用气液固相互反应方法生长线状硅晶研究

以ＳｉＨ４为生长气源,利用ＶＬＳ（气相－液相－固相）互反应生长机制,在ＲＴ－ＣＶＤ生长设备上通过向（１１１）硅衬底表面引入Ａｕ,生长出长达数个微米而直径小于１μｍ的垂直于衬底表面的线状晶体。对生长出的线状晶体作了扫描电镜观察,并分析讨论了生长的异常现象。     

AIN-多型体对形成长颗粒α-Sialon的影响

通过ＳＥＭ、ＥＤＳ等方法，研究了添加不同含量ＡＩＮ－多型体对（Ｙ＋Ｓm）－α－Ｓｉａｌｏｎ晶粒形貌的影响．结果表明，随ＡＩＮ－多型体添加量增多，材料中长颗粒α－Ｓｉａｌｏｎ的数量增加．本文对ａ’－ＡＩＮ－多型体两相区内长颗粒α－Ｓｉａｌｏｎ的形成机理进行了讨论．     

等离子体辅助反应式脉冲激光熔蚀制备AIN薄膜的低温生长

使用等离子体辅助反应式脉冲激光溅射沉积薄膜的方法在Ｓｉ（１１１）和Ｓｉ（１００）基片上已经成功地低温制备出ＡＩＮ多晶膜。实验表明,当脉冲能量密度ＤＥ＝１．０Ｊ·ｃｍ＾－２,脉冲频率ｆ＝５Ｈｚ,氮气气压ＰＮ２＝１．３３×１０＾４Ｐａ,基底温度ｔｓｕｂ＝２００℃,放电电压Ｖ＝６５０,基靶距离ｄｓ－Ｔ＝４ｃｍ时薄膜的生长速度等于６ｎｍ／ｍｉｎ。ＡＩＮ薄膜的折射率为２．０５,和基底的取向关系分别为：ＡＩＮ     

QUINDOS语言系统的应用与功能开发

本介绍ＱＵＩＮＤＯＳ系统的几个应用问题及其解决方法。介绍了两项已开发的新功能，ＶＡＸ机与ＰＣ机的联机通信了ＶＭＳ软盘格式不兼容的问题；屏显图形功能实现了用ＰＣ机的ＶＧＡ屏幕作为ＱＵＩＮＤＯＳ系统的一个图形终端，直接屏显各种测量结果图形。     

MOCVD外延生长Ga_(1-x)Al_xAs_(1-y)Sb_y半导体薄膜气固平衡和人工神经网络预报

本文研究了ＭＯＣＶＤ外延生长Ｇａ１－ｘＡｌｘＡｓ１－ｙＳｂｙ半导体薄膜的生长条件与外延层组成的关系，并用人工神经网络法总结有关气固平衡规律。结果表明，用气相组成，载气流量和生长温度等影响外延层组成的主要参数作为人工神经网络的输入，以固相Ｇａ１－ｘＡｌｘＡｓ１－ｙＳｂｙ中的Ａｌ和Ｓｂ的含量ｘ、ｙ作为输出，训练的人工神经网络可以预报固相组成ｘ、ｙ，得到满意结果。     

SI—GaAs中的EL2和EL6缺陷团簇相关性研究

用光致电流瞬态谱（ＰＩＴＳ）方法研究了ＬＥＣＳＩ－ＧａＡｓ原生单晶经常规退火和等时快速退火（ＲＴＡ）深能级缺陷的变化。缺陷ＥＬ２（Ｅｃ－０．８２ｅＶ）ＥＬ１２（Ｅｃ－０．７９ｅＶ）表现出类似的ＲＴＡ特性，应属于ＥＬ２缺陷团簇；缺陷ＥＬ６（Ｅｃ－０．３８ｅＶ），ＥＬ８（Ｅｃ－０．２７ｅＶ）和ＥＬ９（Ｅｃ－０．２４ｅＶ０亦具有相似的ＲＴＡ特性，属ＥＬ６缺陷团簇。实验发现，在热退火中，ＥＬ２团簇缺陷密度     

