基于混合曝光技术的新型亚微米图形制作方法

提出了一种基于投影式光刻机和电子束光刻机混合曝光技术的新型亚微米图形制作方法,该方法可用于制作对精度要求比较高的亚微米图形。具体的做法是将亚微米图形分解成高精度图层和普通精度图层,并将两个图层分别采用电子束直写和投影式光刻机依次在同一层光刻胶曝光后,经过一次显影得到完整图形。通过该方法不仅可以大幅减少采用电子束直写亚微米图形所需的时间,还可以有效地保证图形的线宽精度。从图形的数据处理和实验制作两个方面,详细地介绍了采用该方法在硅衬底上制作SU-8亚微米图形的过程。经SEM测试得出,本方法制作的图形尺寸精度和棱角的锐度都非常精确,可比较理想地实现设计者的设计要求。     

亚微米电子束曝光机镜筒光路与结构

介绍了亚微米电子束曝光机光路与结构设计，该电子光学系统采用透镜内偏转设计，系统象差小，偏转灵敏度高，工件面上电流密度大，通过调试和使用，电子束流、最小电子束斑直径等主要设计指标均达要求。     

亚微米接触式X射线曝光对准系统

介绍了接触式X射线曝光对准系统的设计原理,对其关键部分（精密调整台、微位移控制、对准光学系统等）做了详细阐述,并进行了系统的精度分析。     

一种制作亚微米线条的有效方法

本文介绍利用普通接触式曝光系统和等离子刻蚀机来制作亚微米线条。基本工艺是用深紫外线作为光源，对曝光后的光刻胶在ＨＭＤＳ或ＴＭＤＳ气氛下加热处理，然后采用氧反应离子刻蚀，结果可得到０．７微米的光刻胶线条，其端面完整、侧壁陡直，非常适合于大规模集成电路制造中的剥离工艺。     

亚微米电子束曝光机激光工件台位置显示系统

介绍了工件台位置显示系统的组成,工作原理及软件设计。由于采用单片机控制技术,从而保证了系统的显示精度和运行可靠性。     

DY－5型亚微米电子束曝光机

本文介绍了ＤＹ－５型亚微米电子束曝光机的主要技术性能：最细特征线宽０．４μｍ；图形位置精度及拼接精度优于±０．１５μｍ；扫描场尺寸１×１ｍｍ２和２×２ｍｍ２；最高扫描速度１ＭＨｚ；可加工１００×１００ｍｍ２掩模版或Φ７５硅圆片。给出了部分曝光试验结果。     

微米／亚微米测试校正版的研制及测试

本文主要阐述研制微米／亚微米测试校正版的意义，在研制过程中解决电子束邻近效应、拼接校正、等离子刻蚀、测试技术等几个关键技术问题。完成了多功能、大范围、高精度、边缘较好的微米／亚微米测试校正版。通过测试、分析可以应用于各单位的条宽测量仪器的校正，解决了CD尺寸测试中存在的系统误差问题。这项技术对我公司以及外协单位条宽测试仪的CD尺寸值统一有着重大意义。     

Mos and schottky diode gas sensors using transition metal electrodes

MOS and Schottky diode devices with various gate metals and semiconductor substrates were used as sensitive detectors of hydrogen and hydrocarbon based gases. MOS devices were fabricated on n-and p-type silicon substrates with the following gate metals and dielectric materials: Pd-SiO₂, Pd-Ti-SiO₂, Pt-SiO₂, Ni-SiO₂, Pd-Si₃N₄, Pd-Si₃N₄-SiO₂ and Pt-Si₃N₄. In MOS devices with InP substrates, a Pd-Si₃N₄. device was tested. Also, Pdn type InP and Pd-GaAs were used as gaseous detectors in the Schottky barrier configuration. Detection capability of these devices was tested with H₂, CH₄, C₂H₄ and C₄H₁₀ gases. The characteristic parameters of these devices, such as sensitivity limits, adsorption and desorption time constants and linearity of time constants and linearity of response are given and a tentative detection mechanism is presented.     

Comparison of metal gate electrodes on MOCVD HfO2

Metal gate electrodes of sputtered aluminum (Al), titanium nitride (TiN) and nickel aluminum nitride (NiAlN) are investigated in this work. They are compared with respect to their compatibility with metal organic chemical vapor deposited (MOCVD) hafnium dioxide (HfO₂) gate dielectrics. TiN, with a midgap work function of 4.65 eV on SiO₂, exhibits promising characteristics as metal gate on HfO₂. In addition, encouraging results are presented for the ternary metal NiAlN, whereas classic Al electrodes are found unstable in conjunction with HfO₂.     

Semitransparent,thin metal grid-based hybrid electrodes for polymer solar cells

A conducting polymer/thin Au grid hybrid electrode was investigated to replace an indium tin oxide (ITO) electrode in polymer solar cells (PSCs). Semitransparent, thin Au films were combined with transparent conducting PEDOT:PTS films (70 nm thickness, ~90% of transmission), to form Au grid/conducting polymer hybrid electrodes. The mixed self-assembled monolayers coated on the Au grids and glass substrate provided uniform and adherent coating of conducting polymer on the monolayer, achieving a low contact resistance of 0.6 Ω mm. This resulted in a robust PEDOT:PTS/Au grid hybrid structure.Theoretical calculation showed the dependence of figure of merits (FM) on the filling ratio (=grid width/(grid spacing+grid width)) and Au thickness. In addition, grid spacing had an effect on the surface morphology of the conducting polymer; decreasing the grid spacing produced more flat surface of the overlayers, leading to enhanced performance of PSCs. The fabricated PSCs based on these hybrid electrodes showed that the best efficiency of 3.54%, comparable to that of devices based on an ITO electrode, was obtained at the filling ratio of 0.5 for 15 nm-thick Au electrodes, which was different from that predicted from the theoretical calculation, probably due to the grid spacing effects on the charge collection efficiency.     

