Formation of low-resistance and transparent indium tin oxide ohmic contact for high-brightness GaN-based light-emitting diodes using a Sn–Ag interlayer

We report on the formation of low-resistance and highly transparent indium tin oxide (ITO) ohmic contacts to p-GaN using a Sn–Ag alloy interlayer. Although the as-deposited Sn–Ag(6 nm)/ITO(200 nm) contacts show non-ohmic behaviors, the scheme becomes ohmic with specific contact resistance of 4.72×10⁻⁴ Ω cm² and produce transmittance of ∼91% at wavelength of 460 nm when annealed at 530 °C. Blue light-emitting diodes (LEDs) fabricated with the Sn–Ag/ITO contacts give forward-bias voltage of 3.31 V at injection current of 20 mA. LEDs with the Sn–Ag/ITO contacts show the improvement of the output power by 62% (at 20 mA) compared with LEDs with Ni/Au contacts.     

Alcohol-soluble polyfluorenes containing dibenzothiophene-S,S-dioxide segments for cathode interfacial layer in PLEDs and PSCs

A series of alcohol-soluble amino-functionalized polyfluorene derivatives (PF-N-S, PF-N-SC8 and PF-N-SOC8) comprising various ratios of dibenzothiophene-S,S-dioxide segments (S/SC8/SOC8) in the main chains, respectively, were synthesized and utilized as cathode interfacial layer (CIL) in polymer light-emitting diodes (PLEDs) and polymer solar cells (PSCs) with high-work-function Al (or Au) electrode. The polymers possess LUMO/HOMO levels at −2.78 to −3.53 eV/−5.69 to −6.32 eV. Multilayer PLEDs and PSCs with device configurations of ITO/PEDOT:PSS (40 nm)/P-PPV or PFO-DBT35:PCBM = 1:2 (80 nm)/CIL (3–15 nm)/Al (or Au) (100 nm) were fabricated. The PF-N-S-10/Al (or Au) cathode PLEDs displayed maximum luminous efficiency of 24.4 cd A⁻¹ (or 11.9 cd A⁻¹), significantly higher than bare Al (or Au) cathode device, exceeding well-known Ba/Al and poly[(9,9-bis(3′-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PFN)/Al (or PFN/Au) cathode devices. The enhanced open-circuit voltages (V_ocs), electron reflux and reduced work functions clarify that the electron injection barrier from the Al (or Au) electrode can be lowered by inserting the polymers as CIL. The resulted PSCs also show device performances exceeding Al and PFN/Al cathode devices. The results indicate that PF-N-S, PF-N-SC8 and PF-N-SOC8 are excellent CIL materials for PLEDs and PSCs with high-work-function Al or Au electrode.     

Highly efficient and high transmittance semitransparent polymer solar cells with one-dimensional photonic crystals as distributed Bragg reflectors

We demonstrate that one-dimensional photonic crystals as distributed Bragg reflectors can effectively improve the performance of semitransparent polymer solar cells (PSCs) based on the blend of P3HT:ICBA. The one dimensional distributed Bragg reflectors (1D DBRs) are composed of N pairs of WO₃/LiF which are thermally evaporated on Ag anode. Due to its photonic bandgap, 1D DBRs can reflect the light totally back into the PSCs when the high reflectance range of 1D DBRs is well matched with absorption spectrum of the active layer. A maximum power conversion efficiency (PCE) of 4.12%, a highest transmittance of 80.4% at 660 nm and an average transmittance of 55.6% in the wavelength range of 600–800 nm are obtained in the case of N = 8, corresponding enhancement of 24.1% in PCE when compared with the device without the 1D DBRs.     

