Photophysics and Photocurrent Generation in Polythiophene/Polyfluorene Copolymer Blends

Here, studies on the evolution of photophysics and device performance with annealing of blends of poly(3‐hexylthiophene) with the two polyfluorene copolymers poly((9,9‐dioctylfluorene)‐2,7‐diyl‐alt‐[4,7‐bis(3‐hexylthien‐5‐yl)‐2,1,3‐benzothiadiazole]‐2′,2′′‐diyl) (F8TBT) and poly(9,9‐dioctylfluorene‐co‐benzothiadiazole) (F8BT) are reported. In blends with F8TBT, P3HT is found to reorganize at low annealing temperatures (100 °C or below), evidenced by a redshift of both absorption and photoluminescence (PL), and by a decrease in PL lifetime. Annealing to 140 °C, however, is found to optimize device performance, accompanied by an increase in PL efficiency and lifetime. Grazing‐incidence small‐angle X‐ray scattering is also performed to study the evolution in film nanomorphology with annealing, with the 140 °C‐annealed film showing enhanced phase separation. It is concluded that reorganization of P3HT alone is not sufficient to optimize device performance but must also be accompanied by a coarsening of the morphology to promote charge separation. The shape of the photocurrent action spectra of P3HT:F8TBT devices is also studied, aided by optical modeling of the absorption spectrum of the blend in a device structure. Changes in the shape of the photocurrent action spectra with annealing are observed, and these are attributed to changes in the relative contribution of each polymer to photocurrent as morphology and polymer conformation evolve. In particular, in as‐spun films from xylene, photocurrent is preferentially generated from ordered P3HT segments attributed to the increased charge separation efficiency in ordered P3HT compared to disordered P3HT. For optimized devices, photocurrent is efficiently generated from both P3HT and F8TBT. In contrast to blends with F8TBT, P3HT is only found to reorganize in blends with F8BT at annealing temperatures of over 200 °C. The low efficiency of the P3HT:F8BT system can then be attributed to poor charge generation and separation efficiencies that result from the failure of P3HT to reorganize.     

Quantifying Interfacial Electric Fields and Local Crystallinity in Polymer–Fullerene Bulk‐Heterojunction Solar Cells

The challenges of experimentally probing the physical and electronic structures of the highly intermixed organic semiconductor blends that comprise active layers in high‐performance organic photovoltaic (OPV) cells ultimately limit the fundamental understanding of the device performance. We use Fourier‐transform IR (FTIR)‐absorption spectroscopy to quantitatively determine the interfacial electric field in blended poly(3‐hexylthiophene) (P3HT):phenyl‐ C61‐butyric acid methyl ester (PCBM) thin films. The interfacial electric field is ≈0.2 V nm^?1 in the as‐spun film and blends annealing at temperatures as high as 150 °C, which is the optimal annealing temperature in terms of OPV performance. The field decreases to a negligible value upon further annealing to 170 °C, at which temperature PCBM changes from amorphous to crystalline and the open‐circuit voltage of the solar cell decreases from 0.62 to 0.4 V. In addition, our measurements also allow determination of the absolute degree of crystallinity within the acceptor material. The roles of interfacial field and local crystallinity in OPV device performance are discussed.     

Enhanced Thermal Stability and Efficiency of Polymer Bulk‐Heterojunction Solar Cells by Low‐Temperature Drying of the Active Layer

This study addresses two key issues, stability and efficiency, of polymer solar cells based on blended poly(3‐hexylthiophene) (P3HT) and [6,6]‐phenyl‐C61‐butyric acid methyl ester (PCBM) by demonstrating a film‐forming process that involves low‐temperature drying (?5 °C) and subsequent annealing of the active layer. The low‐temperature process achieves 4.70% power conversion efficiency (PCE) and ～1250 h storage half‐life at 65 °C, which are significant improvements over the 3.39% PCE and ～143 h half‐life of the regular room‐temperature process. The improvements are attributed to the enhanced nucleation of P3HT crystallites as well as the minimized separation of the P3HT and PCBM phases at the low drying temperature, which upon post‐drying annealing results in a morphology consisting of small PCBM‐rich domains interspersed within a densely interconnected P3HT crystal network. This morphology provides ample bulk‐heterojunction area for charge generation while allowing for facile charge transport; moreover, the P3HT crystal network serves as an immobile frame at heating temperatures less than the melting point (T_m) of P3HT, thus preventing PCBM/P3HT phase separation and the corresponding device degradation.     