应用带HSV－TK基因的重组腺病毒的肺癌基因治疗的研究

带有单纯疱疹病毒脱氧胸苷激酶基因（ＨＳＶ－ｔｋ）的腺病毒结合ｇａｎｃｉｃｌｏｖｉｒ（ＧＣＶ）对分裂细胞有很强的杀伤作用。本文报道在感染复数（Ｍ．Ｏ．Ｉ,ＭｕｌｔｉＰｌｉｃｉｔｙｏｆＩｎｆｅｃｔｉｏｎ）达到１０００时对人体肺腺癌细胞Ａ５４９的杀伤几乎达到回１００％。四种人体肺癌细胞株（Ａ５４９,ＬＡＸ,ＳＰＣ,ＳＫＹ）对带ＨＳＶ－ｔｋ的腺病毒（ＡＤＶ／ＲＳＶ－ｔＫ）的杀伤作用表现不同的敏感性。另外,Ａｃｙｃｌｏｖｉｒ（ＡＣＶ）和ＧＣＶ对感染了重组腺病毒ＡＤＶ／ＲＳＶ－ｔＫ的细胞都有一定杀伤作用,但杀伤效果有很大差别;就Ａ５４９而言,ＧＣＶ的杀伤作用比ＡＣＶ高７—８倍。此外ＡＤＶ／ＲＳＶ－ｔｋ结合ＧＣＶ杀伤肿瘤细胞时有“旁观者效应”,即感染了ＡＤＶ／ＲＳＶ－ｔｋ的细胞与未感染细胞混合后,后者也明显地遭到杀伤。     

MOCVD外延生长Ga1—xAlAs1—ySby半导体薄膜气固平衡和人工神经网络预报

本文研究了ＭＯＣＶＤ外延生长Ｇａ１－ｘＡｌｘＡｓ１－６Ｓｂｙ半导体薄膜的生长条件与外延层组成的关系，并用人工神经网络法总结有关气固平衡规律。结果表明，用气相组成，载气流量和生长等影响外延层组成的主要参数作为人工神经网络的输入，以固相Ｇａ１－ｘＡｌｘＡｓ１－ｙＳｂｙ中的Ａｌ和Ｓｂ的含量ｘ、ｙ作为输出，训练的人工神经网络可以预报固相组成ｘ、ｙ，得到满意结果。     

升华再结晶法制备AIN晶须及其生长特性

以ＡｌＮ粉体为原料，加入适量的ＣａＯ－Ｂ２Ｏ３矿化剂，采用升华再结晶法制备ＡｌＮ晶须，初步探讨了反应器及其合成温度对产物的种类的影响，研究了晶须的结构特征及其生长机理，结果表明，初期的合成产物包括ＡＬＮ晶柱、晶须和非晶ＡｌＮ纤维，以ＶＬＳ机制生长；后期产物为ＡｌＮ晶须，表现为ＶＳ生长机制：ＸＲＤ及ＴＥＭ分析表明，晶须大多呈现沿（２１１０）、（１０１ｌ）和（０００１），ｌ＝０、１、２、３的晶面生长，     

SiO_2-AIN 复合材料的介电性能

热压烧结制备了ＳｉＯ２－ＡＩＮ复合材料,研究了烧结温度、第二相颗粒ＡＩＮ的引入量对ＡＩＮ颗粒补强ＳｉＯ２基复合材料介电性能的影响．结果说明：随着热压温度的提高,复合材料的介电常数增加,介电损耗减少;在一定的热压温度下,复合材料的介电常数和介电损耗随第二相颗粒ＡＩＮ的引入量的增加而增加。１ＭＨｚ时１０ｖｏｌ％ＡＩＮ－ＳｉＯ２复合材料的介电常数和介电损耗分别为４．１和９．０ｘ１０－４。从复合材料的组成和结构角度对以上结果予以解释。     

Morphology-Controlled Growth of AIN One-Dimensional Nanostructures

Aluminum nitride (AIN) nanowires, serrated nanoribbons, and nanoribbons were selectively obtained through a simple chloride assisted chemical vapor deposition process. The morphologies of the products could be controlled by adjusting the deposition position and the flux of the reactant gas. The morphologies and structures of the AIN products were investigated in detail. The formation mechanism of the as-prepared different morphologies of AIN one-dimensional (1D) nanostructures was discussed on the basis of the experimental results.     

Arc-Discharge Synthesis and Microstructure Characterization of AlN Nanowires

AIN nanowires with a hexagonal structure were synthesized using an improved arc-discharge method and their microstructures were characterized using a high-resolution transmission electron microscope. The synthesized AIN nanowires were of various shapes. Their diameters ranged from 20 to 110 nm and the lengths were up to 20μm. Most of the AIN nanowires were coated by an amorphous layer of aluminum oxide. Fabrication yield was about several grams. The growth mechanism was considered to be a vapor-liquid-solid process and an Al droplet formed on the top of as-grown AIN nanowire played a role of catalyst.     

碳热还原法合成AIN晶须及其生长机理

以Al2O3和石墨为原料，采用碳热还原法制备AIN晶须.研究了矿化剂的种类及温度等工艺对AIN晶须合成的影响结果表明，以CaF2和B2O3为矿化剂的AIN品须是以VLS机制生长的，高温下VLS机制可以转变为VS机制，同时存在两维成核及螺位错生长过程，晶须生长方向大多呈{101n}，（n=0，1，2，3）及{121m}，（m=0，1；2）的晶面生长     

氮气压对自蔓延高温合成AlN后烧的影响

研究了氮气压力对自蔓延高温合成AlN的影响和后烧机理.结果表明,自蔓延高温合成AlN的生长机制为气相-晶体(Vapor-Crystal,VC)机制.气相沉积的台阶平面为AlN的基面({0001)面).为了降低表面能,生长台阶必须以六棱柱形态形核.在后烧阶段,AlN颗粒中心的小台阶被重新"蒸发",并沉积到远离中心的大台阶上,使AlN颗粒棱角分明,形状规则.随着氮气压力的增加,燃烧温度逐渐提高,后烧的时间缩短.     

升华再结晶法制备AIN晶须及其生长特性

以AIN粉体为原料，加入适量的CaO-B2O3矿化剂，采用升华再结晶法制备AIN晶须．初步探讨了反应器及其合成温度对产物种类的影响，研究了晶须的结构特征及其生长机理．结果表明，初期的合成产物包括AIN晶柱、晶须和非晶AIN纤维，以VLS机制生长：后期产物为AIN晶须，表现为VS生长机制：XRD及TEM分析表明，晶须大多呈现沿｛2110｝、｛101l｝和｛0001｝，l＝0、1、2、3的晶面生长．多数晶须宏观生长轴向平行于这些晶面的法线，而部分晶须由于发生斜生长，导致宏观生长轴向与这些晶面的法线斜交．     

Combination of e-beam lithography and of high velocity AIN/diamond-layered structure for SAW filters in X band

In this work, we report on the fabrication results of surface acoustic wave (SAW) devices operating at frequencies up to 8 GHz. In previous work, we have shown that high acoustic velocities (9 to 12 km/s) are obtained from the layered AIN/diamond structure. The interdigital transducers (IDTs) made of aluminium with resolutions up to 250 nm were successfully patterned on AIN/diamond-layered structures with an adapted technological process. The uniformity and periodicity of IDTs were confirmed by field emission scanning electron microscopy and atomic force microscopy analyses. A highly oriented (002) piezoelectric aluminum nitride thin film was deposited on the nucleation side of the CVD diamond by magnetron sputtering technique. The X-ray diffraction effectuated on the AIN/diamond-layered structure exhibits high intensity peaks related to the (002) AIN and (111) diamond orientations. According to the calculated dispersion curves of velocity and the electromechanical coupling coefficient (K2), the AIN layer thickness was chosen in order to combine high velocity and high K2. Experimental data extracted from the fabricated SAW devices match with theoretical values quite well.     

碳热还原法生成AlN晶须的形貌及结晶方向

在用碳热还原法制备ＡｌＮ粉未过程中，发现大量白色ＡｌＮ晶须存在于ＡｌＮ粉末坯体表面某形貌有直板状、锯齿状及抿曲状，电子衍射花斑显示结晶方向均为（０００２），其生长机理可能为ＶＳ机制。     

One dimensional aluminum nitride nanostructures: synthesis, structural, and luminescence properties

Aluminum nitride (AIN) is a direct bandgap semiconductor with a bandgap about 6.1 eV at room temperature, the largest among semiconductors. This paper emphasizes experimental results of the growth and optical properties of AIN nanostructures by direct nitridation. The nitridation process was performed by chemical vapor deposition method with nitrogen (N2) gas flow. AIN nanostructures were analyzed by scanning electron microscope (SEM) equipped with energy-dispersive X-ray (EDX) spectroscope and photoluminescence (PL) spectroscopy. AIN nanowires with different widths from ultrathin to thick were synthesized with this method. All of the samples had high purity without presence of any other material in EDX spectrum. The PL spectra were obtained by a 325-nm helium-cadmium (He-Cd) laser as the excitation source showing high-intensity light emitting visible wavelengths for these structures at room temperature.     

The effects of nitrogen bonding on hardness of AIN/CrN multilayer hard coatings

AIN/CrN multilayer hard coatings with various bilayer thicknesses were fabricated by a reactive sputtering process. The microstructural and mechanical characterizations of multilayer coatings were investigated through transmission electron microscope (TEM) observations and the hardness measurements by nano indentation. In particular, the variation of chemical bonding states of the bilayer nitrides was elucidated by near edge X-ray absorption fine structure (NEXAFS) spectroscopy. Many broken nitrogen bonds were formed by decreasing the bilayer thickness of AIN/CrN multilayer coatings. Existence of optimum AIN/CrN multilayer coatings thickness for maximum hardness could be explained by the competition of softening by the formation of broken nitrogen bonds and strengthening induced by decreasing bilayer thickness.     

自蔓延高温合成(SHS)氮化铝反应机制的研究

本文采用自行设计的铝箔包覆淬火新方法,获得了自蔓延高温合成AlN过程中不同阶段的燃烧产物,通过SEM观察和热力学分析,研究了自蔓延高温合成氨化铝的反应机制．研究结果表明,自蔓延高温合成氮化铝的形成过程是铝蒸发后,铝蒸气与氮气反应,最终形成氨化铝．其形成过程以VC机制为主．