Role of LiF in polymer light-emitting diodes with LiF-modified cathodes

We report on high-efficiency polymer light-emitting diodes (PLEDs) based on poly [2-methoxy-5-(3′,7′-dimethyloctyloxyl)]-1,4-phenylene vinylene (OC1C10) with LiF-modified cathodes. Devices with different cathodes are made and characterized by the electroabsorption technique to measure their built-in voltage. Devices with a LiF/Al bilayer cathode or a LiF:Al composite cathode, all show significantly improved performance as compared to those with bare Al cathodes. The improvement is correlated with enhanced electron injection due to a decrease of the electron injection barrier, which is also indicated by the electroabsorption measurements. The same effect is also observed with LiF(0.6 nm)/Mg cathodes. However, inserting the same LiF thin film between Ag and OC1C10 does not improve the device performance. Cathodes composed of ultra-thin films of LiF(0.6 nm)/Al(1 nm) or LiF:Al(2 nm) covered by Ag (100 nm) show the same performance as LiF(0.6 nm)/Al bilayer cathode or a LiF:Al composite cathode, indicating that the enhancement is specific to LiF and Al. Our experiments can be explained by assuming that Li-ions can dissociate from LiF and diffuse into the OC1C10 layer, leading to an n-type zone close to the polymer/cathode interface. This n-doped layer at the interface facilitates electron injection at the cathode/polymer interface and eventually leads to the formation of an Ohmic contact.     

Iridium-based semi-transparent current spreading layer on short-period-superlattice (SPS) tunneling contact of InGaN/GaN LEDs

Iridium-containing and Ni(4 nm)/Au(6 nm) films were evaporated separately on the n⁺-InGaN–GaN short-period-superlattice (SPS) structure of light-emitting diodes (LEDs). The collective deposition of iridium and other metals as an ohmic contact induces the formation of highly transparent IrO₂, which helps to enhance the light output and decrease the series resistance of LEDs. By comparing different metal films used as current spreading contact layer, Ir/Ni film annealed at 500 °C for 20 min in O₂ ambient renders devices with lowest turn-on voltage at 20 mA and highest luminous intensity. Moreover, we also analyzed films using atomic force microscopy (AFM) with an emphasis on studying how the surface quality of Ir/Ni and Ni/Au films influences the current spreading and luminosity of LEDs.     

Charge injection in metal/organic/metal structures with ZnO:Al/organic interface modified by Zn1−xMgxO:Al layer

Aluminum-doped zinc oxide (ZnO:Al, AZO) electrodes were covered with very thin (∼6 nm) Zn_1−xMg_xO:Al (AMZO) layers grown by atomic layer deposition. They were tested as hole blocking/electron injecting contacts to organic semiconductors. Depending on the ALD growth conditions, the magnesium content at the film surface varied from x = 0 to x = 0.6. Magnesium was present only at the ZnO:Al surface and subsurface regions and did not diffuse into deeper parts of the layer. The work function of the AZO/AMZO (x = 0.3) film was 3.4 eV (based on the ultraviolet photoelectron spectroscopy). To investigate carrier injection properties of such contacts, single layer organic structures with either pentacene or 2,4-bis[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl] squaraine layers were prepared. Deposition of the AMZO layers with x = 0.3 resulted in a decrease of the reverse currents by 1–2 orders of magnitude and an improvement of the diode rectification. The AMZO layer improved hole blocking/electron injecting properties of the AZO electrodes. The analysis of the current-voltage characteristics by a differential approach revealed a richer injection and recombination mechanisms in the structures containing the additional AMZO layer. Among those mechanisms, monomolecular, bimolecular and superhigh injection were identified.     

