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1.
Analysis of the quartz properties shows the existence of unexplored angular domains for which Rayleigh waves can be efficiently excited, exhibiting physical characteristics better than the ones of the (ST,X) cut. This paper presents a family of quartz cuts allowing significant improvements of surface acoustic wave (SAW) devices on quartz. A first set of experiments has been performed, confirming the theoretical predictions of the basic properties of SAW on these cuts. A second set of measurements then was achieved to refine the identification of coefficients needed to perform industrial SAW design. A demonstration of the improvements accessible using this new cut is presented. A low loss SAW filter working at 71 MHz has been fabricated using smaller aluminum thickness than that for standard quartz cuts, and exhibiting all the properties required for its industrial implementation.  相似文献   

2.
Surface-acoustic-wave (SAW) measurement techniques can be effectively used to determine the acoustic properties of dielectric and piezoelectric films. Such films can be used for the development of semiconductor-integrated microwave-frequency surface and bulk acoustic wave devices. The acoustic properties of silicon nitride, silicon oxynitride, silicon carbide, and TEOS glass, deposited by plasma-enhanced chemical-vapor-deposition (PECVD) on GaAs, have been characterized using linear arrays of SAW interdigital electrodes operating in the harmonic mode over the frequency region from 30 MHz to above 1.0 GHz. The elastic constants of these amorphous films have been determined by fitting theoretical dispersion curves to the measured SAW velocity characteristics. Frequency-dependent SAW propagation-loss values have been determined from the observed linear change in loss as a function of transducer separation. Preliminary measurements of the temperature coefficient of frequency (TCF) for SAW propagation of the films on GaAs are also given  相似文献   

3.
Surface acoustic wave (SAW) properties of proton-exchanged (PE) z-cut lithium niobate (LiNbO3) waveguides with silicon dioxide (SiO2) film layers were investigated using octanoic acid. The distribution of hydrogen measured by secondary ion mass spectrometry (SIMS) showed a step-like profile, which was assumed to be equal to the waveguide depth (d). The SiO2 film was deposited on z-cut LiNbO3 waveguide by radio frequency (rf) magnetron sputtering. We investigated the important parameters for the design of SAW devices such as phase velocity (Vp), insertion loss (IL) and temperature coefficient of frequency (TCF) by a network analyzer using thin-film aluminum interdigital transducer electrodes on the upper SiO2 film surface. The experimental results showed that the Vp of SAW decreased slightly with the increase of h/lambda, where h was the thickness of SiO2 films and lambda was the wavelength. The IL of SAW increased with increased h/lambda. The TCF of SAW calculated from the frequency change of the output of SAW delay line showed an evident decrease with the increase of h/lambda. The TCF for PE z-cut LiNbO3 was measured to be about -54.72 ppm/degreees C at h/lambda = 0.08. It revealed that the SiO2 films could compensate and improve the temperature stability as compared with the TCF of SAW on PE samples without SiO2 film.  相似文献   

4.
5.
Optimal cuts of langasite, La3Ga5SiO14 for SAW devices   总被引:1,自引:0,他引:1  
The results of a theoretical and experimental investigation of the SAW propagation characteristics in an optimal region of langasite defined by the Euler angles φ from -15° to +10°, &thetas; from 120° to 165°, and ψ from 20° to 45° are presented. Based on temperature coefficients of the elastic constants derived from experimental data, some optimal orientations of langasite characterized by high electromechanical coupling factor (k2), zero power flow angle (PFA) and low or zero temperature coefficient of frequency (TCF) were found. The SAW velocity in the region of interest is highly anisotropic; this results in a significant amount of diffraction, which must be taken into account in the search for orientations useful for SAW devices. An orientation having simultaneously zero PFA, zero TCF, negligible diffraction, and relatively high piezoelectric coupling has been found and verified experimentally. The experimental results are in excellent agreement with the calculated SAW characteristics. The frequency response of a SAW device fabricated on the optimal cut of langasite is presented and demonstrates that high performance SAW filters can be realized on this optimal cut of langasite  相似文献   

