Dielectric Properties of Explosively Compacted BaTiO3

Polycrystalline BaTiO₃ was explosively compacted to nearly theoretical density, and its dielectric and piezoelectric properties were investigated. The compacted bodies did not exhibit dielectric hysteresis, a Curie point, or piezoelectric properties; their dielectric constant and dissipation factor increased linearly with temperature. The dielectric constant was much lower than those of similar dense bodies obtained by conventional sintering. These results may be interpreted in terms of weak intergranular bonding and increased numbers of defects generated in the shocked material. When explosively compacted bodies were sintered, normal ferroelectric and piezoelectric properties and improved microstructures were obtained.     

Polymorphism and Dielectric Properties of Nb-Doped BaTiO3

A working subsolidus phase diagram for the system BaTiO₃–Ba₅Nb₄O₁₅ has been determined by firing sol–gel-synthesized samples over a range of temperatures. The main difference from previous diagrams is the greater extent of the Nb-doped BaTiO₃ cubic solid solutions, BaTi_{1−5 x} Nb_{4 x} O₃, at lower temperatures with x extending to 0.09 at 900°C, but only 0.05 at 1400°C. Electrical property measurements show that compositions with large x ( x ≥0.0025) are highly insulating for pellets sintered at 1300°C in air, followed by a slow cool. Compositions with low x , however, exhibit a residual semiconducting grain core and are not fully reoxidized readily. Composition dependence of the dielectric properties shows a continuous and smooth transition from classic ferroelectric behavior with pure BaTiO₃ to normal dielectric response with a temperature-independent relative permittivity of approximately 22–24 for x >∼0.08. At intermediate compositions, ranges of both relaxor ferroelectric and quasi-ferroelectric behavior are observed. Possible reasons for an observed anomalous increase in value of the permittivity at the ferroelectric transition temperature at low x , which is superposed on an overall decrease in permittivity with increasing x , are discussed.     

Electrophoretic Deposition and Characterization of Micrometer-Scale BaTiO3 Based X7R Dielectric Thick Films

Uniform and relatively dense BaTiO₃ thick films of 1–5 μm were prepared by an electrophoretic deposition process using submicrometer BaTiO₃ powders (mean particle size: ∼0.2 μm). Two different BaTiO₃ powders and solvent media were used to investigate the film quality and thickness control. The surface charge mechanism of BaTiO₃ particles was explained according to the observed results. The microstructures were examined by means of SEM. The experimental results show that the thickness could be controlled independently of suspension concentration by keeping a constant applied voltage and a constant current drop in a given suspension. BaTiO₃ thick films have good insulation resistance and dielectric properties such as a dielectric constant and a dissipation factor that are compatible with the data from conventional tape-cast BaTiO₃ thin layers.     

Crystal Chemistry and Dielectric Properties in the Systems BaTiO3-UO2 and BaTiO3-BaUO3

Polycrystalline barium titanate fired in nitrogen at 1300° to 1400°C accommodates up to 3 mole % UO₂ in solid solution; its structure is then cubic at room temperature. With BaUO₃ additions the structure becomes disordered and quasi-cubic. In air, about 1 mole % UO₂ goes into solid solution in BaTiO₃ but the structure remains tetragonal. Diffraction peaks of a new phase, possibly a ternary oxide of barium, uranium, and titanium, appear in patterns of specimens containing more than 2 mole % UO₂. The dielectric constant of BaTiO₃ ceramics fired in air, steam, or oxygen increases with up to about 0.5 mole % UO₂ but declines rapidly above this level. The dielectric constant of BaUO₃ is about two orders of magnitude lower than that of BaTiO₃, and additions of BaUO₃ invariably lower the dielectric constant of BaTiO₃.     

