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1.
This paper addresses the problem of robust \(L_2{-}L_\infty \) control in delta domain for a class of Takagi–Sugeno (TS) fuzzy systems with interval time-varying delays and disturbance input. In particular, the system under study involves state time delay, uncertainties and fast sampling period \(\mathcal {T}\). The main aim of this work was to design a \(L_2{-}L_\infty \) controller such that the proposed TS fuzzy system is robustly asymptotically stable with a \(L_2{-}L_\infty \) prescribed performance level \(\gamma >0\). Based on the proper Lyapunov–Krasovskii functional (LKF) involving lower and upper bound of time delay and free-weighting technique, a new set of delay-dependent sufficient conditions in terms of linear matrix inequalities (LMIs) are established for obtaining the required result. The result reveals that the asymptotic stability is achieved quickly when the sampling frequency is high. Finally, a numerical example based on the truck–trailer model is given to demonstrate the effectiveness and potential of the proposed design technique.  相似文献   

2.
In this work, two-channel perfect reconstruction quadrature mirror filter (QMF) bank has been proposed based on the prototype filter using windowing method. A novel window function based on logarithmic function along with the spline function is utilized for the design of prototype filter. The proposed window has a variable parameter ‘\(\alpha \)’, which varies the peak side lobe level and rate of fall-off side lobe level which in turn affects the peak reconstruction error (PRE) and amplitude distortion (\(e_{am}\)) of the QMF bank . The transition width of the prototype is controlled by the spline function using the parameter ‘\(\mu \)’. The perfect reconstruction condition is satisfied by setting the cutoff frequency (\(\omega _{c}\)) of the prototype low-pass filter at ‘\(\pi /2\)’. The performance of the proposed design method has been evaluated in terms of mean square error in the pass band, mean square error in the stop band, first side lobe attenuation (\(A_{1}\)), peak reconstruction error (PRE) and amplitude error (\(e_{am}\)) for different values of ‘\(\alpha \)’ and ‘\(\mu \)’. The results are provided and compared with the existing methods.  相似文献   

3.
Sparse adaptive filtering algorithms are utilized to exploit system sparsity as well as to mitigate interferences in many applications such as channel estimation and system identification. In order to improve the robustness of the sparse adaptive filtering, a novel adaptive filter is developed in this work by incorporating a correntropy-induced metric (CIM) constraint into the least logarithmic absolute difference (LLAD) algorithm. The CIM as an \(l_{0}\)-norm approximation exerts a zero attraction, and hence, the LLAD algorithm performs well with robustness against impulsive noises. Numerical simulation results show that the proposed algorithm may achieve much better performance than other robust and sparse adaptive filtering algorithms such as the least mean p-power algorithm with \(l_{1}\)-norm or reweighted \(l_{1}\)-norm constraints.  相似文献   

4.
The electronic and optical properties of armchair MoS\(_{2}\) nanoribbons with multiple stacking faults are investigated using first-principles calculations. It’s interesting that the band gaps approach zero for armchair MoS\(_{2}\) nanoribbons with two and four stacking faults. The gaps of armchair MoS\(_{2}\) nanoribbons with one stacking fault and three stacking faults are converged to 0.46 eV and 0.36 eV, respectively, which is smaller than perfect MoS\(_{2}\) nanoribbons. The partial charge density of armchair MoS\(_{2}\) nanoribbons with two stacking faults shows that the defect levels are originated from stacking faults. The frequency-dependent optical response (dielectric function, absorption, reflectance and electron energy loss spectra) is also presented. The optical results of monolayer MoS\(_{2}\) are in agreement with previous study. The peaks in the imaginary part of perfect armchair MoS\(_{2}\) nanoribbons are about 2.8 eV, 4.0 eV and 5.4 eV and the peaks of the imaginary part of armchair MoS\(_{2}\) nanoribbons with stacking faults are mainly 2.8 eV and 5.4 eV. They are independent of ribbon width. The peaks in electron energy loss spectra move toward larger wavelengths (redshift) due to the introduction of stacking faults.  相似文献   

