Structure and microwave dielectric properties of Sm(2−x)/3Li x TiO3

The structural evolution, and microwave dielectric properties of ceramics (x = 0.0 ≤ x ≤ 0.5) were investigated in this work. X-ray diffraction (XRD) results show that samples with x > 0.3 exhibit a single perovskite phase. Impurity phases of Sm₂Ti₂O₇ and TiO₂ appear and their amount increases with the decrease of x when x ≤ 0.3. TEM observation indicates that the A-site is ordered in x = 0.5, but not in x = 0.3). The dielectric constant decreases with the increase of x for 0.1 ≤ x ≤ 0.4 and then increases with further increase in x up to x = 0.5. The Q×f value decreases with the decrease of x due to the increased occurrence of Sm₂T₂O₇ secondary phase, defects and twinning boundaries. The temperature coefficient of resonant frequency is negative and its absolute value decreases greatly with the decrease of x value.     

Dielectric Properties of Bi4−x La x Ti3O12 (0 ≤ x ≤ 2) Ceramics

The dielectric properties of the Bi_4–x La _x Ti₃O₁₂ (0 x 2) ceramics were characterized and discussed together with the P-E relation (polarization vs. electric field). With increasing x, the P-E relation changed from normal ferroelectric hysteresis loops to pure linear relation, which indicated that La³⁺ substitution for Bi³⁺ in Bi₄Ti₃O₁₂ induced a phase transition from ferroelectric to paraelectric state at ambient temperature. Low loss dielectric ceramics with temperature stable dielectric constant were obtained for x > 1.2 in Bi_4–x La _x Ti₃O₁₂ at 1 MHz. And the loss increased in all the compositions when the ceramics were measured at microwave frequencies.     

Synthesis and Dielectric Characterization of Pyrochlore-Free Pb1−x Ba x (Zn1/3Nb2/3)O3 Ceramics

The dielectric properties and synthesis of pyrochlore-free lead zinc niobate ceramics with Ba substituting for Pb were investigated. Ba partial substitution for Pb was effective in stabilizing the perovskite structure in PZN ceramics, where the minimum amount of Ba substitution needed was about 20 mol%. The dielectric loss and the temperature coefficient of dielectric constant of PZN were reduced markedly with Ba substitution, while the dielectric constant was greater than 110. Good dielectric properties were obtained for the composition of Pb_0.3Ba_0.7(Zn_1/3Nb_2/3)O₃: = 133.5, tan = 0.0009, = –811 ppm/°C.     

Structure and microwave dielectric properties of La(2−x)/3NaxTiO3

The structure evolution, and microwave dielectric properties of La_(2?x)/3Na_xTiO₃ Ceramics( $ x = 0.02 \leqslant \times \leqslant 0.5 $ ) were investigated in this paper. X-ray diffraction (XRD) and scanning electron microscopy (SEM) results show that all samples exhibit single phase. The concentration and ordering degree of A-site vacancies decrease with the increase of x value, and no A-site ordering exists when x?>?0.2. The dielectric constant decreases with the decrease of x value. The Q?×?f value increases up to x?=?0.1 and then decreases with the further increase of x value. A maximum Q?×?f value of 18,826 GHz is obtained when x?=?0.06. The temperature coefficient of resonant frequency exhibits positive value and decreases greatly with the decrease of x value.     

Properties of CaTi1 − x Fe x O3 − δ Ceramic Membranes

CaCO₃, TiO₂ and Fe₂O₃ were mixed in the appropriate stoichiometric quantities and calcined at 1100C for 10 h. These powder mixtures were uniaxially pressed and sintered at temperatures ranging from 1350 to 1500_C for 2 h in order to obtain dense disk-shaped samples with nominal CaTi_{1 – x}Fe_xO_3– (x = 0.05, 0.15, 0.20, 0.40 and 0.60) compositions. Dilatometry and in situ high temperature powder X-ray diffraction analysis showed a good agreement on the thermal expansion behaviour of these materials between room temperature and 1000_C. The estimated linear thermal expansion coefficient is close to 13× 10^{– 6} K^{– 1} and is little affected by composition. No evidence for surface carbonation was detected in the infrared spectra collected on samples previously annealed in CO₂ atmospheres. The oxygen permeability measured at temperatures ranging from 750 to 1000_C goes through a sharp maximum for x = 0.20. This result is interpreted by structural differences related to change from disordered to ordered oxygen vacancies. The overall performance of CaTi_0.80Fe_0.20O_3– is compared to other mixed conducting materials.     

Structural evolution and microwave dielectric properties of (1 − x)BaZn1/3Nb2/3O3 + xBaMg1/2W1/2O3 ceramics

Structural evolution and microwave dielectric properties of (1 − x)BaZn_1/3Nb_2/3O₃ + xBaMg_1/2W_1/2O₃ (0 ≤ x ≤ 1) system have been investigated in this work. All samples exhibit single perovskite phase except for the samples with x = 0 and x ≥ 0.8 in which barium niobate and BaWO₄ second phase existed, respectively. 1:1 cations ordering existed in the samples with x ≥ 0.1, and the ordering degree increases with the increase of x. Liquid phase sintering was observed in the sample with x ≥ 0.8. Dielectric constant decreases almost linearly from 40.8 to 17.4 with increasing x. Q × f value monotonically increases from 26,162 GHz to 64,705 GHz with increasing x. The τ_f value changes from +30 ppm/°C to −27.8ppm/°C. Near zero τ_f value of −1.4 ppm/°C could be obtained at x = 0.4 composition.     

Dielectric relaxation and variable-range-hopping conduction in BaSn1−x Cr x O3 system

The possibility of formation of a solid solution in the system BaSn_1−x Cr _x O₃ has been explored upto x ≤ 0.20. It has been confirmed that single phase solid solution forms upto x ≤ 0.10. Dielectric and conduction behaviour of single phase samples have been studied in the temperature range 400–610 K and frequency range 10 Hz–2 MHz. Two dielectric relaxation processes in two different frequency ranges have been observed. The temperature dependence of both dc and ac resistivity obey relation ρ = ρ _o exp(B/T^1/4), indicative of variable range hopping conduction mechanism. The activation energy for dc conduction is higher than that for relaxation time (τ) of low frequency dielectric relaxation process. It has been observed that activation energy for dielectric relaxation matches with activation energy for ac conductivity (at 100 kHz) for both the dielectric relaxation processes. Seebeck coefficient ‘α’ of the samples have been measured in the temperature range 350–650 K. Negative value of ‘α’ in the entire range of temperature measurement shows that conduction species are negatively charged. On the basis of value of activation energy for dc conduction and sign of Seebeck coefficient, conduction in the low temperature region (below 500 K) is attributed to hopping of weakly bonded electrons among Sn²⁺ ⇔ Sn⁴⁺ or Sn³⁺ ⇔ Sn⁴⁺ and that in the high temperature region (above 500 K) to hopping of doubly ionized oxygen vacancies .     

正极材料Li2+3xFe2(PO4)2+x/C的固相法合成

用固相法合成了非化学计量比正极材料Li2+3xFe2(PO4)2+x/C(x=0、0.05、0.10、0.20、0.30、0.40及1.00).电化学测试结果表明:x =0.05时的样品Li2.15 Fe2 (PO4)2.05/C具有较好的电化学性能,0.1C放电的比容量为158.7 mAh/g;经过65次不同电流的循...     

High-ε Microwave Dielectrics in Pb0.6Ca0.4Zr0.6+x (Fe1/2Nb1/2)0.4−x O3 System

Modification of Pb_0.6Ca_0.4Zr_0.6(Fe_1/2Nb_1/2)_0.4O₃ dielectric ceramics was performed by Zr substitution for (Fe, Nb). The XRD patterns showed that the single phase with orthorhombic distortion unit cell was obtained in the present ceramics. The decreasing dielectric constant by Zr substitution was due to its smaller value of /r ³ _ion. The calculated polarizability was compared with the observed one, and the results showed a good fit, considering the polarizability of oxygen dependent on the V _ox. The Zr substitution on B-site reduced the temperature coefficient of dielectric constant effectively due to the reduced dielectric constant. The effects of tilting transition on the temperature coefficient of dielectric constant were also discussed. The modified microwave dielectric properties were obtained in Pb_0.6Ca_0.4Zr_0.6+x (Fe_1/2Nb_1/2)_0.4–x O₃ for x = 0.3: _r = 100, Q × f = 3,300 to 3,600 GHz, _f = 6–8 ppm/°C.     