Synthesis and Dielectric Properties of Niobia Coating on BaTiO3

Different from conventional powder mixing, this study demonstrates a method of homogeneous coating for niobia (Nb₂O₅) on ferroelectric barium titanate (BaTiO₃) powders. The precipitation of Nb coating with pH has been determined quantitatively by the inductance-coupled plasma method. Crystalline phases were determined by X-ray diffractometry, and the formation of a "core-shell" structure with a Nb concentration gradient was observed by a transmission electron microscope with X-ray energy-dispersive spectroscopy. The dielectric constant ( K ) of the samples prepared by the nanocoating method showed a more stable temperature coefficient of capacitance and well satisfied the requirements of X7R.     

Defect Structure and Dielectric Properties of Nd2O3-Modified BaTiO3

The defect structure and dielectric properties of BaTiO₃ with 1 to 10 mol% Nd₂O₃ additions were studied. The results indicated that neodymium occupies the barium site and charge compensation takes place by creation of titanium vacancies. The dependence of inverse electric susceptibility, spontaneous polarization, and specific heat on temperature for samples containing more than 2 mol% of Nd₂O₃ were characteristic of a diffuse transformation resulting from a disordering of defects. The addition of Nd2O3 leads to a very drastic sfiift in the Curie temperature ( Tc ) of BaTiO₃; 3 mel% Nd₂O₃ addition moves Tc below room temperature.     

Influence of Grain Growth on Dielectric Properties of Nb-Doped BaTiO3

Effects of grain size and grain growth in Nb-doped BaTiO₃ on temperature and frequency dependencies of the dielectric constant were investigated. When 0.65 μm powder is sintered to an average grain size of 1 μm, two dielectric constant peaks indicate the presence of Nb-free BaTiO₃ and of Nb-containing material. Single peaks are observed above room temperature after additional grain growth or when 0.07 μm powder is sintered to an average grain size of 1 μm. The Curie point of pure BaTiO₃ with 1 μm grains is 4 to 6°C lower than that of material with grains >10 μm. Thermodynamically, this behavior is accounted for by a phase inversion stress ∼ the room-temperature stress.     

Microcontact Printed BaTiO3 and LaNiO3 Thin Films for Capacitors

There is an ongoing need to develop new technologies to enable further down-scaling of layer thicknesses in multilayer ceramic devices, for example, in multilayer capacitors (MLC). Microcontact printing of chemical solutions of both the dielectric and electrode layers was explored as an economical means of preparing patterned thin films for MLC without requiring photolithography. For this purpose, methanol/acetic acid-based BaTiO₃ solutions were spun onto polydimethylsiloxane stamps, printed onto substrates, pyrolyzed, and crystallized. LaNiO₃ was used as a prototype electrode that could also be microcontact printed. The line edge roughness produced this way was on the order of a tenth of a micrometer, which should enable very small margins. The printed layer thickness was also very uniform. Microcontact printed capacitors with a single dielectric layer were fabricated and found to have dielectric constants >800 with loss tangents <2%. Alignment between subsequent layers is readily achieved. Multilayer dielectric/electrode stacks could be fabricated without cracking or delaminations. Consequently, microcontact printing appears to be a viable potential means of preparing MLC with layer thicknesses in the range of ≤0.2 μm.     

Electrical Properties of Cerium-Doped BaTiO3

The high-temperature equilibrium electrical conductivity of Ce-doped BaTiO₃ was studied in terms of oxygen partial pressure, P (O₂), and composition. In (Ba_1−xCe _x )TiO₃, the conductivity follows the −1/4 power dependence of P (O₂) at high oxygen activities, which supports the view that metal vacancies are created for the compensation of Ce donors, and is nearly independent of P (O₂) where electron compensation prevails at low P (O₂). When Ce is substituted for the normal Ti sites, there is no significant change in conductivity behavior compared with undoped BaTiO₃, indicating the substitution of Ce as Ce⁴⁺ for Ti⁴⁺ in Ba(Ti_1−yCe _y )O₃. The Curie temperature ( T _c) was systematically lowered when Ce³⁺ was incorporated into Ba²⁺ sites, whereas the substitution of Ce⁴⁺ for Ti⁴⁺ sites resulted in no change in this parameter.     

Dielectric and Structural Investigations of the System BaTiO3-BaHfO3

Dielectric measurements and X-ray diffraction studies were made in the system BaTiO₃-BaHfO₃ for polycrystalline specimens containing from 0 to 30 mole % BaHfO₃. The maximum in the dielectric constant for each composition in creased as the BaHfO₃ concentration was in creased to 16 mole % and then decreased with further BaHfO₃ additions. Room-temperature lattice constants and hysteresis loops were meas ured for all compositions. A partial solid-state phase diagram is suggested for the solid solution area of the system. The phase diagram and the dielectric behavior of the system up to 16 mole % BaHfO₃ are explained on the basis of Devonshire's thermodynamic theory. The ferroelectric-paraelectric transition in the composition containing 16 mole % BaHfO₃ was essentially of second order and occurred between a ferroelectric rhombohedral phase and a paraelectric cubic phase.     

Dielectric Aging and Microstructure in the System BaTiO3-CaTiO3

The effect of precipitation of a dispersed CaTiO₃–rich phase on the shape, organization, and thickness of ferroelectric domains in BaTiO₃ was studied. No morphologically related precipitate could be produced despite the close structural similarity of the phases involved. These effects, when correlated with changes in dielectric aging behavior, show that dielectric aging is not a simple thermally activated process.     

Microstructure and Dielectric Properties of Textured SrTiO3 Thin Films

We investigate the relationship between microstructure and dielectric properties of textured SrTiO₃ thin films deposited by radio-frequency magnetron sputtering on epitaxial Pt electrodes on sapphire substrates. The microstructures of Pt electrodes and SrTiO₃ films are studied by transmission electron microscopy, atomic force microscopy, and X-ray diffraction. SrTiO₃ films grown on as-deposited and annealed Pt electrodes, respectively, consist of a mixture of (111)- and (110)-oriented grains. Temperature-dependent dielectric measurements show that differences in texture and microstructure are reflected in the Curie–Weiss behavior of the SrTiO₃ films. Phenomenological models that account for the effects of thermal mismatch strain on the dielectric behavior are developed for different film textures. The models predict that at a given temperature, paraelectric (111)-oriented films of SrTiO₃ on tensile substrates will have a higher Curie–Weiss temperature and a greater dielectric constant than (110)-oriented films or bulk SrTiO₃. The experimental dielectric behavior is compared with the predictions from theory, and different contributions, such as interfacial layers, film stress, and microstructure, to the Curie–Weiss behavior are discussed.     

Control of Microstructure and Orientation in Solution-Deposited BaTiO3 and SrTiO3 Thin Films

Columnar and highly oriented (100) BaTiO₃ and SrTiO₃ thin films were prepared by a chelate-type chemical solution deposition (CSD) process by manipulation of film deposition conditions and seeded growth techniques. Randomly oriented columnar films were prepared on platinum-coated Si substrates by a multilayering process in which nucleation of the perovskite phase was restricted to the substrate or underlying layers by control of layer thickness. The columnar films displayed improvements in dielectric constant and dielectric loss compared to the fine-grain equiaxed films that typically result from CSD methods. Highly oriented BaTiO₃ and SrTiO₃ thin films were fabricated on LaAlO₃ by a seeded growth process that appeared to follow a standard "two-step" growth mechanism that has been previously reported. The film transformation process involved the bulk nucleation of BaTiO₃ throughout the film, followed by the consumption of this matrix by an epitaxial overgrowth process originating at the seed layer. Both BaTiO₃ and PbTiO₃ seed layers were effective in promoting the growth of highly oriented (100) BaTiO₃ films. Based on the various processing factors that can influence thin film microstructure, the decomposition pathway involving the formation of BaCO₃ and TiO₂ appeared to dictate thin film microstructural evolution.     

