Sp3/sp2 character of the carbon and hydrogen configuration in micro- and nanocrystalline diamond

Hot filament and microwave plasma CVD micro- nanocrystalline diamond films are analysed by visible and ultra-violet excitation source Raman spectroscopy. The sample grain size varies from 20 nm to 2 μm. The hydrogen concentration in samples is measured by SIMS and compared to the grain size, and to the ratio of sp² carbon bonds determined by Raman spectroscopy from the 1332 cm^− 1 diamond peak and the sp² 1550 cm^− 1 G band. Hydrogen concentration appears to be proportional to the sp² bonds ratio. The 3000 cm^− 1 CH_x stretching mode band intensity observed on the Raman spectra is decreasing with the G band intensity. Thermal annealing modifies the sp² phase structure and concentration, as hydrogen outdiffuses.     

Very high temperature annealing effect on amorphous carbon films grown on refractory oxide substrates by pulsed laser deposition

We have carried out very high temperature heat treatment at 1400–2700 °C of about 10 nm-thick amorphous carbon thin films deposited on refractory substrates MgO, Al₂O₃, and yttria-stabilized zirconia (YSZ) using pulsed laser deposition techniques. After the annealing, a few nanometer scale sp² crystallization of the films and a large corrugation with a height of more than 1 μm were observed by Raman spectroscopy analysis and optical/atomic force microscopes, respectively. The corrugation is probably caused by the formation of gases at the film/substrate interface during the heat treatment.     

Atmospheric plasma deposition of diamond-like carbon coatings

The atmospheric pressure plasma-enhanced chemical vapor deposition of diamond-like carbon (DLC) has been investigated. The DLC coatings were grown with a mixture of acetylene, hydrogen and helium that was fed through a linear plasma source. The plasma was driven with radio frequency power at 27.12 MHz. Deposition rates exceeded 0.10 µm/min at substrate temperatures between 155 and 200 °C. Solid-state carbon-13 nuclear magnetic resonance revealed that the coatings contained approximately 43% sp²-bonded carbon and 57% sp³-bonded carbon. Coefficient of friction values for the coatings were found to be 0.24 ± 0.02, which is within the range observed for vacuum deposited DLC.     

Hydrogen incorporation,bonding and stability in nanocrystalline diamond films

The hydrogen concentration in hot filament and microwave plasma CVD nanocrystalline diamond films is analysed by secondary ion mass spectrometry and compared to the film grain size. The surface and bulk film carbon bonds are analysed respectively by X-ray photoelectron spectroscopy (XPS) and ultra-violet Raman spectroscopy. XPS results show the presence of the hydrogenated p-type surface conductive layer. The respective intensities of the 1332 cm^− 1 diamond peak, of the G and D bands related to sp² phases, and of the 3000 cm^− 1 CH_x stretching mode band, are compared on Raman spectra. The samples are submitted to thermal annealing under ultra-high vacuum in order to get hydrogen out-diffusion. XPS analysis shows the surface desorption of hydrogen. Thermal annealing modifies the sp² phase structure as hydrogen out diffuses.     

Substrate temperature effects on the microhardness and adhesion of diamond-like thin films

Diamond-like films were deposited on silicon substrates by r.f. plasma-enhanced chemical vapor deposition from gas methane. In this study, the substrate temperature, T_S, was varied in a wide range from 20 to 370°C while maintaining fixed other important process parameters such as r.f. power (70 W) or pressure (2.5 Pa). The increase of T_S causes an increase of the sp²/(sp²+sp³) bonded carbon ratio and a decrease of the hydrogen content. These changes produce a great modification of the mechanical properties: microhardness, friction coefficient and adhesion. The variations of mechanical properties with T_S correlate well with the sp²/(sp²+sp³) bonded carbon ratio and the hydrogen content in the films showing a gradual transformation of the diamond-like structure into a more sp²-rich one.     

