一种高增益全差分运算放大器的分析与设计

采用增益提高技术,设计了一种高增益全差分运算放大器,其主运放和两个辅助运放均为全差分折叠式共源共栅结构,并带有连续时间共模反馈电路。详细地分析了由增益增强结构为此运放带来的零极点对。该运算放大器采用TSMC 0.18 μm CMOS工艺设计,开环直流增益可达138 dB,单位增益带宽为252 MHz。     

一种基于前馈补偿技术的高性能CMOS运算放大器

基于传统CMOS折叠共源共栅运算放大器的分析和总结,应用前馈补偿技术,实现了一种高性能CMOS折叠共源共栅运算放大器,不仅保证了高开环增益,而且还大大减小了运放的输入失调电压。设计采用TSMC 0.35μm混合信号CMOS工艺实现,采用Hspice进行仿真,仿真结果表明运放的直流开环增益为95 dB,输入失调电压为0.023 mV,负载电容为2pF时的相位裕度为45.5°。     

一种全差分增益提升运放的设计与建立特性优化

在2．5V电源电压下采用中芯国际（SMIC）0．25μm混合信号CMOS工艺设计了一个单级全差分运算放大器。所设计的运放采用了增益提升技术,其主运放为一个带有开关电容共模反馈的全差分折叠一共源共栅运放。两个带有连续时间共模反馈的全差分折叠一共源共栅运放作为辅运放用来提升主运放的开环增益。此外,本文还提出了一种可用于增益提升运放高速设计的基于仿真的优化方法。仿真结果表明,所设计运放的直流增益可达102dB,单位增益频率为822MHz,通过高速优化,其达到0．1％精度的建立时间为4ns。     

一种采用增益增强方法的CMOS全差分运算放大器

设计了一种全差分、增益增强CMOS运算放大器。该放大器由三个折叠式共源共栅运算放大器组成，可用于12位40MHz采样频率的流水线A／D转换器。详细分析了折叠式共源共栅运算放大器中由增加增益增强电路产生的零极点对。该放大器在0.35μm CMOS工艺中开环增益为112dB，单位增益带宽为494MHz。     

一种全差分增益增强型运算放大器的设计

设计了一种用于高速ADC中的全差分运算放大器。该运算放大器由主运放、4个辅助运放和一种改进型开关电容共模反馈电路组成,主运放采用折叠式共源共栅结构,并引入增益增强技术提高增益。采用SMIC 0.18μm,1.8 V工艺,在Cadence电路设计平台中利用Spectre仿真,结果表明：运放增益达到115 dB,单位增益带宽805 MHz,而功耗仅为10.5 mW,运放在8 ns的时间内可以达到0.01%的建立精度,可用于高速高精度流水线( Pipelined) ADC中。     

一种带共模反馈电路的套筒式全差分运算放大器

基于Chartered 0.35 μm工艺,设计了一种带共模反馈电路的套筒式全差分运算放大器.该电路主要由套筒式结构的主运放、偏置电路和共模反馈电路组成.仿真结果表明,设计的电路开环增益为79.4 dB,单位增益带宽为179 MHz,相位裕度为75.5°(负载Cload= 3 PF),功耗为2.31 mW.提出了一种全...     

一种采用增益增强技术的全差分运放设计和实现

设计了一种采用增益增强技术并带有共模反馈的全差分运算放大器.该运算放大器主要由三个折叠式共源共栅结构的运放、一个偏置电路和一个共模反馈电路组成.运算放大器采用chartered 0.35 μm CMOS工艺实现,仿真结果表明运放开环增益为106.8 dB,单位增益带宽为58 MHz,相位裕度为79°(负载Cload=1 pF).对流片运放进行测试和分析,运算放大器测试指标和仿真指标基本接近,较好达到预先的设计要求.     

一种高单位增益带宽CMOS全差分运算放大器

设计并讨论了一种高单位增益带宽CMOS全差分运算放大器。由于折叠共源共栅结构电路具有相对高的单位增益带宽以及开关电容共模反馈电路稳定性好、对运放频率特性影响小等优点,故设计的放大器采用了折叠共源共栅结构以及开关电容共模反馈电路技术,并达到了高单位增益带宽的设计目的。基于TSMC0·25μmCMOS工艺,仿真结果表明,在2·5V的单电源电压下,运算放大器的直流开环增益为70dB,单位增益带宽为500MHz。     

一种高速高增益CMOS运算放大器的设计

设计了一种应用于采样保持电路中高速高增益运算放大器。该运放采用全差分增益提高型共源共栅结构。在输入信号通路上加入适当的补偿电容,消除了零极点对对运放建立时间的影响,同时对主运放的次极点进行了优化,改进了相位裕度。采用0.35μmCMOS工艺仿真,结果表明,运放的开环直流增益达到106dB,单位带宽为831MHz（负载电容8pF）,相位裕度为60.5°,压摆率为586V/μs,满足12位50MS/s流水线ADC中采样保持电路性能要求。     

一款高性能共源共栅运算放大器设计

基于CSMC 0.5μm标准CMOS工艺,采用复用型折叠式共源共栅结构,设计一种折叠式共源共栅运算放大器。该电路在5V电源电压下驱动5pF负载电容,采用Cadence公司的模拟仿真工具Spectre对电路进行仿真。结果表明,电路开环增益达到了71.7dB,单位增益带宽为52.79MHz,开环相位裕度为60.45°。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks