Photoluminescence characteristics of Y3Al5O12:Tb3+ phosphors synthesized using the combustion method

For this study, terbium-doped yttrium aluminum garnet (YAG:Tb) phosphor powders were prepared via the combustion process using the 1:1 ratio of metal ions to reagents. The characteristics of the synthesized nano powder were investigated by means of X-ray diffraction (XRD), scanning electron microscope (SEM), and photoluminescence. Single-phase cubic YAG:Tb crystalline powder was obtained at 800 °C by directly crystallizing it from amorphous materials, as determined by XRD techniques. There were no intermediate phases such as yttrium aluminum perovskite (YAlO₃) and yttrium aluminum monoclinic (Y₄Al₂O₉) observed in the sintering process. The SEM image showed that the resulting YAG:Tb powders had uniform sizes and good homogeneity. With the increase in the sintering temperature, the grain size increased. The photoluminescence spectra of the YAG:Tb nanoparticles were investigated to determine the energy level of electron transition related to luminescence processes. There were three peaks in the excited spectrum, and the major one was a broad band of around 274 nm. Also, the YAG:Tb nanoparticles showed two emission peaks in the range of 450?×?500 and 525?×?560 nm, respectively, and had maximum intensity at 545 nm.     

Luminescent properties of Sr2ZnSi2O7: Eu2+ phosphors prepared by combustion-assisted synthesis method

A blue-emitting phosphor Sr₂ZnSi₂O₇: Eu²⁺ was prepared by combustion-assisted synthesis method and an efficient blue emission under from ultraviolet to visible light was observed. The emission spectrum shows a single intensive band centered at 475?nm, which corresponds to the 4f⁶5d¹??4f⁷ transitions of Eu²⁺. The excitation spectrum is a broad band extending from 250 to 450?nm, which matches the emission of ultraviolet light-emitting diodes (UV-LEDs). The effect of doped Eu²⁺ concentration on the emission intensity of Sr₂ZnSi₂O₇: Eu²⁺ was also investigated and the corresponding concentration quenching mechanism is verified to be an electric multipole-multipole interaction.     

Fabrication of amorphous bulk and multi-phase ceramics by melting method in the HfO2-Al2O3-Gd2O3-Eu2O3system

Ceramics have generally been fabricated from powders by shape forming & sintering methods except for glasses and glass ceramics. Glasses and glass ceramics can be fabricated by melting methods. The melting method has not only higher productivity but also higher shape forming ability than powder processes via forming & sintering methods. Thus we have reinvestigated melting methods in binary and ternary oxides systems to fabricate amorphous bulk ceramics and bulk nano composites. We have successfully fabricated amorphous phases by simple melt solidification methods in ternary eutectic melts in the HfO₂-Al₂O₃-Gd₂O₃system. The present study demonstrates the formation of the amorphous phases in quaternary systems HfO₂-Al₂O₃-Gd₂O₃-Eu₂O₃. Furthermore, we have also succeeded to fabricate nano-structured bulk ceramics, which consisted of constituent oxide grains with 20–100 nm in size, by post annealing of the amorphous phase.     

Preparation of Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films by MOCVD using ultrasonic nebulization

Thin films of Pb(Mg_1/3,Nb_2/3)O₃ (PMN) and Pb(Mg_1/3,Nb_2/3)O₃-PbTiO₃ (PMN-PT) were fabricated on Si and Pt/Ti/SiO₂/Si substrates by MOCVD using ultrasonic nebulization and their characteristics were investigated. PMN-PT films deposited at 350^∘C were annealed in a RTA (Rapid Thermal Annealing) system at 650^∘C for 30 sec to improve the micostructural properties. The crystallographic properties of PMN-PT films strongly depend on the content ratio of PbTiO₃. The content of pyrochlore phase in PMN-PT films decreased with the increase of Ti content and nearly single phase perovskite films were obtained at the composition of 80PMN-20PT. The PMN-PT films with perovskite phase showed a typical butterfly type C-V curve which verifies the ferroelectricity and had the relative dielectric constant of about 60.     