Structure and dielectric properties of Bi5−x La x Nb3O15 ceramics

Bi_5?x La _x Nb₃O₁₅ (x?=?0–?1.25) ceramics prepared by conventional solid-state reaction were studied using X-ray diffraction (XRD), electron probe microanalysis (EPMA) and dielectric spectroscopy techniques. The XRD analysis indicated single phase solid solution of Bi_5?x La _x Nb₃O₁₅ is formed for x?≤?1.25. EPMA showed good densification and homogeneous microstructures for the ceramics. With increasing x, the dielectric constant decreases monotonously and can vary from 258 to 158 at 300 kHz. The frequency dependence of dielectric constants indicated these ceramics are promising candidates for high frequency applications.     

Effect of B2O3 Nano-Coating on the Sintering Behaviors and Electrical Microwave Properties of Ba(Nd2 − x Sm x )Ti4O12 Ceramics

Ba(Nd_0.8Sm_0.2)₂Ti₄O₁₂ ceramics prepared by conventional solid-state sintering have a dielectric constant of about 80 and a nearly zero temperature coefficient of resonant frequency; however, the sintering temperature is above 1350_C. Doping with B₂O₃ (up to 5 wt%) promotes the densification and dielectric properties of BNST ceramics. It is found that coating BNST powder with thin B₂O₃ layer of about 180 nm reduces the sintering temperature to below 1020_C. The effects of B₂O₃ nano-coating on the dielectric microwave properties and the microstructures of BNST ceramics are investigated. Ninety-six percent of theoretical densities is obtained for specimens coated with 2 wt% B₂O₃ sintered at 960_C and the samples exhibit significant (002) preferred orientation and columnar structure.     

Evaluation of Chemical Solution Deposited Ba x Sr 1−x TiO 3 Thin Films on LaAlO 3 in Tunable Microwave Devices

Epitaxial Ba x Sr 1 m x TiO 3 (BST) films grown on LaAlO 3 by several deposition methods have been tested in coupled microstrip phase shifters (CMPS) at frequencies from 10 to 24 GHz. To date the best performance for the devices has been achieved using Pulsed Laser Deposition (PLD). However, recently chemical solution deposition (CSD) methods such as sol-gel and Metal-Organic Chemical Liquid Deposition (MOCLD) have shown advances in fabricating BST films for tunable microwave applications. CSD processes promise improvements in cost, speed and area covered during BST film deposition. This paper compares over 35 BST films used in identical CMPS circuits. In this study, the highest measured figures of merit of phase shift per dB of loss for PLD, MOCLD and sol-gel CMPS are 49, 47 and 41°/dB respectively. While other phase shifter designs using BST films have surpassed these values, these data base of identical circuits allows us to compare the BST films. X-ray diffraction characterization for many of the BST films is also given.     

锂离子电池正极材料Li3+xV2(PO4)3-x(SiO4)x(0≤x≤0.3)合成及电化学性能

采用溶胶凝胶结合碳热还原法制备了一种新型锂离子电池正极材料.该材料中,硅酸根取代了磷酸钒锂中的部分磷酸根,得到组成为Li3+xV2(PO4)3-x(SiO4)x(0≤x≤0.3)的材料.采用沥青作为碳源,碳既是还原剂又作为导电剂.比较了x=0,0.05,0.1,0.2,0.3时,材料的库仑效率,容量和循环性能.当x=0...     