Evolution of Structure,Optoelectronic Properties,and Device Performance of Polythiophene:Fullerene Solar Cells During Thermal Annealing

We use spectroscopic ellipsometry to study the evolution of structure and optoelectronic properties of poly(3‐hexylthiophene) (P3HT) and [6,6]‐phenyl C61‐butyric acid methyl ester (PCBM) photovoltaic thin film blends upon thermal annealing. Four distinct processes are identified: the evaporation of residual solvent above the glass transition temperature of the blend, the relaxation of non‐equilibrium molecular conformation formed through spin‐casting, the crystallization of both P3HT and PCBM components, and the phase separation of the P3HT and PCBM domains. Devices annealed at 150 °C for between 10 and 60 min exhibit an average power conversion efficiency of around 4.0%. We find that the rate at which the P3HT/PCBM is returned to room temperature is more important in determining device efficiency than the duration of the isothermal annealing process. We conclude that the rapid quenching of a film from the annealing temperature to room temperature hampers the crystallization of the P3HT and can trap non‐equilibrium morphological states. Such states apparently impact on device short circuit current, fill factor and, thus, operational efficiency.     

Design and synthesis of indole-substituted fullerene derivatives with different side groups for organic photovoltaic devices

A series of indole-substituted fulleropyrrolidine derivatives with different side groups on a pyrrolidine rings, including methyl (OIMC60P), benzyl (OIBC60P), 2,5-difluoroinebenzyl (OIB2FC60P), and 2,3,4,5,6-pentafluoroinebenzyl (OIB5FC60P), have been synthesized and used as electron acceptor in the active layer of polymer-fullerene solar cells to investigate the effect of various substitute groups on the electronic structures, morphologies, and device performances. Optical absorption, electrochemical properties and solubility of the fullerene derivatives have been explored and compared. The inverted photovoltaic devices with the configuration ITO/ZnO/Poly(3-hexylthiophene)(P3HT):[60]fullerene derivatives/MoO₃/Ag have been prepared including the reference cell based on the P3HT: methyl [6,6]-phenyl-C61-butylate (PCBM) blend films. All the devices properties were measured in air without encapsulation. We also investigated the effect of the thermal annealing on the crystallinity and morphology of the active layer and the device performance. The device based on the blend film of P3HT and OIBC60P showed a power conversion efficiency of 2.46% under illumination by AM1.5G (100 mW/cm²) after the annealing treatment at 120 °C for 10 min in air.     

Optimization of Si NC/P3HT Hybrid Solar Cells

Silicon nanocrystals (Si NCs) are shown to be an electron acceptor in hybrid solar cells combining Si NCs with poly(3‐hexylthiophene) (P3HT). The effects of annealing and different metal electrodes on Si NC/P3HT hybrid solar cells are studied in this paper. After annealing at 150 °C, Si NC/P3HT solar cells exhibit power conversion efficiencies as high as 1.47%. The hole mobility in the P3HT phase extracted from space‐charge‐limited current measurements of hole‐only devices increases from 2.48 × 10^?10 to 1.11 × 10^?9 m² V^?1 s^?1 after annealing, resulting in better transport in the solar cells. A quenching of the open‐circuit voltage and short‐circuit current is observed when high work function metals are deposited as the cathode on Si NC/P3HT hybrid devices.     