Fabrication of Ag nanoparticle/ZnO thin films using dual-plasma-enhanced metal-organic chemical vapor deposition (DPEMOCVD) system incorporated with photoreduction method and its application

We report a novel method to grow silver nanoparticle/zinc oxide (Ag NP/ZnO) thin films using a dual-plasma-enhanced metal-organic chemical vapor deposition (DPEMOCVD) system incorporated with a photoreduction method. The crystalline quality, optical properties, and electrical characteristics of Ag NP/ZnO thin films depend on the AgNO₃ concentration or Ag content and annealing temperature. Optimal Ag NP/ZnO thin films have been grown with a AgNO₃ concentration of 0.12 M or 2.54 at%- Ag content and 500 °C- rapid thermal annealing (RTA); these films show orientation peaks of hexagonal-wurtzite-structured ZnO (002) and face-center-cubic-crystalline Ag (111), respectively. The transmittance and resistivity for optimal Ag NP/ZnO thin films are 85% and 6.9×10⁻⁴ Ω cm. Some Ag NP/ZnO transparent conducting oxide (TCO) films were applied to InGaN/GaN LEDs as transparent conductive layers. The InGaN/GaN LEDs with optimal Ag NP/ZnO TCO films showed electric and optical performance levels similar to those of devices fabricated with indium tin oxide.     

Dual enhancing properties of LiF with varying positions inside organic light-emitting devices

A multilayer organic light-emitting device (OLED) has been fabricated with a thin (0.3 nm) lithium fluoride (LiF) layer inserted inside an electron transport layer (ETL), aluminum tris(8-hydroxyquinoline) (Alq₃). The LiF electron injection layer (EIL) has not been used at an Al/Alq₃ interface in the device on purpose to observe properties of LiF. The electron injection-limited OLED with the LiF layer inside 50 nm Alq₃ at a one forth, a half or a three forth position assures two different enhancing properties of LiF. When the LiF layer is positioned closer to the Al cathode, the injection-limited OLED shows enhanced injection by Al interdiffusion. The Al interdiffusion at least up to 12.5 nm inside Alq₃ rules out the possible insulating buffer model in a small molecule bottom-emission (BE) OLED with a thin, less than one nanometer, electron injection layer (EIL). If the position is further away from the Al cathode, the Al diffusion reaches the LiF layer no longer and the device shows the electroluminescence (EL) enhancement without an enhanced injection. The suggested mechanism of LiF EL efficiency enhancer is that the thin LiF layer induces carrier trap sites and the trapped charges alters the distribution of the field inside the OLED and, consequently, gives a better recombination of the device. By substituting the Alq₃ ETL region with copper phthalocyanine (CuPc), all of the electron injection from the cathode of Al/CuPc interface, the induced recombination at the Alq₃ emitting layer (EML) by the LiF EL efficiency enhancer, and the operating voltage reduction from high conductive CuPc can be achieved. The enhanced property reaches 100 mA/cm² of current density and 1000 cd/m² of luminance at 5 V with its turn-on slightly larger than 2 V. The enhanced device is as good as our previously reported non-injection limited LiF EIL device [Yeonjin Yi, Seong Jun Kang, Kwanghee Cho, Jong Mo Koo, Kyul Han, Kyongjin Park, Myungkeun Noh, Chung Nam Whang, Kwangho Jeong, Appl. Phys. Lett. 86 (2005) 213502].     

Carrier transport of inverted quantum dot LED with PEIE polymer

An inverted-type quantum-dot light-emitting-diode (QD LED), employing low-work function organic material polyethylenimine ethoxylated (PEIE) as electron injection layer, was fabricated by all solution processing method, excluding anode electrode. From transmission electron microscopy (TEM) and scanning electron microscopy (SEM) studies, it was confirmed that CdSe@ZnS QDs with 7 nm size were uniformly distributed as a monolayer on PEIE layer. In this inverted QD LED, two kinds of hybrid organic materials, [poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo)(F8BT) + poly(N,N′-bis(4-butylphenyl)-N,N′-bis(phenyl)benzidine (poly-TPD)] and [4,4′-N,N′-dicarbazole-biphenyl (CBP) + poly-TPD], were adopted as hole transport layer having high highest occupied molecular orbital (HOMO) level for improving hole transport ability. At a low-operating voltage of 8 V, the device emits orange and red spectral radiation with high brightness up to 2450 and 1420 cd/m², and luminance efficacy of 1.4 cd/A and 0.89 cd/A, respectively, at 7 V applied bias. Also, the carrier transport mechanisms for the QD LEDs are described by using several models to fit the experimental I–V data.     

