于0.3%(1MHz)的玻璃陶瓷基板材料。 相似文献
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<正> 最近国外专利报导了一种锌导电浆料,特别适用于制作陶瓷电容器、可变电阻器以及其它电子元件的电极。 通常,陶瓷电容器和可变电阻器的电极浆料为银浆料,由银粉,玻璃粉和有机载体组成。但是,用贵金属银作电子元件电极,成本较高。 相似文献
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MLCC钯银内电极浆料性能研究 总被引:3,自引:2,他引:1
MLCC钯银内电极浆料主要由钯银粉、有机载体和无机添加剂三部分组成.试验表明:钯银粉中钯的含量决定了浆料的烧成温度及成本价格的高低;有机载体的作用是提供浆料一定的流变性能,以满足浆料在MLCC丝网印刷时的工艺要求,有机载体触变性的大小直接影响着浆料丝印图形质量的好坏;无机添加剂的作用是抑制浆料在烧成过程中的过快收缩,选择不同的无机添加剂可以调整浆料在烧成过程中其所形成的电极层与介质层之间的烧成收缩率的匹配,避免MLCC产品由于匹配问题所引起电极开裂等质量问题. 相似文献
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调节球形银粉和片状银粉不同配比,使片状银粉的质量分数为:0、20%、40%、60%、80%和100%。通过黏度、电阻率和附着力测试,以及可焊性实验和水煮实验,对片状银粉质量分数对烧结型浆料各性能的影响进行了研究。结果显示随着片状银粉用量的增加,浆料的黏度、触变性、电阻率及可焊性也随之增加;随着片状银粉质量分数的增加,烧结膜附着力先增加后降低,当质量分数达到40%时附着力最佳;随着片状银粉用量的增加,浆料的可靠性呈下降趋势。 相似文献
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ZnO压敏电阻器对所用银浆附着力要求较高,通过对ZnO压敏电阻器用银浆料中玻璃粉的研究,提出了用复合玻璃粉制备ZnO压敏电阻器用银浆料。浆料经不同温度烧成后,测得了烧成膜与基体附着力的数据,复合玻璃粉S2:S5的最佳质量比为1:2.5,复合玻璃粉添加量(质量分数)为3.5%时,可显著提高浆料对基体的附着力。结果表明:可采用适合于480~580℃烧成温度的复合玻璃粉来提高烧成膜的致密性及对基体的附着力。并对其机理进行了探讨。 相似文献
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Traditional materials used in chip-level interconnections are not compatible with the high-temperature operation of wide-bandgap
high-power semiconductor devices; therefore, this paper studies sintered nano-silver as a novel interconnect material mounting
semiconductor devices onto metallized substrates. A low-temperature sintering process was employed in the preparation of a
sintered nano-silver die-attachment. The physical mechanisms in volatilization and burnout of the added organic components
employed in nano-silver paste were analyzed primarily by thermal gravimetric analysis (TGA) to obtain a reasonable temperature-controlling
profile. The shear strength of sintered nano-silver joints was investigated, and the evolution of microstructure in the nano-silver
paste sintering process was observed using a scanning electron microscope (SEM) in this process. The effects of sintering
temperature, heating rate, and holding time during the sintering process were analyzed according to the densification mechanism.
The microstructural observations and shear strength tests showed that a sintering temperature of 285°C, heating rate of 10°C/min,
and holding time of 60 min were the best conditions for using this kind of silver paste. 相似文献
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银电极焊接是影响SrTiO3环形压敏电阻器性能的重要因素,不同的银电极浆料成分、烧结温度条件下,其性能差异很大。通过对比实验发现,影响焊接性能的主要原因是银电极与元件之间形成的非欧姆接触以及助焊剂渗入烧结电极时,电极表面产生的气孔。提出烧结电极时,采用掺杂锌粉的银浆可大幅度提高焊接性能;填充氧化锌粉末可有效阻止松香渗入及气孔产生;电极烧结温度在750℃左右焊接性能最佳,V1mA的变化率为8.822%。 相似文献
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Guofeng Bai J. Jian Yin Zhiye Zhang Guo-Quan Lu van Wyk J.D. 《Advanced Packaging, IEEE Transactions on》2007,30(3):506-510
In this paper, we present the realization of high-temperature operation of SiC power semiconductor devices by low-temperature sintering of nanoscale silver paste as a novel die-attachment solution. The silver paste was prepared by mixing nanoscale silver particles with carefully selected organic components which can burn out within the low-temperature firing range. SiC Schottky diodes were placed onto stencil-printed layers of the nanoscale silver paste on Au or Ag metallized direct bonded copper (DBC) substrates for the die-attachment. After heating up to 300degC and dwell for 40 min in air to burn out the organic components in the paste and to sinter the nanoscale silver, the paste consolidated into a strong and uniform die-attach bonding layer with purity >99% and density >80%. Then the die-attached SiC devices were cooled down to room temperature and their top terminals were wire-bonded to achieve the high-temperature power packages. Then the power packages were heated up from room temperature to 300degC for high-temperature operation and characterization. Results of the measurement demonstrate the low-temperature silver sintering as an effective die-attach method for high-temperature electronic packaging. An advanced packaging structure for future SiC transistors with several potential advantages was also proposed based on the low-temperature sintering technology. 相似文献
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