Surface Brillouin scattering on annealed ion-implanted CVD diamond

Single crystal <100> diamond samples were implanted with a total fluence of 1.5 × 10¹⁶  ions/cm² at single energy of 150 keV using carbon ions. This implantation fluence created a damage density that would not restore the diamond structure after annealing. Surface Brillouin scattering studies show that the elastic properties of the highly damaged diamond layer starts to transit from diamond-like to amorphous carbon state at an annealing temperature of 500 °C. The amorphous carbon layer is shown to have a sound velocity (elastic properties) similar to those reported for tetrahedral amorphous carbon (ta-C). Raman spectroscopy, EELS and HRTEM has been used in conjunction with the SBS data to monitor the changes in the carbon implanted diamond at different annealing temperatures.     

Thermal stability and surface modifications of detonation diamond nanoparticles studied with X-ray photoelectron spectroscopy

Detonation nanodiamond (ND) particles were dispersed on silicon nitride (SiN_x) coated sc-Si substrates by spin-coating technique. Their surface density was in the 10¹⁰–10¹¹ cm^?2 range. Thermal stability and surface modifications of ND particles were studied by combined use of X-ray Photoelectron Spectroscopy (XPS) and Field Emission Gun Scanning Electron Microscopy (FEG SEM). Different oxygen-containing functional groups could be identified by XPS and their evolution versus UHV annealing temperature (400–1085 °C) could be monitored in situ. The increase of annealing temperature led to a decrease of oxygen bound to carbon. In particular, functional groups where carbon was bound to oxygen via one σ bond (C–OH, C–O–C) started decomposing first. At 970 °C carbon–oxygen components decreased further. However, the sp²/sp³ carbon ratio did not increase, thus confirming that the graphitization of ND requires higher temperatures. XPS analyses also revealed that no interaction of ND particles with the silicon nitride substrate occurred at temperatures up to about 1000 °C. However, at 1050 °C silicon nitride coated substrates started showing patch-like damaged areas attributable to interaction of silicon nitride with the underlying substrate. Nevertheless ND particles were preserved in undamaged areas, with surface densities exceeding 10¹⁰ cm^?2. These nanoparticles acted as sp³-carbon seeds in a subsequent 15 min Chemical Vapour Deposition run that allowed growing a 60–80 nm diamond film. Our previous study on Si(100) showed that detonation ND particles reacted with silicon between 800 and 900 °C and, as a consequence, no diamond film could be grown after Chemical Vapour Deposition (CVD). These findings demonstrated that the use of a thin silicon nitride buffer layer is preferable insofar as the growth of thin diamond films on silicon devices via nanoseeding is concerned.     

Enhanced cycling stability of Ni-MH battery by depositing amorphous carbon film on the Ti1.4V0.6Ni negative electrode

Amorphous carbon (a-C) films with various thicknesses depending on the reaction time are deposited on the surface of Ti_1.4V_0.6Ni alloy electrodes for Ni-MH (nickel-metal hydride) battery by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD). With the increasing deposition time, the Raman spectra show a gradually disordered sp²-bonding change of the films and the changing trend of sp²/sp³ is obtained by X-ray photoelectron spectroscopy. The a-C film of depositing for 30 min with the thickness of 400 nm shows a favorable stability in alkaline electrolyte, the capacity is enhanced by 36.2% after 50 cycles than the bare electrode, and the charge voltage is 80 mV lower than the bare one. The a-C film with high sp²-bonded carbon content effectively reduces the charge transfer resistance, and as a coating layer, the dissolution of V of the alloy is also inhibited. In particular, to get a proper discharge voltage and a stable capacity simultaneously, covering completely and an appropriate thickness of the a-C film are crucial for an expected performance.     

Changes in chemical bonding of diamond-like carbon films by atomic-hydrogen exposure

We have deposited unhydrogenated diamond-like carbon (DLC) films on Si substrate by pulsed laser deposition using KrF excimer laser, and investigated the effects of atomic-hydrogen exposure on the structure and chemical bonding of the DLC films by photoelectron spectroscopy (PES) using synchrotron radiation and Raman spectroscopy. The fraction of sp³ bonds at the film surface, as evaluated from C1s spectra, increased at a substrate temperature of 400 °C by atomic-hydrogen exposure, whereas the sp³ fraction decreased at 700 °C with increasing exposure time. It was found that the sp³ fraction was higher at the surfaces than the subsurfaces of the films exposed to atomic hydrogen at both the temperatures. The Raman spectrum of the film exposed to atomic hydrogen at 400 °C showed that the clustering of sp² carbon atoms progressed inside the film near the surface even at such a low temperature as 400 °C.     