Morphology and luminescence properties of BaMgAl10O17:Eu2+ blue phosphors by Aerosol Flame Deposition

BaMgAl₁₀O₁₇:Eu²⁺ (BAM:Eu) is widely used as a blue phosphor for fluorescent lamps and plasma display panels (PDP). The improvement of the luminescence efficiency is a significant issue for applications in plasma display panels. In this study, the Aerosol Flame Deposition (AFD) was applied to fabricate BaMgAl₁₀O₁₇:Eu²⁺ (BAM:Eu) particles with spherical shape and fine size in order to improve their luminescence. The sub-micrometer powder was synthesized in spherical shape in an oxy-hydrogen flame and deposited on a substrate in the form of porous film. The particle size of as-prepared powder increased with increasing the concentration of precursor solution and the heat treatment under reducing atmosphere increased particle size additionally with surface roughening due to the needle-like crystallized phases. Photoluminescence spectrum was observed at about 450nm due to the 5d–4f transition of Eu²⁺ and the intensity of phosphor was as high as 70% of that of the commercial phosphor.     

以Fe2O3为铁源制备LiFePO4/C及其电化学性能

以Fe2O3和LiH2PO4为原料,聚丙烯为还原剂和碳源,采用一步固相法制备了LiFePO4/C复合正极材料,研究了不同温度对合成材料电化学性能的影响。利用X射线衍射(XRD)、扫描电子显微镜(SEM)等测试手段对合成材料进行了表征,通过恒电流充放电测试研究了材料的电化学性能。结果表明:于700℃下制备的LiFePO4/C复合材料在0.1、1、5C倍率下的首次放电比容量分别为160.4、143.0、108.3 mAh/g。在1 C和5 C经100次循环后,放电比容量分别为138.5 mAh/g和100.2 mAh/g,表现出良好的高倍率循环性能。     

Processing and properties of nanocrystalline Pb(Sc0.5Ta0.5)O3, Pb(Sc0.5nb0.5)O3 and Pb(Mg1/3Nb2/3)O3 films produced by RF-sputtering from ceramic targets

Abstract

Nanocrystalline thin films of different relaxor materials, namely Pb(Sc_0.5Ta_0.5)O₃ (PST), Pb(Sc_0.5Nb_0.5)O₃(PSN), Pb(Mg_1/3Nb_2/3)O₃(PMN) have been produced by RF-sputtering to investigate whether it will affect their dielectric properties if their grain size is reduced to the dimensions known from their nanodomains. The XRD shows that the amorphous film crystallizes in pyrochlore structure at lower temperatures and short times. Annealing at higher temperatures and far longer time intervals leads to an increasing amount of perovskite phase with a grain size in the nanometer range. These results including dielectric measurements will be presented and discussed.     

Al~(3+)掺杂立方相Li_7La_3Zr_2O_(12)的制备及性能表征

采用一种柠檬酸辅助聚合的溶胶-凝胶法制备了掺杂2%(摩尔分数)Al3+的立方相结构的Li7La3Zr2O12固体电解质,同时,采用高温固相法尝试合成不掺杂Al3+的Li7La3Zr2O12作为对比。分析结果表明:热处理温度超过1 000℃时Li7La3Zr2O12易发生分解;而掺杂2%(摩尔分数)Al3+的Li7La3Zr2O12能在900℃时保持稳定立方相结构,在1 000℃下烧结6 h后得到高致密度的烧结体。该法制备的Li7La3Zr2O12样品表现出高离子电导率:298 K时为4.5×10-5 S/cm,523K时达到3.6×10-3 S/cm。Li+迁移活化能大约为25.1 k J/mol。上述结果表明,作为全固态电池电解质,Al3+掺杂的Li7La3Zr2O12有较好的应用前景。     

Preparation of lithium-ion polymer battery using LiNi1/3Co1/3Mn1/3O2 as a cathode material and its electrochemical properties

In this work, LiNi_1/3Mn_1/3Co_1/3O₂ powders were synthesized from co-precipitated spherical metal hydroxide. In the voltage range of 2.8–4.2, 2.8–4.4, and 2.8–4.6 V, the discharge capacities of LiNi_1/3Mn_1/3Co_1/3O₂ electrode were 163, 177, and 193 mAh⋅g⁻¹, respectively. A gel polymer electrolyte (GPE) was also prepared using polyoxyalkylene glycol acrylate (POAGA) as a macromonomer. LiNi_1/3Mn_1/3Co_1/3O₂/GPE/graphite cells were prepared and their electrochemical properties were evaluated at various current densities and temperatures. The ionic conductivity of the GPE was more than 6.2 × 10⁻³ S⋅cm⁻¹ at room temperature. POAGA-based cells were showed good electrochemical performances such as rate capability, low-temperature performance, and cycleability.     