Roles of Ba/Ti Ratios in the Dielectric Properties of BaTiO3 Ceramics

The effect of the Ba/Ti ratio on microstructure, dielectric/ferroelectric properties, and domain width was studied using optical microscopy, ɛ( T ) curves, D – E hysteresis, and transmission electron microscopy. Although Ti-excess samples showed abnormal grain growth and a decrease of room-temperature permittivity due to a liquid phase at grain boundaries, its ferroelectric properties were similar to those of stoichiometric BaTiO₃ ceramics. However, in Ba-excess samples, an increase of permittivity and ferroelectric properties different from those of stoichiometry were found. Changes in domain width and ferroelectric transition behavior indicated that the variation of dielectric properties was related to the internal stress. It is proposed that this internal stress originated from differences in the thermal expansion coefficient between the matrix and the second phase.     

Effects of Ba6Ti17O40 on the Dielectric Properties of Nb-Doped BaTiO3 Ceramics

The dielectric properties, including the DC breakdown strength, of 1 mol% Nb⁵⁺-doped BaTiO₃ ceramics with different quantities of excess TiO₂ have been investigated. The breakdown strength was found to decrease with increasing TiO₂ content, but could not be readily explained by relative density and grain size effects. The decrease in the breakdown strength from a stoichiometric BaTiO₃ composition to samples with excess TiO₂ is believed to be due to the field enhancement effect (up to a factor of 1.40) at the BaTiO₃ matrix because of the presence of a Ba₆Ti₁₇O₄₀ second phase. The thermal expansion coefficient mismatch between the BaTiO₃ matrix phase and the Ba₆Ti₁₇O₄₀ phase may also result in a low breakdown strength. The dielectric properties of the pure Ba₆Ti₁₇O₄₀ phase were also investigated and are reported herein.     

Calculation of Ultraslow Dielectric Relaxation of Doped BaTiO3 Ceramics

Using a linear voltage ramp method, ultraslow dielectric relaxation processes of La-doped BaTiO₃ boundary layer (BL) capacitors are measured at room temperature. For the electric polarization model of a double-layer dielectric, a procedure to calculate the electrical parameters of grain and grain boundary has been developed. Calculated results suggest that there is a shell on the surface of the grain. TEM images of the BL capacitor also show a lot of microregions with minor structural modifications. Relaxation times are estimated from the equivalent circuit and are in agreement with fitted results.     

Dielectric Properties and Microstructure of Nb-Co Codoped BaTiO3–(Bi0.5Na0.5)TiO3 Ceramics

X-ray diffractometry, scanning electron microscopy, transmission electron microscopy, and an impedance analyzer were used to examine the Nb–Co codoping effects on the densification, crystalline phase, microstructure development, and dielectric–temperature characteristics of BaTiO₃–(Bi_0.5Na_0.5)TiO₃ ceramics. The results indicate that the Curie temperature shifted to a higher temperature (above 140°C) by adding BNT. The dielectric constant–temperature (ɛ– T ) curve broadened at the Curie temperature due to the small grain size (0.3–0.4 μm). A core-shell structure was developed, which is helpful to flatten the ɛ– T curve of BaTiO₃ ceramics at high temperatures.     

Effect of Glass Composition on the Dielectric Properties of a Liquid-Phase-Sintered MgO-Doped BaTiO3

A series of BaTiO₃–MgO–glass mixtures has been sintered via liquid-phase sintering in a reducing atmosphere at 1280°C by controlling MgO/CaO ratio in an aluminum borosilicate glass composition, and the subsequent microstructure, phase evolution, and dielectric properties have been investigated. The growth of BaTiO₃ grains was inhibited in all of the prepared specimens with the evidence of Mg incorporation to the BaTiO₃ lattice from the glass. The change in MgO/CaO ratio in the glass notably modified the dielectric properties: a high MgO/CaO ratio in the glass resulted in a decreased dielectric constant, a decreased phase transition temperature, a broadened temperature range of phase transition, a decreased temperature coefficient of capacitance, and increased electrical resistivity.