Bright and efficient white stacked organic light-emitting diodes

High brightness and efficient white stacked organic light-emitting diodes have been fabricated by connecting individual blue and red emissive units with the anode–cathode layer (ACL) consisting of LiF (1 nm)/Ca (25 nm)/Ag (15 nm). Use 1,3-bis(carbazol-9-yl)benzene (mCP):bis(3,5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl) iridium III (FirPic) as the blue emitter and tris(8-hydroxy-quinolinato)aluminium (Alq₃):4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran (DCJTB) as the red emitter, white light emission with CIE coordinates of (0.32, 0.38) was obtained at a driving voltage of 26 V with a luminance of 40,000 cd/m². By replacing the red fluorescent emitter with a phosphorescent one, the color coordinates were improved to (0.33, 0.31). The peak external quantum efficiency was enhanced from 5.3% (at 28.2 mA/cm²) to 10.5% (at 1.4 mA/cm²) as well.     

Colored reflective organic light-emitting device without bias

Under white ambient illumination and without bias, a reflective organic light-emitting device (ROLED) comprising a microcavity cathode exhibited various colors for static information display applications by means of internal interference and absorption effects. The configuration of this microcavity cathode was a metal/organometallic/metal structure of Al (10 nm)/Ag (15 nm)/Ag nanoparticles doped inside tris(8-hydroxyquinolinato) aluminum (Alq₃) (x nm)/Al (100 nm) with excellent conductivity. The thickness of the Ag:Alq₃ played a crucial role in determining the reflection color; for example, varying it from 20, 40, 60, 80 and 100 nm yielded the colors light yellow, light orange, reddish purple, greenish blue, and light green, respectively. In the dark, this ROLED can be used to display information with an ultra-high contrast ratio by applying on a small bias, like conventional OLED displays. Hence, this ROLED is a highly promising candidate for applications in energy-saving electronic fixed-pattern signs, logos, indicators, and manual information displays.     

Ultra-thin and graded sliver electrodes for use in transparent pentacene field-effect transistors

The authors report the fabrication of efficient and transparent pentacene field-effect transistors (FETs) using a graded structure of ultra-thin silver (Ag) source and drain (S–D) electrodes. The S–D electrodes were prepared by thermal evaporation with a controlled deposition rate to form Ag layer with a graded structure, leading to a reduced injection barrier and smoothing the contact surface between the electrode and the pentacene channel. The sheet resistance of such Ag electrode was found to be as low as 9 Ω/sq. In addition, a hole-only behavior of device with Ag electrode characterized by current–voltage measurement and conductive atomic-force microscopy shows the injection property of high current flowing as compared with device using Au electrode, resulting in an efficient injection condition existing at the interface of the graded Ag/pentacene. Device characterization indicates the transparent pentacene FET with a graded ultra-thin Ag electrode and organic capping layer of N,N′-di(1-naphthyl)-N,N′-diphenylbenzidine exhibits a high transmission rate of ∼75% in the range of visible light from 400 to 550 nm, a threshold voltage of −6.0 V, an on–off drain current ratio of 8.4 × 10⁵, and a field-effect mobility of 1.71 cm²/V s, thus significantly outperforming pentacene FETs with multilayer oxide electrodes or other transparent thin metal layers.     

