Improved Hydrogen Capping Effect in n-Type Crystalline Silicon Solar Cells by SiN(Si-Rich)/SiN(N-Rich) Stacked Passivation

The effect of hydrogen capping of SiN(Si-rich)/SiN(N-rich) stacks for n-type c-Si solar cells was investigated. Use of a passivation layer consisting of Si-rich SiN with a refractive index (n) of 2.7 and N-rich SiN with a refractive index of 2.1 improved the thermal stability. A single SiN passivation layer with a refractive index of 2.05 resulted in an initial lifetime of 200 μs whereas the layer with a refractive index of 2.7 resulted in a high initial lifetime of 2 ms, but the layer degraded rapidly after firing. A stacked passivation layer with refractive indices of 2.1 and 2.7 had a stable lifetime of 1.5 ms with an implied open-circuit voltage (iV _oc) of 720 mV after firing. The thermally stable passivation mechanism with changing amounts of Si–N and Si–H bonding was analyzed by Fourier-transform infrared (FTIR) spectroscopy. Incorporation of the SiN _x stack layer (2.7 + 2.1) into the passivated rear of n-type Cz silicon screen-printed solar cells resulted in energy conversion efficiency of 19.69%. Improved internal quantum efficiency in the long-wavelength range above 900 nm, with V _oc of 630 mV, is mainly because of superior passivation of the rear surface compared with conventional solar cells.     

Characterization of in-situ terahertz detection by optical interaction in a periodically poled stoichiometric lithium tantalate nonlinear crystal

Terahertz waves are generated using a femtosecond laser pulse in a periodically poled stoichiometric lithium tantalate crystal and simultaneously detected via a non-collinear optical parametric interaction inside the same crystal. Real time up-conversion signal between the generated THz and an optic probe pulses is measured depending on the beam overlapped conditions using a general silicon-photodiode for the THz detection. The non-collinear geometry is to facilitate manipulated property of the position-dependent bandwidth at narrow and broad bandwidths of 45 GHz and 3.3 THz, respectively at the one crystal. Furthermore, an aperture effect at the detection part is characterized as the function of size and position owing to the spatial distribution of the frequency conversion signal and it is applied in optimization of the in-situ detection scheme.     

Terahertz polarization beam splitter based on photonic crystal and multimode interference

We design a compact terahertz （THz） polarization beam splitter. Both plane wave expansion method and fi- nite-difference time-domain method are used to calculate and analyze the characteristics of the proposed device. The designed polarization beam splitter can split TE-polarized and TM-polarized THz waves into different propagation di- rections. The simulation results show that the extinction ratios are larger than 18.36 dB for TE polarization and 13.35 dB for TM polarization in the frequency range from 1.86 THz to 1.91 THz, respectively. The designed polarization beam splitter has the advantages of small size and compact structure with a total size of 4.825 mm×0.400 mm.     

Sample Thickness Measurement with THz-TDS: Resolution and Implications

The accuracy of any measurement with terahertz time-domain spectroscopy (THz-TDS) depends strongly on knowing and supplying the precise sample thickness when processing the raw terahertz data. Sample thickness usually is estimated using other (non-THz) metrology and invariably involves some degree of uncertainty. It turns out that the terahertz data itself typically also contains information regarding sample thickness. However, there is limited systematic work addressing the following questions: What is the best method for extracting sample thickness from THz-TDS data? And, what is the thickness resolution obtainable with THz-TDS? In this study we demonstrate how these questions can be answered in general by answering them for a specific example: undoped silicon wafers. We determine the accuracy with which the exact thickness of nominally 500 μm silicon wafers can be measured using transmission mode THz-TDS. We analyze and compare the resolution of 5 different approaches for determining sample thickness using THz-TDS data, including two new methods and three methods proposed in the literature. The quantitative results and analyses of methods we present will be useful in developing far-infrared optical metrology. Conversely the quantitative results presented can be used to relate uncertainty in sample thickness to uncertainty in the measured terahertz data both in the time domain and frequency domain (phase and amplitude). Finally, a precise understanding of the relationship between sample thickness and THz-TDS data can be used to formulate superior THz-TDS data work-up methodologies.     

