基于纳米多晶硅薄膜晶体管分裂漏MAGFET制作和特性

A split-drain magnetic field-effect transistor （MAGFET） based on a nano-polysilicon thin film transistor （TFT） is proposed, which contains one source, two drains and one gate. The sensor chips were fabricated on （100） high resistivity silicon substrate by CMOS technology. When drain-source voltage equals 5.0 V and length and width ratio of the TFT channel is 80 μm/160 μm, the current and voltage magnetic sensitivities of the split-drain MAGFET based on the TFT are 0.018 mA/T and 55 mV/T, respectively. Through adopting nano-polysilicon thin films and nano-polysilicon thin films/high resistivity silicon heterojunction interfaces as the magnetic sensing layers, it is possible to realize detection of the external magnetic field. The test results show that magnetic sensitivity of the split-drain MAGFET can be improved significantly.     

基于纳米多晶硅薄膜晶体管磁传感器制作工艺和特性

A magnetic field sensor based on nano-polysilicon thin films transistors（TFTs） with Hall probes is proposed.The magnetic field sensors are fabricated on <100> orientation high resistivity（ρ>500Ω·cm） silicon substrates by using CMOS technology,which adopt nano-polysilicon thin films with thicknesses of 90 nm and heterojunction interfaces between the nano-polysilicon thin films and the high resistivity silicon substrates as the sensing layers.The experimental results show that when V_DS = 5.0 V,the magnetic sensitivities of magnetic field sensors based on nano-polysilicon TFTs with length-width ratios of 160μm/80μm,320μm/80μm and 480μm/80μm are 78 mV/T,55 mV/T and 34 mV/T,respectively.Under the same conditions,the magnetic sensitivity of the obtained magnetic field sensor is significantly improved in comparison with a Hall magnetic field sensor adopting silicon as the sensing layers.     

Low voltage n-type OFET based on double insulators

A top contact n-type organic field-effect transistor with low operating voltage was fabricated by employing Ta2O5/PMMA as the double insulators and PTCDI-C12 as the semiconductor active layer. The Ta2O5 layer was prepared by using simple economical anodization technique and the PMMA layer was prepared by using the spin-coating method. Compared with the OFET with single Ta2O5 insulator,the device with double insulators shows obviously better electrical performance. It has a field effect electron mobility of 0.063 cm2/Vs,an on/off ratio of 1.7×104 and a threshold voltage of 2.3 V.     

THE DIFFUSION OF Zn IN GaAs AT LOW TEMPERATURE

The diffusion of Zn into GaAs at low temperature has been investigated.The experiments arecarried out in an evacuated and sealed quartz ampoule using ZnAs_2 as the source of Zn.The relation among the junction depth(X_j),the time(t)and the temperature(T)of diffusion hasbeen investigated.It is found that the sheet resistance(R_s)of diffusion layer increases as X_j decreases.The surface concentration(C_s)decreases as 1/T increases,and mobility(μ)decreases as C_s increasesThe C_s versus 1/(X_j,R_s)are plotted,the results are that C_s increases as 1/(X_j,R_s)increases.This is asimple method for determining C_s of the multiple GaAs/GaAlAs epitaxial layer.The mechanism ofZn diffusion in GaAs and InP is discussed.This process has been applied to fabricate GaAs/GaAlAsdouble heterojunction light emitting diodes and an output power of 2—4mW is obtained,the seriesresistance is 3—5Ω.     

A measurement-device-independent quantum key distribution protocol with a heralded single photon source

With a heralded single photon source (HSPS), a measurement-device-independent quantum key distribution (MDI-QKD) protocol is proposed, combined with a three-intensity decoy-state method. HSPS has the two-mode characteristic, one mode is used as signal mode, and the other is used as heralded mode to reduce the influence of the dark count. The lower bound of the yield and the upper bound of the error rate are deduced and the performance of the MDI-QKD protocol with an HSPS is analyzed. The simulation results show that the MDI-QKD protocol with an HSPS can achieve a key generation rate and a secure transmission distance which are close to the theoretical limits of the protocol with a single photon source (SPS). Moreover, the key generation rate will improve with the raise of the senders’ detection efficiency. The key generation rate of the MDI-QKD protocol with an HSPS is a little less than that of the MDI-QKD protocol with a weak coherent source (WCS) in the close range, but will exceed the latter in the far range. Furthermore, a farther transmission distance is obtained due to the two-mode characteristic of HSPS.     

Application of underdetermined blind source separation in ultra-wideband communication signals

Aiming to the estimation of source numbers, mixing matrix and separation of mixing signals under underdetermined case, the article puts forward a method of underdetermined blind source separation （UBSS） with an application in ultra-wideband （UWB） communication signals. The method is based on the sparse characteristic of UWB communication signals in the time domain. Firstly, finding the single source area by calculating the ratio of observed sampling points. Then an algorithm called hough-windowed method was introduced to estimate the number of sources and mixing matrix. Finally the separation of mixing signals using a method based on amended subspace projection. The simulation results indicate that the proposed method can separate UWB communication signals successfully, estimate the mixing matrix with higher accuracy and separate the mixing signals with higher gain compared with other conventional algorithms. At the same time, the method reflects the higher stability and the better noise immunity.     

Novel Optical Fiber Gas Sensor for On-line Measurement of Methane

Based on analysis of near infrared spectral absorption of methane,absorption type optical fiber methane gas sensor with high sensitivity using DFB LD as a source is demonstrated. Light source modulation harmonic measurement is presented in this paper. In order to eliminate the noise, the ratio of the fundamental and second-harmonic signals is used. The mathematical model of gas concentration harmonic measurement is built up.The detection result of methane concentration is also shown. Experiments have proved a sensitivity of 28×10~(-6).     

Low voltage n-type OFET based on double insulators

A top contact n-type organic field-effect transistor with low operating voltage was fabricated by employing Ta2O5/PMMA as the double insulators and PTCDI-Cl2 as the semiconductor active layer. The Ta2O5 layer was prepared by using simple economical anodization technique and the PMMA layer was prepared by using the spin-coating method. Compared with the OFET with single Ta2O5 insulator, the device with double insulators shows obviously better electrical performance. It has a field effect electron mobility of 0.063 cm^2/Vs, an on/off ratio of 1.7 × 10^4 and a threshold voltage of 2.3 V.     

Multi-spectral and hyperspectral image fusion using 3-D wavelet transform

Image fusion is performed between one band of multi-spectral image and two bands of hyperspectral image to produce fused image with the same spatial resolution as source multi-spectral image and the same spectral resolution as source hyperspeetral image. According to the characteristics and 3-Dimensional （3-D） feature analysis of multi-spectral and hyperspectral image data volume, the new fusion approach using 3-D wavelet based method is proposed. This approach is composed of four major procedures： Spatial and spectral resampling, 3-D wavelet transform, wavelet coefficient integration and 3-D inverse wavelet transform. Especially, a novel method, Ratio Image Based Spectral Resampling （RIBSR）method, is proposed to accomplish data resampling in spectral domain by utilizing the property of ratio image. And a new fusion rule, Average and Substitution （A＆S） rule, is employed as the fusion rule to accomplish wavelet coefficient integration. Experimental results illustrate that the fusion approach using 3-D wavelet transform can utilize both spatial and spectral characteristics of source images more adequately and produce fused image with higher quality and fewer artifacts than fusion approach using 2-D wavelet transform. It is also revealed that RIBSR method is capable of interpolating the missing data more effectively and correctly, and A＆S rule can integrate coefficients of source images in 3-D wavelet domain to preserve both spatial and spectral features of source images more properly.     

Prospects of β-SiC Based IMPATT Oscillator for Application in THz Communication and Growth of β-SiC p-n Junction on Ge Modified Si <100> Substrate to Realize THz IMPATTs

The prospects of p+ n n+ cubic Silicon Carbide (3C-SiC/ß-SiC) based IMPATT diode as a potential solid-state Terahertz source is studied for the first time through a modified generalized simulation scheme. The simulation predicts that the device is capable of generating a RF power output of 63.0 W at 0.33 THz with an efficiency of 13%. The effects of parasitic series resistance on the device performance and exploitable RF power level are further simulated. The studies clearly establish the potential of 3C-SiC as a base semiconductor material for high-power THz IMPATT device. Based on the simulation results an attempt has been made to fabricate β- SiC based IMPATT devices in THz region. Single crystalline, epitaxial 3C-SiC films are deposited on silicon (Si) <100> substrates by Rapid Thermal Chemical Vapour Deposition (RTPCVD) at a temperature as low as 800 0C using a single precursor methylsilane, which contains Si and C atoms in the same molecule. No initial surface carbonization step is required in this method. A p-n junction with n-type doping conc. of 4 x 10^24 m-3 (which is similar to the simulated design data) has been grown successfully and the characterization of the grown 3C-SiC film is reported in this paper. It is found that the inclusion of Ge improves the crystal quality and reduces the surface roughness.     

Software Radio——Software Radio： A Review of Design Considerations and Digital Hardware Choices

This paper reviews the requirements for Software Defined Radio （SDR） systems for high-speed wireless applications and compares how well the different technology choices available- from ASICs, FPGAs to digital signal processors （DSPs） and general purpose processors （GPPs） - meet them.     

EEFA： Energy Efficiency Frame Aggregation Scheduling Algorithm for IEEE 802.11n Wireless Network

Packet size is restricted due to the error-prone wireless channel which drops the network energy utilization. Furthermore, the frequent packet retransmissions also lead to energy waste. In order to improve the energy efficiency of wireless networks and save the energy of wireless devices, EEFA （Energy Efficiency Frame Aggregation）, a frame aggregation based energy-efficient scheduling algorithm for IEEE 802.11n wireless network, is proposed. EEFA changes the size of aggregated frame dynamically according to the frame error rate, so as to ensure the data transmission and retransmissions completed during the TXOP and reduce energy consumption of channel contention. NS2 simulation results show that EEFA algorithm achieves better performance than the original frame-aggregation algorithm.     

SDN-Based Data Offioading for 5G Mobile Networks

The rapid growth of 3G/4G enabled devices such as smartphones and tablets in large numbers has created increased demand formobile data services.Wi-Fi offloading helps satisfy the requirements of data-rich applications and terminals with improved multi-media.Wi-Fi is an essential approach to alleviating mobile data traffic load on a cellular network because it provides extra capaci-ty and improves overall performance.In this paper,we propose an integrated LTE/Wi-Fi architecture with software-defined net-working(SDN)abstraction in mobile backhaul and enhanced components that facilitate the move towards next-generation 5G mo-bile networks.Our proposed architecture enables programmable offloading policies that take into account real-time network condi-tions as well as the status of devices and applications.This mechanism improves overall network performance by deriving real-time policies and steering traffic between cellular and Wi-Fi networks more efficiently.     

Distributed Power Control for Energy Conservation in Hybrid Cellular Network with Device-to-Device Communication

Device-to-Device （D2D） com- munication has been proposed as a promising implementation of green communication to benefit the existed cellular network. In order to limit cross-tier interference while explore the gain of short-range communication, we devise a series of distributed power control （DPC） schemes for energy conservation （EC） and enhancement of radio resource utilization in the hybrid system. Firstly, a constrained opportunistic power control model is built up to take advantage of the interference avoidance methodology in the presence of service requirement and power constraint. Then, biasing scheme and admission control are added to evade ineffective power consumption and maintain the feasibility of the system. Upon feasibility, a non-cooperative game is further formulated to exploit the profit in EC with minor influence on spectral efficiency （SE）. The convergence of the DPC schemes is validated and their performance is confirmed via simulation results.     

应力和电阻率可控的适用于高品质因子MEMS器件的原位掺硼LPCVD多晶硅薄膜

The simultaneous control of residual stress and resistivity of polysilicon thin films by adjusting the deposition parameters and annealing conditions is studied. In situ boron doped polysilicon thin films deposited at 520 ℃ by low pressure chemical vapor deposition （LPCVD） are amorphous with relatively large compressive residual stress and high resistivity. Annealing the amorphous films in a temperature range of 600-800 ℃ gives polysilicon films nearly zero-stress and relatively low resistivity. The low residual stress and low resistivity make the polysilicon films attractive for potential applications in micro-electro-mechanical-systems （MEMS） devices, especially in high resonance frequency （high-f） and high quality factor （high-Q） MEMS resonators. In addition, polysilicon thin films deposited at 570 ℃ and those without the post annealing process have low resistivities of 2-5 mΩ·cm. These reported approaches avoid the high temperature annealing process （〉 1000 ℃）, and the promising properties of these films make them suitable for high-Q and high-f MEMS devices.     

Survivable Virtual Network Mapping Using Optimal Backup Topology in Virtualized SDN

Software-Defined Network architecture offers network virtualization through a hypervisor plane to share the same physical substrate among multiple virtual networks. However, for this hypervisor plane, how to map a virtual network to the physical substrate while guaranteeing the survivability in the event of failures, is extremely important. In this paper, we present an efficient virtual network mapping approach using optimal backup topology to survive a single link failure with less resource consumption. Firstly, according to whether the path splitting is supported by virtual networks, we propose the OBT-I and OBT-II algorithms respectively to generate an optimal backup topology which minimizes the total amount of bandwidth constraints. Secondly, we propose a Virtual Network Mapping algorithm with coordinated Primary and Backup Topology （VNM-PBT） to make the best of the substrate network resource. The simulation experiments show that our proposed approach can reduce the average resource consumption and execution time cost, while improving the request acceptance ratio of VNs.     

