Dielectric and microstructural properties of barium titanate hafnate thin films

Barium titanate hafnate (BaTi_1−xHf_xO₃, 0 ≤ x ≤ 0.25) thin films have been deposited by a chemical solution method on copper foil substrates. The films were crystallized at 900 °C and in a reducing atmosphere to prevent substrate oxidation. Perovskite phase formation was identified for each composition, accompanied by an increased pseudocubic lattice parameter. Temperature dependent dielectric measurements revealed a decreasing phase transition temperature and peak permittivity with increasing hafnium level. The decrease in permittivity resulted from grain size reduction with increasing hafnium content. Compositions containing 25 mol% barium hafnate display a deviation from Curie-Weiss behavior indicating the onset of relaxor behavior.     

Electrical properties of sol-gel processed barium titanate films

The sol-gel technique has been used to prepare ferroelectric barium titanate (BaTiO₃) films. The electrical properties of the films have been investigated systematically. The room temperature dielectric constant (ε) and loss tangent (tanδ) at 1 kHz were respectively found to be 370 and 0.012. Both ε and tanδ showed anomaly peaks at 125°C. The room temperature remanant polarization (P_r) and coercive field (E_c) were found to be 3.2 μC/cm² and 30 kV/cm, respectively. The capacitance–voltage (C–V) and conductance–voltage (G–V) characteristics also showed hysteresis effect. The temperature variation of C–V and G–V characteristics also confirms the ferroelectric to paraelectric phase transition at 125°C.     

Synthesis, characterization and dielectric properties of europium-doped barium titanate nanopowders

Europium-doped cubic barium titanate (BT) nanocrystals with % [Eu/Ti] mol ratio varying from 0.05 to 0.25 were prepared through hydrothermal route. The nano nature of these powders was confirmed by XRD and TEM studies. Pellets were prepared after calcining the powders at 1000 °C for 2 h. These pellets were annealed at 200, 500, 700 and 1000 °C for 2 h at each temperature and used for dielectric measurements. Raman spectra of two typical pellets with %[Eu/Ti] Eu/Ti mol ratios of 0.15 and 0.25 showed all the peaks characteristic of tetragonal BaTiO₃. Pure BT showed a low dielectric constant (DC) with a value of 398. Doping with small amounts of Eu resulted in many fold increase of DC values. A maximum value of 10576 at 1 KHz frequency was observed for the sample with % [Eu/Ti] mol ratio of 0.15. Lowering of Curie temperature T_c (95 to 110 °C) was observed for pure as well as Eu-doped barium titanate.     

Microwave synthesis of nano-sized barium titanate

Nano-sized barium titanate powders have been synthesized by microwave processing at 2.45 GHz. Using barium titanyl oxalate (BTO) as a precursor, microwave processing was carried out by heating the precursor to a temperature between 600 °C and 750 °C with different heating rates from 10 °C/min to 20 °C/min without isothermal holding. X-ray diffraction analysis indicates that the decomposed product at 680 °C was pure cubic BaTiO₃. The BET specific surface area of barium titanate powder, after microwave heating to 680 °C, was 14.2 ± 0.5 m²/g, corresponding to an average particle size of 70 nm. This particle size was confirmed by the scanning electron microscopy (SEM). Parallel study shows that the conventional heating in a regular resistance furnace using a similar heating schedule did not result in complete conversion of BTO. This study shows that the microwave processing significantly accelerated the decomposition of barium titanyl oxalate and reduced the temperature of barium titanate nano-powder formation, resulting in nano-sized pure cubic barium titanate powder.     

Low temperature fabrication of barium titanate hybrid films and their dielectric properties

A method for incorporating BT nano-crystalline into barium titanate (BT) films is proposed for a low temperature fabrication of high dielectric constant films. BT nanoparticles were synthesized by hydrolysis of a BT complex alkoxide in 2-methoxyethanol (ME)/ethanol cosolvent. As the ME volume fraction in the cosolvent (ME fraction) increased from 0 to 100%, the particle and crystal sizes tended to increase from 13.4 to 30.2 nm and from 15.8 to 31.4 nm, respectively, and the particle dispersion in the solution became more improved. The BT particles were mixed with BT complex alkoxide dissolved in an ME/ethanol cosolvent for preparing a precursor solution that was then spin-coated on a Pt substrate and dried at 150 °C. The dielectric constant of the spin-coated BT hybrid film increased with an increase in the volume fraction of the BT particles in the film. The dissipation factor of the hybrid film tended to decrease with an increase in the ME fraction in the precursor solution. The hybrid film fabricated at a BT fraction of 30% and an ME fraction of 25% attained a dielectric constant as high as 94.5 with a surface roughness of 14.0 nm and a dissipation factor of 0.11.     

Synthesis and properties of barium titanate stannate thin films by chemical solution deposition

Barium titanate stannate (BaTi_1−x Sn _x O₃, 0 ≤ x ≤ 0.25) thin films were deposited directly on copper foil substrates via a chelate chemical solution process. The films were subsequently crystallized in a reducing atmosphere such that substrate oxidation was avoided and that the 2-valent state of tin could be stabilized. Despite the stabilization of the low-melting temperature SnO oxidation state at high temperatures, the final grain size was smaller with increased tin incorporation similar to other B-site substituted BaTiO₃ films. Temperature and field-dependent dielectric measurements revealed a reduction in dielectric constant and dielectric tuning with increasing tin concentration. The reduction in permittivity with reduced grain size is consistent with the well-known trends for ceramic barium titanate and in combination with a defect-dipole model involving Sn acceptors, can be used to explain the experimental trends. Phase transition frequency dependence was studied and for compositions containing up to 25 mole percent tin. No phase transition dispersion was observed and thus no strong evidence of relaxor-like character. The phase transition became increasingly diffuse with deviation from Curie–Weiss behavior, but the observed transition temperatures agreed well with bulk reference data.     

钛酸锶钡(BST)薄膜的介电性能研究

采用射频磁控溅射法制备了BaxSr1-xTiO2（简称BST）薄膜材料,研究了不同膜厚,晶粒尺寸的BST薄膜的介电系数温度特性（ε1-T),频率特性（ε-r-f),电压特性（εr-U)及损耗的温度特性（tgδ-T),频率特性（tgδ-f),找出了BST薄膜的非线性,损耗随尺度变化的规律。     

钛酸锶钡/硅纳米孔柱阵列复合薄膜的制备及电学性能

采用溶胶-凝胶技术制备了钛酸锶钡薄膜(Ba0.7Sr0.3TiO3,BST)/硅纳米孔柱阵列(Si-NPA)复合薄膜,扫描电镜显示BST均匀地覆盖在Si-NPA衬底的柱状表面,X射线衍射研究表明BST在600℃及以上退火温度下可形成钙钛矿相结构。剩余极化强度(Pr)和矫顽场(Ec)随着温度的升高而增大,在800℃退火温度下分别对应于4.57μC/cm2和7.61kV/mm。机理研究表明,肖特基发射和空间电荷限制电流两种机理共同作用于该薄膜材料的漏电流形成过程。     

Preparation and optical characterization of lanthanum modified lead zirconate titanate thin films on indium-doped tin oxide-coated glass substrate

Lanthanum modified lead zirconate titanate (PLZT) thin films were fabricated on indium-doped tin oxide (ITO)-coated glass substrate by sol-gel method. The structure of the films was characterized with X-ray diffraction and scanning electron microscopy. The optical properties were investigated in the wavelength range of 220-2400 nm. The sample was modelled as a three layer structure on finite substrate, and optical constants of this system were calculated from the transmission and reflection spectra. The calculated dielectric function was fitted with the Drude model in the case of ITO and a sum of Lorentzian oscillators in the case of PLZT films. For PLZT film the anomalous behaviour of imaginary part of dielectric function was observed below the absorption edge. The possible reasons of that behaviour were discussed.     

Composition dependence of structural and optical properties of Ba(Zrx,Ti1-x)O3 thin films grown on MgO substrates by pulsed laser deposition

Ba(Zr_x,Ti_1-x)O₃ (BZT) films with Zr concentration ranging from 0 to 40% were grown on MgO single crystal substrates by pulsed laser deposition, and their optical properties in the visible range were systematically characterized. A linear increase in the out-of-plane lattice constant of BZT unit cell with increasing Zr content was detected by X-ray diffraction. The surface morphology was observed by atomic force microscopy and the grain size was shown to increase with Zr concentration. Prism coupling and UV-visible transmission spectroscopy techniques were used to analyze the optical properties of the films. Refractive index between 2.15 and 2.3 was observed at 633 and 1547 nm respectively, which decreased with rising Zr content. The BZT films also possessed large optical band gap energy up to 3.92 eV, which increased with rising Zr content. Quadratic electro-optic effect was observed with electro-optic coefficients between 0.11 and 0.81 × 10^− 18 m²/V², which decreased with Zr concentration. Optical loss was estimated from scattering and absorption, and the absorption coefficient dropped with increasing Zr content at near band gap. The obtained results provide information for the design of BZT thin film-based optical devices.     

Structural and optical properties of CdS thin films grown by chemical bath deposition

Cubic cadmium sulphide (CdS) thin films with (111) preferential orientation were prepared by chemical bath deposition (CBD) technique, using the reaction between NH₄OH, CdSO₄ and CS(NH₂)₂. The films properties have been investigated as a function of bath temperature and deposition time. Structural properties of the obtained films were studied by X-ray diffraction analysis. The structural parameters such as crystallite size have been evaluated. The transmission spectra, recorded in the UV visible range reveal a relatively high transmission coefficient (70%) in the obtained films. The transmittance data analysis indicates that the optical band gap is closely related to the deposition conditions, a direct band gap ranging from 2.0 eV to 2.34 eV was deduced. The electrical characterization shows that CdS films' dark conductivities can be controlled either by the deposition time or the bath temperature.     

Electrical and optical properties of copper-complexes thin films grown by the vacuum thermal evaporation technique

In this work, the synthesis and characterization of molecular materials formed from K₂[Cu(C₂O₄)₂], 1,8-dihydroxyanthraquinone and its potassium salt are reported. These complexes have been used to prepare thin films by vacuum thermal evaporation. The synthesized materials were characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), fast atomic bombardment (FAB+) mass and ultraviolet–visible (UV–vis) spectroscopy. Electrical transport properties were studied by dc conductivity measurements. The electrical activation energies of the complexes, which were in the range of 0.36–0.65 eV, were calculated from their Arrhenius plots. Optical absorption studies in the 100–1100 nm wavelength range at room temperature showed thin films' optical band gaps in the 2.3–3.9 eV range for direct transitions. On the other hand, strong visible photoluminescence (PL) at room temperature was noticed from the thermally-evaporated thin solid films. The PL of all investigated samples were observed with the naked eye in a bright background. The PL and absorption spectra of the investigated compounds are strongly influenced by the molecular structure and nature of the organic ligand.     

Intrinsic optical and structural properties of SrS thin films

SrS thin films were deposited by electron beam evaporation on heated silica substrates. The optical properties of the layers – complex refractive index and optical band gap –were derived from optical transmission spectra, measured by means of UV-VIS-NIR spectrophotometry. The influence of post-deposition annealing by rapid thermal processing (RTP) was studied. X-ray powder diffraction (XRD) was used to study the film crystal structure and preferential orientation.     

Electrical and optical properties of ZnO:Mn thin films grown by MOCVD

Diluted magnetic semiconductor epitaxial thin films of Zn_1 − xMn_xO have been grown on c-sapphire by the MOCVD technique. Variations of a and c lattice parameters follow Vegard's law and attest to the incorporation of substitutional Mn²⁺ ions. Carrier concentration (n-type) and electron mobility were studied versus temperature for different concentrations of manganese. Incorporation of manganese leads to the opening of the band gap, observed as a blue shift in energy regarding pure ZnO.     

Rare-earth ions doping effects on the optical properties of sol-gel fabricated PbTiO3 thin films

Ce, Sm, Dy, Er and Yb doped PbTiO₃ thin films were deposited by sol-gel method on (111)Pt/Ti/SiO₂/Si substrates. The optical properties of the films were characterized by means of ellipsometry using a HeNe-laser source (λ=632.8 nm). Real (n) and imaginary (k) parts of the refractive index were obtained applying the Fresnel equation. It is shown that for lead titanate thin films doped with 2 mol.% of lanthanide (Ln) ions the real part of the refractive index decreases smoothly with increasing atomic number of the element, with the exception of the Ce doped film. The experimental results are explained taking into account the electronic structure of the dopants. Specific results of Ce are explained by its oxidation state, which has been shown by means of X-ray photoelectron spectroscopy to be +4. Additionally, noticeable correlation of the optical properties of the films with respect to doping level was observed.     

Electrical and optical switching properties of ion implanted VO2 thin films

The metal-insulator transition in vanadium dioxide thin films implanted with O⁺ ions was studied. Ion implantation lowered the metal-insulator transition temperature of the VO₂ films by 12 °C compared to the unimplanted ones, as measured both optically and electrically. The lowering of the transition temperature was accomplished without significantly reducing the mid-wave infrared optical transmission in the insulating state for wavelengths > 4.3 μm. Raman spectroscopy was used to examine changes to the crystalline structure of the implanted films. The Raman spectra indicate that ion implantation effects are not annealed out for temperatures up to 120 °C.     

Physical and electromechanical properties of barium zirconium titanate synthesized at low-sintering temperature

Barium zirconium titanate or (Ba(Zr_xTi_1 − x)O₃, BZT) was prepared using homogeneous BZT powders derived from a sol-gel process. With a sintering aid, the firing temperature for the BZT ceramics was lower by about 30%, meanwhile, the electromechanical properties of the material were not degraded. Crystallographic phases of the BZT system were identified by the XRD data and Raman spectra and we found that the orthorhombic-perovskite BZT ceramic with x = 0.05 has the best dielectric and piezoelectric properties.     

Preparation and optical properties of gold nanoparticles embedded in barium titanate thin films

High amount of gold nanoparticles was successfully incorporated into amorphous BaTiO₃ thin films by sol-gel process. Thiourea was applied to prevent Au ions from being reduced and aggregating as the effective stabilization agents. These films exhibited unique surface plasma resonance red-shifting and particular changes of surface plasma resonance intensity with the increase of heat-treating temperature, which could be attributed to the influence of BaTiO₃ ferroelectric domains. The films also exhibited superfast nonlinear optical response and larger third-order nonlinear susceptibility ⁽³⁾, which was attributed to hot electron contribution.     

Microstructure and optical properties of plasmapolymer thin films with embedded silver nanoparticles

Plasmapolymer thin films with embedded silver nanoparticles were deposited by simultaneous plasma polymerization and metal evaporation. The particle size and shape were determined by transmission electron microscopy (TEM) and analysed by optical image processing. The optical properties in the UV/ VIS/NIR spectral region were determined by the plasma resonance absorption of the silver particles. Transmittance spectra were calculated with the Bergman effective medium theory and compared with experimental spectra.     

Effect of cadmium oxide incorporation on the microstructural and optical properties of pulsed laser deposited nanostructured zinc oxide thin films

CdO doped (doping concentration 0, 1, 3 and 16 wt%) ZnO nanostructured thin films are grown on quartz substrate by pulsed laser deposition and the films are annealed at temperature 500 °C. The structural, morphological and optical properties of the annealed films are systematically studied using grazing incidence X-ray diffraction (GIXRD), energy dispersive X-ray analysis (EDX), scanning electron microscopy (SEM), atomic force microscopy (AFM), Micro-Raman spectra, UV–vis spectroscopy, photoluminescence spectra and open aperture z-scan. 1 wt% CdO doped ZnO films are annealed at different temperatures viz., 300, 400, 500, 600, 700 and 800 °C and the structural and optical properties of these films are also investigated. The XRD patterns suggest a hexagonal wurtzite structure for the films. The crystallite size, lattice constants, stress and lattice strain in the films are calculated. The presence of high-frequency E₂ mode and the longitudinal optical A₁ (LO) modes in the Raman spectra confirms the hexagonal wurtzite structure for the films. The presence of CdO in the doped films is confirmed from the EDX spectrum. SEM and AFM micrographs show that the films are uniform and the crystallites are in the nano-dimension. AFM picture suggests a porous network structure for 3% CdO doped film. The porosity and refractive indices of the films are calculated from the transmittance and reflectance spectra. Optical band gap energy is found to decrease in the CdO doped films as the CdO doping concentration increases. The PL spectra show emissions corresponding to the near band edge (NBE) ultra violet emission and deep level emission in the visible region. The 16CdZnO film shows an intense deep green PL emission. Non-linear optical measurements using the z-scan technique indicate that the saturable absorption (SA) behavior exhibited by undoped ZnO under green light excitation (532 nm) can be changed to reverse saturable absorption (RSA) with CdO doping. From numerical simulations the saturation intensity (I_s) and the effective two-photon absorption coefficient (β) are calculated for the undoped and CdO doped ZnO films.