Terahertz Spectra of L-Ascorbic Acid and Thiamine Hydrochloride Studied by Terahertz Spectroscopy and Density Functional Theory

We have investigated the terahertz spectra of L-ascorbic acid and thiamine hydrochloride measured by terahertz time-domain spectroscopy (THz-TDS) and Fourier transform infrared spectroscopy (FTIR). The measured absorption spectra were demonstrated to be in good agreement with the results simulated by Density Functional Theory (DFT) using hybrid functional B3LYP with basis set of 6-31G (d), except with slight frequency shift and few peaks missing. We presented the comparison of measured spectra by the FTIR spectroscopy employing low temperature silicon bolometer as detector and the TDS system. The measured spectra of the L-ascorbic acid showed shoulder bands at 0.25, 1.1, 1.5, 1.82, 2.03, 2.30, 2.44, 2.67, 2.97, 3.12, and 3.40 THz, respectively. The spectra of the thiamine hydrochloride show shoulder bands at 0.48, 1.11, 1.57, 1.75, 1.92, 2.08, 2.31, 2.53, 2.69, 2.85, 3.12, 3.22, and 3.31 THz. Most absorption peaks of the two samples agree with the results simulated by Density Function Theory (DFT) method of Gaussian 09 software. In our work, more spectral peaks based on experimental and theoretical results were found in comparison to that of other groups, since we employed higher sensitive FTIR measurement system and considered the effect of number of molecule unit in simulation. The study suggests that the effect of intermolecular vibration is stronger than intramolecular interaction on the absorption bands in THz region.     

Robust MMSE Design With Asynchronous Interference Mitigation in Cooperative Base Station Systems

This paper investigates minimum mean square error (MMSE) with asynchronous interference mitigation in cooperative base station systems. We consider the asynchronous transmission because of the different propagation times between the base station (BS) and mobile stations (BSs). Meanwhile, the channel quantization errors duo to channel quantization is taken into account in our analysis. The proposed scheme is robust to asynchronous interference and channel quantization errors in BSs cooperation systems. Simulations results show that proposed MMSE scheme achieve an improved performance compared with the conventional MMSE in BSs cooperative systems.     

Check out the Rules: Towards Time-Efficient Rule Checking over RFID Tags

With the rapid proliferation of RFID technologies, RFID has been introduced to the applications like safety inspection and warehouse management. Conventionally a number of deployment rules are specified for these applications. This paper studies a practically important problem of rule checking over RFID tags, i.e., checking whether the specified rules are satisfied according to the RFID tags within the monitoring area. This rule checking function may need to be executed frequently over a large number of tags and therefore should be made efficient in terms of execution time. Aiming to achieve time efficiency, we respectively propose two protocols, CRCP and ECRCP. CRCP works based on collision detection, while ECRCP combines the collision detection and the logical features of the rules. Simulation results indicate that our protocols achieve much better performance than other solutions in terms of time efficiency.     

Sixtieth order harmonic mixing to 4.25 THz using a Schottky diode

Harmonic mixing of mm-waves with radiation of 3.7 THz with different Schottky diodes is reported. The highest mixing order is 60 producing a beat between 72 GHz and 4.25 THz radiation. Such high frequency mixing has so far only been possible using cryogenic Josephson mixers. The present result permits substantial simplification of measurements of optical frequencies.     

Terahertz gyrotrons: State of the art and prospects

The state of the art for terahertz gyrotrons that are needed for various scientific research and practical applications is presented. Powers of 5 kW and 200 kW are obtained at frequencies of 1 and 0.7 THz using pulsed gyrotrons with pulse durations of tens of microseconds. A power of 100 W is demonstrated for cw gyrotrons at frequencies ranging from 0.2 to 0.5 THz.     