Effect of doping concentration on the properties of bismuth doped tin sulfide thin films prepared by spray pyrolysis

Bismuth doped tin sulfide (SnS:Bi) thin films were deposited onto glass substrates by the spray pyrolysis technique at the substrate temperature of 350 °C. The effect of doping concentration [Bi/Sn] on their structural, optical and electrical properties was investigated as a function of bismuth doping between 0 and 8 at%. The XRD results showed that the films were polycrystalline SnS with orthorhombic structure and the crystallites in the films were oriented along (111) direction. Atomic force microscopy revealed that the particle size and surface roughness of the films increased due to Bi-doping. Optical analysis exhibited the band gap value of 1.40 eV for SnS:Bi (6 at%) which was lower than the band gap value for 0 at% of Bi (1.60 eV). The film has low resistivity of 4.788×10⁻¹ Ω-cm and higher carrier concentration of 3.625×10¹⁸ cm⁻³ was obtained at a doping ratio of 6 at%.     

Microstructural evaluation and failure analysis of Ag wire bonded to Al pads

We found the failure mechanisms in Ag wire bonded to Al pads during the high-temperature-storage lifetime test (HTST) and the unbiased highly-accelerated temperature and humidity storage test (uHAST). The native oxide layer on the Al pads caused a ball lift. The moisture and the thermal energy during uHAST along with the Cl⁻ ion in epoxy molding compounds (EMCs) induced repetitive oxidation and reduction reactions of the Ag–Al intermetallic compounds (IMCs) with the Al pads. These repetitive reactions formed H₂ gas as a by-product causing the formation of a micro-crack. In addition, the alumina layer acted as a resistive layer in the Ag–Al IMCs. The phases of the Ag–Al IMCs were identified as Ag₂Al and Ag₃Al, and the growth rates of those IMCs were measured at 150 and 175 °C for 2000 h.     

Tandem white organic light-emitting device using non-modified Ag layer as cathode and interconnecting layer

Tandem white organic light-emitting device (WOLED) using non-modified Ag film as cathode and interconnecting layer is demonstrated. Effective electron injection is achieved when Ag is deposited on 4,7-diphenyl-1,10-phenanthroline electron transporting layer without any modified layer. Single OLED with Ag cathode shows comparable performance to that of device with Mg:Ag cathode. Such tandem WOLED exhibits low driving voltage, high power efficiency (15.1 lm/W at 1000 cd/m²) and low efficiency roll-off. The working mechanisms of single and tandem devices were discussed in detail. These results could provide a simple method to fabricate high performance tandem white OLED.     

Fabrication of NbN/AlN/NbN junctions with Al embedding circuits on Si membrane for 1.5 THz SIS mixers

A process has been developed to fabricate NbN tunnel junctions and 1.5 THz SIS mixers with Al electrodes and Al/SiO₂/Al microstrip tuning circuits on thin Si membranes patterned on silicon on insulator wafers (SIMOX). High Josephson current density (J_c up to 2×10⁴ A/cm²) NbN/AlN/NbN and NbN/MgO/NbN SIS junctions have been fabricated with a reasonably good V_m quality factor and energy gap values close to 5 meV at 4.2 K on (100) oriented 3 inches SIMOX wafers covered by a thin (∼8 nm) MgO buffer layer. The sputtering conditions critically influence the dielectric quality of both AlN and MgO tunnel barriers as well as the surface losses of NbN electrodes. 0.6-μm Si/SiO₂ membranes are obtained after processing of a whole wafer and etching the individual chips in EDP. Such a technology is applied to the development of a waveguide/membrane SIS mixer for use around 1.5 THz.     

Effect of co-doping concentration on structural,morphological, optical and electrical properties of aluminium and indium co-doped ZnO thin films deposited by ultrasonic spray pyrolysis

In this work, we reported a chemical approach to prepare aluminium and indium co-doped ZnO thin films (AIZO) by ultrasonic spray pyrolysis. Film depositions were carried out on soda lime glass substrates at 425 °C by using a spray solution containing zinc acetate as zinc precursor, aluminium acetylacetonate as Al dopant source and indium (III) acetate as In dopant source. Physical properties such as structural, morphological, optical and electrical properties were studied with respect to the equal variations in co-dopants concentration (0.5–3 at%). X-ray diffraction patterns proved that films are poly crystalline with (002) preferential orientation. Scanning electron microscopy analysis showed that AIZO films grown like hexagonal nanopyramids, elongated grains and irregular trigonals. Optical transmittance ~85% and a minimum resistivity of 1.3×10⁻³ Ω cm, are achieved for films when co-doped with 1.5 at% of Al and 1.5 at% of In, confirm that AIZO films are suitable for transparent conductive oxide (TCO) applications.     

