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1.

Light-emitting diodes of “Warm” white luminescence on the basis of p-n heterostructures of the InGaN/AlGaN/GaN type coated with phosphors made of yttrium-gadolinium garnets

Soshchin N. P. Galchina N. A. Kogan L. M. Shirokov S. S. Yunovich A. E. 《Semiconductors》2009,43(5):672-676

Semiconductors - Electroluminescence spectra and color characteristics of light-emitting diodes of white luminescence based on p-n heterostructures of the InGaN/AlGaN/GaN type with blue emission... 相似文献

2.

“Extremum Loop” Model for the Valence-Band Spectrum of a HgTe/HgCdTe Quantum Well with an Inverted Band Structure in the Semimetallic Phase

S. V. Gudina A. S. Bogolyubskii V. N. Neverov N. G. Shelushinina M. V. Yakunin 《Semiconductors》2018,52(11):1403-1406

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3.

Corrigendum to “A 12-bit 100 MS/s pipelined ADC without using front-end SHA” International Journal of Electronics and Communications (AEÜ) 86 (2018) 142-153

《AEUE-International Journal of Electronics and Communications》2018

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4.

A review of “ Microcircuit Engineering” 83, Proceedings of the Microcircuit Engineering '83 Conference held in Cambridge,England, on 25-29 September 1983, Edited by Ahmed,H., Cleaver,J. R. A., and Jones,G- A. C,Academic Press,London, 1983, 533 pp $ 29-50/ £ 18-00 ( hardback)

《International Journal of Electronics》2013,100(5)

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