A practical RFID authentication mechanism for digital television

As information technology continuously progresses, more applied technologies are developed, such as radio frequency identification (RFID). In this paper, we propose a novel digital television (DTV) structure that uses RFID for encryption. RFID is widely used for various applications because of its advantages such as an extended lifetime and security, and it is less affected by environmental constraints. The proposed protocol uses RFID for encryption to withstand many attacks that the traditional system is vulnerable to, such as impersonation attack, replay attack and smart card cloning. Compared with other protocols, the proposed protocol is more secure and efficient. Thus, our proposed protocol makes the DTV framework more complete and secure.     

Simultaneous prediction of density and moisture content of wood by terahertz time domain spectroscopy

In this study, demonstration of simultaneous prediction of solid wood density and moisture content, both of which are critical in manufacturing operations, of 4 species (Aspen, Birch, Hemlock and Maple) was accomplished using terahertz time-domain spectroscopy (THz-TDS). THz measurements of wood at various moisture contents were taken for two orientations of the THz field (parallel and perpendicular) with respect to the visible grain. The real and imaginary parts of the dielectric function averaged over the frequency range of 0.1 to 0.2 THz had strong correlation with density and moisture content of the wood. We extend a model that has been applied previously to oven-dry wood to include the effects of moisture below the fiber saturation point by combining two effective medium models, which allows the dielectric function of water, air and oven-dry cell wall material to be modeled to give an effective dielectric function for the wood. A strong correlation between measured and predicted values for density and moisture content were observed.     

A model for the complex permittivity of water at frequencies below 1 THz

Experimental permittivity data of liquid water, compiled from the open literature, were selectively applied to support a modeling strategy. Frequencies up to 1 THz and atmospheric temperatures are covered with an expression made up by two relaxation (Debye) terms. The double-Debye model reduces to one term when the high frequency limit is set at 100 GHz, and the model can be extended to 30 THz by adding two resonance (Lorentzian) terms. The scheme was carried out by employing nonlinear least-squares fitting routines to data we considered reliable.     

Design and fabrication of 0.5 micron GaAs Schottky barrier diodes for low-noise terahertz receiver applications

Recent technological advances have made possible the development of heterodyne receivers with high sensitivity and high spectral resolution for frequencies in the range 1,000–3,000 GHz (1–3 THz). These receivers rely on GaAs Schottky barrier mixer diodes to translate the high-frequency signal to a lower frequency where amplification and signal processing are possible. At these frequencies, the diode quality is a major limitation to the performance of the receiver. The design, fabrication and DC evaluation of a diode for this frequency range is presented. A figure-of-merit cut-off frequency of over 10 THz is achieved with a record low zero biased capacitance of 0.5 fF. Results from RF tests are also given.     

Algorithms for bounding end-to-end delays in Wireless Sensor Networks

Wireless Sensor Networks (WSNs) have many characteristics that are attractive to a myriad of applications. In particular, nodes employ multi-hop communications to collaboratively forward sensed data back to one or more sinks. In this context, reducing the end-to-end delay between the sink and sensor/source nodes is of interest to many applications. In particular, those that require a fixed, upper bound on end-to-end delays. To this end, we focus on bounding the end-to-end delay from the sink to each source. We first formulate the problem as a Binary Integer Program (BIP). As the problem is NP-hard, this paper proposes and studies two centralized, heuristic algorithms: Tabu and Domino. The key approach used by both algorithms is to determine the minimal number of extra wake-up slots required by a given network in order to ensure the delay of all end-to-end paths is within a given bound. We conducted two sets of experiments. The first set compares BIP, Tabu, and Domino in WSNs with up to 80 nodes. These experiments serve to compare the proposed algorithms against BIP, which become computationally expensive in large scale WSNs. The results show that, compared to BIP, the number of additional wake-up times generated by Tabu and Domino are within 5 and 10 % of the optimal solution. In the second set of experiments, which evaluates the algorithms in WSNs with 100–500 nodes, the average number of extra wake-up slots activated by Domino is 13 % greater than Tabu. These algorithms have a time complexity of \({\mathcal {O}} (\alpha n^2 T + n^3)\) and \({\mathcal {O}}(n^3)\) respectively, where \(n\) is the number of nodes, \(T\) is the number of slots in one period, and \(\alpha\) is the maximum number of iterations carried out by the Tabu algorithm.     

Structural Characterization and Thermoelectric Properties of Hot-Pressed CoSi Nanocomposites

Fabrication of nanocomposites by introduction of SiO₂ metal oxide nanoparticles into a cobalt silicide thermoelectric matrix is studied. The CoSi matrix material was prepared through solid-state synthesis, and the nano-SiO₂ metal oxide was introduced by mechanical grinding. The mixed powders were hot pressed to fabricate nanocomposites. The structural and morphological modifications were studied by powder x-ray diffraction analysis and scanning electron microscopy. The thermoelectric properties of the materials were followed through the Hall effect, Seebeck coefficient, and electrical and thermal conductivities in the temperature range from 300 K to 1000 K.     

On the kinetics of electron processes in 60Co γ-irradiated n-Ge single crystals

Variations in the main electrical parameters of n-Ge single crystals with different doping levels under the effect of 60Co γ-irradiation are investigated. A noticeable increase in the carrier mobility in the irradiated samples is observed in some dopant concentration range and the nature of this effect is explained. It is demonstrated that the electron-mobility variation under the action of γ-irradiation in the initial n-Ge crystals with an oxygen impurity and in the annealed crystals have opposite signs. It is established that the oxygen complexes formed in the samples during annealing and the local lattice stresses near these complexes play a key role in the radiation-induced mobility increase. It is clarified that the radiation resistance of the electron mobility significantly depends on the crystallographic orientation of the investigated samples.     

Ohmic contacts to InP-based materials induced by means of rapid thermal low pressure (metallorganic) chemical vapor deposition technique

A rapid-thermal-low-pressure-metallorganic-chemical-vapor-deposition (RT-LPMOCVD) technique was executed in order to deposit non-semiconductor thin layer materials, necessary for producing metal contact to InP-based microelectronic devices. Silicon dioxide (SiO₂) films were deposited onto InP substrates in rapid thermal cycles, using O₂ and 2% diluted SiH₄ in Ar, with very fast growth kinetics and low activation energy. The SiO₂ film exhibited excellent properties, such as refractivity index, density, internal stress, and wetp-etch rates. The SiO₂ films were dry etched in a given pattern to allow for the formation of a small metal contact to the InP-based material, onto which the SiO₂ layer was deposited. Subsequently, titanium-nitride (TiN _x ) thin films were deposited onto the InP substrate through rapid thermal deposition cycles, using a tetrakis (dimethylamido) titanium (DMATi) metallorganic liquid source as the precursor for the process, with fast kinetics. The deposited TiN _x films had a stoichiometric structure and contained nitrogen and titanium in a ratio close to unity, but incorporated a large amount of carbon and oxygen. The film properties, such as resistivity (40–80 μΩ·mm) and stress (compressive; ?0.5 to ?2.0×10⁹ dyne·cm^?2), were studied in addition to an intensive investigation of its microstructure and morphology, and their performance as an ohmic contacts while deposited ontop?In_0.53Ga_0.47As material (Zn doped 1.2×10¹⁸ cm^?3).     

Investigation of GaAs Schottky barrier diodes in the THz range

The properties of GaAs Schottky barrier diodes as video detectors and mixing elements were investigated in the frequency range from 0.8–2.5 THz. For the most sensitive diode, the video responsivity and system noise temperature were measured as a function of incident laser power. The highest video responsivity was 2,000 V/W at 214μm and 60 V/W at 118μm. For five diodes differing in doping, capacitance, series resistance and anode diameter, the system noise temperature was measured at 214μm and 118μm. The best single sideband (SSB) values are 12,300 K and 24,200 K at 214μm and 118μm, respectively. The system noise temperature versus frequency is given over the range from 0.5–3 THz for two specific diodes demonstrating that the sharpness of the I–V characteristics is only of secondary importance for mixer perfomance at such high frequencies.