Synthesis,characterization and high-efficiency blue electroluminescence based on coumarin derivatives of 7-diethylamino-coumarin-3-carboxamide

A novel tripodal compound, tris[2-(7-diethylamino-coumarin-3-carboxamide)ethyl]amine (tren-C), and a model compound, N-butyl-7-(diethylamino)-coumarin-3-carboxamide, were synthesized and characterized by elemental analysis, infrared and ¹H NMR spectra. The structure of the model compound was characterized by single crystal X-ray crystallography. The electroluminescence devices of ITO/2-TNATA (5 nm)/NPB (40 nm)/CBP: tren-C or model compound (wt%, 30 nm)/Bu-PBD (30 nm)/LiF (1 nm)/Al (100 nm) were fabricated and characterized. The EL spectra of the devices comprising vacuum vapour-deposited films using tren-C as a dopant are similar to the PL spectrum of tren-C in chloroform solutions. At the concentration of 0.5 wt% tren-C, a blue-emitting OLED with an emission peak at 464 nm, a maximum external quantum efficiency (EQE) of 1.39% and a maximum luminous efficiency of 2 cd/A at the current density of 20 mA/cm², and a maximum luminance of 1450 cd/m² at 12 V are achieved.     

Low threshold melt-processed two-photon organic surface emitting upconversion lasers

Herein, a low threshold, wavelength-tunable, compact, two-photon pumped upconversion laser is presented. The surface emitting lasers are composed of melt-processed 1,4-bis[2-[4-[N,N-di(p-totyl)amino]phenyl]vinyl]benzene (DADSB) as active media and two designed distributed bragg reflectors. The melting fabrication process is very simple, and the lasing threshold is as low as 150 μJ cm^?2 pulse^?1, when pumped by a Ti:sapphire amplifier operating at 800 nm with a 150 fs pulse width. To the best of our knowledge, it is one of the lowest values for two-photon lasers. Lasing from multimode to single-mode oscillation is demonstrated. Tunable single mode oscillation was obtained at wavelength from 514 nm to 523 nm with a spectral width of less than 0.2 nm.     

Enhanced pure red electroluminescence intensity of Eu(o-BBA)3(phen) by red dye co-doping and inorganic semiconductor as charge carrier function layer

There is an emission peak at 494 nm in the electroluminescence (EL) of PVK [poly(n-vinylcarbazole)]: Eu(o-BBA)₃(phen) besides PVK exciton emission and Eu³⁺ characteristic emissions. Both the peaking at 494 nm emission and PVK emission influenced the color purity of red emission from Eu(o-BBA)₃(phen). In order to restrain these emissions and obtain high intensity red emission, 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7,-tetramethyljulolidy-9-enyl)-4Hpyran (DCJTB) and Eu(o-BBA)₃(phen) were co-doped in PVK solution and used as the active emission layer. The EL intensity of co-doped devices reached to 420 cd/m² at 20 V driving voltage. The chromaticity coordinates of EL was invariable (x = 0.55, y = 0.36) with the increase of driving voltage. For further improvement of EL intensity, organic–inorganic hybrid devices (ITO/active emission layer/ZnS/Al) were fabricated. The EL intensity was increased by a factor of 2.5 [(420 cd/m²)/(168 cd/m²)] when the Eu complex was doped with an efficient dye DCJTB, and by a factor of ≈4 [(650 cd/m²)/(168 cd/m²)] when in addition ZnS layer was deposited on such an emitting layer prior to evaporation of the Al cathode.