The Impact of Polymer Regioregularity on Charge Transport and Efficiency of P3HT:PCBM Photovoltaic Devices

The charge transport in pristine poly(3‐hexylthiophene) (P3HT) films and in photovoltaic blends of P3HT with [6,6]‐phenyl C61 butyric acid methyl ester (PCBM) is investigated to study the influence of charge‐carrier transport on photovoltaic efficiency. The field‐ and temperature dependence of the charge‐carrier mobility in P3HT of three different regioregularities, namely, regiorandom, regioregular with medium regioregularity, and regioregular with very high regioregularity are investigated by the time‐of‐flight technique. While medium and very high regioregularity polymers show the typical absorption features of ordered lamellar structures of P3HT in the solid state even without previous annealing, films of regiorandom P3HT are very disordered as indicated by their broad and featureless absorption. This structural difference in the solid state coincides with partially non‐dispersive transport and hole mobilities µ_h of around 10^?4 and 10^?5 cm² V^?1 s^?1 for the high and medium regioregularity P3HT, respectively, and a slow and dispersive charge transport for the regiorandom P3HT. Upon blending the regioregular polymers with PCBM, the hole mobilities are typically reduced by one order of magnitude, but they do not significantly change upon additional post‐spincasting annealing. Only in the case of P3HT with high regioregularity are the electron mobilities similar to the hole mobilities and the charge transport is, thus, balanced. Nonetheless, devices prepared from both materials exhibit similar power conversion efficiencies of 2.5%, indicating that very high regioregularity may not substantially improve order and charge‐carrier transport in P3HT:PCBM and does not lead to significant improvements in the power‐conversion efficiency of photovoltaic devices.     

Performance of 1 eV GaNAsSb‐based photovoltaic cell on Si substrate at different growth temperatures

We report the performance of a 1 eV GaNAsSb photovoltaic cell grown on Si/Si–Ge substrate using molecular beam epitaxy at different growth temperatures. The sample grown at 420°C showed the highest energy conversion efficiency, with a short circuit current of 18 mA/cm² and open circuit voltage of 0.53 V. With different growth temperature, performance of the cells degrade, which is attributed to the increase of nitrogen‐related defects and the decrease of antimony incorporation at higher growth temperature. Copyright © 2017 John Wiley & Sons, Ltd.     

Softening temperature on sputtered ZnO interfacial barrier layer for an efficient charge transfer P3HT/ZnO and better interfacial stability in plastic organic photovoltaic devices

We demonstrate the usefulness of RF magnetron sputtering ZnO thin film at softening temperature, as interfacial barrier layer in air stable flexible inverted organic photovoltaic devices. We investigate the influence of annealing on the ZnO crystallinity, on the ITO substrate morphology and charge transport at the ZnO/active layer interface. The photo-physical and structural characteristics of P3HT beside ZnO interfacial layer and the photovoltaic device performances were also studied using UV–vis spectroscopy, photoluminescence (PL) and J-V characteristic. Finally, we study the interfacial stability of devices with and without ZnO interfacial layer in both normal and inverted structure OPVs. We show that under optimized sputtering conditions, higher order and orientation structure of P3HT, the ZnO thermally annealed beside active layer offers better efficiency of contact between the active layer and interfacial layer. We also show that ZnO annealed at a softening temperature of 180 °C is functional for both photovoltaic devices (rigid and plastic substrates), leading to improved performance and stability of plastic solar cell devices.     