6.
This paper investigates acoustic properties, including the temperature coefficient of elasticity (TCE), of fluorine-doped silicon oxide (SiOF) films and proposes the application of the films to the temperature compensation of RF SAW devices. From Fourier transform infrared spectroscopy (FT-IR), SiOF films were expected to possess good TCE properties. We fabricated a series of SAW devices using the SiOF-overlay/Cu-grating/LiNbO(3)-substrate structure, and evaluated their performance. The experiments showed that the temperature coefficient of frequency (TCF) increases with the fluorine content r, as we expected from the FT-IR measurement. This means that the Si-O-Si atomic structure measurable by the FT-IR governs the TCE behavior of SiO(2)-based films even when the dopant is added. In comparison with pure SiO(2) with the film thickness h of 0.3 wavelengths (λ), TCF was improved by 7.7 ppm/°C without deterioration of the effective electromechanical coupling factor K2 when r = 3.8 atomic % and h = 0.28λ. Fluorine inclusion did not obviously influence the resonators' Q factors when r < 8.8 atomic %.  相似文献   

7.
Diamond has the highest surface acoustic wave (SAW) velocity among all materials and thus can provide much advantage for fabrication of high frequency SAW devices when it is combined with a piezoelectric thin film. Basic SAW properties of layered structures consisting of a piezoelectric material layer, a diamond layer and a substrate were examined by theoretical calculation. Rayleigh mode SAW's with large SAW velocities up to 12,000 m/s and large electro-mechanical coupling coefficients from 1 to 11% were found to propagate in ZnO/diamond/Si, LiNbO3/diamond/Si and LiTaO3/diamond/Si structures. It was also found that a SiO2/ZnO/diamond/Si structure can realize a zero temperature coefficient of frequency with a high phase velocity of 8,000-9,000 m/s and a large electro-mechanical coupling coefficient of up to 4%  相似文献   

8.
A perturbation approach has been developed to predict the sensitivity of surface transverse waves (STW) to quasi-static temperature effects. This approach is based on the combination of unperturbed STW characteristics and thermoelastic properties of the substrate. The unperturbed STW parameters are calculated taking piezoelectricity into account. Both cases of STW propagating under shallow groove or thin metal strip gratings are studied. An analytical expression of the first order temperature coefficient is obtained in the case of grooves. A simplified calculation is proposed for thin metal strip grating devices. Results are compared to available experimental data. Possible improvements of this model are finally discussed.  相似文献   

9.
Temperature is the main parameter that affects the stability of surface acoustic wave (SAW) devices such as the external and internal stress. The temperature sensitivity of the frequency as a function of quartz crystal anisotropy is presented by a perturbation equation because of a temperature change. The analytical result shows which cut is suitable for high temperature sensitivity of the quartz and which cut is associated with low temperature sensitivity. The theoretical sensitivity values are compared with experimental results. Both the experimental and theoretical results are in good agreement.  相似文献   

10.
ZnO thin films with a high piezoelectric coupling coefficient are widely used for high frequency and low loss surface acoustic wave (SAW) devices when the film is deposited on top of a high acoustic velocity substrate, such as diamond or sapphire. The performance of these devices is critically dependent on the quality of the ZnO films as well as of the interface between ZnO and the substrate. In this paper, we report the studies on piezoelectric properties of epitaxial (112¯0) ZnO thin films grown on R-plane sapphire substrates using metal organic chemical vapor deposition (MOCVD) technique. The c-axis of the ZnO film is in-plane. The ZnO/R-Al2O3 interface is atomically sharp. SAW delay lines, aligned parallel to the c-axis, were used to characterize the surface wave velocity, coupling coefficient, and temperature coefficient of frequency as functions of film thickness to wavelength ratio (h/λ). The acoustic wave properties of the material system were calculated using Adler's matrix method, and the devices were simulated using the quasi-static approximation based on Green's function analysis  相似文献   

11.
(100)AlN films have better surface acoustic wave (SAW) properties than (002) AlN films. In this research, (100) AlN films were combined with diamonds as a new composite SAW substrate. The SAW properties of (100) AlN films on diamonds were analyzed with 4 composite structures: interdigital transducer (IDT)/(100)AlN/diamond, (100)AlN/IDT/diamond, IDT/(100)AlN/metal/diamond, and metal/IDT/(100) AlN/diamond, and they exhibited some excellent SAW properties. Our research results provide a predictable and theoretical basis for further application on high-velocity SAW devices.  相似文献   

12.
Thermal and mechanical sensitivities of vibrating structures and wave guides are key parameters for the optimization of high stability resonant devices operating in the ultrasonic frequency range (from a few tenth of kilohertz to a few gigahertz). In this paper, the possibility to simulate and predict temperature coefficients of frequency (TCF) of quartz transducers of any shape as well as their stress sensitivity coefficients is addressed. The theoretical developments based on harmonic finite-element analysis coupled with a variational perturbation method are detailed, showing how to derive the regarded parameters. The proposed approach is validated using a two-dimensional (2-D) model of a plane face-bulk acoustic resonator for which an analytical model can give access to both TCF and stress sensitivity coefficients. It is then applied to a 2-D model of convex plane bulk acoustic resonator of singly rotated quartz and used to compute the first order TCF of a 3-D model of a tuning fork structure. In the latter case, the importance of considering the actual excitation of the device is demonstrated, allowing for the accurate definition of angular loci for which thermal compensation can be expected, in agreement with literature. Possible extensions and improvements of the proposed method is discussed in conclusion.  相似文献   

13.
Surface acoustic wave (SAW) devices play a significant role in signal processing, frequency control and sensing applications. In general, they cannot operate at elevated temperature. The new crystal of langasite provides possibility for surface acoustic wave devices applied at high temperature. This paper studies the SAW properties of single and doubly rotated cuts of LGS at high temperature. The calculated SAW properties of LGS are analyzed in space with aid of contour plots, and two promising SAW orientation regions at high temperature are presented. For some typical cuts and propagating directions within the two optimal regions, their SAW characteristics vs temperature are discussed. Based on the experimental evidence in some literatures, the reliability of calculated results is verified.  相似文献   

14.
The c-axis-oriented aluminum nitride (AlN) films were deposited on z-cut lithium niobate (LiNbO3) substrates by reactive RF magnetron sputtering. The crystalline orientation of the AlN film determined by x-ray diffraction (XRD) was found to be dependent on the deposition conditions such as substrate temperature, N2 concentration, and sputtering pressure. Highly c-axis-oriented AlN films to fabricate the AlN/LiNbO3-based surface acoustic wave (SAW) devices were obtained under a sputtering pressure of 3.5 mTorr, N2 concentration of 60%, RF power of 165 W, and substrate temperature of 400°C. A dense pebble-like surface texture of c-axis-oriented AlN film was obtained by scanning electron microscopy (SEM). The phase velocity and the electromechanical coupling coefficient (K2) of SAW were measured to be about 4200 m/s and 1.5%, respectively. The temperature coefficient of frequency (TCF) of SAW was calculated to be about -66 ppm/°C  相似文献   

15.
The temperature stability of SAW resonators on quartz can be enhanced by means of double resonators. The turnover temperatures of the double resonators' components, called single resonators, are positioned above and below room temperature. As a consequence, the temperature coefficients of frequency of the 1st order (TCF1) have opposite signs at room temperature, leading to the vanishing TCF1 of the double resonators. Frequently, different turnover temperatures are adjusted by different propagation directions on an ST cut of quartz. An overview of known and new methods for compensating the temperature coefficient of frequency of the 2nd order (TCF2) of two-port and one-port SAW double resonators is given. A concept by means of which temperature-stable circuits of single resonators are found is described. Two types of temperature-stable double resonators found by applying that concept are treated in detail: 1) a two-port resonator composed of two cascaded two-port resonators and a coupling inductance, and 2) a one-port resonator comprising a series connection of one-port resonators with an inductance in parallel with each single resonator. The substrates are 35.5 degrees rotY cuts of quartz. In both cases, the shift of resonance frequency within the temperature range from -30 degrees C to 70 degrees C is smaller than 20 ppm.  相似文献   