5.
In this work, we present a self cascode based ultra-wide band (UWB) low noise amplifier (LNA) with improved bandwidth and gain for 3.1–10.6 GHz wireless applications. The self cascode (SC) or split-length compensation technique is employed to improve the bandwidth and gain of the proposed LNA. The improvement in the bandwidth of SC based structure is around 1.22 GHz as compared to simple one. The significant enhancement in the characteristics of the introduced circuit is found without extra passive components. The SC based CS–CG structure in the proposed LNA uses the same DC current for operating first stage transistors. In the designed UWB LNA, a common source (CS) stage is used in the second stage to enhance the overall gain in the high frequency regime. With a standard 90 nm CMOS technology, the presented UWB LNA results in a gain \(\hbox {S}_{21}\) of \(20.10 \pm 1.65\,\hbox {dB}\) across the 3.1–10.6 GHz frequency range, and dissipating 11.52 mW power from a 1 V supply voltage. However, input reflection, \(\hbox {S}_{11}\), lies below \(-\,10\) dB from 4.9–9.1 GHz frequency. Moreover, the output reflection (\(\hbox {S}_{22}\)) and reverse isolation (\(\hbox {S}_{12}\)), is below \(-\,10\) and \(-\,48\) dB, respectively for the ultra-wide band region. Apart from this, the minimum noise figure (\(\hbox {NF}_{min}\)) value of the proposed UWB LNA exists in the range of 2.1–3 dB for 3.1–10.6 GHz frequency range with a a small variation of \(\pm \,0.45\,\hbox {dB}\) in its \(\hbox {NF}_{min}\) characteristics. Linearity of the designed LNA is analysed in terms of third order input intercept point (IIP3) whose value is \(-\,4.22\) dBm, when a two tone signal is applied at 6 GHz with a spacing of 10 MHz. The other important benefits of the proposed circuit are its group-delay variation and gain variation of \(\pm \,115\,\hbox {ps}\) and \(\pm \,1.65\,\hbox {dB}\), respectively.  相似文献   

6.
The problem of permanent fault diagnosis has been discussed widely, and the diagnosability of many well-known networks have been explored. Faults of a multiprocessor system generally include permanent and intermittent, with intermittent faults regarded as the most challenging to diagnose. In this paper, we investigate the intermittent fault diagnosability of hyper Petersen networks. First, we derive that an \(n\)-dimensional hyper Petersen network \(HP_{n}\) with fault-free edges is \((n - 1)_{i}\)-diagnosable under the PMC model. Then, we investigate the intermittent fault diagnosability of \(HP_{n}\) with faulty edges under the PMC model. Finally, we prove that an \(n\)-dimensional hyper Petersen network \(HP_{n}\) is \((n - 2)_{i}\)-diagnosable under the MM* model.  相似文献   

7.
This paper presents a capacitor-free low dropout (LDO) linear regulator based on a dual loop topology. The regulator utilizes two feedback loops to satisfy the challenges of hearing aid devices, which include fast transient performance and small voltage spikes under rapid load-current changes. The proposed design works without the need of a decoupling capacitor connected at the output and operates with a 0–100 pF capacitive load. The design has been taped out in a \(0.18\,\upmu \hbox {m}\) CMOS process. The proposed regulator has a low component count, area of \(0.012\, \hbox {mm}^2\) and is suitable for system-on-chip integration. It regulates the output voltage at 0.9 V from a 1.0–1.4 V supply. The measured results for a current step load from 250 to 500 \(\upmu \hbox {A}\) with a rise and fall time of \(1.5\,\upmu \hbox {s}\) are an overshoot of 26 mV and undershoot of 26 mV with a settling time of \(3.5\,\upmu \hbox {s}\) when \({C_L}\) between 0 and 100 pF. The proposed LDO regulator consumes a quiescent current of only \(10.5\,\upmu \hbox {A}\). The design is suitable for application with a current step edge time of 1 ns while maintaining \(\Delta V_{out}\) of 64 mV.  相似文献   