Raman Scattering Study of the Pb(Hf x Ti1−x )O3 Ceramics

Raman spectroscopy was used to study the long wavelength vibrations of tetragonal perovskite (space group P4mm) Pb(Hf_xTi_1–x)O₃ (PHT) (0.10 x 0.50) samples at room temperature and at 20 K. For x 0.40, Raman spectra collected from the PHT samples were very similar to the previous spectra collected from the PZT samples with the same value of x, except the mode at around 190 cm^–1, whose frequency was decreasing with increasing x in PHT ceramics. Correspondingly, the latter feature was taken as a sign of the mass effect (Hf versus Zr) while the similarity of the remaining parts of the Raman spectra was assumed to be due to the almost identical ionic radii difference between Ti⁴⁺ and Zr⁴⁺ and between Ti⁴⁺ and Hf⁴⁺ ionic radii. The behaviour of the mode at around 280 cm^–1 revealed that a phase transition occurred once x was changing from 0.40 to 0.50.     

Electrochemical evaluation of La1 − x Ca x CoO3 cathode material for zinc air batteries application

We synthesized nano-sized La_1???x Ca _x CoO₃ (x?=?0.1–0.4) cathode catalysts for zinc air secondary batteries by the citrate method, and measured electrochemical characteristics of the cathodes according to the cathode catalyst’s calcium content. We heat treated the prepared precursor at a calcination temperature of 700°C, and examined it by XRD analysis and electrochemical evaluation. We examined the prepared La_1???x Ca _x CoO₃ catalyst powder’s oxygen reduction reaction (ORR), oxygen evolution reaction (OER) and cycle-stability performance. When we consider ORR, OER and cycle-stability performance simultaneously, La_0.9Ca_0.1MnO₃ catalyst showed the best performance because of its lowest voltage deference between charge and discharge, and its lowest degradation according to cycle.     

Pb(Mg1/3Nb2/3)O3 and (1 − x)Pb(Mg1/3Nb2/3)O3 − xPbTiO3 Relaxor Ferroelectric Thick Films: Processing and Electrical Characterization

The lead magnesium niobate [Pb(Mg_1/3Nb_2/3)O₃ or PMN], and its solid solutions with lead titanate (PbTiO₃ or PT), are of great interest because of their high electromechanical properties. At large PMN content, these materials exhibit relaxor characteristics with large electrostrictive strains and a large permittivity, while compositions near the morphotropic phase boundary present very interesting piezoelectric properties. So far, properties of these materials in ceramic, thin film and single-crystal form have been investigated. In this paper, we report on preparation and properties of pyrochlore free PMN and 0.65PMN-0.35PT thick films (thickness = 10 to 20 m). The films were prepared from ethyl cellulose ink by screen printing on alumina substrate. The influence of various parameters, such as powder characteristics, inks formulation and films sintering conditions, on films densification are discussed. The dielectric and electromechanical properties of the films were examined. Relaxor-like behaviour was clearly demonstrated in PMN films. The maximum relative permittivity for PMN film was 10000 (at 0.1 kHz), which is lower than in bulk ceramics (17800 at 0.1 kHz) prepared under the same conditions. For 0.65PMN-0.35PT, the maximum relative permittivity was around 15500 against 24000 in the bulk. Several parameters, which might be responsible for the lower permittivity, are discussed. Poled 0.65PMN-0.35PT thick films exhibit relatively large piezoelectric response (d ₃₃ up to 200 pm/V) and unipolar strains approaching 0.1%, making these films of interest for various actuator and transducer applications.     

Piezoelectric and Dielectric Properties of Pb(Zr x Ti1 − x )O3-Pb(Ni1/3Sb1/3Nb1/3)O3 Piezoelectric Ceramics

In this paper, piezoelectric and dielectric properties of 0.9PbZr_xTi_1–xO₃-0.1PbNi_1/3Sb_1/3Nb_1/3O₃ were studied as a function of Zr/Ti mole ratio(x) for application to piezoelectric actuator. Also, microstructure and crystalline phase are investigated by using SEM and XRD, respectively. As a results, the substitution of Sb5+ to B-site increases the piezoelectric and dielectric properties, and when Zr/Ti mole ratio is 49/51 and ternary mole ration is 0.1(0.9PbZr_0.49Ti_0.51O₃-0.1PbNi_1/3Sb_1/3Nb_1/3O₃), the corresponding composition were found belonging to the Morphotropic Phase Boundary region with electromechanical coupling coefficient(k_p), mechanical quality factor (Q_m), permittivity(_r) and piezoelectric strain constant(d₃₃) equaled to 63%, 360, 2000 and 470 pC/N, respectively. Sintering temperature was about 1150_C and Curie temperature was determined around 290_C.     