16.
This paper describes a method for widening the passband of transversely coupled resonator filters (TCF) using only the fundamental symmetric and antisymmetric modes. The coupling of modes analysis in the transverse direction is applied to the TCF design to investigate the passband width. As a result, it is found that the passband width can be increased by making the surface acoustic wave (SAW) velocity difference between the interdigital transducer (IDT) region and the resonator gap region smaller. It is proposed that a grating structure be applied to the common ground bar, instead of the uniform metal, to reduce the SAW velocity difference. Using the grating-type common ground bar, filters are fabricated on ST-quartz substrate. The passband of a single filter with a center frequency of 248 MHz is widened up to 410 kHz without any increase of the insertion loss. The effect of the impedance mismatch at the junction of two cascaded devices is investigated. It is shown that the filter performance is improved by reduction of the small parasitic capacitance existing at the cascade point. Experimentally, the capacitance formed between the bus bar of the IDT and the bottom surface of the ceramic package is reduced. The insertion loss is reduced by 0.0 dB, and 3 dB passband is widened by 8 kHz for a filter with a center frequency of 248 MHz. On the basis of these two improvements, cascaded TCFs are fabricated. For a filter with a center frequency of 248 MHz, an insertion loss of 5.5 dB and a 3-dB passband width of 270 kHz are obtained  相似文献   

17.
《IEEE sensors journal》2009,9(12):1778-1783
This paper concentrates on the theoretical analysis of wireless passive surface acoustic wave (SAW) impedance-loaded sensors. A general method is proposed for simulating the impedance-loaded SAW sensors. It is based on the combined finite-element method and boundary element method (FEM/BEM). A FEM is used to account for the mass loading effect of electrodes and a Green's function is used to model the piezoelectric substrate. Comparison between the simulations and measurements on SAW devices shows a good agreement. The calculated amplitude variation of the impulse response in time domain shows a resonant characteristic with the change of the loaded impedance. It is found that the return loss reaches the maximum value when the resonant frequency of the loaded circuits matches the center frequency of the short-circuited SAW transponder. This phenomenon is successfully explained by using the proposed model. Some high-performance sensors with greater amplitude modulation and larger sensitive range could be designed using this method.   相似文献   

18.
The prediction of the temperature sensitivity of surface acoustic wave (SAW) devices still requires improvement because the nature of the implemented surface modes and the devices' complexity strongly change from the early basic Rayleigh-wave-based devices. To address this problem, a theoretical analysis and a numerical tool have been developed to predict the thermal dispersion of general electro-acoustic devices. The proposed model accounts for the electrode contribution to the frequency-temperature law. The computed thermal sensitivities are compared to experimental results for different kinds of substrates and waves.  相似文献   

19.
A one-port surface acoustic wave (SAW) resonators incorporating Langmuir-Blodgett (LB) films has been investigated. SAW sensors are one potential applications of SAW devices. Most of the work reported on SAW sensor concerns delay lines. In this paper we characterize the mass loading effects of one-port resonators by depositing successive monolayers of LB films onto the surface. A 90 MHz SAW gas-phase sensor has been fabricated on an ST cut quartz substrate, and one-port resonator configurations have been used as the sensing element. Ultra thin monolayers of arachidic acid and arachidic acid ethyl ester have been deposited using the LB method. The resonant frequencies and the Q values have been measured as sensor response. Experimental results show that the Q values and the resonant frequencies of the one-port SAW resonator vary with film mass loading on the SAW device surface.  相似文献   

20.
High performances surface acoustic wave (SAW) filters based on aluminium nitride (AlN)/diamond layered structure have been fabricated. The C-axis oriented aluminum nitride films with various thicknesses were sputtered on unpolished nucleation side of free-standing polycrystalline chemical vapor deposition (CVD) diamond obtained by silicon substrate etching. Experimental results show that high order modes as well as Rayleigh waves are excited. Experimental results are in good agreement with the theoretical dispersion curves determined by software simulation with Green's function formalism. We demonstrate that high phase velocity first mode wave (so-called Sezawa wave) with high electromechanical coupling coefficient are obtained on AlN/diamond structure. This structure also has a low temperature coefficient of frequency (TCF), and preliminary results suggest that a zero TCF could be expected.  相似文献   

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