8.
Differential thermal analysis (DTA) has been conducted on directionally solidified near-eutectic Sn-3.0 wt.%Ag-0.5 wt.%Cu (SAC), SAC \(+\) 0.2 wt.%Sb, SAC \(+\) 0.2 wt.%Mn, and SAC \(+\) 0.2 wt.%Zn. Laser ablation inductively coupled plasma mass spectroscopy was used to study element partitioning behavior and estimate DTA sample compositions. Mn and Zn additives reduced the undercooling of SAC from 20.4\(^\circ \hbox {C}\) to \(4.9^\circ \hbox {C}\) and \(2^\circ \hbox {C}\), respectively. Measurements were performed at cooling rate of \(10^\circ \hbox {C}\) per minute. After introducing 200 ppm \(\hbox {O}_2\) into the DTA, this undercooling reduction ceased for SAC \(+\) Mn but persisted for SAC \(+\) Zn.  相似文献   

9.
10.
The results of an ab?initio modelling of aluminium substitutional impurity (\({\hbox {Al}}_{\rm Ge}\)), aluminium interstitial in Ge [\({\hbox {I}}_{\rm Al}\) for the tetrahedral (T) and hexagonal (H) configurations] and aluminium interstitial-substitutional pairs in Ge (\({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\)) are presented. For all calculations, the hybrid functional of Heyd, Scuseria, and Ernzerhof in the framework of density functional theory was used. Defects formation energies, charge state transition levels and minimum energy configurations of the \({\hbox {Al}}_{\rm Ge}\), \({\hbox {I}}_{\rm Al}\) and \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) were obtained for ?2, ?1, 0, \(+\)1 and \(+\)2 charge states. The calculated formation energy shows that for the neutral charge state, the \({\hbox {I}}_{\rm Al}\) is energetically more favourable in the T than the H configuration. The \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) forms with formation energies of ?2.37 eV and ?2.32 eV, when the interstitial atom is at the T and H sites, respectively. The \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) is energetically more favourable when the interstitial atom is at the T site with a binding energy of 0.8 eV. The \({\hbox {I}}_{\rm Al}\) in the T configuration, induced a deep donor (\(+\)2/\(+1\)) level at \(E_{\mathrm {V}}+0.23\) eV and the \({\hbox {Al}}_{\rm Ge}\) induced a single acceptor level (0/?1) at \(E_{\mathrm {V}}+0.14\) eV in the band gap of Ge. The \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) induced double-donor levels are at \(E_{\rm V}+0.06\) and \(E_{\rm V}+0.12\) eV, when the interstitial atom is at the T and H sites, respectively. The \({\hbox {I}}_{\rm Al}\) and \({\hbox {I}}_{\rm Al}{\hbox {Al}}_{\rm Ge}\) exhibit properties of charge state-controlled metastability.  相似文献   

11.
The sparsity adaptive matching pursuit (SAMP) algorithm has an advantage of reconstructing signals without the prior information of the sparsity level. However, the required computational power is high and the reconstruction performance is not satisfied for perturbed systems. This is because this algorithm is based on the expectation maximization algorithm. Also, a pseudo-inverse operation of the matrix is employed to select the element candidates of the sensing matrix in each iteration. In this paper, a mixed \(L_{1}\) norm and \(L_{2}\) norm regularized algorithm is proposed to address these issues. Similar to the SAMP algorithm, the regularized algorithm also reconstructs the signals without the prior information of the sparsity level. Different from the SAMP algorithm, the element candidates of the sensing matrix are selected by the \(L_{2}\) norm strategy in each iteration. Experiments are performed on an ideal simulation system, a perturbed simulation system and real image reconstruction. Simulation and real image reconstruction experimental results indicate that the regularized algorithm has lower computational power than the SAMP algorithm. Also, the proposed algorithm has better reconstruction performance on the perturbed system compared to the SAMP algorithm.  相似文献   

12.
In this paper, we first present an enhancement of the well-known Karatsuba 2-way and 3-way algorithms for characteristic three fields, denoted by \(\mathbb {F}_{3^{n}}\) where n≥1. We then derive a 3-way polynomial multiplication algorithm with five 1/3 sized multiplications that use interpolation in \(\mathbb {F}_{9}\). Following the computation of the arithmetic and delay complexity of the proposed algorithm, we provide the results of our hardware implementation of polynomial multiplications over \(\mathbb {F}_{3}\) and \(\mathbb {F}_{9}\). The final proposal is a new 3-way polynomial multiplication algorithm over \(\mathbb {F}_{3}\) that uses three polynomial multiplications of 1/3 of the original size over \(\mathbb {F}_{3}\) and one polynomial multiplication of 1/3 of the original size over \(\mathbb {F}_{9}\). We show that this algorithm represents about 15% reduction of the complexity over previous algorithms for the polynomial multiplications whose sizes are of practical interest.  相似文献   

13.
A low voltage self-biased high-swing cascode current mirror using bulk-driven quasi-floating gate MOSFET is proposed in this paper. The proposed current mirror bandwidth and especially the output impedance show a significant improvement compared to prior arts. The current mirror presented is designed using bulk-driven and bulk-driven quasi-floating gate N-channel MOS transistors, which helped it to operate at very low supply voltage of \({\pm }0.2\,\hbox {V}\). To achieve high output resistance, the current mirror uses regulated cascode stage followed by super cascode architecture. The small-signal analysis carried out proves the improvement achieved by proposed current mirror. The current mirror circuit operates well for input current ranging from 0 to \(250\,{\upmu }\mathrm{A}\) with good linearity and shows the bandwidth of 285 MHz. The input and output resistances are found as \(240\,\Omega \) and \(19.5\,\hbox {G}\Omega \), respectively. Further, the THD analysis and Monte Carlo simulations carried prove the robustness of proposed current mirror. The complete analysis is done using HSpice on UMC \(0.18\,\upmu \mathrm{m}\) technology.  相似文献   

14.
In this paper a novel high-frequency fully differential pure current mode current operational amplifier (COA) is proposed that is, to the authors’ knowledge, the first pure MOSFET Current Mode Logic (MCML) COA in the world, so far. Doing fully current mode signal processing and avoiding high impedance nodes in the signal path grant the proposed COA such outstanding properties as high current gain, broad bandwidth, and low voltage and low-power consumption. The principle operation of the block is discussed and its outstanding properties are verified by HSPICE simulations using TSMC \(0.18\,\upmu \hbox {m}\) CMOS technology parameters. Pre-layout and Post-layout both plus Monte Carlo simulations are performed under supply voltages of \(\pm 0.75\,\hbox {V}\) to investigate its robust performance at the presence of fabrication non-idealities. The pre-layout plus Monte Carlo results are as; 93 dB current gain, \(8.2\,\hbox {MHz}\,\, f_{-3\,\text {dB}}, 89^{\circ }\) phase margin, 137 dB CMRR, 13 \(\Omega \) input impedance, \(89\,\hbox {M}\Omega \) output impedance and 1.37 mW consumed power. Also post-layout plus Monte Carlo simulation results (that are generally believed to be as reliable and practical as are measuring ones) are extracted that favorably show(in abovementioned order of pre-layout) 88 dB current gain, \(6.9\,\hbox {MHz} f_{-3\text {db}} , 131^{\circ }\) phase margin and 96 dB CMRR, \(22\,\Omega \) input impedance, \(33\,\hbox {M}\Omega \) output impedance and only 1.43 mW consumed power. These results altogether prove both excellent quality and well resistance of the proposed COA against technology and fabrication non-idealities.  相似文献   

