碳纳米管膜在电解液中电子输运性质的研究

研究了在电解液下碳纳米管膜中的电子输运特性.所用的碳纳米管是用热灯丝化学气相沉积法合成的.与通常观测到的在碳纳米管膜/电解液界面存在的电化学势不同,实验结果表明,在电解液作用下碳纳米管膜与接触电极间也存在着明显的电势,并与介质溶液性质、浓度和温度有关.电势的大小随浓度和温度的增加而增加.并对实验结果进行了分析.     

单壁碳纳米管量子点的传导电流与电流噪声谱

近来,碳纳米管尤其是单壁碳纳米管越来越引起人们的注意,并已经广泛应用于实践中。本文采用开放量子系统的研究方法,利用量子主方程给出了与扫描隧道显微镜耦合的单壁碳纳米管量子点的输运电流与电流噪声谱的一般性计算方法,并研究了强弛豫条件下输运电流的性质。     

Friedel Oscillations in a One-Dimensional Noninteracting Electron Gas

Using the linear response theory, we studied the Friedel oscillations in a one-dimensional noninteracting electron gas in the presence of two impurities. The oscillations are strongly affected by the distance between impurities. The case of Coulomb potential for a single impurity is also considered.     

纳米碳管在聚合物中的应用及其复合材料研究进展

介绍了纳米碳管的制备、表面改性等,论述了纳米碳管在聚合物中的应用及其复合材料的制备方法和研究进展,并总结了存在的主要问题,展望了纳米碳管／聚合物基复合材料的应用前景。     

Ultrahigh Frequency Carbon Nanotube Transistor Based on a Single Nanotube

Single-walled carbon nanotube field-effect transistors (CNT FETs) are predicted to have intrinsic cutoff frequencies approaching the THz range. Here ldquointrinsicrdquo means that the parasitic capacitance due to fringing fields is negligible compared to the gate-source capacitance required to modulate the conductance. In practice, although there are strategies proposed to mitigate this based on parallel arrays of CNT FETs, this parasitic capacitance dominates most geometries (even aligned arrays to date). In this work we show nanotube transistor performance with maximum stable gain above 1 GHz (even including the parasitics) by combining ldquoon-chiprdquo the electrical properties of 100 CNT FETs fabricated on one long nanotube. This also solves the problem of impedance matching by boosting the on current to a large (mA) value, and at the same time allows one to extract properties of each individual CNT FET, since they are identical in electrical characteristics as they are made out of the same CNT. This strategy opens the door to applications of carbon nanotube devices in the RF and microwave frequency range, a technologically relevant portion of the spectrum for both wired and wireless electronics, that has been (until now) incompatible with nanotube device technology.     

模拟研究常闭和常开工作模式下的平面栅极型碳纳米管场发射电子源

采用数值模拟的方法对比性地研究了常闭和常开工作模式下平面栅极型碳纳米管场发射电子源.静电场的数值计算结果显示:常闭工作模式下该电子源中阴极电极的表面电场分布不均匀,边缘处的高电场易导致其上的碳纳米管烧毁,从而引起场发射电流衰减.为了解决此问题,提出将常开工作模式用于该电子源,并证实常开工作模式能够用于该电子源,并有利于解决电流衰减问题.因此,相对于常闭工作模式,常开工作模式更适合平面栅极型碳纳米管场发射电子源.     

碳纳米管的研究进展

碳纳米管是国际新材料领域的研究前沿和热点，详细综述了碳纳米管的结构与性能，近年来碳纳米管的各种制备方法和纯化方法，以及在各领域的应用研究及其最新研究进展；并展望了碳纳米管的应用和研究前景。     

碳纳米管的研究进展

碳纳米管是国际新材料领域的研究前沿和热点,详细综述了碳纳米管的结构与性能,近年来碳纳米管的各种制备方法和纯化方法,以及在各领域的应用研究及其最新研究进展;并展望了碳纳米管的应用和研究前景.