Mg_(0.6)Cu_(0.1)Zn_(0.3)Fe_(2+x)O_(4+3/2x)铁氧体的结构和磁性能

分别采用过铁、正铁和缺铁配方通过固相反应法制备MgCuZn铁氧体,分析了Fe3+对铁氧体的磁性能和烧结特性的影响。微量缺铁有助于促进烧结并改善磁性能,过铁情况下,饱和磁化强度随x值增大迅速下降,在x=0.06处下降至38.84 A·m2/kg,相应的磁导率下降,截止频率向高频移动。并研究了微量V2O5掺杂对改善磁性能的作用,在掺杂量为0.4wt%处获得虚部损耗的有效提升(截止频率处提升近30%)。在此基础上探讨了MgCuZn铁氧体用作抗EMI磁珠的可行性,其低廉的价格相较于传统的Ni Zn/Ni Cu Zn铁氧体具有明显的优势。     

Piezoelectric properties of the high temperature MPB xPbTiO3 - (1−x)[BiScO3 + Bi(Ni1/2Ti1/2)O3] composition

The ternary perovskite xPbTiO₃ - (1?x)[BiScO₃ + Bi(Ni_1/2Ti_1/2)O₃] (PT-BS-BNiT), where x?=?0.54 is the morphotropic phase boundary composition, was studied for high temperature ferroelectric applications. Polycrystalline ceramics were prepared using the standard solid-state methods. The stoichiometric ceramic was found to have room temperature dielectric permittivity and loss values at 1 kHz of 1490 and 0.049 respectively. Piezoelectric properties, of the stoichiometric composition, measured included: P_r?=?31.0 μC/cm², E_c?=?25.0 kV/cm, d₃₃?=?340 pC/N, d₃₃ ^*?=?896 pm/V, and a bipolar electromechanical strain of 0.25 %. From these data, the Curie temperature was T_C?=?370 °C and the depoling temperature was T_D?=?325 °C. Processing ceramics with excess bismuth improved the low field piezoelectric coefficients with a maximum of d33?=?445 pC/N, while increasing the lead content increased the transition temperatures. The depoling and Curie temperatures of all compositions were measured to be between 275 and 400 °C.     

Synthesis and characterizations of the (1 − x)Pb(Sc1/2Nb1/2)O3–xPbTiO3 solid solution ceramics

We report a systematic study of the (1???x)Pb(Sc_1/2Nb_1/2)O₃–xPbTiO₃ (PSN–PT) solid solution in the form of ceramics with compositions at or near the morphotropic phase boundary (MPB) region (0.35?≤?x?≤?0.50). The PSN–PT ceramics have been synthesized by an improved two-step wolframite precursor method. The synthetic process has been optimized in terms of calcining and sintering conditions. Both dielectric permittivity measurements and differential scanning calorimetry (DSC) show a clear peak at T _C, at which the transition from the paraelectric to ferroelectric phase takes place. Interestingly, the solid solution of the MPB compositions displays a T _C?>?200 °C, i.e. higher than the T _C of the Pb(Mg_1/3Nb_2/3)O₃–PbTiO₃ and Pb(Zn_1/3Nb_2/3)O₃–PbTiO₃ solid solutions, making the PSN–PT system very promising piezoelectric and ferroelectric materials for high-temperature applications. A dielectric maximum as high as 50,000 is obtained for the 0.65PSN–0.35PT ceramic with losses smaller than 0.05. The values of the remnant polarization and the strain level of the PSN–PT ceramics are comparable to those of the PZT ceramics.