15.
This paper proposes a feedback time difference amplifier (FTDA) that achieves linear, controllable gain and changeable input range for different time difference gains. The proposed FTDA consists of two identical feedback output generators. The feedback output generator achieves a linear input–output transfer characteristic by employing two p-type keepers for time gain feedback control. Its validity was demonstrated using \({0.13}\, {\upmu \hbox {m}}\) SiGe BiCMOS process. The power consumption is \(91.54 \,{\upmu \hbox {W}}\) for the highest gain with input signals at \({2}\,\hbox {MHz}\). The gain can be controlled from 25.06 to \(734.9\,{\hbox {s/s}}\) within \(40 \,\hbox {ps}\) input time interval.  相似文献   

16.
In this paper, we demonstrate new dissimilar refractive index profiles for highly nonlinear ultra-flattened dispersion fibers with noteworthy effective area \((A_\mathrm{eff})\) for future optical signal processing. The newly proposed fibers named from Type 1 to Type 5 have a flattened dispersion over S, C, L and U bands. Predominantly, few-mode HNL-UFF fiber of Type 3 yields dispersion-flattened characteristics over a range of 250 nm of optical communication spectrum with a mere 0.2 ps/nm km variation in dispersion and a dispersion slope of \(0.0057\hbox { ps}/\hbox {nm}^{2}\) km due to the contribution of higher-order modes to the dispersion characteristics of the fiber. Moreover, it has a moderate nonlinear coefficient of \(8.03\hbox { W}^{-1}\,\hbox {km}^{-1}\). By modifying the refractive index profile of Type 3 fiber, Type 4 and Type 5 fibers are obtained in order to ensure single-mode operation, while the zero flattened dispersion characteristics of the fiber are compromised. Among the newly proposed fibers, Type 4 fiber offers a very low ITU-T cutoff wavelength of \(1.33~\upmu \hbox {m}\), whereas in the case of Type 5 fiber it is \(1.38~\upmu \hbox {m}\). Moreover, Type 4 and Type 5 fibers have good nonlinear coefficients of \(12.26\hbox { W}^{-1}\,\hbox {km}^{-1}\) and \(11.45\hbox { W}^{-1}\,\hbox {km}^{-1}\), respectively. By virtue of the proposed optimized index profile, an insensitive behavior toward bending is displayed by Type 3, Type 4 and Type 5 fibers. In addition, Type 4 fiber provides a better splice loss of 0.25 dB.  相似文献   

17.
The electrochemical, structural and magnetic properties of CoCu/Cu multilayers electrodeposited at different cathode potentials were investigated from a single bath. The Cu layer deposition potentials were selected as \(-\,0.3,\,\hbox {V}\) \(-\,0.4\,\,\hbox {V}\), and \(-\,0.5\,\hbox {V}\) with respect to saturated calomel electrode (SCE) while the Co layer deposition potential was constant at \(-\,1.5\,\hbox {V}\) versus SCE. For the electrochemical analysis, the current-time transients were obtained. The amount of noble non-magnetic (Cu) metal materials decreased with the increase of deposition potentials due to anomalous codeposition. Further, current-time transient curves for the Co layer deposition and capacitance were calculated. In the structural analysis, the multilayers were found to be polycrystalline with both Co and Cu layers adopting the face-centered cubic structure. The (111) peak shifts towards higher angle with the increase of the deposition potentials. Also, the lattice parameters of the multilayers decrease from 0.3669 nm to 0.3610 nm with the increase of the deposition potentials from \(-\,0.3\,\hbox {V}\) to \(-\,0.5\,\hbox {V}\), which corresponds to the bulk values of Cu and Co, respectively. The electrochemical and structural results demonstrate that the amount of Co atoms increased and the Cu atoms decreased in the layers with the increase of deposition potentials due to anomalous codeposition. For magnetic measurements, the saturation magnetizations, \(M_s\) obtained from the magnetic curves of the multilayers were obtained as 212 kA/m, 276 kA/m, and 366 kA/m with \(-\,0.3\,\hbox {V}\), \(-\,0.4\,\hbox {V}\), and \(-\,0.5\,\hbox {V}\) versus SCE, respectively. It is seen that the \(M_s\) values increased with the increase of the deposition potentials confirming the increase of the Co atoms and decrease of the Cu amount. The results of electrochemical and structural analysis show that the deposition potentials of non-magnetic layers plays important role on the amount of magnetic and non-magnetic materials in the layers and thus on the magnetic properties of the multilayers.  相似文献   