Performance Analysis of Printed Bulk Heterojunction Solar Cells

In this paper we report on printed bulk heterojunction solar cells from poly(3‐hexylthiophene) (P3HT) and [6,6]‐phenyl C₆₁ butyric acid methyl ester (PCBM) with power efficiencies of over 4 %. Devices have been produced by doctor blading, which is a reel‐to‐reel compatible large‐area coating technique. Devices exhibit a short‐circuit current of over 11.5 mA cm^–2, a fill factor of 58 %, and an open‐circuit voltage of 615 mV, resulting in an AM1.5 power efficiency of over 4.0 % at 25 °C and under 100 mW cm^–2. The mismatch factor of the solar simulator is cross‐calibrated by determining the spectral quantum efficiency of organic devices as well as of a calibrated Si device, and by the combination of outdoor tests; these efficiencies are precise within less than 3 % relative variation. Although the devices are regarded as fairly optimized, analysis in terms of a one‐diode equivalent circuit reveals residual losses and loss mechanisms. Most interestingly, the analysis points out the different properties of spin‐coated versus bladed devices. Based on this analysis, the future efficiency potential of P3HT–PCBM solar cells is analyzed.     

Novel Cu Nanowires/Graphene as the Back Contact for CdTe Solar Cells

Cu‐nanowire‐doped graphene (Cu NWs/graphene) is successfully incorporated as the back contact in thin‐film CdTe solar cells. 1D, single‐crystal Cu nanowires (NWs) are prepared by a hydrothermal method at 160 °C and 3D, highly crystalline graphene is obtained by ambient‐pressure CVD at 1000 °C. The Cu NWs/graphene back contact is obtained from fully mixing the Cu nanowires and graphene with poly(vinylidene fluoride) (PVDF) and N‐methyl pyrrolidinone (NMP), and then annealing at 185 °C for solidification. The back contact possesses a high electrical conductivity of 16.7 S cm^?1 and a carrier mobility of 16.2 cm² V^?1 s^?1. The efficiency of solar cells with Cu NWs/graphene achieved is up to 12.1%, higher than that of cells with traditional back contacts using Cu‐particle‐doped graphite (10.5%) or Cu thin films (9.1%). This indicates that the Cu NWs/graphene back contact improves the hole collection ability of CdTe cells due to the percolating network, with the super‐high aspect ratio of the Cu nanowires offering enormous electrical transport routes to connect the individual graphene sheets. The cells with Cu NWs/graphene also exhibit an excellent thermal stability, because they can supply an active Cu diffusion source to form an stable intermediate layer of CuTe between the CdTe layer and the back contact.     

Abrupt Morphology Change upon Thermal Annealing in Poly(3‐Hexylthiophene)/Soluble Fullerene Blend Films for Polymer Solar Cells

The in situ morphology change upon thermal annealing in bulk heterojunction blend films of regioregular poly(3‐hexylthiophene) (P3HT) and 1‐(3‐methoxycarbonyl)‐propyl‐1‐phenyl‐(6,6)C₆₁ (PCBM) is measured by a grazing incidence X‐ray diffraction (GIXD) method using a synchrotron radiation source. The results show that the film morphology—including the size and population of P3HT crystallites—abruptly changes at 140 °C between 5 and 30 min and is then stable up to 120 min. This trend is almost in good agreement with the performance change of polymer solar cells fabricated under the same conditions. The certain morphology change after 5 min annealing at 140 °C is assigned to the on‐going thermal transition of P3HT molecules in the presence of PCBM transition. Field‐emission scanning electron microscopy measurements show that the crack‐like surface of blend films becomes smaller after a very short annealing time, but does not change further with increasing annealing time. These findings indicate that the stability of P3HT:PCBM solar cells cannot be secured by short‐time annealing owing to the unsettled morphology, even though the resulting efficiency is high.     

Elaboration of P3HT/CNT/PCBM Composites for Organic Photovoltaic Cells

This Full Paper focuses on the preparation of single‐walled or multi‐walled carbon nanotube solutions with regioregular poly(3‐hexylthiophene) (P3HT) and a fullerene derivative 1‐(3‐methoxycarbonyl) propyl‐1‐phenyl[6,6]C₆₁ (PCBM) using a high dissolution and concentration method to exactly control the ratio of carbon nanotubes (CNTs) to the P3HT/PCBM mixture and disperse the CNTs homogeneously throughout the matrix. The CNT/P3HT/PCBM composites are deposed using a spin‐coating technique and characterized by absorption and fluorescence spectroscopy and by atomic force microscopy to underline the structure and the charge transfer between the CNTs and P3HT. The performance of photovoltaic devices obtained using these composites as a photoactive layer mainly show an increase of the short circuit current and a slight decrease of the open circuit voltage which generally leads to an improvement of the solar cell performances to an optimum CNT percentage. The best results are obtained with a P3HT/PCBM (1 : 1) mixture with 0.1 wt % multi‐walled carbon nanotubes with an open circuit voltage (V_oc) of 0.57 V, a current density at the short‐circuit (I_sc) of 9.3 mA cm^–2 and a fill factor of 38.4 %, which leads to a power conversion efficiency of 2.0 % (irradiance of 100 mW cm^–2 spectroscopically distributed following AM1.5).     

Efficient Polythiophene/Polyfluorene Copolymer Bulk Heterojunction Photovoltaic Devices: Device Physics and Annealing Effects

Here the influence of annealing on the operational efficiency of all‐polymer solar cells based on blends of the polymers poly(3‐hexylthiophene) (P3HT) and poly((9,9‐dioctylfluorene)‐2,7‐diyl‐alt‐[4,7‐bis(3‐hexylthiophen‐5‐yl)‐2,1,3‐benzothiadiazole]‐2′,2″‐diyl) (F8TBT) is investigated. Annealing of completed devices is found to result in an increase in power conversion efficiency from 0.14 to 1.20%, while annealing of films prior to top electrode deposition increases device efficiency to only 0.19% due to a lowering of the open‐circuit voltage and short‐circuit current. By studying the dependence of photocurrent on intensity and effective applied bias, annealing is found to increase charge generation efficiency through an increase in the efficiency of the separation of bound electron‐hole pairs following charge transfer. However, unlike many other all‐polymer blends, this increase in charge separation efficiency is not only due to an increase in the degree of phase separation that assists in the spatial separation of electron‐hole pairs, but also due to an order of magnitude increase in the hole mobility of the P3HT phase. The increase in hole mobility with annealing is attributed to the ordering of P3HT chains evidenced by the red‐shifting of P3HT optical absorption in the blend. We also use X‐ray photoelectron spectroscopy (XPS) to study the influence of annealing protocol on film interface composition. Surprisingly both top and bottom electrode/blend interfaces are enriched with P3HT, with the blend/top electrode interface consisting of more than 95% P3HT for as‐spun films and films annealed without a top electrode. Films annealed following top electrode deposition, however, show an increase in F8TBT composition to ～15%. The implications of interfacial composition and the origin of open‐circuit voltage in these devices are also discussed.     

Influence of molar mass ratio,annealing temperature and cathode buffer layer on power conversion efficiency of P3HT:PC71BM based organic bulk heterojunction solar cell

In bulk heterojunction (BHJ) solar cells, the molar mass ratio of donor-acceptor polymers, the annealing temperature (T_an) and the cathode buffer layer plays very consequential role in improving the power conversion efficiency (PCE) by tuning the film morphology and enhancing the charge carrier dynamics. A comprehensive understanding of each of these factors is essential in order to optimize the performance of organic solar cells (OSCs). Albeit there are several fundamental reports regarding these factors, an altogether meticulous correlation of these physical processes with experimental evidence of the photo active layer are required. In this work, we systematically analyzed the influence of different molar mass ratio, the annealing temperature (T_an) and the cathode buffer layer of rrP3HT:PC₇₁BM based BHJ solar cells and their corresponding photovoltaic performances were correlated carefully with their thin film growth structure and energy level diagram. The device having 1:0.8 molar mass ratio of rrP3HT:PC₇₁BM and T_an = 150 °C annealing temperature with Bathocuproine (BCP) as the cathode buffer layer having ITO/PEDOT:PSS/rrP3HT:PC₇₁BM (molar mass ratio = 1:0.8; (T_an = 150 °C)/BCP/Al) configuration showed the best device performance with PCE, ɳ = 4.79%, Jsc = 14.21 mA/cm², V_oc = 0.58 V and FF = 57.8%. This drastic variation in PCE of the device having BCP/Al as the cathode contact compared to the other device configurations is due to the coalesced effects of better hole-blocking capacity of BCP along with Al and better phase separation of the active blend layer at 150 °C annealing temperature. These results explicate the cumulate role of all these physical parameters and their combined contribution to the PCE amendment and overall device performance with rrP3HT:PC₇₁BM based organic BHJ solar cell.     