Quasi-damascene metal gate/high-k CMOS using oxygenation through gate electrodes

We present a novel metal gate/high-k complementary metal–oxide–semiconductor (CMOS) integration scheme with symmetric and low threshold voltage (V_th) for both n-channel (nMOSFET) and p-channel (pMOSFET) metal–oxide–semiconductor field-effect transistors. The workfunction of pMOSFET is modulated by oxygen in-diffusion (‘oxygenation’) through the titanium nitride metal gate without equivalent oxide thickness (EOT) degradation. A significant V_th improvement by 420 mV and an aggressively scaled capacitance equivalent thickness under channel inversion (T_inv) of 1.3 nm is achieved for the pFET by using a replacement process in conjunction with optimized oxygenation process. Immunity of nMOSFET against oxygenation process is demonstrated.     

高性能柔性电极制备及其电化学性能研究

针对柔性电在发生较大形变会发生断裂,导致柔性电子产品失效的问题,提出了全新的柔性电极制备工艺。（1）利用周期性结的可拉伸性制备了一种具有褶皱构的柔性电极,实现了柔性电极在发生形变时仍能保证性能稳定、高可靠性的目标。（2）利用射频磁控溅射工艺制备了具有褶皱结构的柔性电极,实现了制备的柔性电极在30%的形变量时电阻值不会超过1000Ω。实验结果表明：（1）提出的全新制备工艺制备的柔性电极具有一定的可拉伸性;（2）制备的性能最好的柔性电极褶皱周期超过了2.5μm,在20%形变量时电阻值低于200Ω,并且在50次重复拉伸测试中性能不会失效。     

石墨烯电极材料的制备及其在双电层电容器中的应用

综述了目前石墨烯基电极材料的最新研究进展,介绍了化学还原法、活化法、热还原法、凝胶法、插入法等制备双电层电容器用石墨烯基电极材料的物理及化学方法,并对其良好的应用前景及今后的研究方向进行了展望。     

Three-Layer laminated metal gate electrodes with tunable work functions for CMOS applications

This letter presents a novel technique for tuning the work function of a metal gate electrode. Laminated metal gate electrodes consisting of three ultrathin (/spl sim/1-nm) layers, with metal nitrides (HfN, TiN, or TaN) as the bottom and top layers and element metals (Hf, Ti, or Ta) as the middle layer, were sequentially deposited on SiO/sub 2/, followed by rapid thermal annealing annealing. Annealing of the laminated metal gate stacks at high temperatures (800/spl deg/C-1000/spl deg/C) drastically increased their work functions (as much as 1 eV for HfN-Ti-TaN at 1000/spl deg/C). On the contrary, the bulk metal gate electrodes (HfN, TiN and TaN) exhibited consistent midgap work functions with only slight variation under identical annealing conditions. The work function change of the laminated metal electrodes is attributed to the crystallization and the grain boundary effect of the laminated structures after annealing. This change is stable and not affected by subsequent high-temperature process. The three-layer laminated metal gate technique provides PMOS-compatible work functions and excellent thermal stability even after annealing at 1000/spl deg/C.     

尖晶石结构的钴基金属氧化物超级电容器电极材料的研究进展

超级电容器作为一种新型储能转化设备,以其充放电时间短、循环寿命长以及功率大等优点,引起了广泛的关注。超级电容器电极材料是影响其性能的重要因素。具有尖晶石结构的钴基金属氧化物以其优异的电化学性能作为超级电容器的电极材料使用获得了极大的成功。概述了各种钴基金属氧化物的最新进展,如钴酸锌、钴酸锰、钴酸镍等,并对其未来的发展进行了展望。     

常温条件制备金属薄膜样品

一文在上海交通大学产电解双喷制样仪上,通过电解液高氯酸和冰醋酸,对几种金属材料进行了常温下,透射电镜薄膜样品的制备,并获得成功。     

Influence of oxygen diffusion through capping layers of low work function metal gate electrodes

This letter evaluates Ru and W capping layers for MoTa metal gate electrodes in MOS capacitor applications. The authors report that the oxygen diffusion from the capping layer plays an important role in determining the MoTa alloy effective work function value on SiO/sub 2/. A MoTa alloy metal gate with Ru capping exhibits stable effective work function up to 900/spl deg/C annealing but is not stable with W capping. Auger electron spectroscopy and Rutherford backscattering spectroscopy analyses show minimal oxygen diffusion into MoTa gate stacks with Ru capping while severe oxygen diffusion into the gate is observed with W capping metal after 900/spl deg/C annealing. Current-voltage analysis also demonstrates different barrier heights of MoTa on SiO/sub 2/ with Ru or W capping layer after 900/spl deg/C annealing, confirming the effective work function value change.