18.
There is an increasing demand for long-term ECG monitoring applications which are very low power, small size and capable of wireless data transmission. This paper presents an analog front-end and also modulator for long-term ECG recording purpose. The fully integrated system features three independent channels and a modulator. The analog front-end includes a voltage-to-time conversion and a tunable modulator to achieve a very low power consumption for wireless transmission of the data without analog to digital converter. The proposed system is designed and simulated in a \(0.18\,\upmu \hbox {m}\) CMOS technology and occupies only \(0.245\,\mathrm{mm}^{2}\). It can record ECG signal with 9.2-bit resolution while consuming only \(0.36\,\upmu {\mathrm{W}}\) per channel from a 0.9 V supply. Also, it can transmit data consuming just \(0.72\,{\upmu }\mathrm{W}\) per channel from a 0.9 V supply. The input referred noise of the readout channel is \(2.01\,\upmu {\mathrm{V}}_{{{\rm rms}}}\).  相似文献   

19.
Recently, the design of group sparse regularization has drawn much attention in group sparse signal recovery problem. Two of the most popular group sparsity-inducing regularization models are \(\ell _{1,2}\) and \(\ell _{1,\infty }\) regularization. Nevertheless, they do not promote the intra-group sparsity. For example, Huang and Zhang (Ann Stat 38:1978–2004, 2010) claimed that the \(\ell _{1,2}\) regularization is superior to the \(\ell _1\) regularization only for strongly group sparse signals. This means the sparsity of intra-group is useless for \(\ell _{1,2}\) regularization. Our experiments show that recovering signals with intra-group sparse needs more measurements than those without, by the \(\ell _{1,\infty }\) regularization. In this paper, we propose a novel group sparsity-inducing regularization defined as a mixture of the \(\ell _{1/2}\) norm and the \(\ell _{1}\) norm, referred to as \(\ell _{1/2,1}\) regularization, which can overcome these shortcomings of \(\ell _{1,2}\) and \(\ell _{1,\infty }\) regularization. We define a new null space property for \(\ell _{1/2,1}\) regularization and apply it to establish a recoverability theory for both intra-group and inter-group sparse signals. In addition, we introduce an iteratively reweighted algorithm to solve this model and analyze its convergence. Comprehensive experiments on simulated data show that the proposed \(\ell _{1/2,1}\) regularization is superior to \(\ell _{1,2}\) and \(\ell _{1,\infty }\) regularization.  相似文献   

20.
We give a detailed account of the use of \(\mathbb {Q}\)-curve reductions to construct elliptic curves over \(\mathbb {F}_{p^2}\) with efficiently computable endomorphisms, which can be used to accelerate elliptic curve-based cryptosystems in the same way as Gallant–Lambert–Vanstone (GLV) and Galbraith–Lin–Scott (GLS) endomorphisms. Like GLS (which is a degenerate case of our construction), we offer the advantage over GLV of selecting from a much wider range of curves and thus finding secure group orders when \(p\) is fixed for efficient implementation. Unlike GLS, we also offer the possibility of constructing twist-secure curves. We construct several one-parameter families of elliptic curves over \(\mathbb {F}_{p^2}\) equipped with efficient endomorphisms for every \(p > 3\), and exhibit examples of twist-secure curves over \(\mathbb {F}_{p^2}\) for the efficient Mersenne prime \(p = 2^{127}-1\).  相似文献   

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