Low temperature fabrication of hybrid solar cells using co-sensitizer of perovskite and lead sulfide nanoparticles

Our cost-effective approach for hybridizing methylammonium lead iodide and PbS nanoparticles at low temperature (≤100 °C) for photovoltaic devices is introduced. As employed into a perovskite based solar cell platform, effects of PbS on the device performance were investigated. Through experimental observations under simulated air-mass 1.5G illumination (irradiation intensity of 100 mWcm⁻²), the efficiency of a perovskite:PbS device is 11% higher than that of a pristine perovskite solar cell under the same fabrication conditions as a result of the broadened absorption range in the infrared region. The highest photovoltaic performance was observed at a PbS concentration of 2% with an open-circuit voltage, short-circuit current density, fill factor, and power-conversion efficiency of 0.557 V, 22.841 mA cm⁻², 0.55, and 6.99%, respectively. Furthermore, PbS NPs could induce hydrophobic modification of the perovskite surface, leading to an improvement of the device stability in the air. Finally, the low-temperature and cost-effective fabrication process of the hybrid solar cells is a good premise for developing flexible/stretchable cells as well as future optoelectronic devices.     

The Effect of Thermal Treatment on the Morphology and Charge Carrier Dynamics in a Polythiophene–Fullerene Bulk Heterojunction

The influence of various thermal treatment steps on the morphology and the photoconductive properties of a non‐contacted, 50 nm thick blend (50:50 wt.‐%) of [6,6]‐phenyl C₆₁‐butyric acid methyl ester (PCBM) and poly(3‐hexyl thiophene) (P3HT) spin‐coated from chloroform has been studied using transmission electron microscopy (TEM) and the electrodeless time‐resolved microwave conductivity technique. After annealing the film for 5 min at 80 °C, TEM images show the formation of crystalline fibrils of P3HT due to a more ordered packing of the polymer chains. The thermal treatment results in a large increase of the photoconductivity, due to an enhancement of the hole mobility in these crystalline P3HT domains from 0.0056 cm² V^–1 s ^–1 for the non‐annealed sample to 0.044 cm² V^–1 s ^–1 for the sample annealed at 80 °C. In contrast, the temporal shape of the photoconductivity, with typical decay half‐times, τ_1/2, of 1 μs for the lowest excitation intensities, is unaffected by the temperature treatment. Further annealing of the sample at 130 °C results in the formation of three different substructures within the heterojunction: a PCBM:P3HT blend with PCBM‐rich clusters, a region depleted of PCBM, and large PCBM single crystals. Only a minor increase in the amplitude, but a tenfold rise of the decay time of the photoconductivity, is observed. This is explained by the formation of PCBM‐rich clusters and large PCBM single crystals, resulting in an increased diffusional escape probability for mobile charge carriers and hence reduced recombination.     