Long-term H-release of hard and intermediate between hard and soft amorphous carbon evidenced by in situ Raman microscopy under isothermal heating

We study the kinetics of the H release from plasma-deposited hydrogenated amorphous carbon films under isothermal heating at 450, 500 and 600 °C for long times up to several days using in situ Raman microscopy. Four Raman parameters are analyzed. They allow the identification of different processes such as the carbon network reorganization and the H release from sp³ or sp² carbon atoms and the corresponding timescales. Carbon reorganization with aromatization and loss of sp³ hybridization occurs first in 100 min at 500 °C. The final organization is similar at all investigated temperatures. Full H release from sp³ carbon occurs on a longer timescale of about 10 h while H release from sp² carbon atoms is only partial, even after several days. All these processes occur more rapidly with higher initial H content, in agreement with what is known about the stability of these types of films. A quantitative analysis of these kinetics studies gives valuable information about the microscopic processes at the origin of the H release through the determination of activation energies.     

Vacuum or flowing argon: What is the best synthesis atmosphere for nanodiamond-derived carbon onions for supercapacitor electrodes?

We present a comprehensive study on the influence of the synthesis atmosphere on the structure and properties of nanodiamond-derived carbon onions. Carbon onions were synthesized at 1300 and 1700 °C in high vacuum or argon flow, using rapid dynamic heating and cooling. High vacuum annealing yielded carbon onions with nearly perfect spherical shape. An increase in surface area was caused by a decrease in particle density when transitioning from sp³ to sp² hybridization and negligible amounts of disordered carbon were produced. In contrast, carbon onions from annealing nanodiamonds in flowing argon are highly interconnected by few-layer graphene nanoribbons. The presence of the latter improves the electrical conductivity, which is reflected by an enhanced power handling ability of supercapacitor electrodes operated in an organic electrolyte (1 M tetraethylammonium tetrafluoroborate in acetonitrile). Carbon onions synthesized in argon flow at 1700 °C show a specific capacitance of 20 F/g at 20 A/g current density and 2.7 V cell voltage which is an improvement of more than 40% compared to vacuum annealing. The same effect was measured for a synthesis temperature of 1300 °C, with a 140% higher capacitance at 20 A/g for argon flow compared to vacuum annealing.     

Temperature effect on bonding structures of amorphous carbon containing more than 30at.% silicon

Bonding evolution of amorphous carbon incorporated with Si or a-C(Si) in a thermal process has not been studied. Unhydrogenated a-C(Si) films were deposited by magnetron sputtering to undergo two different thermal processes: i) sputter deposition at substrate temperatures from 100 to 500 °C; ii) room temperature deposition followed by annealing at 200 to 1000 °C. The hardness of the films deposited at high temperature exhibits a monotonic decrease whereas the films deposited at room temperature maintained their hardness until 600 °C. X-ray photoelectron spectroscopy and Raman spectroscopy were used to analyze the composition and bonding structures. It was established that the change in the mechanical property is closely related to the atomic bonding structures, their relative fractions and the evolution (conversion from C–C sp³ → CC sp² or CC sp² → C–Si sp³) as well as clustering of sp² structures.     

Annealing effect on temperature coefficient of resistivity in La1−xSrxMnO3 ceramics

We investigated annealing effects of La_1?xSr_xMnO₃ (x = 0–0.6) on electrical resistivity and the temperature coefficient of resistivity (TCR). The annealed samples’ resistivity was lower than those of non-annealed samples. For example, annealing changed the resistivity of x = 0.3 at 25 °C from 4.50 × 10^?5 to 3.71 × 10^?5 Ω m. Remarkable difference in TCR was observed after annealing, for x = 0.3, 0.45, and 0.5. For x = 0.3, the TCR after annealing was 4000 ppm/°C, which was 1250 ppm/°C greater than that before annealing. We investigated (1) crystal phase, (2) Mn average valence, (3) Mott insulator–metal transition temperature, and (4) microstructure. The microstructure was remarkably varied for annealed x = 0.3 and 0.5. The average grain size of the x = 0.3 increased from 1.60 up to 2.38 μm. Results show that annealing affects resistivity and TCR because of grain growth during annealing.     