用于ZigBee的2.4GHz低功耗双增益低噪声放大器

This paper presents a fully differential dual gain low noise amplifier（DGLNA） for low power 2.45-GHz ZigBee/IEEE 802.15.4 applications.The effect of input parasitics on the inductively degenerated cascode LNA is analyzed.Circuit design details within the guidelines of the analysis are presented.The chip was implemented in SMIC 0.18-μm 1P6M RF/mixed signal CMOS process.The DGLNA achieves a maximum gain of 8 dB and a minimum gain of 1 dB with good input return loss.In high gain mode, the measured noise figure（NF） is 2.3-3 dB in the whole 2.45-GHz ISM band.The measured 1-dB compression point, IIP3 and IIP2 is-9, 1 and 33 dBm, respectively.The DGLNA consumes 2 mA of current from a 1.8 V power supply.     

应用于低中频和零中频DVB调谐器中8阶信道滤波器设计

An eighth order active-RC filter for low-IF and zero-IF DVB tuner applications is presented, which is implemented in Butterworth biquad structure. An automatic frequency tuning circuit is introduced to compensate the cut-off frequency variation using a 6-bit switched-capacitor array. Switched-resistor arrays are adopted to cover different cut-off frequencies in low-IF and zero-IF modes. Measurement results show that precise cut-off frequencies at 2.5, 3, 3.5 and 4 MHz in zero-IF mode, 5, 6, 7 and 8 MHz in low-IF mode can be achieved, 60 dB frequency attenuation can be obtained at 20 MHz, and the in-band group delay agrees well with the simulation. Two-tone testing shows the in-band IM3 achieves -52 dB and the out-band IM3 achieves -55 dB with -11 dBm input power. This proposed filter circuit, fabricated in a SMIC 0.18μm CMOS process, consumes 4 mA current with 1.8 V power supply.     

具有频率调谐的GNSS接收机双模复数滤波器

A fifth/seventh order dual-mode OTA-C complex filter for global navigation satellite system receivers is implemented in a 0.18μm CMOS process.This filter can be configured as the narrow mode of a 4.4 MHz bandwidth center at 4.1 MHz or the wide mode of a 22 MHz bandwidth center at 15.42 MHz.A fully differential OTA with source degeneration is used to provide sufficient linearity.Furthermore,a ring CCO based frequency tuning scheme is proposed to reduce frequency variation.The measured results show that in narrow-band mode the image rejection ratio（IMRR）is 35 dB,the filter dissipates 0.8 mA from the 1.8 V power supply,and the out-of-band rejection is 50 dB at 6 MHz offset.In wide-band mode,IMRR is 28 dB and the filter dissipates 3.2 mA.The frequency tuning error is less than±2%.     

The Data Age of Mobile Cellular Network in Germany and China： Policies,Technologies and Markets （Part I）

The UMTS auction in 2000 brought approximately 100 billion DM （Deutsche Mark） for the German National Treasury. T-Mobile （D1-Netz）, Vodafone （D2-Netz）, E-Plus （E1-Netz） and 02 （E2-Netz） have gradually evolved from GSM to full-fledged UMTS operators over the past years. The conglomerate of China Telecom was split twice. China acceded to WTO and promulgated the FITE Provisions. MIIT （Ministry of Industry and Information Technology） became the regulator and China Netcom was incorporated into China Unicorn in 2008. Most recently the layout of 3G future has been reconfirmed by MIIT. Voice service has remained the main source of income in both countries and operators have continued to focus on voice quality and network availability in their respective 2G networks. Because value-added and higher-speed data applications have been gaining market attention, 2.5G and 3G infrastructure has increasingly become the focal network strategy for the operators since the beginning of the new century. Germany has rolled out WCDMA/UMTS services on a large scale in the consumer market, while China has adopted all three 3G standards （TD-SCDMA, WCDMA/UMTS, CDMA2000）, which shall gradually capture a wider 3G subscriber base. The summary shows that the development of the cellular technology and market in Germany and China can be discussed in three distinct historical periods. The conclusion suggests that the case of the cellular technology appears to be consistent with and applicable to a number of arguments widely disputed in economics and management related to technology and innovation, such as dominant design, technology waves/ S-Curve, disruptive technologies, Technology Adoption Life Cycle.