红色荧光粉LiW_2O_8:Eu的制备及其发光性质

采用高温固相反应法制备了Li(4-3x)W2O8:Eux系列钨酸盐红色荧光粉,探讨了其合成工艺条件,确定了Eu3+的最佳含量为x=1,试样的最佳反应温度为850℃。该荧光粉具有较宽的激发光谱,适合与近紫外、蓝光芯片配合使用。其发射光谱主峰位于615nm,色坐标位于(X=0.666,Y=0.331)左右,具有较高的色纯度。因此,这种荧光粉是一种可能应用在白光LED上的红色荧光粉材料。     

Preparation of Pb(Ti,Zr)O3/RuO2 multilayers in situ by pulsed laser ablation deposition

Abstract

RuO₂/PbZr_0.52Ti_0.48O₃ multilayers have been prepared by pulsed laser deposition and characterised by Grazing Incident Angle Bragg Diffraction and scanning electron microscopy. The results are correlated with the different deposition conditions and post-growth thermal annealing. The structure of the paraelectric pyrochlore phase (Pb₂(Zr,Ti)₂O₆) and its stability relative to the ferroelectric perovskite is discussed.     

Structural,electronic, and optical properties of C-type $$\hbox {Gd}_{2}\hbox {O}_{3}$$: a density functional theory investigation

Recently, \(\hbox {Gd}_{2}\hbox {O}_{3}\) has gained considerable interest in industry, and its optical applications have been of interest in optoelectronic. The band structure and optical properties of cubic \(\hbox {Gd}_{2}\hbox {O}_{3}\) are investigated using the density functional theory framework. Calculations are performed within the local density approximation and generalized gradient approximation, adding the empirical Hubbard potential U. Calculation of the electronic band structure indicates a direct \({\Gamma }\) band gap. Further, the total and partial densities of states were presented, and the contribution of different orbitals is analyzed. Moreover, the behavior of optical spectra such as real and imaginary part of dielectric function, refractive index, extinction coefficient, optical conductivity, and electron energy-loss function is analyzed. There is a good agreement between the computed results and reported experimental data.     

草酸盐共沉淀法制备层状LiNi1/3Co1/3-xLaxMn1/3O2正极材料

采用草酸盐共沉淀法制备了锂离子电池用稀土元素镧掺杂层状正极材料LiNi1/3Co1/3-xLaxMn1/3O2(0x1),考察了镧掺杂对其结构与电化学性能的影响。XRD与电化学性能测试结果表明,层状正极材料LiNi1/3Co1/3-0.04La0.04Mn1/3O2具有较好的层状结构和综合电化学性能。表征阳离子的混排程度的峰强比I(003)/I(104)=1.2491.2,表示六角晶格的有序性的R因子R=0.5。在2.8～4.2 V(vs.Li/Li+)电压范围,0.1 C倍率的首次放电比容量为147.56 mAh/g,首次充放电效率为94%,0.2 C倍率循环20次后继续以0.5 C倍率循环20次的可逆比容量为141.7 mAh/g,为首次放电比容量的96.0%。SEM结果表明,颗粒平均粒径约1.2 mm,形状近似于球形。     

Preparation and electrical properties of 0.4Pb(Zn1/3Nb2/3)O3-0.6Pb(Zr0.4Ti0.6)O3 thin films by 2-step annealing method

Films of (1−x)Pb(Zn_1/3Nb_2/3)O₃-xPb(Zr_0.4Ti_0.6) O₃ (x = 0.6, 40PZN-60PZT) were deposited on Pt/TiO₂/ SiO₂/Si substrate through spin coating. Using a combination of homogeneous precursor solution preparation and two-step pyrolysis process, we were able to obtain the 40PZN-60PZT thin films of perovskite phase virtually without pyrochlore phase precipitation after annealing above 650^∘C. But since annealing done at the high temperatures for extended time can cause diffusion of Pt, TiO₂ and Si, and precipitation of nonstoichiometric PbO, we adopted 2-step annealing method to circumvent these problems. The 2-step annealed films show dense microstructure than the 1-step films annealed at higher temperature. Furthermore, the root-mean-square surface roughness of 220 nm thick films which are annealed at 720^∘C for 1 min and then annealed at 650^∘C for 5 min was found to be 3.9 nm by atomic force microscopy as compared to the 12 nm surface roughness of the film annealed only at 720^∘C for 5 min. The electrical properties of 2-step annealed films are virtually same and those of the 1-step annealed films annealed at high temperature. The film 2-step annealed at 720^∘C for brief 1 min and with subsequent annealing at 650^∘C for 5 min showed a saturated hysteresis loop at an applied voltage of 5 V with remanent polarization (P _r) and coercive voltage (V _c) of 25.3 μC/cm² and 0.66 V respectively. The leakage current density was lower than 10⁻⁵A/cm² at an applied voltage of 5 V.     

Preparation of Pb(Zr,Ti)O3 Thin Films on Silica Substrate by Metallo-Organic Decomposition

In this study, we report the deposition of crack-free transparent PZT films (up to ～859 nm) by metallo-organic decomposition (MOD) process on amorphous silica substrate. Effect of SrTiO₃ (STO) buffer layer on the growth behavior of PZT thin films deposited on SiO₂-coated silicon substrates was systematically studied. Perovskite phase, which cannot be formed directly on SiO₂/Si substrates, has been obtained when a thin STO film (～150 nm) was used as buffer layer. A SIMS examination indicates that the upward diffusion of Si-species into PZT layer is minimal, although downward diffusion of Pb-species into the SiO₂ layer is still observable.     

Preparation of (PbxBa1-x)TiO3 thin films by MOCVD using an aerosol-assisted liquid delivery system

Abstract

Thin films of PbTiO₃, BaTiO₃ and (Pb_xBa_1-x)TiO₃ (PBT) have been prepared by metal-organic chemical vapor deposition using a horizontal reactor with an aerosol-assisted liquid delivery system. Structural and electrical properties have been investigated as a function of the lead content x. First results on PBT thin films grown on platinized silicon substrates show, for x < 0.8, an increasing tetragonal distortion of the lattice cell (c/a >1), and accompanying ferroelectric behavior which is similar to the bulk material. For smaller lead content (x < 0.8) no ferroelectric behavior is established and a small tetragonal distortion of opposite type (c/a <1) is observed. This distortion is attributed to a thermally induced tensile film stress and may be responsible for the suppression of the ferroelectric phase transition.     

Synthesis and characterization of Eu doped Y2O3 particles by a glycothermal processing

Eu doped Y₂O₃ particles were prepared under high temperature and pressure conditions by precipitation from metal nitrates with aqueous potassium hydroxide. The Eu doped Y₂O₃ particles were obtained at 270°C. The average particle size of synthesized powders was below 1 um. The X-ray diffraction pattern shows that the synthesized particles were crystalline. This study has shown that the synthesis of Eu doped Y₂O₃ crystalline particles is possible under glycothermal conditions in ethylene glycol solution. The effects of synthesis parameters, such as the concentration of starting solution, pH of starting solution, reaction temperature and time, are discussed.     

Preparation of SrBi2(Ta,Nb)2O9 thin films by rf sputtering for ferroelectric memory production

Abstract

Ferroelectric SrBi₂(Ta, Nb)₂O₉ (SBTN) thin films were prepared by rf magnetron sputtering utilizing a multi-chamber type production tool (ULVAC CERAUS ZX1000). Accurate and dynamic compositional control results in excellent ferroelectric performances such as large 2Pr up to 15μC/cm², fatigue free at least 10⁹ cycles as well as good uniformity and process repeatability. These results indicate that the SBTN sputtering process is promising for ferroelectric memory production.     

Preparation of Bulk Pb(Zr, Ti)O3 with Crystallographic Texture by Templated Grain Growth Method

Polycrystalline Pb(Zr, Ti)O₃ (PZT) ceramics with 111-texture were prepared by the templated grain growth (TGG) method using the platelike Ba₆Ti₁₇O₄₀ (B6T17) particles as templates. Textured PZT was obtained by sintering of green compacts containing matrix PZT, aligned B6T17, and excess PbO. Excess PbO formed a liquid phase and promoted the dissolution of PZT grains and the precipitation on B6T17 grains. A similarity of the arrangement of ions on (001) of B6T17 and (111) of PZT gave 111-texture to matrix PZT.