Large area deposition of boron doped nano-crystalline diamond films at low temperatures using microwave plasma enhanced chemical vapour deposition with linear antenna delivery

We report on the preparation and characterisation of boron (B) doped nano-crystalline diamond (B-NCD) layers grown over large areas (up to 50 cm × 30 cm) and at low substrate temperatures (< 650 °C) using microwave plasma enhanced linear antenna chemical vapour deposition apparatus (MW-LA-PECVD). B-NCD layers were grown in H₂/CH₄/CO₂ and H₂/CH₄ gas mixtures with added trimethylboron (TMB). Layers with thicknesses of 150 nm to 1 μm have been prepared with B/C ratios up to 15000 ppm over a range of CO₂/CH₄ ratios to study the effect of oxygen (O) on the incorporation rate of B into the solid phase and the effect on the quality of the B-NCD with respect to sp³/sp² ratio. Experimental results show the reduction of boron acceptor concentration with increasing CO₂ concentration. Higher sp³/sp² ratios were measured by Raman spectroscopy with increasing TMB concentration in the gas phase without CO₂. Incorporation of high concentrations of B (up to 1.75 × 10²¹ cm³) in the solid is demonstrated as measured by neutron depth profiling, Hall effect and spectroscopic ellipsometry.     

The production of carbon particles of different shapes produced by the chlorination of Cr(C5H5)2

Carbon particles have been obtained by the chlorination of chromocene (Cr(C₅H₅)₂). Changes in their morphology and micro-nanostructure have been monitored at two different temperatures. At 400 °C, filled materials (tubes and spheres) and agglomerated round particles are formed, whereas at 900 °C closed-end tubes, hollow and solid spheres were produced. Transmission electron microscopy shows that these particles are formed of highly disordered graphene-like layers, which is confirmed by the absence of the 2D and 2G bands in the Raman spectrum. The calculated in-plane correlation length of these graphene-like layers is 1.2 ± 0.1 nm. In all the carbon particles, electron energy-loss spectroscopy shows a very similar sp² carbon bonding content (89–98%) and mass density ranging from 1.6 to 1.8 g/cm³, both below standard graphite. Textural studies performed on the sample prepared at 900 °C show Type II adsorption isotherms with a surface area of 694 m²/g.     

Substrate temperature effects on the electron field emission properties of nitrogen doped ultra-nanocrystalline diamond

For the purpose of improving the electron field emission properties of ultra-nanocrystalline diamond (UNCD) films, nitrogen species were doped into UNCD films by microwave plasma chemical vapor deposition (MPCVD) process at high substrate temperature ranging from 600° to 830 °C, using 10% N₂ in Ar/CH₄ plasma. Secondary ion mass spectrometer (SIMS) analysis indicates that the specimens contain almost the same amount of nitrogen, regardless of the substrate temperature. But the electrical conductivity increased nearly 2 orders of magnitude, from 1 to 90 cm^− 1 Ω^− 1, when the substrate temperature increased from 600° to 830 °C. The electron field emission properties of the films were also pronouncedly improved, that is, the turn-on field decreased from 20 V/μm to 10 V/μm and the electron field emission current density increased from less than 0.05 mA/cm² to 15 mA/cm². The possible mechanism is presumed to be that the nitrogen incorporated in UNCD films are residing at grain boundary regions, converting sp³-bonded carbons into sp²-bonded ones. The nitrogen ions inject electrons into the grain boundary carbons, increasing the electrical conductivity of the grain boundary regions, which improves the efficiency for electron transport from the substrate to the emission sites, the diamond grains.     