The Effect of Nanoparticle Shape on the Photocarrier Dynamics and Photovoltaic Device Performance of Poly(3‐hexylthiophene):CdSe Nanoparticle Bulk Heterojunction Solar Cells

The charge separation and transport dynamics in CdSe nanoparticle:poly(3‐hexylthiophene) (P3HT) blends are reported as a function of the shape of the CdSe‐nanoparticle electron acceptor (dot, rod, and tetrapod). For optimization of organic photovoltaic device performance it is crucial to understand the role of various nanostructures in the generation and transport of charge carriers. The sample processing conditions are carefully controlled to eliminate any processing‐related effects on the carrier generation and on device performance with the aim of keeping the conjugated polymer phase constant and only varying the shape of the inorganic nanoparticle acceptor phase. The electrodeless, flash photolysis time‐resolved microwave conductivity (FP‐TRMC) technique is used and the results are compared to the efficiency of photovoltaic devices that incorporate the same active layer. It is observed that in nanorods and tetrapods blended with P3HT, the high aspect ratios provide a pathway for the electrons to move away from the dissociation site even in the absence of an applied electric field, resulting in enhanced carrier lifetimes that correlate to increased efficiencies in devices. The processing conditions that yield optimum performance in high aspect ratio CdSe nanoparticles blended with P3HT result in poorly performing quantum dot CdSe:P3HT devices, indicating that the latter devices are inherently limited by the absence of the dimensionality that allows for efficient, prolonged charge separation at the polymer:CdSe interface.     

High‐Efficiency Organic Solar Cells Based on Preformed Poly(3‐hexylthiophene) Nanowires

Bulk heterojunction solar cells based on blends of poly(3‐hexylthiophene) (P3HT) and phenyl‐C61‐butyric acid methyl ester (PC₆₁BM) are fabricated using self‐assembled P3HT nanowires in a marginal solvent without post‐treatments. The interconnected network structures of self‐organized P3HT nanowires create continuous percolation pathways through the active layer and contribute to enhanced carrier mobility. The morphology and photovoltaic properties are studied as a function of ageing time of the P3HT precursor solution. Optimal photovoltaic properties are found at 60 h ageing time, which increases both light absorption and charge balance. Multilayered solar cells with a compositionally graded structure are fabriacted using preformed P3HT nanowires by inserting a pure P3HT donor phase onto the hole‐collecting electrode. Applying optimized annealing conditions to the P3HT buffer layer achieves an enhanced hole mobility and a power conversion efficiency of 3.94%. The introduction of a compositionally graded device structure, which contains a P3HT‐only region, reduces charge recombination and electron injection to the indium tin oxide (ITO) electrode and enhances the device properties. These results demonstrate that preformed semiconductor nanowires and compositionally graded structures constitute a promising approach to the control of bulk heterojunction morphology and charge‐carrier mobility.     

Efficient Polymer Solar Cells Based on Poly(3‐hexylthiophene):Indene‐C70 Bisadduct with a MoO3 Buffer Layer

Polymer solar cells (PSCs) with poly(3‐hexylthiophene) (P3HT) as a donor, an indene‐C₇₀ bisadduct (IC₇₀BA) as an acceptor, a layer of indium tin oxide modified by MoO₃ as a positive electrode, and Ca/Al as a negative electrode are presented. The photovoltaic performance of the PSCs was optimized by controlling spin‐coating time (solvent annealing time) and thermal annealing, and the effect of the spin‐coating times on absorption spectra, X‐ray diffraction patterns, and transmission electron microscopy images of P3HT/IC₇₀BA blend films were systematically investigated. Optimized PSCs were obtained from P3HT/IC₇₀BA (1:1, w/w), which exhibited a high power conversion efficiency of 6.68%. The excellent performance of the PSCs is attributed to the higher crystallinity of P3HT and better a donor–acceptor interpenetrating network of the active layer prepared under the optimized conditions. In addition, PSCs with a poly(3,4‐ethylenedioxy‐thiophene):poly(styrenesulfonate) (PEDOT:PSS) buffer layer under the same optimized conditions showed a PCE of 6.20%. The results indicate that the MoO₃ buffer layer in the PSCs based on P3HT/IC₇₀BA is superior to that of the PEDOT:PSS buffer layer, not only showing a higher device stability but also resulting in a better photovoltaic performance of the PSCs.