Defect chemistry of a high-k ‘Y5V’ (Ba0.95Eu0.05)TiO3 ceramic

The influence of the sintering temperature (T_s) on the structure, dielectric and valence-state properties of (Ba_1−xEu_x)TiO₃ (x=0.05) ceramics was investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), electron paramagnetic resonance (EPR), Raman spectroscopy, and dielectric temperature measurements. An increase in T_s can increase the solubility limit of Eu in BaTiO₃. When the T_s was increased to 1450 °C, a high-k ‘Y5V’ (ε′_RT=8500) ceramic (C-BE5T) with a single-phase cubic structure was obtained. The dielectric peak shifted rapidly toward lower temperatures with increasing T_s at a rate of −0.46 °C/K. A symmetric (200) XRD peak, exaggerated grain growth (5.6 μm), a mixed valence of Eu²⁺/Eu³⁺, an asymmetric main Raman band at 2494 cm⁻¹ and a weak sharp band at 1516 cm⁻¹ in the high-wavenumber region are characteristics of cubic symmetry of C-BE5T. The formation of a solid solution of C-BE5T and defect chemistry are discussed.     

Thermal grafting of organic monolayers on amorphous carbon and silicon (111) surfaces: A comparative study

Thermally-assisted (160 °C) liquid phase grafting of linear alkene molecules has been performed simultaneously on amorphous carbon (a-C) and hydrogen passivated crystalline silicon Si(111):H surfaces. Atomically flat a-C films with a high sp³ average surface hybridization, sp³ / (sp² + sp³) = 0.62, were grown using pulsed laser deposition (PLD). Quantitative analysis of X-ray photoelectron spectroscopy, X-ray reflectometry and spectroscopic ellipsometry data show the immobilization of a densely packed (> 3 × 10¹⁴ cm^? 2) single layer of organic molecules. In contrast with crystalline Si(111):H and other forms of carbon films, no surface preparation is required for the thermal grafting of alkene molecules on PLD amorphous carbon. The molecular grafted a-C surface is stable against ambient oxidation, in contrast with the grafted crystalline silicon surface.     

The influence of the formation of Fe3C on graphitization in a carbon-rich iron-amorphous carbon mixture processed by Spark Plasma Sintering and annealing

A promising fabrication method of bulk porous graphitic materials is based on consolidation of metal-amorphous carbon powder mixtures, in which the metal serves as both a graphitization catalyst and a removable space holder. In this work, iron was evaluated for this purpose. The phase formation and evolution in a carbon-rich iron-amorphous carbon mixture during Spark Plasma Sintering (SPS) and subsequent annealing was studied to reveal the peculiarities of the low-temperature catalytic graphitization process determined by the transformations of the iron catalyst. Mixtures of carbon black with iron of the Fe-20 wt%C composition were ball milled, Spark Plasma Sintered at 600–900 °C for 5 min and further annealed at 800 °C for 2 h. During the SPS, iron carbide Fe₃C formed, while the free carbon remained poorly graphitized. In the compact sintered at 900 °C, Fe₃C was the only iron-containing phase and metallic iron was not detected. For conducting structural studies of the free carbon by X-ray diffraction and Raman spectroscopy, iron was dissolved from the sintered compacts in HCl solution. It was found that during annealing, the graphitization degree increased only in the compacts that still contained free (metallic) iron. These results suggest that Fe₃C does not catalyze graphitization in a carbon-rich mixture of iron and carbon black making the presence of residual (metallic) iron crucial for the advancement of catalytic graphitization during annealing.     

Internal friction investigation of phase transformation in nearly stoichiometric LaMnO3+δ

Rhombohedral LaMnO_3+δ powders, prepared by two different soft chemistry routes (co-precipitation and hydrothermal synthesis), are sintered at 1400 °C for 2 h in air. Measurements of internal friction Q⁻¹(T) and shear modulus G(T), at low frequencies from −180 to 700 °C under vacuum, evidence three structural transitions of nearly stoichiometric orthorhombic LaMnO_3+δ. The first one, at 250 or 290 °C, depending on the processing followed, is associated to either a Jahn–Teller structural transition or a phase transformation from orthorhombic to pseudo-cubic. The second one at 610 or 630 °C is related to a phase transformation from pseudo-cubic or orthorhombic to rhombohedral. Below the Neel temperature, around −170 °C, a relaxation peak could be associated, for samples prepared according to both processing routes, to the motion of Weiss domains.